| Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892) |
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| 01/27/2004 | US6683011 Process for forming hafnium oxide films |
| 01/27/2004 | US6683006 Film forming method and film forming apparatus |
| 01/27/2004 | US6682974 Fabricating capacitor of semiconductor device |
| 01/27/2004 | US6682971 Method of manufacturing a semiconductor |
| 01/27/2004 | US6682807 Depositing a first carbon layer on disk, first carbon layer comprising predominantly sp3 carbon; and depositing second carbon layer on disk, second carbon layer |
| 01/27/2004 | US6682630 Uniform gas distribution in large area plasma source |
| 01/27/2004 | US6682603 Substrate support with extended radio frequency electrode upper surface |
| 01/27/2004 | US6682602 Chemical vapor deposition systems including metal complexes with chelating O- and/or N-donor ligands |
| 01/27/2004 | US6682039 Locator for a material sheet |
| 01/27/2004 | US6681716 Apparatus and method for depositing large area coatings on non-planar surfaces |
| 01/22/2004 | WO2004008518A1 Film forming method and film forming apparatus |
| 01/22/2004 | WO2004008517A1 Organic siloxane copolymer film, method and deposition apparatus for producing same, and semiconductor device using such copolymer film |
| 01/22/2004 | WO2004008516A1 Method of forming film and film forming apparatus |
| 01/22/2004 | WO2004008513A1 Method for manufacturing semiconductor device and substrate processing apparatus |
| 01/22/2004 | WO2004008510A1 Surface treating method for substrate |
| 01/22/2004 | WO2004008506A1 Large-diameter sic wafer and manufacturing method thereof |
| 01/22/2004 | WO2004008494A2 Servomotor control system and method in a semiconductor manufacturing environment |
| 01/22/2004 | WO2004008493A2 Method and apparatus for supporting semiconductor wafers |
| 01/22/2004 | WO2004008491A2 Thermal processing system and configurable vertical chamber |
| 01/22/2004 | WO2004008054A1 Variable heater element for low to high temperature ranges |
| 01/22/2004 | WO2004008052A2 System and method for cooling a thermal processing apparatus |
| 01/22/2004 | WO2004008008A2 Control of a gaseous environment in a wafer loading chamber |
| 01/22/2004 | WO2004007800A1 Thermal processing apparatus and method for evacuating a process chamber |
| 01/22/2004 | WO2004007797A1 Film forming apparatus |
| 01/22/2004 | WO2004007796A1 Vapor deposition of tungsten nitride |
| 01/22/2004 | WO2004007795A1 Film formation method for semiconductor processing |
| 01/22/2004 | WO2004007794A2 Pulsed nucleation deposition of tungsten layers |
| 01/22/2004 | WO2004007793A2 Method and apparatus for providing gas to a processing chamber |
| 01/22/2004 | WO2004007792A2 Method of film deposition using activated precursor gases |
| 01/22/2004 | WO2004007353A2 Continuous chemical vapor deposition process and process furnace |
| 01/22/2004 | WO2004007318A2 Loadport apparatus and method for use thereof |
| 01/22/2004 | WO2004007105A1 Apparatus and method for backfilling a semiconductor wafer process chamber |
| 01/22/2004 | WO2004006977A2 Coatings |
| 01/22/2004 | WO2003089681A3 Mixed frequency high temperature nitride cvd process |
| 01/22/2004 | US20040015331 Remote monitoring system for chemical liquid delivery |
| 01/22/2004 | US20040015300 Method and apparatus for monitoring solid precursor delivery |
| 01/22/2004 | US20040014327 Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials |
| 01/22/2004 | US20040014320 Method and apparatus of generating PDMAT precursor |
| 01/22/2004 | US20040014315 Formation of composite tungsten films |
| 01/22/2004 | US20040014306 Ms type transistor and its manufacturing method |
| 01/22/2004 | US20040014295 Atomic layer deposition of titanium nitride using batch type chamber and method for fabricating capacitor by using the same |
| 01/22/2004 | US20040014077 Delivering a first component of a first material and a first component of a second material to first and second region on a substrate, delivering a second component of second material to first and second region, simultaneously reacting component |
| 01/22/2004 | US20040013818 Nitriding with plasma gas hydrogen and nitrogen, removing nitrides film residues with chlorine gas in situ |
| 01/22/2004 | US20040013803 Nitriding titanium tetrachloride which is adsorbed on the substrate with ammonia gas, forming electrodes for a three-dimensional capacitor; chemical vapor deposition |
| 01/22/2004 | US20040013802 Metal-organic chemical vapor deposition (MOCVD); for use with aircraft |
| 01/22/2004 | US20040013801 Method for depositing in particular crystalline layers, and device for carrying out the method |
| 01/22/2004 | US20040013800 Device and method for feeding a liquid starting material, which has been brought into the gaseous state, into a CVD reactor |
