| Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892) |
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| 03/04/2004 | US20040043630 Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides |
| 03/04/2004 | US20040043626 Method of forming a film on a semiconductor substrate |
| 03/04/2004 | US20040043625 Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands |
| 03/04/2004 | US20040043604 Systems and methods for forming refractory metal nitride layers using disilazanes |
| 03/04/2004 | US20040043600 Systems and methods for forming refractory metal nitride layers using organic amines |
| 03/04/2004 | US20040043583 Method of forming nanocrystals in a memory device |
| 03/04/2004 | US20040043569 Atomic layer deposited HfSiON dielectric films |
| 03/04/2004 | US20040043557 Methods for making a dielectric stack in an integrated circuit |
| 03/04/2004 | US20040043555 Carbon doped oxide deposition |
| 03/04/2004 | US20040043544 Manufacturing method of semiconductor device and substrate processing apparatus |
| 03/04/2004 | US20040043541 Atomic layer deposited lanthanide doped TiOx dielectric films |
| 03/04/2004 | US20040043245 Method to control silver concentration in a resistance variable memory element |
| 03/04/2004 | US20040043218 Low-temperature plasma deposited hydrogenated amorphous germanium carbon abrasion-resistant coatings |
| 03/04/2004 | US20040043151 Vapor deposition; diffusion barrier |
| 03/04/2004 | US20040043149 Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide |
| 03/04/2004 | US20040043148 Vapor deposition; connecting tubes with metal strips |
| 03/04/2004 | US20040041286 Method and apparatus for supplying a source gas |
| 03/04/2004 | US20040041194 Metal plating using seed film |
| 03/04/2004 | US20040040933 Wafer processing apparatus and a wafer stage and a wafer processing method |
| 03/04/2004 | US20040040661 Load port capable of coping with different types of cassette containing substrates to be processed |
| 03/04/2004 | US20040040508 Segmented cold plate for rapid thermal processing (RTP) tool for conduction cooling |
| 03/04/2004 | US20040040507 Plasma processing apparatus |
| 03/04/2004 | US20040040506 High throughput deposition apparatus |
| 03/04/2004 | US20040040505 Delivery of liquid precursors to semiconductor processing reactors |
| 03/04/2004 | US20040040503 Micromachines for delivering precursors and gases for film deposition |
| 03/04/2004 | US20040040502 Micromachines for delivering precursors and gases for film deposition |
| 03/04/2004 | US20040040501 Systems and methods for forming zirconium and/or hafnium-containing layers |
| 03/04/2004 | US20040040496 Excimer uv photo reactor |
| 03/04/2004 | US20040040494 Systems and methods for forming strontium- and/or barium-containing layers |
| 03/04/2004 | DE19839996B4 Verfahren und Vorrichtung zum Reduzieren der Reibung an polymeren Oberflächen sowie entsprechend modifiziertes Schlauchmaterial Method and apparatus for reducing the friction of polymeric surfaces and appropriately modified tubing |
| 03/04/2004 | DE19717825B4 Verfahren zur Aluminiumnitrid-Beschichtung der Zylinderlauffläche eines Kurbelgehäuses aus einer Al-Basislegierung und entsprechendes Kurbelgehäuse A process for the aluminum nitride coating on the cylinder surface of a crank case of an Al-base alloy and crankcase corresponding |
| 03/03/2004 | EP1394844A1 Method of fabricating semiconductor device |
| 03/03/2004 | EP1394842A1 Thin film forming apparatus cleaning method |
| 03/03/2004 | EP1394290A2 Process for the production of precision tubes |
| 03/03/2004 | EP1394287A2 Glass coating reactor cleaning with a reactive gas |
| 03/03/2004 | EP1394286A1 Pretreatment of an organic layer for ALD thereof |
| 03/03/2004 | EP1394285A1 Substrate with functional layer |
| 03/03/2004 | EP1394283A1 Process and apparatus for coating of large area of substrates under atmospheric pressure |
| 03/03/2004 | EP1394164A1 Precursor containing a nitrogen compound bound to HfCl4 for hafnium oxide layer and method for forming hafnium oxide film using the precursor |
| 03/03/2004 | EP1393361A2 Low temperature load and bake |
| 03/03/2004 | EP1393359A1 Rector having a movable shuter |
| 03/03/2004 | EP1393358A1 Doped silicon deposition process in resistively heated single wafer chamber |
| 03/03/2004 | EP1393354A1 Method and device for the thermal treatment of substrates |
| 03/03/2004 | EP1393350A2 Assembly comprising heat distributing plate and edge support |
| 03/03/2004 | EP1392885A1 Gas port sealing for cvd/cvi furnace hearth plates |
| 03/03/2004 | EP1392478A2 Ultrasonic cutting tool coated by diamond cvd |
| 03/03/2004 | EP1392462A2 SOURCE REAGENT COMPOSITION FOR CVD FORMATION OF Zr/Hf DOPED GATE DIELECTRIC AND HIGH DIELECTRIC CONSTANT METAL OXIDE THIN FILMS AND METHOD OF USING SAME |
| 03/03/2004 | EP1166324B1 Apparatus for improving plasma distribution and performance in an inductively coupled plasma |
| 03/03/2004 | EP0909343B1 Method for refurbishing brakes |
| 03/03/2004 | CN1479805A Thin film forming method and film forming device |
| 03/03/2004 | CN1479804A Ultralow dielectric constant material as intralevel or interlevel dielectric in semiconductor device, method for fabricating the same, and electronic device containing the same |
| 03/03/2004 | CN1479801A Method for regenerating container for plasma treatement, member inside container for plasma treatment, method for preparing member inside container for plasma treatment, and apparatus for plasma ... |
