Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
05/2004
05/06/2004US20040083965 Vapor delivery system for solid precursors and method of using same
05/06/2004US20040083964 Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill
05/06/2004US20040083963 Method and apparatus for delivering precursors
05/06/2004US20040083962 Clog-resistant gas delivery system
05/06/2004US20040083961 Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices
05/06/2004US20040083960 Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
05/06/2004US20040083959 Chemical vapor deposition apparatuses and deposition methods
05/06/2004US20040083951 Atomic layer deposition with point of use generated reactive gas species
05/06/2004US20040083949 Sequential chemical vapor deposition
05/06/2004US20040083787 Method of monitoring evaporation rate of source material in a container
05/06/2004US20040083588 Materials handling of semiconductor manufacturing, controlling the pressure, monitoring the gas flow, reducing the gas speed between the exhausting gas and purge gas
05/06/2004EP1416521A2 Manufacturing method of semiconductor device
05/06/2004EP1416520A1 Heating apparatus with electrostatic attraction function and method for producing it
05/06/2004EP1415332A2 Method and device for the production of thin epiatctic semiconductor layers
05/06/2004EP1415329A2 Method and apparatus for vacuum pumping a susceptor shaft
05/06/2004EP1415321A1 Device for the coating of objects
05/06/2004EP1415018A1 Composite material made from a substrate material and a barrier layer material
05/06/2004EP1415017A1 Rotating susceptor and method of processing substrates
05/06/2004EP1415016A1 Electrochemically roughened aluminum semiconductor processing apparatus surfaces
05/06/2004EP1415015A1 Method and device for the coating and blow moulding of a body
05/06/2004EP1415014A1 Method for making diamond-coated composite materials
05/06/2004EP1415013A1 Rapid cycle chamber having a top vent with nitrogen purge
05/06/2004EP1290239B1 Bearing with amorphous boron carbide coating
05/06/2004EP1133652B1 Manifold system of removable components for distribution of fluids
05/06/2004EP0981656A4 Low resistivity w using b 2?h 6?
05/06/2004EP0954621A4 Method and apparatus for reducing deposition of material in the exhaust pipe of a reaction furnace
05/06/2004DE19952316B4 Verfahren zum Herstellen einer Gateisolierung und einer Trennisolierung in einem Dünnfilmtransistor A method for forming a gate insulation and a release isolation in a thin film transistor
05/06/2004DE19937513B4 Vorrichtungen und Verfahren zur gleichverteilten Gasinjektion bei der Behandlung von Halbleitersubstraten Devices and methods for uniformly distributed gas injection in the treatment of semiconductor substrates,
05/06/2004DE10248980A1 Production of structured silicon dioxide layers on process surfaces comprises preparing a substrate with a relief , forming a starter layer on sections of the process surfaces, and applying tris(tert-butoxy)silanol
05/06/2004DE10248962A1 Production of a high temperature superconductor layer on a substrate for use in high energy applications comprises depositing a superconducting layer with a low growth rate
05/06/2004DE10221461B4 Vorrichtung und Verwendung einer Vorrichtung zum Aufnehmen und Vakuumabdichten eines Behältnisses mit einer Öffnung A device and use of a device for receiving and vacuum-sealing of a container with an opening
05/05/2004CN1494738A Heat treating device
05/05/2004CN1494604A Method for producing parts and vacuum processing system
05/05/2004CN1493721A Carbon fiber mfg. method and its use, and ink for producing catalyst
05/05/2004CN1493539A Preparation method of photo catalytic activation self cleaning product
05/05/2004CN1148786C Foreign-body elminating method, film forming method
05/05/2004CN1148563C Method and apparatus for in-situ monitoring of plasma etch and deposition processes using pulsed broadband light source
05/04/2004US6731386 Measurement technique for ultra-thin oxides
05/04/2004US6730954 Method of depositing tungsten nitride using a source gas comprising silicon
05/04/2004US6730885 Batch type heat treatment system, method for controlling same, and heat treatment method
05/04/2004US6730619 Method of manufacturing insulating layer and semiconductor device including insulating layer
05/04/2004US6730614 Method of forming a thin film in a semiconductor device
05/04/2004US6730613 Method for reducing by-product deposition in wafer processing equipment
05/04/2004US6730598 Integration of annealing capability into metal deposition or CMP tool
05/04/2004US6730593 Method of depositing a low K dielectric with organo silane
05/04/2004US6730523 Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices
05/04/2004US6730369 Using electron cyclotron resonance; bent waveguide maintaining constant relative positioning
05/04/2004US6730368 Method of preparing a poly-crystalline silicon film
05/04/2004US6730367 Epitaxy; purge gas is prevented from mixing of the precursor and input gases, and electromagnetic/ultraviolet radiation is directed to the input gas to create high flux for surface treatment
