Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
04/2004
04/21/2004CN1147007C Process for forming microcrystalline silicon series thin film and apparatus suitable for practicing said process
04/21/2004CN1146967C Etching technology for reducing corrosion of metal patterns of coated layer on substrate
04/21/2004CN1146675C Super hydrophobic coated substrates
04/20/2004US6724086 Hydrogenated oxidized silicon carbon material
04/20/2004US6724017 In a two-dimensional or three-dimensional lattice; coulomb blocking devices using quantum dots.
04/20/2004US6723665 Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the process
04/20/2004US6723664 Method and apparatus for depositing a thin film, and semiconductor device having a semiconductor-insulator junction
04/20/2004US6723660 Thin-film forming apparatus and thin-film forming method
04/20/2004US6723642 Method for forming nitrogen-containing oxide thin film using plasma enhanced atomic layer deposition
04/20/2004US6723641 Method of manufacturing semiconductor device and method of determining film formation time, chamber, chemical vapor deposition apparatus and boat thereof, etching apparatus, and film formation process system
04/20/2004US6723598 Method for manufacturing aluminum oxide films for use in semiconductor devices
04/20/2004US6723595 Thin film deposition method including using atomic layer deposition without purging between introducing the gaseous reactants
04/20/2004US6723448 Method of manufacturing honeycomb extrusion die and die manufactured according to this method
04/20/2004US6723437 Semiconductor processing component having low surface contaminant concentration
04/20/2004US6723421 Semiconductor with coordinatively irregular structures
04/20/2004US6723382 Polymer impregnation and pyrolysis
04/20/2004US6723381 Organic silicon polymer is infiltrated and charged into gaps in a matrix phase of a formed fiber fabric of silicon carbide
04/20/2004US6723202 Worktable device and plasma processing apparatus for semiconductor process
04/20/2004US6723201 Microchip fabrication chamber wafer detection
04/20/2004US6723186 Method of manufacturing metallic film consisting of giant single crystal grains
04/20/2004US6722159 Photocatalytically-activated self-cleaning article and method of making same
04/20/2004CA2211705C Diamond
04/15/2004WO2004032219A1 Plasma processing system
04/15/2004WO2004032214A1 Plasma film forming system
04/15/2004WO2004032213A1 High frequency plasma generator and high frequency plasma generating method
04/15/2004WO2004032200A2 Systems and methods for improved gas delivery
04/15/2004WO2004032196A2 Method of fabricating semiconductor by nitrogen doping of silicon film
04/15/2004WO2004031443A1 Method for forming thin film and apparatus therefor
04/15/2004WO2004031442A1 Plasma processing system and its substrate processing process, plasma enhanced chemical vapor deposition system and its film deposition process
04/15/2004WO2004031441A1 Device for carrying out a plasma-assisted process
04/15/2004WO2004031440A1 Method for forming thin film, apparatus for forming thin film, and method for monitoring thin film forming process
04/15/2004WO2004031439A2 Method and process reactor for sequential gas phase deposition by means of a process and an auxiliary chamber
04/15/2004WO2004031438A1 Internally coated hollow body, coating method and device
04/15/2004WO2004031437A1 Coating method and coated element
04/15/2004WO2004031418A2 Method for manufacturing products by means of deformation at increased temperatures
04/15/2004WO2003095702A3 Method for curing low dielectric constant film by electron beam
04/15/2004WO2003017341B1 Methods of forming metal-comprising materials and capacitor electrodes; and capacitor constructions
04/15/2004WO2002045871A9 System and method for modulated ion-induced atomic layer deposition (mii-ald)
04/15/2004US20040072449 Method of manufacturing semiconductor device using flexible tube
04/15/2004US20040072417 Method of manufacturing a semiconductor element
04/15/2004US20040071946 Ceramic layered product and method for manufacturing the same
04/15/2004US20040071906 Surface modification process
04/15/2004US20040071897 Delivering into a plasma generator, a gas to be activated; activating gas to create a volume of reactive species; delivering fraction of reactive species into processing region to react with substrate; maintaining gas in activated state
04/15/2004US20040071879 Method of film deposition, and fabrication of structures
04/15/2004US20040071878 Surface preparation using plasma for ALD Films
04/15/2004US20040071877 Chemical vapour infiltration method for densifying porous substrates having a central passage
04/15/2004US20040071876 Method for forming nanocrystalline diamond films for cold electron emission using hot filament reactor
04/15/2004US20040071875 Ferroelectric property, and therefore, it can be advantageously used in an electric or electronic device