| 03/03/2004 | CN1479796A Coated cutting tool insert with iron-nickel based binder phase |
| 03/03/2004 | CN1479683A Production device for DLC film-coated plastic container and production method therefor |
| 03/03/2004 | CN1140933C Photoelectric element and method of producing same |
| 03/03/2004 | CN1140651C Chemical gas-phase deposition and osmosis process precursor supply and monitoring and equipment |
| 03/03/2004 | CN1140650C Drive circuit of pulse power supply for plasma aided chemical gas-phase deposition apparatus |
| 03/02/2004 | US6701202 Performance evaluation method for plasma processing apparatus |
| 03/02/2004 | US6701066 Delivery of solid chemical precursors |
| 03/02/2004 | US6700202 Reducing the oxidized interface with a hydrogen containing plasma and introducing second-layer-forming compounds |
| 03/02/2004 | US6700099 Wafer chuck having thermal plate with interleaved heating and cooling elements, interchangeable top surface assemblies and hard coated layer surfaces |
| 03/02/2004 | US6699786 Method for forming a semiconductor device that uses a low resistance tungsten silicide layer with a strong adherence to an underlayer |
| 03/02/2004 | US6699784 Method for depositing a low k dielectric film (K>3.5) for hard mask application |
| 03/02/2004 | US6699783 Method for controlling conformality with alternating layer deposition |
| 03/02/2004 | US6699768 Method for forming capacitor of semiconductor device |
| 03/02/2004 | US6699752 Formation of conductive rugged silicon |
| 03/02/2004 | US6699531 Enhancing the thermostability of a fluorine containing carbon film capable of being used as, e.g., an interlayer dielectric by reacting fluorine within film with hydrogen plasma |
| 03/02/2004 | US6699530 Method for constructing a film on a semiconductor wafer |
| 03/02/2004 | US6699525 Method of forming carbon nanotubes and apparatus therefor |
| 03/02/2004 | US6699524 Method and apparatus for feeding gas phase reactant into a reaction chamber |
| 03/02/2004 | US6699375 Method of extending process kit consumable recycling life |
| 03/02/2004 | US6699022 Vacuum exhaust apparatuses and vacuum exhaust methods |
| 03/02/2004 | US6698728 Method and apparatus for delivering precursors to a plurality of epitaxial reactor sites |
| 03/02/2004 | CA2323255C Gas shower unit for semiconductor manufacturing apparatus and semiconductor manufacturing apparatus |
| 02/26/2004 | WO2004017394A1 Method for the vertical structuring of substrates in semiconductor process technology by means of non-conforming deposition |
| 02/26/2004 | WO2004017383A2 Low termperature deposition of silicon oxides and oxynitrides |
| 02/26/2004 | WO2004017378A2 Atomic layer deposition of high k metal silicates |
| 02/26/2004 | WO2004017377A2 Atomic layer deposition of high k metal oxides |
| 02/26/2004 | WO2003078874A3 Coated microfluidic delivery system |
| 02/26/2004 | WO2003064059A3 Integration of titanium and titanium nitride layers |
| 02/26/2004 | WO2003054247A3 Cleaning gas composition for semiconductor production equipment and cleaning method using the gas |
| 02/26/2004 | WO2003038892A3 Atomic-layer-deposited tantalum nitride and alpha-phase tantalum as barrier layers for copper metallization |
| 02/26/2004 | WO2002082530A3 In-situ thickness measurement for use in semiconductor processing |
| 02/26/2004 | WO2002067319A8 Copper interconnect structure having diffusion barrier |
| 02/26/2004 | US20040039219 Chemical vapor deposition by dosing with a stabilizer of free-radical inhibitors, end-capping agents and mixtures; forming low-dielectric constant thin films which lower power consumption, reduces cross-talk, and shortens signal delay |
| 02/26/2004 | US20040038554 Composite dielectric forming methods and composite dielectrics |
| 02/26/2004 | US20040038551 Method for controlling the temperature of a gas distribution plate in a process reactor |
| 02/26/2004 | US20040038550 Thin interface layer to improve copper etch stop |
| 02/26/2004 | US20040038545 Plasma processes for depositing low dielectric constant films |
| 02/26/2004 | US20040038525 Enhanced atomic layer deposition |
| 02/26/2004 | US20040038514 Method for forming low-k hard film |
| 02/26/2004 | US20040038494 Manufacturing method of semiconductor integrated circuit device |
| 02/26/2004 | US20040038477 Haze-free BST films |
| 02/26/2004 | US20040038069 CVD codeposition of Al and one or more reactive (gettering) elements to form protective aluminide coating |
| 02/26/2004 | US20040038051 Total area of a base surface of projections >/= 250 nm high occupies >/= 5% of an area of a surface on which the conductive film is formed; increasing the adhesion strength between conductive film-crystalline silicon thin film |
| 02/26/2004 | US20040038033 Dlc layer system and method for producing said layer system |
| 02/26/2004 | US20040037973 Deposition and chamber treatment methods |
| 02/26/2004 | US20040037972 Patterned granulized catalyst layer suitable for electron-emitting device, and associated fabrication method |
| 02/26/2004 | US20040037971 Supplies plasma processing gas into chamber, sets pressure to preset value, generates plasma by capacitatively coupled discharge, emission of electromagnetic wave by radio frequency displacement current and forming magnetic field |
| 02/26/2004 | US20040037970 Method for forming gas cluster and method for forming thin film |