Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
04/2004
04/13/2004US6719848 Chemical vapor deposition system
04/13/2004US6719842 Ammonia for use in manufacture of GaN-type compound semiconductor and method for manufacturing GaN-type compound semiconductor
04/08/2004WO2004030071A1 Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition
04/08/2004WO2004030067A1 Ozone processing apparatus
04/08/2004WO2004030066A1 Substrate processing apparatus
04/08/2004WO2004030065A1 Substrate processing apparatus
04/08/2004WO2004030064A1 Substrate processing apparatus
04/08/2004WO2004030063A1 Substrate processing apparatus
04/08/2004WO2004030059A1 Method for depositing nitride film using chemical vapor deposition apparatus of single chamber type
04/08/2004WO2004030037A2 System for in-situ generation of fluorine radicals and/or fluorine-containing interhalogen (xfn) compounds for use in cleaning semiconductor processing chambers
04/08/2004WO2004030020A2 Upper electrode plate with deposition shield in a plasma processing system
04/08/2004WO2004030019A1 Method and arrangement for generating an atmospheric pressure glow discharge plasma (apg)
04/08/2004WO2004030013A2 Baffle plate in a plasma processing system
04/08/2004WO2004029325A1 High velocity method for deposing diamond films from a gaseous phase in shf discharge plasma and a plasma reactor for carrying out said method
04/08/2004WO2004018573A3 Method of coating a surface with an organic film
04/08/2004WO2004015166A3 Method of forming a coating on a plastic glazing
04/08/2004WO2004013903A3 Wafer batch processing system and method
04/08/2004WO2004012229A3 Reduced volume, high conductance process chamber
04/08/2004WO2004009299A3 Loading and unloading device for a coating unit
04/08/2004WO2004006977A3 Coatings
04/08/2004WO2003102264A3 Method for depositing silicon nitride or silicon oxynitride, and corresponding product
04/08/2004WO2003087431A3 Deposition methods utilizing phased array microwave excitation, and deposition apparatuses
04/08/2004US20040067661 Method for locally heating a region in a semiconductor substrate
04/08/2004US20040067642 Devices containing zirconium-platinum-containing materials and methods for preparing such materials and devices
04/08/2004US20040067641 Gas distribution system for cyclical layer deposition
04/08/2004US20040067363 Hydrophilic DLC on substrate with oxygen and/or hot water treatment
04/08/2004US20040067354 Tray for vapor phase step
04/08/2004US20040067308 Two-layer film for next generation damascene barrier application with good oxidation resistance
04/08/2004US20040065656 Heated substrate support
04/08/2004US20040065344 Processing apparatus and cleaning method
04/08/2004US20040065261 Truncated dummy plate for process furnace
04/08/2004US20040065260 Heating element CVD system and connection structure between heating element and electric power supply mechanism in the heating element CVD system
04/08/2004US20040065258 Atomic layer deposition methods and atomic layer deposition tools
04/08/2004US20040065256 Systems and methods for improved gas delivery
04/08/2004US20040065255 Cyclical layer deposition system
04/08/2004US20040065253 Method of growing oxide thin films
04/08/2004DE20319104U1 Anordnung zur Wärmebehandlung von Siliziumscheiben in einer Prozesskammer Arrangement for heat treatment of silicon wafers in a process chamber
04/08/2004DE10245553A1 Process for the gas phase deposition of components contained in a process gas flowing along a main flow direction used in the manufacture of transistors or capacitors comprises changing the main flow direction once during the process
04/08/2004DE10245537A1 Verfahren und Prozessreaktor zur sequentiellen Gasphasenabscheidung mittels einer Prozess- und einer Hilfskammer Method and process for sequential vapor deposition reactor by means of a process and an auxiliary chamber
04/08/2004DE10245459A1 Internally coated hollow member, has a coating supplied using a gas plasma by pulling the component to be coated through a ring electrode connected to an HF source and direct current source
04/07/2004EP1406472A1 Ceramic heater and ceramic joined article
04/07/2004EP1405333A1 Apparatus and method of making a slip free wafer boat
04/07/2004EP1405330A2 Process chamber components having textured internal surfaces and method of manufacture
04/07/2004EP1404903A1 Process chamber with a base with sectionally different rotational drive and layer deposition method in such a process chamber
04/07/2004EP1404892A1 Manufacture of silica waveguides with minimal absorption
04/07/2004EP1404891A1 Cvd system comprising a thermally differentiated substrate support
04/07/2004EP1404890A1 Source chemical container assembly
04/07/2004EP1404722A1 Continuous processing apparatus by plasma polymerization with vertical chamber
04/07/2004EP1252364B1 Apparatus and method for epitaxially processing a substrate
