Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
02/2004
02/26/2004US20040037958 CVD condeposition of A1 and one or more reactive (gettering) elements to form protective aluminide coating
02/26/2004US20040037946 Methods for surface modification
02/26/2004US20040037768 One embodiment of the system comprising a process gas generation cabinet, wherein the process gas generation cabinet comprises a housing, encompassing a process gas generator, and an exhaust and abatement system. The cabinet
02/26/2004US20040036403 Fabrication method of carbon nanotubes
02/26/2004US20040035531 Apparatus for controlling the temperature of a gas distribution plate in a process reactor
02/26/2004US20040035530 Sheet-fed treating device
02/26/2004US20040035365 Plasma processing apparatus
02/26/2004US20040035364 Plasma processing apparatus and method for asssembling the plasma processing apparatus
02/26/2004US20040035362 Atomic layer deposition method and semiconductor device fabricating apparatus having rotatable gas injectors
02/26/2004US20040035361 Apparatus and method for forming deposited film
02/26/2004US20040035359 Heat-treating apparatus and heat-treating method
02/26/2004US20040035358 Reactors having gas distributors and methods for depositing materials onto micro-device workpieces
02/26/2004US20040035202 Method and device for the metered delivery of low volumetric flows of liquid
02/26/2004DE10328872A1 Paraelektrisches Material für ein Halbleiterbauelement und Herstellungsverfahren desselben Thereof paraelectric material for a semiconductor device and manufacturing method
02/26/2004DE10328578A1 Hartmaske aus amorphen Kohlenstoff-Wasserstoff-Schichten Hard mask of amorphous carbon-hydrogen layers
02/26/2004DE10326136A1 Entladungsplasma-Bearbeitungsanlage mit magnetischer neutraler Linie Discharge plasma processing system with magnetic neutral line
02/26/2004DE10258681A1 Process for applying alternating layers e.g. barrier layers onto a plastic bottle by chemical gas phase deposition comprises depositing an organic adhesion promoting layer on a substrate and applying an inorganic barrier layer
02/25/2004EP1391941A1 Production method for light emitting element absract:
02/25/2004EP1391919A1 Ceramic heater for semiconductor manufactring/inspecting apparatus
02/25/2004EP1391911A1 Microwave plasma generator
02/25/2004EP1391535A1 Device for receiving and vacuum sealing of a container having an opening
02/25/2004EP1391531A2 Thermal barrier coating with nitride particles
02/25/2004EP1391429A1 Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin film
02/25/2004EP1390968A1 Smooth multipart substrate support member for cvd
02/25/2004EP1390964A1 Dipole ion source
02/25/2004EP1390566A2 Composite material and method for production thereof
02/25/2004EP1390561A1 Method and device for depositing layers
02/25/2004EP1390559A1 Method for producing a layer with a predefined layer thickness profile
02/25/2004EP1390558A1 Penning discharge plasma source
02/25/2004EP1390174A1 Apparatus and method for controlling temperature uniformity of substrates
02/25/2004EP1390157A1 Method and apparatus for temperature controlled vapor deposition on a substrate
02/25/2004CN1478292A Mobile plating system and method
02/25/2004CN1477682A Plasma processing device and method thereof
02/25/2004CN1477240A Deposition method of seed-crystal-free and bias-less diamond quasi-monocrystal film
02/25/2004CN1139672C Liquid conveying system
02/25/2004CN1139671C Method of depositing electrocatalyst and electrodes formed by such method
02/25/2004CN1139448C Direct quick precision metal type forming method based on liquid thermochemical reaction
02/24/2004US6696700 Higher conductivity and deposition area thin film
02/24/2004US6696663 Inductively coupled plasma apparatus
02/24/2004US6696362 Method for using an in situ particle sensor for monitoring particle performance in plasma deposition processes
02/24/2004US6696157 Diamond-like glass thin films
02/24/2004US6696109 Chemical vapor deposition process for depositing titanium silicide films from an organometallic compound
02/24/2004US6696108 Placing article to be processed in reaction container and simultaneously supplying at least two high-frequency powers having mutually different frequencies to the same high frequency electrode to generate plasma in reaction container
02/24/2004US6695955 Method of forming polycrystalline silicon for liquid crystal display device
02/24/2004US6695925 Immersion in aqueous solution containing 12% hydrogen peroxide (h2o2), sodium and potassium ions; immersing in water tank; immersing in isopropyl alcohol; drying with heated nitrogen gas
02/24/2004US6694809 Flow controller
02/24/2004US6694792 Substrate treatment process
02/24/2004CA2072160C Alumina coated sintered body
02/19/2004WO2004015750A1 Heat treatment method and heat treatment apparatus
02/19/2004WO2004015742A2 High rate deposition in a batch reactor
02/19/2004WO2004015348A1 Led heat lamp arrays for cvd heating
02/19/2004WO2004015166A2 Method of forming a coating on a plastic glazing
