Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
01/2004
01/15/2004WO2004006285A1 Method and apparatus for non-invasive measurement and analysis of plasma parameters
01/15/2004WO2004005576A1 Plant for vacuum coating of objects treated in batches
01/15/2004WO2004005186A1 sp3 BOND BORON NITRIDE EMITTING LIGHT IN ULTRAVIOLET REGION, ITS PRODUCING METHOD, AND FUNCTIONAL MATERIAL USING SAME
01/15/2004WO2003065766A3 Heating in a vacuum atmosphere in the presence of a plasma
01/15/2004WO2003062507A3 Method for manufacturing a free-standing substrate made of monocrystalline semi-conductor material
01/15/2004WO2002092728A3 Coal tar and hydrocarbon mixture pitch and the preparation and use thereof
01/15/2004US20040010158 One pot method to produce an organometallic compound, e.g., a cyclopentadienytrimethylplatinum, from a metal source, an alkylating agent and a hydrocarbon or hetero compound; chemical vapor deposition to form electrical thin film
01/15/2004US20040009679 Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same
01/15/2004US20040009678 Method for manufacturing semiconductor device
01/15/2004US20040009676 Nitrogen-free dielectric anti-reflective coating and hardmask
01/15/2004US20040009665 Deposition of copper films
01/15/2004US20040009336 Titanium silicon nitride (TISIN) barrier layer for copper diffusion
01/15/2004US20040009308 Method of producing a branched carbon nanotube for use with an atomic force microscope
01/15/2004US20040009307 Vapor depositing a metal oxide layer on a substrate, by oxidation with a generated plasma of metal compounds and oxygen; plasma enhanced chemical vapor deposition
01/15/2004US20040009306 Plasma enhanced chemical deposition for high and/or low index of refraction polymers
01/15/2004US20040008336 Method and system of determining chamber seasoning condition by optical emission
01/15/2004US20040007581 Removable lid and floating pivot
01/15/2004US20040007560 Method for predicting consumption of consumable part, method for predicting deposited-film thickness, and plasma processor
01/15/2004US20040007248 Preparing an etching and a deposition apparatus each using chlorine series gas, generating a plasma containing hydrogen and nitrogen to remove by-products
01/15/2004US20040007247 Plasma film-forming apparatus and cleaning method for the same
01/15/2004US20040007187 CVD reactor with substrate holder which is rotatably driven and mounted by a gas stream
01/15/2004US20040007185 Method of manufacturing a semiconductor device and a semiconductor manufacture system
01/15/2004US20040007182 Plasma processing apparatus
01/15/2004US20040007181 Deposited-film formation process and formation system
01/15/2004US20040007180 Film-formation apparatus and source supplying apparatus therefor, gas concentration measuring method
01/15/2004US20040007179 Reaction apparatus for atomic layer deposition
01/15/2004US20040007178 Low pressure vapor phase deposition of organic thin films
01/15/2004US20040007176 Gas flow control in a wafer processing system having multiple chambers for performing same process
01/15/2004US20040007171 Method for growing thin oxide films
01/15/2004DE10230395A1 Leitfähiges Bauteil für elektrochemische Zellen sowie Verfahren zur Herstellung eines solchen Bauteils Conductive component for electrochemical cells and methods for producing such a component
01/15/2004DE10228050A1 Dikupfer(I)oxolat-Komplexe als Precursor-Substanzen zur metallischen Kupferabscheidung Dicopper (I) oxolat complexes as precursor substances for metallic copper deposition
01/15/2004DE10227637A1 Verfahren und Vorrichtung zur Plasmabehandlung von Werkstücken Method and apparatus for plasma treatment of workpieces
01/14/2004EP1381079A1 Heat treating method and heat treating device
01/14/2004EP1381078A1 Ultraviolet ray assisted processing device for semiconductor processing
01/14/2004EP1380050A2 Method for producing a chalcogenide-semiconductor layer of the abc2 type with optical process monitoring
01/14/2004EP1379476A1 Chemical vapor deposition of antimony-doped metal oxide
01/14/2004EP1222196B1 Deposition of films using organosilsesquioxane-precursors
01/14/2004EP1141443B1 A method of metallizing the surface of a solid polymer substrate and the product obtained
01/14/2004CN1468444A 真空处理装置 Vacuum processing apparatus
01/14/2004CN1468440A System, apparatus, and method for processing wafer using single frequency rf power in plasma processing chamber
01/14/2004CN1468322A Electrostatically clamped edge ring for plasma processing
01/14/2004CN1468154A Method and apparatus for forming a coating
01/14/2004CN1467802A Laser anneal equipment and laser film forming method
01/14/2004CN1467311A Method of manufacturing inorganic nanotube
01/14/2004CN1467303A Method for depositing film using plasma chemical gas phase deposition method
01/14/2004CN1467302A Layer formation method, and substrate with a layer formed by the method
01/14/2004CN1134525C Method for making long-life electroluminescent matter
01/13/2004US6677711 Plasma processor method and apparatus
01/13/2004US6677253 Carbon doped oxide deposition
01/13/2004US6677250 CVD apparatuses and methods of forming a layer over a semiconductor substrate
01/13/2004US6677214 Semiconductor device and method of fabricating the same
01/13/2004US6677167 Wafer processing apparatus and a wafer stage and a wafer processing method
