Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
04/2004
04/01/2004WO2004003962A3 Thermal sprayed yttria-containing coating for plasma reactor
04/01/2004WO2003089684A3 Method and device for depositing thin layers on a substrate in a height-adjustable process chamber
04/01/2004WO2003088334A3 Deposition of gate metallization and passivation layers for active matrix liquid crystal display (amlcd) applications
04/01/2004WO2003088328A3 Method for production of a capacitive structure above a metallisation level of an electronic component
04/01/2004WO2003087427A3 Laser drilled surfaces for substrate processing chambers
04/01/2004WO2003046255A8 Field emission device and method of fabricating same
04/01/2004WO2002074473A3 Method of producing tantalum and niobium alkoxides
04/01/2004US20040063883 Process for producing an organic polymer film whereby when using it as an interlayer insulating film in a semiconductor device, the film exhibits higher adhesiveness at its interface where other semiconductor materials are in contact with the
04/01/2004US20040063839 Method of producing an electron emitting device using a carbon fiber using a catalyst, capable of preferably growing carbon fibers at a low temperature without the need of a high temperature process for growing the carbon fibers or a high
04/01/2004US20040063335 Haze-free BST films
04/01/2004US20040063310 Interconnects with improved barrier layer adhesion
04/01/2004US20040063301 Method of forming a controlled and uniform lightly phosphorous doped silicon film
04/01/2004US20040062867 Method to reduce photoresist poisoning
04/01/2004US20040062865 Gas distributor for vapor coating method and container
04/01/2004US20040062863 Multilayer; overcoating substrate with dielectric; atomic layer deposition
04/01/2004US20040062624 Vented cold ring, processes, and methods of using
04/01/2004US20040062504 Using deuterated source gasses to fabricate low loss GeSiON SiON waveguides
04/01/2004US20040062283 System and method for fabricating efficient semiconductor lasers via use of precursors having a direct bond between a group III atom and a nitrogen atom
04/01/2004US20040062081 Multilayer dielectric tunnel barrier used in magnetic tunnel junction devices, and its method of fabrication
04/01/2004US20040061114 High carrier concentration p-type transparent conducting oxide films
04/01/2004US20040060904 Tool having a plurality of electrodes and corresponding method of altering a very small surface
04/01/2004US20040060661 Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
04/01/2004US20040060658 Method and apparatus for an improved baffle plate in a plasma processing system
04/01/2004US20040060617 Doping the liner with a passivating agent plasma (e.g., N2 or Cl2) to form a barrier prior to annealing to prevent diffusion of impurities such as silicon and fluorine
04/01/2004US20040060519 Quartz to quartz seal using expanded PTFE gasket material
04/01/2004US20040060518 Apparatus for inverted multi-wafer MOCVD fabrication
04/01/2004US20040060514 Gas distribution showerhead
04/01/2004US20040060513 Processing method and processing apparatus
04/01/2004US20040060512 High temperature anneal with improved substrate support
04/01/2004US20040060477 Ink comprising a metal organic compound; a water-soluble polymer and a solvent; applying the ink on a substrate, heating to form metal catalyst, and forming carbon fibers by contacting a gas containing carbon with the catalyst
03/2004
03/31/2004EP1403911A2 Thin film device and its fabrication method
03/31/2004EP1403902A1 Method and arrangement for generating an atmospheric pressure glow discharge plasma (APG)
03/31/2004EP1403399A2 Titanium article having improved corrosion resistance
03/31/2004EP1403388A1 Process for making products by high temperature deformation
03/31/2004EP1402316A2 Mask repair with electron beam-induced chemical etching
03/31/2004EP1401960A2 Coal tar and hydrocarbon mixture pitch and the preparation and use thereof
03/31/2004EP1314191B1 Composite structure for electronic microsystems and method for production of said composite structure
03/31/2004EP1313744A4 Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition
03/31/2004EP1261560B1 Radiation-transmissive films on glass articles
03/31/2004CN1144274C Semiconductor device manufacturing apparatus and semiconductor device manufacturing method
03/31/2004CN1144064C Method of organic film deposition
03/31/2004CN1143907C Truncated susceptor for vapor-phase deposition
03/30/2004US6714833 Performance evaluation method for plasma processing apparatus
03/30/2004US6713968 Plasma processing apparatus
03/30/2004US6713824 Reliable semiconductor device and method of manufacturing the same
03/30/2004US6713797 Textured Bi-based oxide ceramic films
03/30/2004US6713424 Method of making fluid diffusion layers and electrodes having reduced surface roughness
03/30/2004US6713407 Method of forming a metal nitride layer over exposed copper
03/30/2004US6713390 Barrier layer deposition using HDP-CVD
03/30/2004US6713316 Method for removing foreign matter, method for forming film, semiconductor device and film forming apparatus
03/30/2004US6713216 Thin alkali metal film member and method of producing the same
