Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
08/2004
08/05/2004US20040149387 Inductively coupled antenna and plasma processing apparatus using the same
08/05/2004US20040149386 Plasma processing device and method of cleaning the same
08/05/2004US20040149330 Stacked photovoltaic device
08/05/2004US20040149227 Substrate heating device and method of purging the device
08/05/2004US20040149225 Process and apparatus for depositing plasma coating onto a container
08/05/2004US20040149224 Gas tube end cap for a microwave plasma generator
08/05/2004US20040149221 Plasma processor
08/05/2004US20040149220 Methods and apparatus for forming precursors
08/05/2004US20040149216 Plasma processing apparatus
08/05/2004US20040149215 Ultraviolet ray assisted processing device for semiconductor processing
08/05/2004US20040149213 Micromachines for delivering precursors and gases for film deposition
08/05/2004US20040149212 Reaction chamber for depositing thin film
08/05/2004US20040149211 Systems including heated shower heads for thin film deposition and related methods
08/05/2004US20040149209 Process and apparatus for the production of carbon nanotubes
08/05/2004US20040149208 Particle control device and particle control method for vacuum processing apparatus
08/05/2004DE19833718B4 Verfahren zur Verringerung der Partikelabgabe und Partikelaufnahme einer Waferauflage A method for reducing the particle charge and particle absorption of a wafer support
08/05/2004DE19751785B4 Verfahren zum Behandeln eines Halbleiter-Wafers A method for treating a semiconductor wafer
08/05/2004DE10303413B3 Production of structured ceramic layers on surfaces of relief arranged vertically to substrate surface comprises preparing semiconductor substrate with relief on its surface, filling the relief with lacquer and further processing
08/05/2004CA2512648A1 Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles
08/05/2004CA2512387A1 Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
08/04/2004EP1443545A2 Method of making a haze free, lead rich pzt film
08/04/2004EP1443543A1 Thermal treating apparatus
08/04/2004EP1443527A1 SUBSTRATE WITH TRANSPARENT CONDUCTIVE OXIDE FILM AND PRODUCTION METHOD THEREFOR, AND PHOTOELECTRIC CONVERSION ELEMENT
08/04/2004EP1442860A1 Honeycomb structural body forming ferrule and method of manufacturing the ferrule
08/04/2004EP1442788A2 Screening inorganic materials for catalysis
08/04/2004EP1442154A1 Method for producing a continuous coating at the surface of a component
08/04/2004EP1183406B1 Sequential chemical vapor deposition
08/04/2004EP0977907B1 Combination antiabrasion layer
08/04/2004CN2630257Y Superhigh vacuum chemical vapour deposition apparatus
08/04/2004CN1518758A Rhodium-riched oxygen barriers
08/04/2004CN1518757A Smooth multipart substrate support member for CVD
08/04/2004CN1518109A Semiconductor suitable for forming semiconductor film coating such as platinum and its manufacturing method
08/04/2004CN1518076A Forebody for depositing silicon film and its method
08/04/2004CN1518075A Organic insulating film, its manufacturing method, semiconductor device using the organic insulating film and its manufacturing method
08/04/2004CN1518073A 等离子体处理装置及聚焦环 The plasma processing apparatus and the focus ring
08/04/2004CN1517450A Insertion piece with hard metal coating
08/04/2004CN1517447A Raw material composition for CVD and its manufacturing method and chemical gas-phase evaporation plating method of iridium or iridium compound film
08/04/2004CN1160767C Vapor deposition routes to nanoporous silica
08/04/2004CN1160483C Method for manufacturing thin film, and deposition apparatus
08/04/2004CN1160482C Double sintered diffuser
08/04/2004CN1160481C Metal organic chemical vapor deposition apparatus and deposition method
08/04/2004CN1160480C Apparatus for simultaneous deposition by physical vapor deposition and chemical vapor deposition and method therefor
08/04/2004CN1160479C Plasma enhanced chemical processing reactor and method
08/04/2004CN1160478C Vacuum film growth apparatus
08/04/2004CN1160423C Interference pigments having blue mass tone
08/04/2004CN1160186C Nano-scale composition, compound structure, its manufacturing and application
08/03/2004US6772072 Method and apparatus for monitoring solid precursor delivery
08/03/2004US6772045 System for determining dry cleaning timing, method for determining dry cleaning timing, dry cleaning method, and method for manufacturing semiconductor device
08/03/2004US6771868 Use of deuterated gases for the vapor deposition of thin films for low-loss optical devices and waveguides
08/03/2004US6770914 III nitride semiconductor substrate for ELO
08/03/2004US6770575 Method for improving thermal stability of fluorinated amorphous carbon low dielectric constant materials
