Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
07/2004
07/29/2004US20040144770 Method and device for vacuum treatment
07/29/2004US20040144490 Method and apparatus for cleaning a CVD chamber
07/29/2004US20040144489 Semiconductor processing device provided with a remote plasma source for self-cleaning
07/29/2004US20040144400 Semiconductor processing with a remote plasma source for self-cleaning
07/29/2004US20040144335 Tribologically loaded component and accompanying gas engine or internal combustion engine
07/29/2004US20040144323 Epitaxial wafer production apparatus and susceptor structure
07/29/2004US20040144322 Semiconductor or liquid crystal producing device
07/29/2004US20040144320 Method for cleaning reaction container and film deposition system
07/29/2004US20040144318 Device for ceramic-type coating of a substrate
07/29/2004US20040144315 Semiconductor substrate processing chamber and accessory attachment interfacial structure
07/29/2004US20040144314 Plasma reactor including helical electrodes
07/29/2004US20040144313 Incorporation of an impurity into a thin film
07/29/2004US20040144312 Cleaning a polishing pad surface subsequent to chemical-mechanical polishing a wafer surface of copper; applying a cleaning composition ofethylenediamine, an acid to bring the pH from about 8 to about 11; and deionized water; reducing polishing defects in semiconductor wafers
07/29/2004US20040144311 Apparatus and method for hybrid chemical processing
07/29/2004US20040144310 CVD apparatuses and methods of forming a layer over a semiconductor substrate
07/29/2004US20040144309 Reciprocating gas valve for pulsing a gas
07/29/2004US20040144308 Membrane gas valve for pulsing a gas
07/29/2004US20040144302 Oxide coated cutting tool
07/29/2004DE10301949A1 CVD reactor for producing a silicon carbide single crystalline layer comprises a reaction chamber, a susceptor arranged in the reaction chamber, and a gas inlet with a diffuser and a homogenizing unit
07/28/2004EP1441241A1 Process for interferential colouring of metal objects using a carbon plasma jet
07/28/2004EP1441043A2 Supply of gas to semiconductor process chamber
07/28/2004EP1441042A1 Precursors for depositing silicon containing films and processes thereof
07/28/2004EP1440450A2 Superhard dielectric compounds and methods of preparation
07/28/2004EP1440180A1 Method and device for depositing especially crystalline layers onto especially crystalline substrates
07/28/2004EP1440179A1 Chemical vapor deposition system
07/28/2004EP1212785A4 Apparatus for forming polymer continuously on the surface of metal by dc plasma polymerization
07/28/2004EP0983791B1 Method and apparatus for recovering a noble gas
07/28/2004CN1516895A Barrier enhancement process for copper interconnects
07/28/2004CN1516892A Cleaning gas and etching gas
07/28/2004CN1516891A Doped silicon deposition process in resistively heated single wafer chamber
07/28/2004CN1516750A 等离子cvd装置 Plasma cvd means
07/28/2004CN1516749A Electrochemically roughened aluminium semiconductor processing apparatus surface
07/28/2004CN1516536A Inductive coupled antenna and plasma processor using the same
07/28/2004CN1516535A Plasma processing container internal parts
07/28/2004CN1516238A Nitride semiconductor growth method, nitride semiconductor substrate and device
07/28/2004CN1516237A Component structure of deposition chamber
07/28/2004CN1516233A Preloaded plasma reactor device and its use
07/28/2004CN1515712A Method for mfg. graphite nano fiber, electronic transmitting source and display element
07/28/2004CN1159750C Method of growing nitride semiconductors
07/28/2004CN1159216C Process for preparing carbon nano-tube film on stainless steel substrate
07/27/2004US6768787 Common channeling signaling network maintenance and testing
07/27/2004US6768200 Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device
07/27/2004US6767845 Method of manufacturing semiconductor device
07/27/2004US6767836 Method of cleaning a CVD reaction chamber using an active oxygen species
07/27/2004US6767830 Br2SbCH3 a solid source ion implant and CVD precursor
07/27/2004US6767829 Plasma deposition method and system
07/27/2004US6767823 Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers
07/27/2004US6767812 Method of forming CVD titanium film
07/27/2004US6767796 Method of manufacturing semiconductor device and the semiconductor device
07/27/2004US6767698 High speed stripping for damaged photoresist
07/27/2004US6767592 Method for thin film protective overcoat
07/27/2004US6767583 Coated cemented carbide cutting tool inserts, particularly useful for milling of grey cast under wet conditions, preferably at low and moderate cutting speeds
07/27/2004US6767582 Method of modifying source chemicals in an ald process
07/27/2004US6767581 Adding to a gas stream including materials to be deposited an effective amount of nitroxyl radicals for depositing thin layers by chemical vapor deposition