03/30/2004US6713199 Plurality of separate layers, each having a thickness of less than 500 angstrom , and based on hafnium dioxide (hfo2), zirconium dioxide (zro2) and alumina (al2o3). in practice, the hafnium dioxide, zirconium dioxide and alumina layers form
03/30/2004US6713198 Ceramic laminated article, a method of producing the same and a ceramic laminate
03/30/2004US6713188 Clean aluminum alloy for semiconductor processing equipment
03/30/2004US6713178 Diamond-like carbon
03/30/2004US6713177 Insulating and functionalizing fine metal-containing particles with conformal ultra-thin films
03/30/2004US6713172 Oxide coated cutting tool
03/30/2004US6713127 Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD
03/30/2004US6712943 Methods for angle limiting deposition mask
03/30/2004US6712928 Method and its apparatus for detecting floating particles in a plasma processing chamber and an apparatus for processing a semiconductor device
03/30/2004US6712927 Chamber having process monitoring window
03/30/2004US6712909 Substrate processing apparatus and method for manufacturing semiconductor device
03/30/2004US6712908 Purified silicon production system
03/30/2004US6712020 Toroidal plasma source for plasma processing
03/30/2004CA2263333C Improved plasma jet system
03/25/2004WO2004025749A2 Diffusion barrier coatings having graded compositions and devices incorporating the same
03/25/2004WO2004025716A1 Flow-type thin film deposition apparatus and injector assembly therefor
03/25/2004WO2004025697A2 Thermal process station with heated lid
03/25/2004WO2004024982A1 Film forming device
03/25/2004WO2004024981A2 Precursor material delivery system for atomic layer deposition
03/25/2004WO2004024980A1 Organic compound for cvd raw material and process for producing thin film of metal or metal compound with the use of organic compound
03/25/2004WO2004024976A1 Component protected against corrosion and method for the production thereof and device for carrying out said method
03/25/2004WO2004024804A1 Method for producing poly(methyl methacrylate)-metal cluster composite
03/25/2004WO2004024296A1 High conductivity particle filter
03/25/2004WO2003106729A3 Method of making automotive trim with chromium inclusive coating thereon, and corresponding automotive trim product
03/25/2004WO2003056619A3 Selective deposition of a barrier layer on a dielectric material
03/25/2004WO2003056066A3 Apparatus for the generation and supply of fluorine gas
03/25/2004US20040058560 Fast gas exchange for thermal conductivity modulation
03/25/2004US20040058559 Rapid deposition of borosilicate glass films
03/25/2004US20040058510 Solid material gasification method, thin film formation process and apparatus
03/25/2004US20040058492 Vapor growth method for metal oxide dielectric film and pzt film
03/25/2004US20040058464 Method and device for treating semiconductor substrates
03/25/2004US20040058463 Method of forming a p-type group II-VI semiconductor crystal layer on a substrate
03/25/2004US20040058359 Erbin as a negative regulator of Ras-Raf-Erk signaling
03/25/2004US20040058293 Assembly line processing system
03/25/2004US20040058199 Hexagonal boron nitride film with low dielectric constant, layer dielectric film and method of production thereof, and plasma CVD apparatus
03/25/2004US20040058190 Having integral incorporation of a platinum group metal or alloy thereof directly or indirectly attached to a minor surface portion of article
03/25/2004US20040058167 Article having nano-scaled structures and a process for making such article
03/25/2004US20040058155 Corrosion and erosion resistant thin film diamond coating and applications therefor
03/25/2004US20040058090 Depositing a coating on a substrate with a solution comprising a resin molecule containing Si-H groups, Si-CH3 groups, exposing coating to ultraviolet radiation at a power to cause hydrolysis; evaporating solvent to form a porous network
03/25/2004US20040058080 Method for creating silicon dioxide film
03/25/2004US20040058076 Forming a barrier layer on the substrate; forming a porous material layer on the barrier layer, forming an amorphous silicon layer on the porous material layer; performing a laser annealing to form a polysilicon layer
03/25/2004US20040056356 Methods and apparatus for forming a film on a substrate
03/25/2004US20040056269 Passivation structure
03/25/2004US20040056211 Method of surface texturizing
03/25/2004US20040055708 Apparatus and method for in-situ cleaning of borosilicate (BSG) and borophosphosilicate (BPSG) films from CVD chambers
03/25/2004US20040055537 Transfer chamber for vacuum processing system
03/25/2004DE10314534A1 Manufacture of metal film for semiconductor device, comprises treating metal film with nitrogen plasma to form insulation film containing nitrogen
03/25/2004DE10243022A1 Abscheidung eines Feststoffs durch thermische Zersetzung einer gasförmigen Substanz in einem Becherreaktor Deposition of a solid by thermal decomposition of a gaseous substance in a beaker reactor
03/25/2004DE10242752A1 Device for automatically charging machines e.g. reactors, chambers and coating units comprises units for transporting, introducing and removing objects