Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
03/2004
03/16/2004US6706627 Method of manufacturing capacitor with a diffusion barrier containing ruthenium, titanium and nitrogen
03/16/2004US6706620 Method for fabricating a nitride film
03/16/2004US6706585 Chemical vapor deposition process for fabricating layered superlattice materials
03/16/2004US6706541 Method and apparatus for controlling wafer uniformity using spatially resolved sensors
03/16/2004US6706336 Silicon-based film, formation method therefor and photovoltaic element
03/16/2004US6706335 Effecting high frequency plasma chemical vapor deposition using a source gas comprising a silicon halide (silicon chloride or fluoride) and hydrogen forming a silicon thin film
03/16/2004US6706327 Method of making cemented carbide body
03/16/2004US6706205 Semiconductor processing article
03/16/2004US6706201 Method for producing metallized substrate materials
03/16/2004US6706142 Systems and methods for enhancing plasma processing of a semiconductor substrate
03/16/2004US6706115 Atomic Layer Deposition; alternate surface reactions of metal and nitrogen source materials, the nitrogen compound having a hydrocarbon, amino or silyl group bound to nitrogen, which group dissociates to form a reducing agentas a reducing agent
03/16/2004US6706113 Heating then quickly quenching calcium sulfate (gypsum); dehydration; cement binder
03/16/2004US6705806 Cutting tool coated with diamond
03/16/2004US6705394 Rapid cycle chuck for low-pressure processing
03/16/2004US6705246 RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition
03/16/2004US6705245 Apparatus for forming polymer continuously on the surface of metal by DC plasma polymerization
03/11/2004WO2004021423A1 Method of forming nanocrystals
03/11/2004WO2004021422A1 Processing device, mounting table, processing method
03/11/2004WO2004021421A1 Method for manufacturing silicon epitaxial wafer
03/11/2004WO2004021415A1 Treating apparatus and method of treating
03/11/2004WO2004021392A1 Gas tube end cap for a microwave plasma generator
03/11/2004WO2004020695A1 Substrate processing unit, method of detecting end point of cleaning of substrate processing unit, and method of detecting end point of substrate processing
03/11/2004WO2004020694A1 Substrate processor and method of cleaning the same
03/11/2004WO2004020693A1 Cleaning method for substrate-processing device and the device
03/11/2004WO2004020692A1 Substrate treating apparatus
03/11/2004WO2004020691A2 Systems and methods for forming zirconium and/or hafnium-containing layers
03/11/2004WO2004020690A1 Systems and methods for forming metal oxides using alcohols
03/11/2004WO2004020689A2 Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides
03/11/2004WO2004020688A1 Metal sulfide thin film and method for production thereof
03/11/2004WO2004020687A1 High throughput deposition apparatus
03/11/2004WO2003089680A3 Process modules for transport polymerization of low dieletric constant thin films
03/11/2004WO2003069655A3 Electronic micro component including a capacitive structure
03/11/2004WO2003065424A3 Apparatus for cyclical deposition of thin films
03/11/2004WO2003054911A8 Plasma process apparatus
03/11/2004US20040048493 Method and device for heat treatment
03/11/2004US20040048492 Apparatus for reducing plasma charge damage for plasma processes
03/11/2004US20040048490 Interlayer insulation film used for multilayer interconnect of semiconductor integrated circuit and method of manufacturing the same
03/11/2004US20040048485 In-situ sequential high density plasma deposition and etch processing for gap fill
03/11/2004US20040048467 Devices containing platinum-iridium films and methods of preparing such films and devices
03/11/2004US20040048461 Methods and apparatus for forming barrier layers in high aspect ratio vias
03/11/2004US20040048452 Method of producing electronic device material
03/11/2004US20040048451 Rhodium film and method of formation
03/11/2004US20040048449 Support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices
03/11/2004US20040048398 Mask repair with electron beam-induced chemical etching
03/11/2004US20040048220 Thermal process station with heated lid
03/11/2004US20040048134 Low-contact-resistance interface structure between separator and carbon material for fuel cell, separator and carbon material used therein, and production method for stainless steel separator for fuel cell
03/11/2004US20040047990 Introducing a first portion of a reactant gas to center opening region; introducing a second portion of reactant gas to outer region; wherein first and second portions are controlled proportions
03/11/2004US20040047059 Object which has optical layers
03/11/2004US20040046497 Diffusion barrier coatings having graded compositions and devices incorporating the same
03/11/2004US20040046260 Plasma treatment for copper oxide reduction
03/11/2004US20040046165 Plasma encapsulation for electronic and microelectronic components such as oleds
03/11/2004US20040046130 Apparatus and method for synthesizing films and coatings by focused particle beam deposition
03/11/2004US20040045889 High conductivity particle filter
03/11/2004US20040045577 Cleaning of processing chambers with dilute NF3 plasmas
03/11/2004US20040045576 Plasma cleaning gas with lower global warming potential than SF6
03/11/2004US20040045574 Semiconductor fabrication equipment parts includes determining a definition for a clean part including multiple maximum acceptable impurity levels; determining an initial multiple impurity levels of a part prior to its cleaning process and
03/11/2004US20040045509 Reduced friction lift pin
03/11/2004US20040045508 Plasma cvd system
03/11/2004US20040045505 Process for forming a microcrystalline silicon series thin film and apparatus suitable for practicing said process
03/11/2004US20040045504 One of the layers is formed from a material produced by a redox reaction occurring in a deposited solution.
