Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
05/2004
05/13/2004WO2004019381A3 Barrier coatings produced by atmospheric glow discharge
05/13/2004WO2004019368A3 Reduced volume plasma reactor
05/13/2004WO2004010471A3 In-situ formation of metal insulator metal capacitors
05/13/2004WO2004008052A3 System and method for cooling a thermal processing apparatus
05/13/2004WO2004001809A8 Method for energy-assisted atomic layer deposition and removal
05/13/2004WO2003031679B1 Method for depositing metal layers employing sequential deposition techniques
05/13/2004US20040092132 Atomic layer deposition methods
05/13/2004US20040092101 Cu film deposition equipment of semiconductor device
05/13/2004US20040092096 Oxygen bridge structures and methods to form oxygen bridge structures
05/13/2004US20040092086 Film forming method and film forming device
05/13/2004US20040092073 Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
05/13/2004US20040092044 Ion current density measuring method and instrument, and semiconductor device manufacturing method
05/13/2004US20040092043 Semiconductor manufacturing method and semiconductor manufacturing apparatus
05/13/2004US20040092040 Interlock apparatus and method for supplying gas to a semiconductor manufacturing device
05/13/2004US20040091749 Method of making coated cemented carbide cutting tools
05/13/2004US20040091717 Nitrogen-free fluorine-doped silicate glass
05/13/2004US20040091638 Method and apparatus for performing laser CVD
05/13/2004US20040091637 Created between electrode and counterelectrode supporting substrate; mixture of balance gas and working gas flowed rapidly through electrode, plasma polymerized by corona discharge, deposited onto substrate as optically clear coat
05/13/2004US20040091636 Feeding a raw material gas containing a halogen into an inlet vessel having a perforated plate made of metal; converting the raw material gas into a plasma to generate a raw material gas plasma; etching the perforated plate; passing the precursor
05/13/2004US20040091630 Deposition of a solid by thermal decomposition of a gaseous substance in a cup reactor
05/13/2004US20040091612 For use in optical components
05/13/2004US20040089887 A new relatively high-k gate dielectric gate material comprising calcium oxide will reduce leakage from the silicon substrate to the polysilicon gate, prevent boron penetration in p-channel devices, and reduce electron trapping in the
05/13/2004US20040089836 Gate valve assembly
05/13/2004US20040089240 Chemical vapor deposition apparatus
05/13/2004US20040089237 Continuous chemical vapor deposition process and process furnace
05/13/2004US20040089235 Mixer, and device and method for manufacturing thin-film
05/13/2004US20040089233 Deposition methods utilizing microwave excitation
05/13/2004US20040089026 Precursor and method of growing doped glass films
05/13/2004DE19955288B4 Verfahren zum Herstellen von dotiertem polykristallinem Silicium für piezoresistive Anordnungen A process for the manufacture of doped polycrystalline silicon piezoresistive arrangements for
05/12/2004EP1418252A2 Multiphase thermal barrier coatings for very high temperature applications
05/12/2004EP1418208A2 Color shifting carbon-containing interference pigments
05/12/2004EP1417701A2 Methods of forming metal-comprising materials and capacitor electrodes; and capacitor constructions
05/12/2004EP1417158A2 Photoactive coating, coated article, and method of making same
05/12/2004EP1417042A2 Method for producing a coated synthetic body
05/12/2004EP1040210B1 Plasma polymerization on surface of material
05/12/2004EP1021586A4 A rapid thermal processing barrel reactor for processing substrates
05/12/2004EP1017266A4 System for delivering a substantially constant vapor flow to a chemical process reactor
05/12/2004EP0725767B2 Vapor phase chemical infiltration process of a material into a porous substrate at controlled surface temperature
05/12/2004CN1496584A Vapor growth method for metal oxide dielectric film and PZT film
05/12/2004CN1496583A Heat treatment apparatus
05/12/2004CN1496582A Heat treating method and heat treating device
05/12/2004CN1495892A Distribution-containing structure and forming method thereof
05/12/2004CN1495867A Bismuth titanium silicon oxide, bismuth titanium silicon oxide film and preparation method of said film
05/12/2004CN1495848A Method for mfg. crystal semiconductor material and method for mfg. semiconductor
05/12/2004CN1495708A Thin-film magnetic lead, method for generating said film and magnetic disk using said film
05/12/2004CN1495286A PLasma enhanced chemical deposition method of low vapor-prossure compound
05/12/2004CN1495285A Chemical vapour phase deposition coating coating equipment
05/12/2004CN1495283A Matching box, vacuum device using the same and vacuum processing method
05/12/2004CN1149644C Method for filling groove on workpiece surface using conducing material
05/12/2004CN1149640C Semiconductor thin film and thin film device
