Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
09/2004
09/16/2004US20040177813 Substrate support lift mechanism
09/16/2004US20040177812 Heating systems
09/16/2004US20040177516 Cutting member with dual profile tip
09/16/2004DE19711268B4 Chemisches Dampfabscheidungsverfahren mit induktiv gekoppeltem Plasma, Verwendung des Verfahrens zum Herstellen von Dünnschichttransistoren und durch das Verfahren hergestellte Dünnschichten aus amorphen Silizium Chemical vapor deposition method using inductively coupled plasma, using the method for manufacturing thin film transistors and thin films produced by the process of amorphous silicon
09/16/2004DE10308381A1 Verfahren zur Abscheidung von Silizium A process for the deposition of silicon
09/16/2004DE10208450B4 Verfahren zum Abscheiden dünner Schichten mittels ALD/CVD-Prozessen in Verbindung mit schnellen thermischen Prozessen A method for depositing thin films by ALD / CVD processes in conjunction with rapid thermal processes
09/16/2004DE102004008334A1 Verfahren zum lokalen Ätzen eines Substrats und Vorrichtung zur Durchführung des Verfahrens A method for locally etching a substrate and apparatus for carrying out the method
09/16/2004CA2517133A1 Plasma processing apparatus and method
09/16/2004CA2495908A1 Nitride semiconductor device and method for manufacturing same
09/15/2004EP1458016A1 Rare-earth complexes for the manufacture of optical fibers
09/15/2004EP1457583A2 Mechanical enhancement of dense and porous organosilicate materials by UV exposure
09/15/2004EP1456871A1 Susceptor for epitaxial growth and epitaxial growth method
09/15/2004EP1456867A1 Heated vacuum support apparatus
09/15/2004EP1456436A1 Method for producing particles with diamond structure
09/15/2004EP1456434A1 A method of depositing dielectric materials in damascene applications
09/15/2004EP1456433A1 Method for monitoring the course of a process using a reactive gas containing one or several hydrocarbons
09/15/2004EP1455918A2 Generation, distribution, and use of molecular fluorine within a fabrication facility
09/15/2004EP1315853B1 Device for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates
09/15/2004EP1196645B1 Seal means and its application in deposition reactor
09/15/2004EP0789981B1 Thermal reactor optimization
09/15/2004CN1529900A Assembly comprising heat-distribution plate and edge support
09/15/2004CN1529839A Valve control system for atomic layer deposition chamber
09/15/2004CN1529767A Increased stability low concentration gases, products comprising same and methods of making same
09/15/2004CN1528949A Apparatus for use with CVI/CVD processes
09/15/2004CN1528948A Gallium nitride base film epitaxial growth apparatus by metal organic chemical vapor deposition
09/15/2004CN1528947A Hard alloy matix complex shape cutter diamond coating preparation method
09/15/2004CN1528663A Method for preparing onion-like fullerene by CVD
09/14/2004US6791258 Organic light emitting full color display panel
09/14/2004US6790793 Method for manufacturing semiconductor device
09/14/2004US6790789 Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made
09/14/2004US6790788 Method of improving stability in low k barrier layers
09/14/2004US6790677 Method of forming a ferroelectric film and fabrication process of a semiconductor device having a ferroelectric film
09/14/2004US6790497 Tubular elongate polycrystalline diamond or cubic boron nitride with residual binder formed by electrical discharge machining
09/14/2004US6790475 Source gas delivery
09/14/2004US6790375 Dechucking method and apparatus for workpieces in vacuum processors
09/14/2004US6790311 Plasma reactor having RF power applicator and a dual-purpose window
09/14/2004US6790289 Cleaning a deposit by processing with fluorine; chemical cleaning; physical cleaning by blasting with a cleaning media
09/14/2004US6790278 Method for preparing low-resistant p-type SrTiO3
09/14/2004US6790258 To control the build-up in vacuum pump lines, with first and second trapping media positioned to take advantage of differences in heat exchange efficiencies between the media and solid aluminum chloride build-up on the trapping media
09/14/2004US6790242 Fullerene coated component of semiconductor processing equipment and method of manufacturing thereof
09/14/2004US6789789 High throughput vaporizer
09/14/2004US6789583 Gas supply apparatus and gas supply method
09/14/2004US6789498 Elements having erosion resistance
09/14/2004CA2352929C Method of forming chromium coated copper for printed circuit boards
09/14/2004CA2322363C Method of forming chromium coated copper for printed circuit boards
09/10/2004WO2004077543A1 Method for producing hydrogenated silicon oxycarbide films
09/10/2004WO2004077540A1 Plasma process device
09/10/2004WO2004077536A1 Production method for antenna and production device for antenna
09/10/2004WO2004077515A2 Apparatus and method for delivery of reactive chemical precursors to the surface to be treated
09/10/2004WO2004076716A1 Apparatus and method for depositing large area coatings on planar surfaces
09/10/2004WO2004076715A1 Vacuum processing apparatus
09/10/2004WO2004076713A1 Method for depositing silicon
