Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
05/2004
05/25/2004US6740856 Preformed heating element and method of making
05/25/2004US6740853 Multi-zone resistance heater
05/25/2004US6740842 Radio frequency power source for generating an inductively coupled plasma
05/25/2004US6740601 HDP-CVD deposition process for filling high aspect ratio gaps
05/25/2004US6740586 Vapor delivery system for solid precursors and method of using same
05/25/2004US6740585 Barrier formation using novel sputter deposition method with PVD, CVD, or ALD
05/25/2004US6740554 Methods to form rhodium-rich oxygen barriers
05/25/2004US6740420 Substrate having a modified native oxide layer for improved electrical conductivity
05/25/2004US6740416 Functional thin film formed uniformly on aerogel surface; layers can be infrared reflective film, optical wavequide, electroconductive, fluorescent; intermediate layer is copper phthalocyanine for electroconductive functional layer
05/25/2004US6740393 DLC coating system and process and apparatus for making coating system
05/25/2004US6740368 Beam shaped film pattern formation method
05/25/2004US6740367 Plasma CVD film-forming device
05/25/2004US6740166 Thin film deposition apparatus for semiconductor
05/25/2004CA2168871C Crystalline multilayer structure and manufacturing method thereof
05/21/2004WO2004042836A1 Thin film multilayer body, electronic device using such thin film multilayer body, actuator, and method for manufacturing actuator
05/21/2004WO2004042798A2 Apparatus and method for treating objects with radicals generated from plasma
05/21/2004WO2004042774A1 Methods and apparatus for generating high-density plasma
05/21/2004WO2004042487A1 Fluid treatment apparatus and fluid treatment method
05/21/2004WO2004042354A2 Methods for making metallocene compounds
05/21/2004WO2004042112A1 Cvd method using metal carbonyl gas
05/21/2004WO2004041832A2 Asymmetric group 8 (viii) metallocene compounds
05/21/2004WO2004041753A2 Deposition processes using group 8 (viii) metallocene precursors
05/21/2004WO2004041397A2 Preparation of asymmetric membranes using hot-filament chemical vapor deposition
05/21/2004WO2004031418A3 Method for manufacturing products by means of deformation at increased temperatures
05/21/2004WO2004030037A3 System for in-situ generation of fluorine radicals and/or fluorine-containing interhalogen (xfn) compounds for use in cleaning semiconductor processing chambers
05/21/2004WO2003095701A8 Volatile copper(ii) complexes for deposition of copper films by atomic layer deposition
05/20/2004US20040097100 Semiconductor integrated circuit device and production method thereof
05/20/2004US20040097098 Method for fabricating a semiconductor device
05/20/2004US20040097089 Device and control method for micro wave plasma processing
05/20/2004US20040097088 Conductor treating single-wafer type treating device and method for semi-conductor treating
05/20/2004US20040097063 Single wafer processing method and system for processing semiconductor
05/20/2004US20040097056 Process and device for the deposition of an at least partially crystalline silicium layer on a substrate
05/20/2004US20040096672 Multilayer integrated circuits; vapor deposition; exposure to ultraviolet radiation; forming porosity
05/20/2004US20040096593 Exposure to ultraviolet radiation in non-oxidizing environment; removal zones of material
05/20/2004US20040096583 Method for vacuum treatment of workpieces and vacuum treatment installation
05/20/2004US20040096582 Low temperature vapor deposition; using organosilicon compound; thin film semiconductor
05/20/2004US20040096571 Methods for forming a metal wiring layer on an integrated circuit device at reduced temperatures
05/20/2004US20040094840 Integrated circuit structure
05/20/2004US20040094813 Methods of forming dielectric materials and methods of processing semiconductor substrates
05/20/2004US20040094773 Dissimilar substrate having a first major surface offangled from a second major surface; nitride semiconductor layer in a lateral direction; and an active nitride semiconductor layer containing indium on the first nitride layer
05/20/2004US20040094206 Semiconductor manufacturing apparatus enabling inspection of mass flow controller maintaining connection thereto
05/20/2004US20040094094 Plasma processing device
05/20/2004US20040094093 Method and apparatus for providing and integrating a general metal delivery source (GMDS) with atomic layer deposition (ALD)
05/20/2004US20040094092 Apparatus for improved delivery of metastable species
05/20/2004US20040094091 Apparatus and method for manufacturing a semiconductor device having hemispherical grains
05/20/2004US20040094090 Liquid distribution unit for dividing a liquid current into a plurality of partial currents
05/19/2004EP1420461A2 Stacked photovoltaic device
05/19/2004EP1420439A2 Non-thermal process for forming porous low dielectric constant films