04/07/2004EP1198610A4 Low-temperature compatible wide-pressure-range plasma flow device
04/07/2004EP0991337B1 Ornamental stones
04/07/2004EP0771469B1 Method of and apparatus for microwave-plasma production
04/07/2004CN1488166A Ferro electric thin film, metal thin film or oxide thin film, and method and apparatus for preparation thereof, and electric or electronic device using said thin film
04/07/2004CN1488165A Method and device for heat treatment
04/07/2004CN1488164A 等离子体装置及等离子体生成方法 Plasma device and method for generating a plasma
04/07/2004CN1488162A Heat treatment device and heat treatment method
04/07/2004CN1488009A Diamond coatings on reactor wall and method of manufacturing thereof
04/07/2004CN1488008A Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof
04/07/2004CN1487564A Substrate for electronic apparatus, method for producing substrate of electronic apparatus, and electronic apparatus
04/07/2004CN1487118A Plasma decomposition method and apparatus for preparing diamond-like film
04/07/2004CN1144958C Method for high-speed gas-phase carbon deposition for carbon braking disc for aircraft and equipment thereof
04/07/2004CN1144898C PECVD of TaN films from tantalum halide precursors
04/07/2004CN1144896C Plasma treating apparatus
04/06/2004US6718126 Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
04/06/2004US6717368 Plasma generator using microwave
04/06/2004US6717113 Method for substrate thermal management
04/06/2004US6716772 Semiconductor device manufacturing method and semiconductor manufacturing apparatus
04/06/2004US6716770 Vapor deposition using organosilicon compound and fluorohydrocarbon plasma; dielectric
04/06/2004US6716765 Plasma clean for a semiconductor thin film deposition chamber
04/06/2004US6716752 Method of forming silicon oxide layer and method of manufacturing thin film transistor thereby
04/06/2004US6716751 Dopant precursors and processes
04/06/2004US6716748 Reaction chamber for processing a substrate wafer, and method for processing a substrate using the chamber
04/06/2004US6716725 Plasma processing method and semiconductor device
04/06/2004US6716717 Method for fabricating capacitor of semiconductor device
04/06/2004US6716713 Dopant precursors and ion implantation processes
04/06/2004US6716663 Method for removing foreign matter, method for forming film, semiconductor device and film forming apparatus
04/06/2004US6716658 Method of preventing generation of particles in chamber
04/06/2004US6716647 Deliberate semiconductor film variation to compensate for radial processing differences, determine optimal device characteristics, or produce small productions runs
04/06/2004US6716551 Abraded fluid diffusion layer for an electrochemical fuel cell
04/06/2004US6716479 Forming flexibible thin films via chemical vapor deposition, pulse-laser deposition, molecular beam epitaxy, and sputtering; acoustics; telecommunications
04/06/2004US6716477 Method and apparatus for monitoring process exhaust gas, semiconductor-manufacturing device and method and system for managing semiconductor-manufacturing device
04/06/2004US6716476 Method of depositing an optical quality silica film by PECVD
04/06/2004US6716289 Rigid gas collector for providing an even flow of gasses
04/06/2004US6716287 Processing chamber with flow-restricting ring
04/06/2004US6716284 Apparatus and process of improving atomic layer deposition chamber performance
04/06/2004US6715496 Turbomolecular pump coupled to a process chamber, using a fluorinated gas
04/06/2004US6715441 PCVD apparatus and a method of manufacturing an optical fiber, a preform rod and a jacket tube as well as the optical fiber manufactured therewith
04/01/2004WO2004027846A1 Substrate processing apparatus and method of manufacturing semiconductor device
04/01/2004WO2004027838A2 Fast gas exchange for thermal conductivity modulation
04/01/2004WO2004027816A2 A method and apparatus for the compensation of edge ring wear in a plasma processing chamber
04/01/2004WO2004027815A1 Plasma apparatus with device for reducing polymer deposition on a substrate and method for reducing polymer deposition
04/01/2004WO2004027813A1 System for and method of gas cluster ion beam processing
04/01/2004WO2004027127A1 Acicular silicon crystal and process for producing the same
04/01/2004WO2004027112A2 An apparatus for the deposition of high dielectric constant films
04/01/2004WO2004027111A1 Electrode, solid element and device using the same
04/01/2004WO2004027110A2 Additives to prevent degradation of alkyl-hydrogen siloxanes
04/01/2004WO2004026471A1 Photocatalyst material and process for producing the same
04/01/2004WO2004026096A2 Viewing window cleaning apparatus
04/01/2004WO2004011688A3 Method and apparatus for dispersion strengthened bond coats for thermal barrier coatings
04/01/2004WO2004006293A3 Method of annealing electrically conductive zinc oxide films