03/11/2004US20040045503 Method for treating a surface of a reaction chamber
03/11/2004DE4126216B4 Vorrichtung für Dünnschichtverfahren zur Behandlung großflächiger Substrate Apparatus for thin-film processes for the treatment of large area substrates
03/11/2004DE10240221A1 Verfahren zum Herstellen dünner Präzisionsrohre A method for producing thin precision tubes
03/11/2004DE10239083A1 Device for supplying a process chamber with fluid media comprises a supply line having a supply opening, seals assigned to the supply opening, and tensioning units for tensioning the supply line on a receiver of the process chamber
03/10/2004EP1396884A2 Interlayer insulation film used for multilayer interconnect of semiconductor integrated circuit and method of manufacturing the same
03/10/2004EP1396878A1 Production method for semiconductor substrate and semiconductor element
03/10/2004EP1396877A2 Substrate for electronic devices, manufacturing method therefor, and electronic device
03/10/2004EP1396554A1 Plasma cvd apparatus
03/10/2004CN1481582A Processing method and processing appts
03/10/2004CN1481449A Injector and method for prolonged introduction of reagents into plasma
03/10/2004CN1481448A Plating method of metal film on surface of polymer
03/10/2004CN1480998A Method for forming silica layer on substrate by adopting atomic layer deposition technique
03/10/2004CN1141416C Indium source reagent compsns.
03/09/2004US6704913 In situ wafer heat for reduced backside contamination
03/09/2004US6704667 Real time mass flow control system with interlock
03/09/2004US6704188 Ultra thin TCS (SiCL4) cell nitride for dram capacitor with DCS (SiH2Cl2) interface seeding layer
03/09/2004US6703708 Graded thin films
03/09/2004US6703592 System of controlling the temperature of a processing chamber
03/09/2004US6703289 Method for forming crystalline silicon layer and crystalline silicon semiconductor device
03/09/2004US6703288 Compound crystal and method of manufacturing same
03/09/2004US6703081 Installation and method for vacuum treatment or powder production
03/09/2004US6702901 Chamber for chemical vapor deposition
03/09/2004US6702899 Vacuum processing apparatus
03/09/2004US6702898 Deposited film forming apparatus
03/04/2004WO2004019399A1 Gas supply system and treatment system
03/04/2004WO2004019381A2 Barrier coatings produced by atmospheric glow discharge
03/04/2004WO2004019368A2 Reduced volume plasma reactor
03/04/2004WO2004018573A2 Method of coating a surface with an organic film
03/04/2004WO2003100121A3 Multistation coating device and method for plasma coating
03/04/2004WO2003040440A3 Apparatus and method for diamond production
03/04/2004US20040044419 Semiconductor manufacturing apparatus and semiconductor device manufacturing method
03/04/2004US20040044163 Single source mixtures of metal siloxides
03/04/2004US20040043639 Method and apparatus for transferring heat from a substrate to a chuck
03/04/2004US20040043637 Method of forming silicon nitride deposited film
03/04/2004US20040043636 Systems and methods for forming tantalum oxide layers and tantalum precursor compounds
03/04/2004US20040043635 Systems and methods for forming metal oxides using metal diketonates and/or ketoimines
03/04/2004US20040043634 Systems and methods for forming metal-doped alumina
03/04/2004US20040043633 Systems and methods for forming refractory metal oxide layers
03/04/2004US20040043632 Systems and methods for forming metal oxides using alcohols
03/04/2004US20040043631 Method and apparatus for treating a semi-conductor substrate