Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
06/2004
06/22/2004US6753506 System and method of fast ambient switching for rapid thermal processing
06/22/2004US6753496 Plasma processing apparatus
06/22/2004US6753437 Tris(2,4-octanedionato) iridium
06/22/2004US6753272 High-performance energy transfer method for thermal processing applications
06/22/2004US6753271 Atomic layer deposition methods
06/22/2004US6753255 Process for wafer edge profile control using gas flow control ring
06/22/2004US6753245 Vapor deposition of an organometallic compound; forming silicide
06/22/2004US6753123 Source gas is decomposed by the use of a high-frequency power in a rector to deposit sequentially on a conductive substrate i) a photoconductive layer comprised of an amorphous material composed chiefly of silicon atoms and ii) a surface layer
06/22/2004US6752899 Acoustic microbalance for in-situ deposition process monitoring and control
06/22/2004US6752874 Apparatus for perpendicular-type ultra vacuum chemical vapor deposition
06/22/2004US6752869 Forming metal oxides at low temperature; adsorption, oxidation
06/22/2004US6752387 Stable control over range of flow rates; heated valve for total gasification
06/22/2004CA2268602C Method for making long-life electroluminescent phosphor
06/17/2004WO2004052060A1 Method and device for microwave plasma deposition of a coating on a thermoplastic container surface
06/17/2004WO2004051702A2 Apparatus for treating surfaces of a substrate with atmospheric pressure plasma
06/17/2004WO2004051139A1 Raw solution feeding system for vaporizer and method of cleaning the raw solution feeding system
06/17/2004WO2004050948A1 Film-forming method and apparatus using plasma cvd
06/17/2004WO2004050947A1 Ruthenium compound and process for producing metallic ruthenium film
06/17/2004WO2004050943A2 Method for the treatment of surfaces with plasma in a vacuum and unit for the same
06/17/2004WO2004050938A2 Micromachines for delivering precursors and gases for film deposition
06/17/2004WO2004050936A2 Method for cleaning a process chamber
06/17/2004WO2004023508A3 Accessory member for dispensers of alkali metals
06/17/2004WO2004020689A3 Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides
06/17/2004WO2003005396A9 Method and apparatus for scanned instrument calibration
06/17/2004US20040115954 Cvd of porous dielectric materials
06/17/2004US20040115951 Cleaning method for substrate treatment device and substrate treatment device
06/17/2004US20040115938 Method for producing a chalcogenide-semiconductor layer of the abc2 type with optical process monitoring
06/17/2004US20040115937 Production method for semiconductor substrate and semiconductor element
06/17/2004US20040115936 Remote ICP torch for semiconductor processing
06/17/2004US20040115898 Deposition process for high aspect ratio trenches
06/17/2004US20040115883 Memory film, method of manufacturing the memory film, memory element, semiconductor storage device, semiconductor integrated circuit, and portable electronic equipment
06/17/2004US20040115876 Method of manufacturing silicon carbide film
06/17/2004US20040115585 Heat treating device
06/17/2004US20040115584 Conveying container; supplying gas and replacement gas; controlling opening and closing; reducing pressure; discharging
06/17/2004US20040115445 Laminated body
06/17/2004US20040115434 Cutting tool coated with diamond
06/17/2004US20040115410 forming the inner layer of a ceramic containing yettria stabilized zirconia as a heat resistance layer, then forming the outer layer of tantalum oxide over the inner layer
06/17/2004US20040115402 Apparatus and method for depositing large area coatings on non-planar surfaces
06/17/2004US20040115365 Plasma vapor deposition using high density plasma generated in presence of magnetic field
06/17/2004US20040115364 Method for the production of a functional coating by means of high-frequency plasma beam source
06/17/2004US20040115349 Film forming method and film forming device
06/17/2004US20040115348 Coating with a preceramic polymer fabric ply formed of ceramic fibers coated with a high temperature boron nitride;shaping fabric ply into a preliminary preform;curing polymer inserting preform into a reactor for a chemical vapor infiltration
06/17/2004US20040115342 For depositing a thin film
06/17/2004US20040115103 Preventing equipment damage; glass bursts releasing fumes into environment when excess volume is too large to vent through safety valve
06/17/2004US20040115032 Apparatus for vacuum treating two dimensionally extended substrates and method for manufacturing such substrates
06/17/2004US20040114900 Deposition of thick BPSG layers as upper and lower cladding for optoelectronics applications
06/17/2004US20040113289 Carburetor, various types of devices using the carburetor, and method of vaporization
06/17/2004US20040113287 Anode, cathode of electrolytic cells; thickness distribution in grained pattern ; heat resistance, electroconductivity
