Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
04/2004
04/28/2004EP1414079A1 Diamond high brightness ultraviolet ray emitting element
04/28/2004EP1414061A1 Heat treatment apparatus
04/28/2004EP1413648A1 Coated cutting tool
04/28/2004EP1413645A1 Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition
04/28/2004EP1413644A2 Thin-film deposition device
04/28/2004EP1412968A2 Substrate support and method of fabricating the same
04/28/2004EP1412552A1 Method for the production of coated substrates
04/28/2004EP1412551A2 Method of making a passivated surface
04/28/2004EP1412550A2 Support with getter-material for microelectronic, microoptoelectronic or micromechanical device
04/28/2004EP1412175A1 Insulating and functionalizing fine metal-containing particles with comformal ultra-thin films
04/28/2004EP1412098A2 Encapsulated long life electroluminescent phosphor
04/28/2004EP1165856B1 Method of making a multilayer article by arc plasma deposition
04/28/2004EP1040175B1 Anti-coking coatings
04/28/2004EP1038306B1 Method and device for improving surfaces
04/28/2004EP1019562B1 Plasma enhanced chemical deposition with low vapor pressure compounds
04/28/2004EP1017510A4 Method and apparatus for gas phase coating complex internal surfaces of hollow articles
04/28/2004EP0995342A4 Method for improved cleaning of substrate processing systems
04/28/2004EP0975820B1 Hard material coating of a cemented carbide or carbide containing cermet substrate
04/28/2004EP0973957A4 Method of making titania-doped fused silica
04/28/2004CN1492493A Support device
04/28/2004CN1492073A Monophyletic mixture of metal oxygen silicide
04/28/2004CN1492072A Surface modifying technology of diamond-like film to titanium-nickel alloy
04/27/2004US6728289 Non-planar micro-optical structures
04/27/2004US6727654 Plasma processing apparatus
04/27/2004US6727456 Deposited film forming method and deposited film forming apparatus
04/27/2004US6727194 Wafer batch processing system and method
04/27/2004US6727190 Method of forming fluorine doped boron-phosphorous silicate glass (F-BPSG) insulating materials
04/27/2004US6727169 Method of making conformal lining layers for damascene metallization
04/27/2004US6727164 Method for fabricating a semiconducting nitride film, susceptor tray, and apparatus for fabricating a semiconducting nitride film
04/27/2004US6727110 Tetraethoxysilane is used during plasma enhances chemical vapor deposition and a layer having low optical losses in the infra-red region is produced; waveguides
04/27/2004US6726987 Coating of a mixed-oxide layer predominantly formed of Al2O3 and containing 0.1 to less-than 3% of TiO2 and 0.01-0.5% of B2O3 homogeneously distributed in Al2O3; especially a cutting insert
04/27/2004US6726955 Method of controlling the crystal structure of polycrystalline silicon
04/27/2004US6726954 Method and system for forming copper thin film
04/27/2004US6726804 RF power delivery for plasma processing using modulated power signal
04/27/2004US6726803 Multi-sectional plasma generator with discharge gaps between multiple elements forming a plasma discharge cavity
04/27/2004US6726802 Plasma processing apparatus
04/27/2004US6726800 Ashing apparatus, ashing methods, and methods for manufacturing semiconductor devices
04/27/2004US6726769 Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
04/22/2004WO2004034454A1 Substrate treating appratus
04/22/2004WO2004034444A1 Heated substrate support
04/22/2004WO2004034443A1 Atomic layer deposition methods and atomic layer deposition tools
04/22/2004WO2004033753A1 Method of forming metal oxide film and microwave power source unit for use in the method
04/22/2004WO2004033752A2 Two-layer film for next generation damascene barrier application with good oxidation resistance
04/22/2004WO2004033750A1 Plasma-assisted micro-scale material deposition
04/22/2004WO2003100828A3 Method of depositing an oxide film by chemical vapor deposition
04/22/2004WO2003093173A8 Diamond synthesis
04/22/2004WO2003060184A3 Method and apparatus for forming silicon containing films
04/22/2004WO2003002269A3 Article having a plasmapolymer coating and method for producing the same
04/22/2004WO2002080244A9 Improved process for deposition of semiconductor films
04/22/2004US20040077184 Apparatuses and methods for depositing an oxide film
04/22/2004US20040077183 Titanium tantalum nitride silicide layer
04/22/2004US20040077182 Method for forming introgen-containing oxide thin film using plasma enhanced atomic layer deposition
04/22/2004US20040077181 Use of phoslon (PNO) for borderless contact fabrication, etch stop/barrier layer for dual damascene fabrication and method of forming phoslon
04/22/2004US20040077162 Thermal activation of fluorine for use in a semiconductor chamber
04/22/2004US20040077161 Method of depositing a material layer
04/22/2004US20040076856 Surface coating of a carbide or a nitride
04/22/2004US20040076837 Formed by plasma-enhanced chemical vapor deposition; for architectural hardware (door handles/levers/grips)