04/15/2004US20040071874 Apparatus and method for single-wafer-processing type CVD
04/15/2004US20040071613 Plasma processing apparatus
04/15/2004US20040070037 Semiconductor device and method of manufacturing the same
04/15/2004US20040069612 Substrate processing apparatus and substrate processing method
04/15/2004US20040069610 System for in-situ generation of fluorine radicals and/or fluorine-containing interhalogen (XFn) compounds for use in cleaning semiconductor processing chambers
04/15/2004US20040069410 Cluster tool for E-beam treated films
04/15/2004US20040069408 Dual-port end point window for plasma etcher
04/15/2004US20040069231 Chemical vapor deposition process and apparatus thereof
04/15/2004US20040069230 Thin film formation apparatus and thin film formation method employing the apparatus
04/15/2004US20040069227 Processing chamber configured for uniform gas flow
04/15/2004US20040069225 Tandem process chamber
04/15/2004US20040069224 Cold trap for CVD furnace
04/15/2004DE10342548A1 Schnelle Abscheidung von Borsilicatglasfilmen Rapid separation of Borsilicatglasfilmen
04/15/2004DE10296448T5 Verfahren zum Abscheiden einer Schicht mit einer verhältnismässig hohen Dielektrizitätskonstante auf ein Substrat A method for depositing a layer with a relatively high dielectric constant onto a substrate
04/15/2004DE10243841A1 Producing hollow carbon object by gas phase deposition on metal substrate used in medical and biological technology results in tapered cone including axial cavity running from base to tip
04/14/2004EP1408535A2 Heating element CVD system
04/14/2004EP1408140A1 A high-density plasma process for depositing a layer of Silicon Nitride
04/14/2004EP1408138A1 Coating device
04/14/2004EP1406847A1 Visible-light-responsive photoactive coating, coated article and method of making same
04/14/2004EP1112391B1 Modulated plasma glow discharge treatments for making superhydrophobic substrates
04/14/2004EP1055014A4 Free floating shield and semiconductor processing system
04/14/2004EP0963458B1 Process for low temperature cvd using bi-carboxylates
04/14/2004EP0934433B1 Method for depositing fluorine doped silicon dioxide films
04/14/2004CN1489784A Method of producing electronic device material
04/14/2004CN1489782A Method and device for plasma CVD
04/14/2004CN1489779A Zirconia toughtened ceramic components and coatings in semiconductor processing equipment and method of manufacturing thereof
04/14/2004CN1489644A Susceptorless reactor for growing epitaxial layers by chemical vapor deposition
04/14/2004CN1489640A Fullerene coated component of semiconductor processing equipment
04/14/2004CN1489610A Production method for copolymer film, copolymer film for med therefrom, and semiconductor device using said copolymer film
04/14/2004CN1488777A Mixed gas for galss coating and preparing method thereof
04/14/2004CN1146025C Method for forming film
04/14/2004CN1145632C Complex compound of element of sub-group IV
04/14/2004CN1145630C Method for producing metal-ligand compositions
04/13/2004US6721162 Electrostatic chuck having composite dielectric layer and method of manufacture
04/13/2004US6720654 Electronic devices with cesium barrier film and process for making same
04/13/2004US6720531 Temperature uniformity during chemical vapor deposition
04/13/2004US6720275 Methods of fabricating capacitors including Ta2O5 layers in a chamber including changing a Ta2O5 layer to heater separation or chamber pressure
04/13/2004US6720262 Method of forming copper interconnections and thin films using chemical vapor deposition with catalyst
04/13/2004US6720260 Sequential electron induced chemical vapor deposition
04/13/2004US6720259 Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition
04/13/2004US6720251 Applications and methods of making nitrogen-free anti-reflective layers for semiconductor processing
04/13/2004US6720097 Barrier film and method for production thereof
04/13/2004US6720095 Coated cemented carbide body and method for use
04/13/2004US6720037 Plasma processing method and apparatus
04/13/2004US6720035 Method for coating ceramic discs and ceramic disc obtained by said method
04/13/2004US6720031 Preparing substrate placing substrate into chemical vapor deposition chamber; heating; introducing water flow in a carrier gas; stopping water flow; starting flow of copper precursor
04/13/2004US6720027 Cyclical deposition of a variable content titanium silicon nitride layer
04/13/2004US6719909 Band gap plasma mass filter
04/13/2004US6719885 Method of reducing stress induced defects in an HDP-CVD process
04/13/2004US6719876 Internal electrode type plasma processing apparatus and plasma processing method
04/13/2004US6719851 Lid assembly for opening a process chamber lid and uses therefor
04/13/2004US6719849 Single-substrate-processing apparatus for semiconductor process