| 01/22/2004 | US20040013799 Apparatus and method for manufacturing thin film electrode of hydrous ruthenium oxide |
| 01/22/2004 | US20040013577 Method and apparatus for providing gas to a processing chamber |
| 01/22/2004 | US20040013419 Thermal processing system |
| 01/22/2004 | US20040012024 Opaque low resistivity silicon carbide |
| 01/22/2004 | US20040011643 Electrode |
| 01/22/2004 | US20040011467 Materials and gas chemistries for processing systems |
| 01/22/2004 | US20040011466 Plasma processing apparatus |
| 01/22/2004 | US20040011465 Plasma Processing apparatus |
| 01/22/2004 | US20040011385 Glass-coating reactor cleaning with a reactive gas |
| 01/22/2004 | US20040011380 Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials |
| 01/22/2004 | US20040011379 Silicon oxyfluoride film is formed on a wafer using a plasma vapor deposition method; film remaining inside chamber is cleaned up using a gas containing nitrogen trifluoride |
| 01/22/2004 | US20040011292 Single-wafer-processing type CVD apparatus |
| 01/22/2004 | US20040011291 Electron cyclotron resonance plasma deposition process and device for single-wall carbon nanotubes and nanotubes thus obtained |
| 01/22/2004 | US20040011290 Apparatus and process for forming deposited film |
| 01/22/2004 | US20040011289 Laser CVD device and laser CVD method |
| 01/22/2004 | US20040011287 Electrode-built-in susceptor |
| 01/22/2004 | US20040011286 Batch type atomic layer deposition apparatus and in-situ cleaning method thereof |
| 01/22/2004 | US20040011281 Semiconductor manufacturing method |
| 01/22/2004 | CA2492597A1 Continuous chemical vapor deposition process and process furnace |
| 01/21/2004 | EP1383163A2 Methods for forming silicon dioxide layers on substrates using atomic layer deposition |
| 01/21/2004 | EP1383160A1 Gaseous phase growing device |
| 01/21/2004 | EP1382723A2 Method of organic film deposition |
| 01/21/2004 | EP1382716A2 Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials |
| 01/21/2004 | EP1382715A1 Protection of a gas turbine component by a vapor-deposited oxide coating |
| 01/21/2004 | EP1382712A1 Plant for vacuum coating of objects in batches |
| 01/21/2004 | EP1381710A2 Process and device for the deposition of an at least partially crystalline silicium layer on a substrate |
| 01/21/2004 | EP1381709A1 Use of fluorinated ketones as wet cleaning agents for vapor reactors |
| 01/21/2004 | EP1381707A1 Method for producing a coating on a machining tool and a machining tool |
| 01/21/2004 | EP0692138B1 Reactive dc sputtering system |
| 01/21/2004 | CN2600455Y Vertical heat treatment device |
| 01/21/2004 | CN1469848A Pre-polysilicon coating of glass substrates |
| 01/21/2004 | CN1468975A Atomic layer sedimentation reaction equipment |
| 01/21/2004 | CN1468974A Prepn of III-family nitride material |
| 01/21/2004 | CN1468973A Manufacture of cutting tool with coated diamond film |
| 01/21/2004 | CN1468892A Dielectric coated pole, plasma discharge processing apparatus and thin-film forming method |
| 01/21/2004 | CN1135910C Method and apparatus for trigger-igniting CVD plasma |
| 01/21/2004 | CN1135635C Plasma deposition technology for enhancing optical and electric characteristic of electrooptical devices and electronic devices |
| 01/20/2004 | US6680420 It uses radio frequency to excite the constituents of particle exhausted into plasma state such that the constituent reacts to form gaseous products that may be pumped through the vacuum line |
| 01/20/2004 | US6680397 Organoindium compounds |
| 01/20/2004 | US6680262 Method of making a semiconductor device by converting a hydrophobic surface of a dielectric layer to a hydrophilic surface |
| 01/20/2004 | US6680251 Depositing seeding layer of ruthenium oxide at a chemical vapor deposition (cvd) flow rate ratio of a ruthenium source to oxygen gas, then increasing the cvd flow rate of the precursors to deposit ruthenium |
| 01/20/2004 | US6680228 Capacitor in semiconductor device |
| 01/20/2004 | US6680130 Group 3 metal oxide and group 5 element |
| 01/20/2004 | US6680129 .7-1.2% carbon and 4-12% chromium; applying a group 5 metal with an atomic number of < 41 to the surface by agitating with a halide catalyst at 1600-2000 degrees f |
| 01/20/2004 | US6679947 Semiconductor substrate |
| 01/15/2004 | WO2004006321A1 Method and apparatus for forming nitrided silicon film |
| 01/15/2004 | WO2004006320A1 Plasma processing apparatus |
| 01/15/2004 | WO2004006319A1 Plasma processing equipment |
| 01/15/2004 | WO2004006317A1 Method of cleaning substrate treatment apparatus |
| 01/15/2004 | WO2004006316A1 Method of cleaning substrate-processing device and substrate-processing device |
| 01/15/2004 | WO2004006313A1 Apparatus for forming film |
| 01/15/2004 | WO2004006312A1 Group iii nitride semiconductor substrate and its manufacturing method |
| 01/15/2004 | WO2004006293A2 Method of annealing electrically conductive zinc oxide films |