Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
07/2004
07/08/2004WO2004010469A3 Atomic layer deposition of multi-metallic precursors
07/08/2004WO2003023880A8 Thin-film electrochemical devices on fibrous or ribbon-like substrates and method for their manufacture and design
07/08/2004WO2002065516A8 Improved process for deposition of semiconductor films
07/08/2004US20040133361 Method for CVD process control for enhancing device performance
07/08/2004US20040132313 Method for production of a metallic or metal-containing layer
07/08/2004US20040132298 Apparatus for fabricating a III-V nitride film
07/08/2004US20040131796 Method of fabricating a protective film by use of vacuum ultraviolet rays
07/08/2004US20040131773 Separate solution feeds of rare earth, barium and copper tetramethyl heptanedionate solutions; metal orgainc chemical vapor deposition; low cost, rapid, high throughput, simple reagent refill
07/08/2004US20040131767 Method for producing a fluorescent material layer
07/08/2004US20040130238 Composite material, for the production thereof and its use
07/08/2004US20040130031 modifying carborane material to enable it to be deposited by chemical vapor deposition; used as a semiconductor
07/08/2004US20040130029 Conformal lining layers for damascene metallization
07/08/2004US20040129968 diffusion barrier layer comprising ternary compound elements formed on a substrate comprising ruthenium, titanium and nitrogen; capacitor comprising a bottom electrode formed on oxygen diffusion barrier layer; dielectric layer
07/08/2004US20040129671 Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
07/08/2004US20040129385 Pre-loaded plasma reactor apparatus and application thereof
07/08/2004US20040129351 Method and system for fabricating three-diemensional microstructure
07/08/2004US20040129224 Cooling mechanism with coolant, and treatment device with cooling mechanism
07/08/2004US20040129223 Apparatus and method for manufacturing silicon nanodot film for light emission
07/08/2004US20040129221 Cooled deposition baffle in high density plasma semiconductor processing
07/08/2004US20040129220 Plasma processing method and apparatus
07/08/2004US20040129219 Atomic layer deposition apparatus and method
07/08/2004US20040129218 Exhaust ring mechanism and plasma processing apparatus using the same
07/08/2004US20040129215 Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates
07/08/2004US20040129213 Chemical vapor deposition reactor
07/08/2004US20040129212 Apparatus and method for delivery of reactive chemical precursors to the surface to be treated
07/08/2004US20040129211 Tunable gas distribution plate assembly
07/08/2004US20040129210 Gas nozzle for substrate processing chamber
07/08/2004US20040129204 Chemical vapor deposition using organometallic precursors
07/08/2004US20040129203 Silicon tube formed of bonded staves
07/08/2004DE4417626B4 Einrichtung und Verfahren zum Herstellen eines Halbleiters Apparatus and method for manufacturing a semiconductor
07/08/2004DE10358909A1 Plasma-CVD-Vorrichtung sowie Filmherstellverfahren und Verfahren zur Herstellung eines Halbleiterbauteils unter Verwendung derselben Plasma CVD apparatus and Filmherstellverfahren and method for producing a semiconductor device using the same
07/08/2004DE10259174A1 Tribologisch beanspruchtes Bauelement und Gasmotor oder Verbrennungsmotor damit Tribologically claimed device and gas engine or engine so
07/08/2004DE10258678A1 Process for applying alternating layers e.g. barrier layers onto a plastic bottle by chemical gas phase deposition comprises depositing an organic adhesion promoting layer on a substrate and applying an inorganic barrier layer
07/08/2004DE10258560A1 Verfahren und Vorrichtung zum CVD-Beschichten von Werkstücken Method and apparatus for CVD coating of workpieces
07/08/2004DE10258282A1 CVD-Beschichtungsverfarhen für ZrBx CyNz-Schichten (x+y+z = 1) sowie beschichtetes Schneidwerkzeug CVD Beschichtungsverfarhen for ZrBx CyNz layers (x + y + z = 1) and coated cutting tool
07/08/2004DE10257628A1 Coating process for coating e.g. turbine blades comprises placing a mixture of an organometallic precursor and an inert powder in a hollow body to be coated, and heating to a temperature at which the precursor vaporizes and decomposes
07/07/2004EP1435652A1 Silicon monocrystal wafer processing device, and method of manufacturing silicon monocrystal wafer and silicon epitaxial wafer
07/07/2004EP1435401A1 Island coated part, method for producing the same, and apparatus comprising the same
07/07/2004EP1435106A2 Lifting and supporting device
07/07/2004EP1434898A1 Methods for the production of components and ultra high vacuum cvd reactor
07/07/2004EP1434897A1 Method and device for depositing a plurality of layers on a substrate
07/07/2004EP1434896A2 Multi-chamber installation for treating objects under vacuum, method for evacuating said installation and evacuation system therefor
07/07/2004CN1511339A Ultraviolet ray assisted processing deivce for semiconductor processing
07/07/2004CN1511244A Heating medium circulating device and thermal treatment equipment usint the device