04/22/2004US20040076836 Comprises silicon oxide barrier coated with protective hydrogenated amorphous carbon film; for preventing gas deposition on polymer substrate by low pressure plasma
04/22/2004US20040076767 Method of manufacturing silicon carbide film
04/22/2004US20040076763 Apparatus capable of forming a thin film of high quality having a uniform thickness at a high deposition rate at an increased plasma density without increase of plasma potential
04/22/2004US20040076755 Method for deposition of inert barrier coating to increase corrosion resistance
04/22/2004US20040076751 Sequential chemical vapor deposition
04/22/2004US20040076707 Honeycomb structural body forming ferrule, and method of manufacturing the ferrule
04/22/2004US20040075130 Methods of forming electronic devices including dielectric layers with different densities of titanium and related structures
04/22/2004US20040074609 Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a multi-part electrode
04/22/2004US20040074606 Electrode-built-in susceptor and a manufacturing method therefor
04/22/2004US20040074605 Focus ring for semiconductor treatment and plasma treatment device
04/22/2004US20040074604 Neutral particle beam processing apparatus
04/22/2004US20040074516 The versatile operation of process equipment, and especially semiconductor process chamber clean equipment, from any pressure level ranging from a vacuum to just less than one atmosphere absolute. The system of the present invention
04/22/2004US20040074515 Manufacturing a semiconductor device by removing impurities from a substrate in the processing chamber with a plasma of a first gas including hydrogen gas. After the substrate is removed from the processing chamber, the processing chamber
04/22/2004US20040074444 Ion beam source with gas introduced directly into deposition/vacuum chamber
04/22/2004US20040074438 Novel method to reduce resistivity of atomic layer tungsten chemical vapor depositon
04/22/2004US20040074437 Method of growing single crystal Gallium Nitride on silicon substrate
04/22/2004US20040074260 Method of making heat treatable coated article with diamond-like carbon (DLC) inclusive layer
04/22/2004DE10296935T5 Barrierenverstärkungsprozess für Kupferdurchkontaktierungen(oder Zwischenverbindungen) Barriers amplification process for Kupferdurchkontaktierungen (or intermediates)
04/22/2004DE10296662T5 Systeme und Verfahren zum epitaxialen Aufwachsen von Filmen auf ein Halbleitersubstrat Systems and methods for epitaxial growth of films on a semiconductor substrate
04/22/2004DE10296556T5 Verfahren und Vorrichtung zum Herstellen eines Zwischenstoffes Method and device for producing an intermediate substance
04/22/2004DE10247921A1 Hydride vapor phase epitaxy reactor, to produce pseudo-substrates for electronic components, deposits layers of crystalline substrates from a gas phase with increased growth rates
04/22/2004DE10247888A1 Einrichtung zur Erzeugung von Plasmen durch Hochfrequenzentladungen Means for generating plasma by high frequency discharge
04/22/2004CA2501211A1 Method of forming a metal oxide film and microwave power source device used in the above method
04/21/2004EP1411545A1 Vapor growth method and vapor growth device
04/21/2004EP1411539A2 High frequency discharge plasma generating device
04/21/2004EP1411153A1 METHOD FOR PREPARING GaN BASED COMPOUND SEMICONDUCTOR CRYSTAL
04/21/2004EP1411144A1 METHOD FOR FORMING ULTRA−HIGH STRENGTH ELASTIC DIAMOND LIKE CARBON STRUCTURE
04/21/2004EP1411143A1 Process for producing tubular pieces with an internal diamond coating
04/21/2004EP1411031A1 Ceramic and method for preparation thereof, and dielectric capacitor, semiconductor and element
04/21/2004EP1411028A1 Ceramics film and production method therefor, and ferroelectric capacitor, semiconductor device, other elements
04/21/2004EP1410442A1 Electronic component and method for producing an electronic component
04/21/2004EP1410433A2 Support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices
04/21/2004EP1409766A1 Systems and methods for delivering an ultrapure chemical
04/21/2004EP1409765A1 Method for cvd of bpsg films
04/21/2004EP1409764A1 Method and apparatus for bpsg deposition
04/21/2004EP1320636B1 Method and device for depositing especially, organic layers by organic vapor phase deposition
04/21/2004EP1054934A4 Alkane/polyamine solvent compositions for liquid delivery cvd
04/21/2004EP0968319A4 Multiple vaporizer reagent supply system for chemical vapor deposition utilizing dissimilar precursor compositions
04/21/2004CN1491527A Apparatus for generating low temperature plasma at atmospheric pressure
04/21/2004CN1491435A Method and apparatus for transferring heat from substrate to chuck
04/21/2004CN1491149A Honeycomb structural body forming ferrule, and method of manufacturing ferrule
04/21/2004CN1490851A Thin-film shaper and shaping method thereof
04/21/2004CN1490268A Fibre-optical prefabricated bar processing apparatus by plasma technology