05/04/2004US6730364 Preparation of carbon molecular sieve membranes on porous substrate
05/04/2004US6730355 Comprises reacting titanium chloride and silane
05/04/2004US6730354 Thin films; vapor deposition
05/04/2004US6730175 Ceramic substrate support
05/04/2004US6730164 Systems and methods for forming strontium- and/or barium-containing layers
05/04/2004US6730163 Aluminum-containing material and atomic layer deposition methods
05/04/2004US6729875 Susceptor pocket profile to improve process performance
05/04/2004US6729353 Modular fluid delivery apparatus
05/04/2004US6729261 Plasma processing apparatus
04/2004
04/29/2004WO2004036651A1 Semiconductor ferroelectric storage device and its manufacturing method
04/29/2004WO2004036640A1 Method of forming dielectric film
04/29/2004WO2004036634A1 Thin film forming apparatus and thin film forming method and thin film forming system
04/29/2004WO2004036631A2 Silicon-containing layer deposition with silicon compounds
04/29/2004WO2004036624A2 Two-step atomic layer deposition of copper layers
04/29/2004WO2004035878A1 Hydride vpe reactor
04/29/2004WO2004035859A1 Apparatus and method for depositing an oxide film
04/29/2004WO2004035858A2 Atomic layer deposition of noble metals
04/29/2004WO2004035854A2 Method and apparatus for processing substrates
04/29/2004WO2004035496A2 Article having nano-scaled structures and a process for making such article
04/29/2004WO2004035323A1 Method for producing a mark on a substrate surface, in particular made of optical or ophthalmic glass
04/29/2004WO2004035307A1 Film multilayer body and flexible circuit board
04/29/2004WO2004010466A3 Metal organic chemical vapor deposition and atomic layer deposition of metal oxynitride and metal silicon oxynitride
04/29/2004WO2004007794A3 Pulsed nucleation deposition of tungsten layers
04/29/2004WO2004007792A3 Method of film deposition using activated precursor gases
04/29/2004WO2003100118A3 Method and device for treating workpieces
04/29/2004WO2003088327A3 Deposition of silicon layers for active matrix liquid crystal displays
04/29/2004WO1992002662A3 Process for forming crack-free pyrolytic boron nitride on a carbon structure and article
04/29/2004US20040082251 Apparatus for adjustable gas distribution for semiconductor substrate processing
04/29/2004US20040082199 Plasma processes for depositing low dielectric constant films
04/29/2004US20040082193 Plasma enhanced cvd low k carbon-doped silicon oxide film deposition using vhf-rf power
04/29/2004US20040082171 ALD apparatus and ALD method for manufacturing semiconductor device
04/29/2004US20040082169 Deposition of barrier metal in damascene interconnects using metal carbonyl
04/29/2004US20040082126 Semiconductor device incorporated therein high K capacitor dielectric and method for the manufacture thereof
04/29/2004US20040082097 Thin-film solar cells and method of making
04/29/2004US20040081833 Process for depositing a tungsten-based and/or molybdenum-based layer on a rigid substrate, and substrate thus coated
04/29/2004US20040081824 Oxide coated cutting tool
04/29/2004US20040081758 On support by catalytically depositing carbon out of vapor phase; catalyst layer deposited without current based on nickel or cobalt is applied to support, thermally activated before depositing carbon out of vapor phase
04/29/2004US20040081757 Substrate treatment device, substrate treatment method, and cleaning method for substrate treatment device
04/29/2004US20040081754 Where, even in cases of relatively large batch sizes, only slight fluctuations in layer properties between two wafers are observed or in which fluctuations in layer thickness of a layer deposited on a semiconductor substrate can be reduced
04/29/2004US20040081747 Method for manufacture of a solar cell
04/29/2004US20040081607 Exhaust aperture; trap
04/29/2004US20040079964 Semiconductor element
04/29/2004US20040079728 Reactive ion etching for semiconductor device feature topography modification
04/29/2004US20040079632 High density plasma CVD process for gapfill into high aspect ratio features
04/29/2004US20040079485 Inductively coupled plasma generating apparatus incorporating serpentine coil antenna
04/29/2004US20040079484 Method and apparatus for gas injection system with minimum particulate contamination
04/29/2004US20040079385 Method for removing particles from a semiconductor processing tool
04/29/2004US20040079286 Method and apparatus for the pulse-wise supply of a vaporized liquid reactant
04/29/2004US20040079118 Method of forming a phosphorus doped optical core using a PECVD process
04/29/2004DE19509284B4 Vorrichtung zur Erzeugung eines ebenen Plasmas unter Verwendung variierender Magnetpole A device for generating a planar plasma using varying magnetic poles
04/29/2004DE10130936B4 Herstellungsverfahren für ein Halbleiterbauelement mittels Atomschichtabscheidung/ALD Manufacturing method of a semiconductor device by means of atomic layer deposition / ALD