07/07/2004CN1511198A Method and installation for densification of substrates by means of chemical vapour infiltration
07/07/2004CN1510163A Container internal surface chemical vapor depositon coating method
07/07/2004CN1510162A Method for depositing metal oxide thin film by MOCVD
07/07/2004CN1156604C High density plasma CVD process for making dielectric anti-refletive coatings
07/07/2004CN1156603C Large area plasma source
07/07/2004CN1156602C Heating method for preparing metal substrate film
07/07/2004CN1156598C PCVD plasma impregnation comsite reinforced method for precise vane hot forging die
07/06/2004US6759705 Platinum-rhodium stack as an oxygen barrier in an integrated circuit capacitor
07/06/2004US6759633 Heat treating device
07/06/2004US6759347 Method of forming in-situ SRO HDP-CVD barrier film
07/06/2004US6759346 Method of forming dielectric layers
07/06/2004US6759344 Method for forming low dielectric constant interlayer insulation film
07/06/2004US6759327 Method of depositing low k barrier layers
07/06/2004US6759323 Method for filling depressions in a surface of a semiconductor structure, and a semiconductor structure filled in this way
07/06/2004US6759253 Process monitoring methods in a plasma processing apparatus, monitoring units, and a sample processing method using the monitoring units
07/06/2004US6759250 Deposition method for lead germanate ferroelectric structure with multi-layered electrode
07/06/2004US6759100 Layer formation method, and substrate with a layer formed by the method
07/06/2004US6759081 Filling of the read head gaps with aluminum oxide or aluminum nitride.
07/06/2004US6759018 Method for point-of-use treatment of effluent gas streams
07/06/2004US6758911 Apparatus and process of improving atomic layer deposition chamber performance
07/06/2004US6758909 Gas port sealing for CVD/CVI furnace hearth plates
07/06/2004US6758900 Micro three-dimensional structure, production method therefor and production device therefor
07/06/2004US6758662 Die for die compacting of powdered material
07/06/2004US6758591 Mixing of materials in an integrated circuit manufacturing equipment
07/06/2004US6758224 Chemical vapor deposition (cvd); generating active seeds of cleaning gas by applying high-frequency electric power to plasma-generator, feeding the active species into the processing space through holes in the partition plate
07/06/2004CA2362214C Method of regulating a high temperature gaseous phase process and use of said method
07/06/2004CA2270571C Composite article with adherent cvd diamond coating and method of making
07/06/2004CA2240987C Reactor having an array of heating filaments and a filament force regulator
07/01/2004WO2004055874A1 Method for producing silicon epitaxial wafer
07/01/2004WO2004055873A1 Thin film forming apparatus
07/01/2004WO2004055236A1 Cvd process to deposit aluminum oxide coatings
07/01/2004WO2004055235A1 Method for chemical vapour deposition (cvd) of zrbxcynz (or x+y+z=1) layers and a cutting tool coated with said layer
07/01/2004WO2004055234A1 Method for forming film
07/01/2004WO2004055227A2 Method and device for the cvd coating of workpieces
07/01/2004WO2004054893A1 Packaging material
07/01/2004WO2004035854A3 Method and apparatus for processing substrates
07/01/2004WO2004017377A3 Atomic layer deposition of high k metal oxides
07/01/2004WO2004001817A9 Transfer chamber for vacuum processing system
07/01/2004US20040127732 Methods for making metallocene compounds
07/01/2004US20040127697 arylisothiocyanate compounds useful for activating alcohol-containing macromolecules, for example polyethyleneglycols and cellulose, for covalent linkage to amino-groups of biomolecules such as antibodies, enzymes, and proteins
07/01/2004US20040127070 Additives to prevent degradation of alkyl-hydrogen siloxanes
07/01/2004US20040127069 Deposition of silane and nitrogen in a plasma reactor onto a workkpiece; field-effect transistors
07/01/2004US20040127067 Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
07/01/2004US20040127060 Deliberate semiconductor film variation to compensate for radial processing differences, determine optimal device characteristics, or produce small productions
07/01/2004US20040127059 Clean gas injector system for reactor chamber
07/01/2004US20040127042 Compound crystal and method of manufacturing same
07/01/2004US20040127019 Film forming method and film forming apparatus
07/01/2004US20040126983 Method for forming capacitor in semiconductor device
07/01/2004US20040126980 Method of fabricating capacitor with hafnium
07/01/2004US20040126954 Deposition methods with time spaced and time abutting precursor pulses
07/01/2004US20040126649 Simple procedure for growing highly-ordered nanofibers by self-catalytic growth
07/01/2004US20040126614 Fluoride-containing coating and coated member
07/01/2004US20040126596 Plasma-deposited coatings, devices and methods
07/01/2004US20040126493 a conductive member is between the electrode and the substrate holder to cover the entire space between them, and electrically connected to both
07/01/2004US20040126485 Deposition processes using Group 8 (VIII) metallocene precursors
07/01/2004US20040126482 Method and structure for selective surface passivation