05/12/2004CN1149304C Method of coating and annealing large area glass substrates
05/11/2004US6734558 Electronic devices with barium barrier film and process for making same
05/11/2004US6734480 Semiconductor capacitors having tantalum oxide layers
05/11/2004US6734119 Electro-optical apparatus and method for fabricating a film, semiconductor device and memory device at near atmospheric pressure
05/11/2004US6734115 Oxidizing silicon compounds with oxygen containing compound at a constant rf power level; electrodeposition
05/11/2004US6734102 Plasma treatment for copper oxide reduction
05/11/2004US6734086 Semiconductor integrated circuit device and method of manufacturing the same
05/11/2004US6734051 Plasma enhanced chemical vapor deposition methods of forming titanium silicide comprising layers over a plurality of semiconductor substrates
05/11/2004US6734030 Semiconductor light emitting device and method of fabricating semiconductor light emitting device
05/11/2004US6734020 Valve control system for atomic layer deposition chamber
05/11/2004US6733874 Surface-coated carbide alloy cutting tool
05/11/2004US6733848 Thin film forming equipment and method
05/11/2004US6733830 Vapor deposited film
05/11/2004US6733624 Apparatus for holding an object to be processed
05/11/2004US6733617 Direct detection of dielectric etch system magnet driver and coil malfunctions
05/11/2004US6733593 Film forming device
05/06/2004WO2004038783A2 Pecvd of organosilicate thin films
05/06/2004WO2004038782A1 Semiconductor device and process for producing the same
05/06/2004WO2004038774A2 Method for producing semi-conducting devices and devices obtained with this method
05/06/2004WO2004038061A1 Substrate having multilayer film and method for manufacturing the same
05/06/2004WO2004017378A3 Atomic layer deposition of high k metal silicates
05/06/2004WO2004013376A3 Titania coatings by plasma cvd at atmospheric pressure
05/06/2004US20040088052 Used for a prosthesis; diamon-like-coatings/ion implantation
05/06/2004US20040087179 Method for forming integrated dielectric layers
05/06/2004US20040087168 Method and apparatus for supporting a semiconductor wafer during processing
05/06/2004US20040087154 System architecture of semiconductor manufacturing equipment
05/06/2004US20040087143 Process for atomic layer deposition of metal films
05/06/2004US20040087139 Nitrogen-free antireflective coating for use with photolithographic patterning
05/06/2004US20040087122 Adhesion enhancement between CVD dielectric and spin-on low-k silicate films
05/06/2004US20040086725 Obtaining silicone oxide coatings by means of vapor-depositing a silicon oxide coating onto each side of the substrate film by a plasma chemical vapour deposition (PECVD) while straining the film
05/06/2004US20040086689 Island projection-modified part, method for producing the same, and apparatus comprising the same
05/06/2004US20040086643 Precursor for chemical vapor deposition and thin film formation process using the same
05/06/2004US20040086642 Method and apparatus for feeding gas phase reactant into a reaction chamber
05/06/2004US20040086641 Suitable for mass production which repeatedly uses a large amount of a source gas for many hours
05/06/2004US20040086640 Placing a substrate in a deposition chamber; forming silicon comprising film above substrate wherein one of reactant species for forming film includes a hexachlorodisilane (HCD) source gas and wherein chamber is pressurized
05/06/2004US20040086434 Down-stream radical generation by employing a source of electromagnetic excitation such as plasma source (RF or microwave) that can be pulsed to generate radicals from plasma
05/06/2004US20040086430 Residual oxygen reduction system
05/06/2004US20040085023 Methods and apparatus for generating high-density plasma
05/06/2004US20040084709 Capacitor having a cylindrical (or concave) structure to overcome a difficulty in etching a lower electrode as the height of a 3-dimensionally stacked capacitor increases
05/06/2004US20040084153 Plasma source assembly and method of manufacture
05/06/2004US20040084149 Bubbler for substrate processing
05/06/2004US20040084147 Valve assemblies for use with a reactive precursor in semiconductor processing
05/06/2004US20040083976 Modified deposition ring to eliminate backside and wafer edge coating
05/06/2004US20040083975 Apparatus for reducing polymer deposition on a substrate and substrate support
05/06/2004US20040083974 Hermetically-evacuated reaction vessel, substrate holders, gas source supply , and a high-frequency power supply; an end covering provided at an end of each of the substrate holders, the the source gas supply and the power supply; quality
05/06/2004US20040083973 Film forming method and film forming device
05/06/2004US20040083972 Gas delivery system for deposition processes, and methods of using same
05/06/2004US20040083970 Vacuum processing device
05/06/2004US20040083968 Apparatus for performing at least one process on a substrate
05/06/2004US20040083967 Plasma CVD apparatus for large area CVD film