07/27/2004US6767475 Chemical-organic planarization process for atomically smooth interfaces
07/27/2004US6767429 Vacuum processing apparatus
07/27/2004US6767402 Method for vaporizing and supplying
07/22/2004WO2004061897A2 Very low moisture o-ring and method for preparing the same
07/22/2004WO2004061167A1 LOW-RESISTANCE n TYPE SEMICONDUCTOR DIAMOND AND PROCESS FOR PRODUCING THE SAME
07/22/2004WO2004061162A1 Plating solutions for electrochemical or chemical deposition of copper interconnects and methods therefor
07/22/2004WO2004061155A1 High rate deposition of titanium dioxide
07/22/2004WO2004061154A1 Method for forming tungsten nitride film
07/22/2004WO2004060810A2 Method and system for supplying high purity fluid
07/22/2004WO2004049369A3 Patterned granulized catalyst layer suitable for electron-emitting device, and associated fabrication method
07/22/2004WO2004035496A3 Article having nano-scaled structures and a process for making such article
07/22/2004WO2004017383A3 Low termperature deposition of silicon oxides and oxynitrides
07/22/2004WO2004009861A3 Method to form ultra high quality silicon-containing compound layers
07/22/2004WO2004008493A9 Method and apparatus for supporting semiconductor wafers
07/22/2004WO2004003963A3 Plasma processor with electrode simultaneously responsive to plural frequencies
07/22/2004WO2003088314A3 Remote monitoring system for chemical liquid delivery
07/22/2004WO2003049141A3 Device for applying an electromagnetic microwave to a plasma container
07/22/2004US20040143370 programmable logic controller in communication with the system control computer and operatively coupled to electrically controlled valves; refresh time for control of the valves is less than 10 millisecond so repetitive cycling is fast
07/22/2004US20040142824 depositing a RBa2Cu3O7-layer with a high growth rateonto a RBa2Cu3O7 layer with a low growth rate, where R and X are yttrium and/or a rare earth metal; preferably a biaxially textured substrate
07/22/2004US20040142577 Method for producing material of electronic device
07/22/2004US20040142559 Technique for high efficiency metalorganic chemical vapor deposition
07/22/2004US20040142558 Apparatus and method for atomic layer deposition on substrates
07/22/2004US20040142557 Deposition of tungsten nitride
07/22/2004US20040142555 Chemical vapor deposition precursors for deposition of tantalum-based materials
07/22/2004US20040142212 Pyrolytic boron nitride crucible and method
07/22/2004US20040142184 Production of a composite material having a biodegradable plastic substrate and at least one coating
07/22/2004US20040142104 Apparatus and method for depositing environmentally sensitive thin film materials
07/22/2004US20040141867 For use as machining tools and as structural parts; hardness
07/22/2004US20040141278 Device and method for charge removal from dielectric surfaces
07/22/2004US20040140753 Barrier coatings and methods in discharge lamps
07/22/2004US20040140453 Heating a cesium halide with a Europium compound containing one or more halides, cooling mixture, and recovering the CsX:Eu phosphor
07/22/2004US20040140036 Plasma processing method and apparatus
07/22/2004US20040139983 Cleaning of CVD chambers using remote source with CXFYOZ based chemistry
07/22/2004US20040139917 Plasma processing apparatus
07/22/2004US20040139916 Applying the particles to be separated on a substrate supported membrane, such that the particles are mobile across the surface of the substrate supported membrane; providing an electrical field; temporarily modifying the electrical field and/or adding a substrate supported membrane
07/22/2004US20040139915 Plasma CVD apparatus and dry cleaning method of the same
07/22/2004DE10300734A1 Plasma treatment of workpieces involves positioning plasma chamber along closed path with carrying device that can be driven with rotary motion about essentially horizontal axis of rotation
07/22/2004DE10296557T5 Falleneinrichtung und -Verfahren für Kondensierbare Nebenprodukte von Ablagerungsreaktionen Trap device and method for condensable by-products of deposition reactions
07/22/2004DE102004006131A1 Bandbeschichtungsanlage mit einer Vakuumkammer und einer Beschichtungswalze Tape coating system with a vacuum chamber and a coating roll
07/22/2004CA2507961A1 Very low moisture o-ring and method for preparing the same
07/22/2004CA2474909A1 Low-resistance n type semiconductor diamond and process for producing the same
07/21/2004EP1439571A1 DEVICE AND METHOD FOR MICROWAVE PLASMA PROCESSING, AND MICROWAVE POWER SUPPLY DEVICE
07/21/2004EP1439246A1 Silicon carbide and method for producing the same
07/21/2004EP1439242A1 Electrostatic chuck support mechanism, support stand device and plasma processing equipment
07/21/2004EP1439241A2 Blood collection tube assembly
07/21/2004EP1439240A1 METHOD FOR PRESS WORKING, PLATED STEEL PRODUCT FOR USE THEREIN AND METHOD FOR PRODUCING THE STEEL PRODUCT