06/17/2004US20040113195 Precursor for hafnium oxide layer and method for forming halnium oxide film using the precursor
06/17/2004US20040113093 System for and method of gas cluster ion beam processing
06/17/2004US20040113080 Sampling zone, ifnrared light source, controller
06/17/2004US20040112864 Plasma treatment method and plasma treatment apparatus
06/17/2004US20040112863 Method of enhancing surface reactions by local resonant heating
06/17/2004US20040112756 Using copper perfluoro(imidosulfonyl or sulfonyl) compound
06/17/2004US20040112537 Plasma treatment apparatus and method for plasma treatment
06/17/2004US20040112293 Semiconductor device production apparatus, and semiconductor device production method employing the same
06/17/2004US20040112290 Apparatus for forming film in semiconductor process and method for feeding gas into the same apparatus
06/17/2004US20040112289 Thin-film deposition apparatus and method for rapidly switching supply of source gases
06/17/2004US20040112288 Gas injectors for a vertical furnace used in semiconductor processing
06/17/2004DE10327618A1 Verfahren zur Ausbildung von Aluminiummetallverdrahtungen Process for the formation of aluminum metal wirings
06/17/2004DE10259376A1 Halbleiterherstellungsvorrichtung A semiconductor manufacturing apparatus
06/17/2004DE10255988A1 Verfahren zum Reinigen einer Prozesskammer A method of cleaning a process chamber
06/16/2004EP1428907A1 Thermal activation of gas for use in a semiconductor process chamber
06/16/2004EP1428906A1 Low dielectric constant material and method of processing by CVD
06/16/2004EP1428253A1 Plasma curing process for porous low-k materials
06/16/2004EP1428049A1 Optical and optoelectronic articles
06/16/2004EP1427868A2 Vaporizer
06/16/2004EP1251975B1 Protective and/or diffusion barrier layer
06/16/2004EP1222316B1 Coated cemented carbide insert
06/16/2004EP1218557B1 Coated grooving or parting insert
06/16/2004EP1125321A4 Chemical deposition reactor and method of forming a thin film using the same
06/16/2004EP1097252A4 Multi-position load lock chamber
06/16/2004EP1057207B1 Rf powered plasma enhanced chemical vapor deposition reactor and methods
06/16/2004EP1040292A4 Gas panel
06/16/2004EP0946783B1 Semiconducting devices and method of making thereof
06/16/2004CN1505695A Cerium oxide containing ceramic components and coatings in semiconductor processing equipment
06/16/2004CN1505694A Use of perfluoroketones as vapor reactor cleaning, etching, and doping gases
06/16/2004CN1505693A Use of fluorinated ketones as wet cleaning agents for vapor reactors
06/16/2004CN1505118A Semiconductor manufacturing system
06/16/2004CN1504591A Composite diamond material by chemical vapour depositing diamond and polycrystal diamond and application thereof
06/16/2004CN1504584A Laser strengthening and toughening method for interface between ground-mass and coating
06/16/2004CN1504408A Array structure of nm-class carbon tubes and its preparing process
06/16/2004CN1504268A Composite material with ornamental appearance and functional layer and its preparation method
06/16/2004CN1154163C Process for preparing SiO2 medium film on micron-class strip mesa
06/15/2004US6751022 Color shifting carbon-containing interference pigments and foils
06/15/2004US6750977 Apparatus for monitoring thickness of deposited layer in reactor and dry processing method
06/15/2004US6750474 Semiconducting devices and method of making thereof
06/15/2004US6750155 Methods to minimize moisture condensation over a substrate in a rapid cycle chamber
06/15/2004US6750120 Method and apparatus for MOCVD growth of compounds including GaAsN alloys using an ammonia precursor with a catalyst
06/15/2004US6750119 Low temperature growth technique is described for incorporating carbon epitaxially into si and sige with very abrupt and well defined junctions, without any associated oxygen background contamination.
06/15/2004US6750110 Continuous good step coverage CVD platinum metal deposition
06/15/2004US6750092 Methods of forming ruthenium film by changing process conditions during chemical vapor deposition and ruthenium films formed thereby
06/15/2004US6749957 Method for fabricating a III nitride film, substrate for epitaxial growth, III nitride film, epitaxial growth substrate for III nitride element and III nitride element
06/15/2004US6749931 Diamond foam material and method for forming same
06/15/2004US6749930 Corrosion-resistive members
06/15/2004US6749900 Method and apparatus for low-pressure pulsed coating
06/15/2004US6749893 Thick tensile stress layer is deposited on the back side of the wafer just prior to performing a high temperature thermal treatment above about 600 degrees c. on cladding layer to prevent the cracking of layers
06/15/2004US6749824 Alternating current with fixed or variable high frequency in of 2-800 khz to concentrate >/= 70% of the current in an annular region for a skin effect
06/15/2004US6749819 Process for purifying ammonia
06/15/2004US6749813 Fluid handling devices with diamond-like films