Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
08/2004
08/24/2004US6779483 Plasma CVD apparatus for large area CVD film
08/24/2004US6779482 Plasma deposition device for forming thin film
08/24/2004US6779481 Electrical coupling between chamber parts in electronic device processing equipment
08/24/2004US6779378 Method of monitoring evaporation rate of source material in a container
08/24/2004CA2141536C Abrasion wear resistant coated substrate product
08/19/2004WO2004070820A1 Wiring fabricating method
08/19/2004WO2004070817A2 Method of eliminating residual carbon from flowable oxide fill material
08/19/2004WO2004070814A1 Vacuum treating device with lidded treatment container
08/19/2004WO2004070813A1 Plasma processing apparatus and method
08/19/2004WO2004070803A1 Heater of chemical vapor deposition apparatus for manufacturing a thin film
08/19/2004WO2004070802A1 Treating system and operating method for treating system
08/19/2004WO2004070801A1 Fluid control device and heat treatment device
08/19/2004WO2004070788A2 Method for depositing a low dielectric constant film
08/19/2004WO2004070079A1 Semiconductor processing method for processing substrate to be processed and its apparatus
08/19/2004WO2004070078A1 METHOD OF FORMING A Ta2O5 COMPRISING LAYER
08/19/2004WO2004070074A2 Nanolayer deposition process
08/19/2004WO2004011694A3 Method and apparatus for generating gas to a processing chamber
08/19/2004WO2004010463A3 Vaporizer delivery ampoule
08/19/2004WO2004001808A8 Method and system for atomic layer removal and atomic layer exchange
08/19/2004US20040161946 Method for fluorocarbon film depositing
08/19/2004US20040161943 Silicon parts having reduced metallic impurity concentration for plasma reaction chambers
08/19/2004US20040161911 Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD
08/19/2004US20040161903 Nitrous oxide anneal of TEOS/ozone CVD for improved gapfill
08/19/2004US20040161899 Radical oxidation and/or nitridation during metal oxide layer deposition process
08/19/2004US20040161892 Methods of forming metal-comprising materials and capacitor electrodes; and capacitor constructions
08/19/2004US20040161891 Semiconductor integrated circuit device and method of manufacturing the same
08/19/2004US20040161875 Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD
08/19/2004US20040161636 Method of depositing thin films for magnetic heads
08/19/2004US20040161617 Process for depositing low dielectric constant materials
08/19/2004US20040161609 Cubic boron nitride/diamond composite layers
08/19/2004US20040161536 Vapor deposition using high pressure gas ; supplying trimethylsilane and oxygen
08/19/2004US20040161535 Method of forming silicon carbide films
08/19/2004US20040161534 Generating discharging high pressure plasma; applying pulsed voltage
08/19/2004US20040161533 Vapor deposition of molybdenum, tungsten rhenium, or alloy thereof; controlling exhaust electroconductivity
08/19/2004US20040161528 Corrosion resistant protective coatings
08/19/2004US20040161372 Flowing exhaust gas into enclosure; forming film on removable substrate by chemical vapor deposition
08/19/2004US20040160672 Color shifting carbon-containing interference pigments
08/19/2004US20040160021 Electrostatic chucking device and manufacturing method thereof
08/19/2004US20040159854 Thin film device and its fabrication method
08/19/2004US20040159638 Clean process for an electron beam source
08/19/2004US20040159540 Pulsed electric field system for decontamination of biological agents on a dielectric sheet material
08/19/2004US20040159472 Method and apparatus for measurement of weight during CVI/CVD process
08/19/2004US20040159401 Vacuum chamber for plasma treatment; imparting mechanical oscillation to the apparatus and detecting oscillation generated
08/19/2004US20040159286 Plasma treatment device
08/19/2004US20040159285 Gas gate for isolating regions of differing gaseous pressure
08/19/2004US20040159005 Sub-atmospheric pressure delivery of liquids, solids and low vapor pressure gases
08/19/2004DE10305546A1 Internally coated hollow member, has a coating supplied using a gas plasma by pulling the component to be coated through a ring electrode connected to an HF source and direct current source
08/18/2004EP1447459A2 A method and system for producing thin films
08/18/2004EP1090159A4 Deposition of coatings using an atmospheric pressure plasma jet
08/18/2004CN1522462A Method for preparing low dielectric films
08/18/2004CN1522457A Chamber components having textured surfaces and method of manufacture
08/18/2004CN1522314A Semiconductor or liquid crystal producing device
08/18/2004CN1522313A Method for improving nucleation and adhesion of cvd and ald films deposited onto low-dielectric-constant dielectrics