09/10/2004WO2004076712A1 Bismuth precursor solution for use in a cvd process and deposition process of a bismuth containing thin film using thereof
09/10/2004WO2004076711A1 Coating film excellent in the resistance to corrosion with halogen-containing gases and plasmas, laminated structure coated therewith, and process for the production of both
09/10/2004WO2004076343A1 Method for fabricating three-dimensional microstructure by fib-cvd and drawing system for three-dimensional microstructure
09/10/2004WO2004038774A3 Method for producing semi-conducting devices and devices obtained with this method
09/10/2004WO2003097245A3 Atomisation of a precursor into an excitation medium for coating a remote substrate
09/09/2004US20040175957 Mechanical enhancement of dense and porous organosilicate materials by UV exposure
09/09/2004US20040175947 Method for growing thin films
09/09/2004US20040175939 Susceptor apparatus for inverted type MOCVD reactor
09/09/2004US20040175929 Method of improving interlayer adhesion
09/09/2004US20040175905 Method of forming thin film using atomic layer deposition
09/09/2004US20040175882 Atomic layer deposited dielectric layers
09/09/2004US20040175878 Heating furnace and semiconductor wafer-holding jig assembly and process of manufacturing semiconductor devices
09/09/2004US20040175666 Heat treatment apparatus
09/09/2004US20040175586 Conformal thin films over textured capacitor electrodes
09/09/2004US20040175581 Modulated/composited CVD low-k films with improved mechanical and electrical properties for nanoelectronic devices
09/09/2004US20040175580 Barrier layer for an article and method of making said barrier layer by expanding thermal plasma
09/09/2004US20040175579 Method for chemical vapor deposition of silicon on to substrates for use in corrosive and vacuum environments
09/09/2004US20040175578 Method for chemical vapor deposition of silicon on to substrates for use in corrosive and vacuum environments
09/09/2004US20040175564 One piece shim
09/09/2004US20040175512 Barrier layer for an article and method of making said barrier layer by expanding thermal plasma
09/09/2004US20040175502 Two-step atomic layer deposition of copper layers
09/09/2004US20040175501 Mechanical enhancement of dense and porous organosilicate materials by UV exposure
09/09/2004US20040175500 Method for forming transparent conductive film, transparent conductive film, glass substrate having the same and photoelectric transduction unit including the glass substrate
09/09/2004US20040175498 Depositing catalyst layer directly onto a substrate by passing reactants included in a carrier gas through an electrical discharge at atmospheric pressure, substrate is selected from the group consisting of a polymer membrane, a membrane formed of carbon cloth, and a membrane including carbon particles
09/09/2004US20040175492 Methods of forming ruthenium film by changing process conditions during chemical vapor deposition and ruthenium films formed thereby
09/09/2004US20040173910 to reduce the effective dielectric constant of the insulating film while maintaining better reliability of the semiconductor device, which otherwise may be deteriorated by a moisture absorption
09/09/2004US20040173759 Device, set and method for carrying a gas or a liquid to a surface through a tube
09/09/2004US20040173569 Cleaning gas and etching gas
09/09/2004US20040173316 Apparatus and method using a microwave source for reactive atom plasma processing
09/09/2004US20040173314 Plasma processing apparatus and method
09/09/2004US20040173162 Motorized chamber lid
09/09/2004US20040173161 Wafer handling apparatus and method of manufacturing thereof
09/09/2004US20040173158 Fiber coating method and reactor
09/09/2004US20040173157 Plasma enhanced chemical vapor deposition apparatus and method for forming nitride layer using the same
09/09/2004US20040173152 Method and apparatus for forming a thin film
09/09/2004US20040173150 Reactors, systems with reaction chambers, and methods for depositing materials onto micro-device workpieces
09/09/2004DE4325041B4 Aetz- oder Plasma-CVD-Anlage Caustic or plasma CVD system
09/09/2004DE10361829A1 Halbleiterbauelement mit epitaktischer C49-Titan-Silizid(TiSi2)-Schicht und Verfahren zur Herstellung desselben Of the same semiconductor device with an epitaxial C49-titanium silicide (TiSi2) layer and processes for preparing
09/09/2004DE10082995B4 Wafer-Haltevorrichtung Wafer holding device
09/08/2004EP1455408A1 Method for preparing membrane electrode assemblies
09/08/2004EP1455233A2 Processing method and system
09/08/2004EP1455003A2 Coated cemented carbide insert
09/08/2004EP1454347A1 Method for forming thin film
09/08/2004EP1454346A1 Method and apparatus for chemical vapor ddeposition capable of preventing contamination and enhancing film growth rate
09/08/2004EP1454343A2 A method of forming a silicon nitride layer on a substrate
09/08/2004EP1453595A1 Plasma treatment of porous materials
09/08/2004EP1261755B1 Device and method for carrying out plasma enhanced surface treatment of substrates in a vacuum
09/08/2004EP1110248A4 Method for depositing layers of high quality semiconductor material