05/19/2004EP1420437A1 METHOD OF PRODUCING SEMICONDUCTOR THIN FILM, METHOD OF PRODUCING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT, ELECTROOPTICAL DEVICE AND ELECTRONIC APPARATUS
05/19/2004EP1420083A2 Method for depositing a surface coating comprising at least one thin, homogeneous layer of metal and carbon and corresponding surface coating
05/19/2004EP1420081A2 Thin film formation apparatus and thin film formation method employing the apparatus
05/19/2004EP1420080A2 Apparatus and method for hybrid chemical deposition processes
05/19/2004EP1420079A1 Film-forming system and film-forming method
05/19/2004EP1420024A1 Precursor for chemical vapor deposition and thin film formation process using the same
05/19/2004EP1419520A2 System and method for fast ambient gas switching in rapid thermal processing
05/19/2004EP1419287A1 Process for controlling thin film uniformity and products produced thereby
05/19/2004EP1419286A1 Coatings with low permeation of gases and vapors
05/19/2004EP1419282A2 Method for producing a fluorescent material layer
05/19/2004EP1419036A1 Cutting member with dual profile tip
05/19/2004EP1334222B1 Cvd reactor with graphite-foam insulated, tubular susceptor
05/19/2004DE10250564A1 Coating products, optics and automobile windows involves preparing substrate, coating with anti-reflective system, then coating with working layer to, e.g., resist scratches
05/19/2004CN1498285A Method for depositing coating having relatively high dielectric constant onto substrate
05/19/2004CN1498057A Induction coupling plasma generating equipment containing zigzag coil antenna
05/19/2004CN1497677A 半导体器件及其制造方法以及等离子加工装置 Semiconductor device and manufacturing method, and a plasma processing apparatus
05/19/2004CN1497676A Heating body CVD device and connecting structure between heating body and power supply mechanism in heating body CVD device
05/19/2004CN1497666A Fluoration thermal active for semiconductor working chamber
05/19/2004CN1497639A Manufacturing method of electronic transmitting element, electronic source and image forming device using carbon fibre, ink made of carbon fibre
05/19/2004CN1497628A Ceramic laminated body and its manufacturing method
05/19/2004CN1497614A Preparation method of high-temp. superconducting layer
05/19/2004CN1497147A Sliding structure for vehicle engine
05/19/2004CN1497067A Titanium product with improved corrosion resistant property
05/19/2004CN1497061A Purifying metod and chemical vapour-phase deposition deivce
05/19/2004CN1150624C Semiconductor integrated circuit device and method for manufacturing the same
05/19/2004CN1150348C CVD method of integrated Ta and TaN films from tantalum halide precursors
05/19/2004CN1150347C Tungsten carbide coating and method for producing the same
05/18/2004US6738683 Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor
05/18/2004US6737697 Having first and second tetraethyl orthosilicate-ozone films formed on protection film through chemical vapor deposition; second film has higher ozone concentration and lower water content as compared to first film
05/18/2004US6737693 Ferroelastic integrated circuit device
05/18/2004US6737666 Apparatus and method for detecting an end point of a cleaning process
05/18/2004US6737524 Activated polyethylene glycol compounds
05/18/2004US6737361 Method for H2 Recycling in semiconductor processing system
05/18/2004US6737123 Silicon-based film formation process, silicon-based film, semiconductor device, and silicon-based film formation system
05/18/2004US6737121 Multilayer article and method of making by arc plasma deposition
05/18/2004US6737110 Method for producing a heat insulating layer
05/18/2004US6736993 Silicon reagents and low temperature CVD method of forming silicon-containing gate dielectric materials using same
05/18/2004US6736931 Inductively coupled RF plasma reactor and plasma chamber enclosure structure therefor
05/18/2004US6736930 Microwave plasma processing apparatus for controlling a temperature of a wavelength reducing member
05/18/2004US6736901 Vertical chemical vapor deposition system
05/18/2004US6736894 Method of manufacturing compound single crystal
05/18/2004US6736636 Thermal processor with gas supply
05/18/2004US6736633 Burner manifold apparatus for use in a chemical vapor deposition process
05/18/2004US6736147 Semiconductor-processing device provided with a remote plasma source for self-cleaning
05/18/2004CA2250535C Coating substrate
05/18/2004CA2186587C Pcvd process and device for coating domed substrates
05/13/2004WO2004040642A1 Oxygen bridge structures and methods
05/13/2004WO2004040632A1 Heat treating system and heat treating method
05/13/2004WO2004040631A1 Plasma chemical vapor deposition method and plasma chemical vapor deposition device
05/13/2004WO2004040630A1 Method for manufacturing semiconductor device and substrate processing system
05/13/2004WO2004040629A1 Method and system for making uniform high frequency plasma over larger area in plasma-activated cvd system
05/13/2004WO2004039731A2 Nanostructures produced by phase-separation during growth of (iii-v)1-x(iv2)x alloys