01/13/2004US6677001 Electron cyclotron resonance chemical vapor deposition (ecr cvd) has attracted the interests of researchers as a new method of manufacturing thin films, particularly amorphous thin films
01/13/2004US6676916 Method for inducing controlled cleavage of polycrystalline silicon rod
01/13/2004US6676804 Method and apparatus for plasma processing
01/13/2004US6676803 Semiconductor device fabricating equipment using radio frequency energy
01/13/2004US6676802 Remote exposure of workpieces using a plasma
01/13/2004US6676764 Method for cleaning a substrate in selective epitaxial growth process
01/13/2004US6676760 Process chamber having multiple gas distributors and method
01/13/2004US6676758 Gas collector for epitaxial reactor
01/13/2004US6676756 Technique for high efficiency metalorganic chemical vapor deposition
01/13/2004US6676751 Epitaxial film produced by sequential hydride vapor phase epitaxy
01/13/2004US6676704 Prosthetic joint component having at least one sintered polycrystalline diamond compact articulation surface and substrate surface topographical features in said polycrystalline diamond compact
01/13/2004US6676487 Polishing liquid of silicon dioxide powder; x-ray mask deposited on a semiconductor surface
01/13/2004US6675816 Parallel flat plate
01/13/2004US6675737 Plasma processing apparatus
01/08/2004WO2004003995A1 Substrate treating apparatus and method for manufacturing semiconductor device
01/08/2004WO2004003983A1 Cvd apparatus having means for cleaning with fluorine gas and method of cleaning cvd apparatus with fluorine gas
01/08/2004WO2004003963A2 Plasma processor with electrode simultaneously responsive to plural frequencies
01/08/2004WO2004003962A2 Thermal sprayed yttria-containing coating for plasma reactor
01/08/2004WO2004003410A1 Sealable surface method and device
01/08/2004WO2004003266A1 POROUS SUBSTRATE AND ITS MANUFACTURING METHOD, AND GaN SEMICONDUCTOR MULTILAYER SUBSTRATE AND ITS MANUFACTURING METHOD
01/08/2004WO2004002946A1 Novel alkaline earth metal complexes and use thereof
01/08/2004WO2002056342A3 Copper vias in low-k technology
01/08/2004WO2002048423A3 Method for coating substrates and mask holder
01/08/2004US20040005789 Method for fabricating semiconductor device
01/08/2004US20040005731 Device and method for the depostion of, in particular, crystalline layers on, in particular, crystalline substrates
01/08/2004US20040005502 In particular for use as a bipolar plate in a fuel cell. The conductive component consists of a metal part provided with a doped diamond coating and/or with a doped diamond-like carbon coating. This coating enables the component to be produced at
01/08/2004US20040005414 Producing fine or ultra fine powder particles comprising mixing a metal alkoxide with a non-metallic hydride in an organic solvent, agitating the mixed solution, and then burning the mixed solution. The burning process comprises
01/08/2004US20040005410 Process for internally coating gas turbine blades or vanes and internally coated gas turbine blade or vane produced thereby
01/08/2004US20040005408 Method of forming a dielectric film
01/08/2004US20040005258 Having intersecting channel-like voids parallel to the major axis of said template; used to produce micro- and nano-scale filaments and particles, e.g., polymerizing acetylene and decomposing polyacetylene to form carbon nanotubes
01/08/2004US20040005147 Heat treatment apparatus, calibration method for temperature measuring system of the apparatus, and heat treatment system
01/08/2004US20040004870 Method for manufacturing semiconductor device
01/08/2004US20040003897 Plasma stabilization method and plasma apparatus
01/08/2004US20040003896 Controller for plasma processing apparatus performing good etching process
01/08/2004US20040003828 Selective cleaning, drying, and modifying substrate surfaces and depositing thin films thereon using a dense phase gas solvent and admixtures within a first created supercritical fluid antisolvent.
01/08/2004US20040003780 Self aligning non contact shadow ring process kit
01/08/2004US20040003779 Device for depositing in particular crystalline layers on one or more, in particular likewise crystalline substrates
01/08/2004US20040003777 Apparatus and method for depositing materials onto microelectronic workpieces
01/08/2004DE10212923A1 Verfahren zum Beschichten eines Substrates und Vorrichtung zur Durchführung des Verfahrens A method for coating a substrate and apparatus for carrying out the method
01/07/2004EP1377999A1 Inductively coupled plasma source with controllable power distribution
01/07/2004EP1326718B1 Method and apparatus for forming a coating
01/07/2004EP1115900B1 Methods for preparing ruthenium metal films
01/07/2004CN1466670A System and method for controlling movement of a workpiece in a thermal processing system
01/07/2004CN1465741A Liquid material gasifying and supply device
01/07/2004CN1465740A Method for preparing vacuum film-coating zinc sulfide
01/06/2004US6674169 Semiconductor device with titanium silicon oxide layer
01/06/2004US6673725 Film forming by plasma enhanced vapor deposition using gas of nitrous oxide, water, carbon dioxide, ammonia, an alkylsiloxane and a methylsilane; coating a copper wiring
01/06/2004US6673718 Methods for forming aluminum metal wirings