02/19/2004WO2004015165A1 Improvements to showerheads
02/19/2004WO2004015164A1 Pyrrolyl complexes of copper for copper metal deposition
02/19/2004WO2004014811A1 Apparatus and method for measuring the weight of an optical fiber preform during a chemical deposition process for forming the preform
02/19/2004WO2004014644A1 Laminate having adherent layer and laminate having protective film
02/19/2004WO2004001809A3 Method for energy-assisted atomic layer deposition and removal
02/19/2004WO2003100123B1 Ceramic thin film on various substrates, and process for producing same
02/19/2004WO2003091822A3 Method for producing nitrides and uses thereof as fluorescent markers and light-emitting diodes
02/19/2004WO2003048406A3 Coating method and coating
02/19/2004WO2003030224A3 Barrier formation using novel sputter-deposition method
02/19/2004WO2003017341A3 Methods of forming metal-comprising materials and capacitor electrodes; and capacitor constructions
02/19/2004WO2002094458A3 Method for producing a coated synthetic body
02/19/2004US20040033703 Method for forming amino-free low k material
02/19/2004US20040033699 Method of making an integrated circuit using an EUV mask formed by atomic layer deposition
02/19/2004US20040033698 Method of forming oxide layer using atomic layer deposition method and method of forming capacitor of semiconductor device using the same
02/19/2004US20040033688 Atomic layer deposition methods
02/19/2004US20040033679 Patterning of nanostructures
02/19/2004US20040033650 Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer
02/19/2004US20040033393 WC-Co cemented carbide with a low content of cubic carbides and a highly W-alloyed binder phase; coating of a titanium carbonitride with columnar grains followed by a layer of kappa -Al2O3 and a top layer of TiN
02/19/2004US20040033373 Low kappa dielectric inorganic/organic hybrid films and methods of making
02/19/2004US20040033371 Deposition of organosilsesquioxane films
02/19/2004US20040033361 Component of glass-like carbon for CVD apparatus and process for production thereof
02/19/2004US20040033318 Apparatus and method for forming thin-film
02/19/2004US20040033310 Deposition methods
02/19/2004US20040033180 Method and apparatus for producing silicon oxide-based ceramic membrane by gas phase synthesis
02/19/2004US20040031564 Alumina, zirconium silicate, feldspar, pottery stone, siliceous limestone, kaolin, gairome clay (Japan), and black soil; compressed into blocks, dehydrated; storing thermal energy after being roasted for a short time, releasing the energy to produce progressive temperature rise; skin rehabilitation
02/19/2004US20040031438 Cast diamond products and formation thereof by chemical vapor deposition
02/19/2004DE10258680A1 Process for applying alternating layers e.g. barrier layers onto a plastic bottle by chemical gas phase deposition comprises depositing an organic adhesion promoting layer on a substrate and applying an inorganic barrier layer
02/19/2004CA2494631A1 Method of forming a coating on a plastic glazing
02/18/2004CN2603811Y Heat treatment facilities
02/18/2004CN1476057A Plasma processor and variable impedance apparatus correcting method
02/18/2004CN1475599A Laser CVD apparatus and laser CVD method
02/18/2004CN1475598A Deivce for preventing condensation of plasma eraporating and plating equipment
02/18/2004CN1139105C Laser annealing method for semiconductor layer
02/18/2004CN1138872C Deposition of silicon dioxide and silicon oxynitride using bis(tertiarybutylamino)
02/17/2004US6693302 Semiconductor light-emitting element
02/17/2004US6693030 Reactive preclean prior to metallization for sub-quarter micron application
02/17/2004US6693022 CVD method of producing in situ-doped polysilicon layers and polysilicon layered structures
02/17/2004US6692834 Depositing, preferably by plasma glow discharge, a reactant monomer on at least one surface of an implantable device, preferably at ambient temperature
02/17/2004US6692833 By chemical vapor deposition on a non-conductive substrate using as precursor a metal halide and/or organometallic compound and a reducing agent; allows another metal conducting layer to be deposited by electrolysis
02/17/2004US6692822 Wear resistance, high toughness properties and good resistance to plastic deformation; performance
02/17/2004US6692795 Method for fabricating semiconductor device having ruthenium layer and equipment for fabricating the same
02/17/2004US6692794 Composite and manufacturing method therefor
02/17/2004US6692648 Method of plasma heating and etching a substrate
02/17/2004US6692622 Plasma processing apparatus with an electrically conductive wall
02/17/2004US6692576 Wafer support system
02/17/2004US6692575 Apparatus for supporting a substrate in a reaction chamber
02/17/2004US6692574 Gas dispersion apparatus for use in a hot filament chemical vapor deposition chamber
02/17/2004US6692569 A-site-and/or b-site-modified pbzrtio3 materials and (pb, sr, ca, ba, mg) (zr, ti,nb, ta)o3 films having utility in ferroelectric random access memories and high performance thin film microactuators