08/18/2004CN1522215A Device for manufacturing DLC film coated plastic container, DLC film coated plastic container and manufacturing method thereof
08/18/2004CN1521805A Plasma processing device, annular element and plasma processing method
08/18/2004CN1521769A Formation of thin film resistors
08/18/2004CN1521768A Formation of thin film resistors
08/18/2004CN1521172A Organic metal compound and its manufacturing method ,solution materials and thin films containing the same compound
08/18/2004CN1162569C Deposition process for low-stress superthick nitrogen silicon compound film
08/18/2004CN1162568C Process for preparing selective diamond film
08/17/2004US6777880 Particles are exposed in location-selective manner to external adjustment forces and/or plasma conditions are subjected to location-selective change to apply particles onto a substrate surface mask-free and/ or subject it to plasma treatment
08/17/2004US6777740 Capacitor for semiconductor memory device and method of manufacturing the same
08/17/2004US6777690 Organic film vapor deposition method and a scintillator panel
08/17/2004US6777565 Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivatives
08/17/2004US6777374 Photocatalysts are semiconductors such as titanium dioxide and are coated onto a substrate by flame aerosol coating
08/17/2004US6777353 Process for producing oxide thin films
08/17/2004US6777352 Variable flow deposition apparatus and method in semiconductor substrate processing
08/17/2004US6777349 Hermetic silicon carbide
08/17/2004US6777347 Method to produce porous oxide including forming a precoating oxide and a thermal oxide
08/17/2004US6777330 Chemistry for chemical vapor deposition of titanium containing films
08/17/2004US6777327 Method of barrier metal surface treatment prior to Cu deposition to improve adhesion and trench filling characteristics
08/17/2004US6777308 Method of improving HDP fill process
08/17/2004US6777296 Semiconductor device and manufacturing method thereof
08/17/2004US6777171 Using gas mixtures; vapor deposition; applying electricity
08/17/2004US6777045 Chamber components having textured surfaces and method of manufacture
08/17/2004US6777037 Plasma processing method and apparatus
08/17/2004US6777030 Ion milling prior to diamond-like carbon (dlc) inclusive coating system) deposition; improves adherence, scratch resistance
08/17/2004US6777029 Method for determining product coating rates for fluidized beds
08/17/2004US6776875 Semiconductor substrate support assembly having lobed o-rings therein
08/17/2004US6776873 Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers
08/17/2004US6776851 Oxygen based cleaning operation liberates fluorine from the fluorine containing polymer layer to remove a silicon based residue. an apparatus configured to remove chamber deposits between process operations is also provided.
08/17/2004US6776850 Preventative maintenance aided tool for CVD chamber
08/17/2004US6776849 Wafer holder with peripheral lift ring
08/17/2004US6776848 Motorized chamber lid
08/17/2004US6776842 First thin epitaxial deposition, then an anneal; the conditions and duration such that arsenic diffusion length is lower than thickness of the layer, then second epitaxial deposition to desired thickness; avoids autodoping of arsenic
08/17/2004US6776819 Gas supplying apparatus and method of testing the same for clogs
08/17/2004US6776805 Semiconductor manufacturing apparatus having a moisture measuring device
08/17/2004US6776170 Method and apparatus for plasma cleaning of workpieces
08/17/2004US6775876 Apparatus having scraping blades attached peripherally about annular mounting member and arranged parallel to longitudinal axis of chamber, reciprocable movement unit for rotating blades circumferentially back and forth along interior surface
08/12/2004WO2004068917A1 Plasma processor and plasma processing method
08/12/2004WO2004068541A2 Wafer handling apparatus
08/12/2004WO2004068530A1 Plasma reactor including helical electrodes
08/12/2004WO2004067812A1 Diamond composite substrate and process for producing the same
08/12/2004WO2004067800A1 Method and apparatus for cleaning a cvd chamber
08/12/2004WO2004067799A1 Susceptor device for semiconductor processing, film forming apparatus, and film forming method
08/12/2004WO2004067676A1 Controlled sulfur species deposition process
08/12/2004WO2004066944A2 Products for treating and preventing chronic diseases: eliminating the autoimmune triggers that underly chronic disease
08/12/2004WO2004057653A3 A method and apparatus for forming a high quality low temperature silicon nitride layer
08/12/2004WO2004053947A3 Titanium silicon nitride (tisin) barrier layer for copper diffusion
08/12/2004WO2004025697A3 Thermal process station with heated lid