08/03/2004US6770573 Method for fabricating an ultralow dielectric constant material
08/03/2004US6770561 Method for depositing metal film through chemical vapor deposition process
08/03/2004US6770556 Method of depositing a low dielectric with organo silane
08/03/2004US6770399 Composite material for anode of lithium secondary battery, and lithium secondary battery
08/03/2004US6770379 Susceptor for semiconductor manufacturing equipment and process for producing the same
08/03/2004US6770332 Method for forming film by plasma
08/03/2004US6770165 Apparatus for plasma treatment
08/03/2004US6770146 Method and system for rotating a semiconductor wafer in processing chambers
08/03/2004US6770145 Low-pressure CVD apparatus and method of manufacturing a thin film
08/03/2004US6770144 High speed vapor deposition of dielectric; dry etching patterning
08/03/2004US6769629 Gas injector adapted for ALD process
08/03/2004US6769439 Used in semiconductor manufacturing, a plate-shaped protector made of dielectric and having similar electrical properties as the deposited film; removing thin film deposited on inner face of vacuum vessel
08/03/2004CA2289039C Packaging material
08/03/2004CA2109236C Coated filaments
07/2004
07/29/2004WO2004064407A2 Tunable gas distribution plate assembly
07/29/2004WO2004064147A2 Integration of ald/cvd barriers with porous low k materials
07/29/2004WO2004064136A1 A method of improving stability in low k barrier layers
07/29/2004WO2004064113A2 Cooled deposition baffle in high density plasma semiconductor processing
07/29/2004WO2004063430A1 High-speed diamond growth using a microwave plasma in pulsed mode
07/29/2004WO2004063422A2 Method for curing low dielectric constant film using direct current bias
07/29/2004WO2004063421A2 Deposition chamber surface enhancement and resulting deposition chambers
07/29/2004WO2004063418A1 Member of apparatus for plasma treatment, member of treating apparatus, apparatus for plasma treatment, treating apparatus and method of plasma treatment
07/29/2004WO2004063417A2 Method to improve cracking thresholds and mechanical properties of low-k dielectric material
07/29/2004WO2004063416A2 Apparatus and method for solution plasma spraying
07/29/2004WO2004062341A2 Method and apparatus for layer by layer deposition of thin films
07/29/2004WO2004041397A3 Preparation of asymmetric membranes using hot-filament chemical vapor deposition
07/29/2004WO2004024981A3 Precursor material delivery system for atomic layer deposition
07/29/2004WO2003097891A3 High-power microwave window
07/29/2004WO2003060184A9 Method and apparatus for forming silicon containing films
07/29/2004US20040147736 Activated polyethylene glycol compounds
07/29/2004US20040147191 Anti-ballistic fabric or other substrate
07/29/2004US20040147138 Method for forming metal-containing films using metal complexes with chelating o- and/or n-donor ligands
07/29/2004US20040147137 Method for fabricating semiconductor devices
07/29/2004US20040147115 Two-step formation of etch stop layer
07/29/2004US20040147109 Low dielectric constant film produced from silicon compounds comprising silicon-carbon bond
07/29/2004US20040147103 Technique for high efficiency metaloganic chemical vapor deposition
07/29/2004US20040147101 Surface preparation prior to deposition
07/29/2004US20040147098 Method for forming, by CVD, nanostructures of semi-conductor material of homogeneous and controlled size on dielectric material
07/29/2004US20040147086 Methods and apparatus for forming rhodium-containing layers
07/29/2004US20040147052 System and method for increasing nitrogen incorporation into a semiconductor material layer using an additional element
07/29/2004US20040146720 Glass plate having electroconductive film formed thereon
07/29/2004US20040146667 Manufacturing device for dlc film coated plastic container, dlc film coated plastic container, and method of manufacturing the dlc film coated plastic container
07/29/2004US20040146666 Moisture and gas barrier plastic container with partition plates, and device for method manufacturing the plastic container
07/29/2004US20040146661 Hydrogen assisted hdp-cvd deposition process for aggressive gap-fill technology
07/29/2004US20040146655 Using tris/tert-butyloxy/silanol ; cyclic process
07/29/2004US20040146644 Precursors for depositing silicon containing films and processes thereof
07/29/2004US20040146643 In interior of chemical reactor used for vapor deposition; depositing a silicide
07/29/2004US20040146448 Connecting vessel with phosphorus pentoxide to vessel with hafnium tetrachloride; cooling with liquid nitrogen; dropping fuming nitric acid into first vessel to produce nitrogen pentoxide; heating, disconnecting, refluxing; pumping, sublimation
07/29/2004US20040146378 Pressurized chamber; door with opening; suppression of air flow eliminates contamination; clean box