Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
10/2004
10/14/2004WO2004025697B1 Thermal process station with heated lid
10/14/2004WO2004012278A3 Method and apparatus for superconductor material on a tape substrate
10/14/2004US20040204483 Such as dimethyl(2-(N,N-dimethylaminomethyl)-4-propylphenyl) bismuth; for chemical vapor deposition (CVD)
10/14/2004US20040203255 Method of forming Si-containing thin film
10/14/2004US20040203254 Modulated temperature method of atomic layer deposition (ALD) of high dielectric constant films
10/14/2004US20040203253 Method of forming a dielectric layer
10/14/2004US20040203234 MOCVD of tungsten nitride thin films using W(CO)6 and NH3 for Copper barrier applications
10/14/2004US20040203233 Compositions for depositing a metal layer and methods of forming a metal layer using the same
10/14/2004US20040203232 Methods for treating pluralities of discrete semiconductor substrates
10/14/2004US20040203220 Method of making iron silicide and method of making photoelectric transducer
10/14/2004US20040203178 Isolation chamber arrangement for serial processing of semiconductor wafers for the electronic industry
10/14/2004US20040203176 Hydrogen-less CVD TiN process for FeRAM VIA0 barrier application
10/14/2004US20040202920 Cermet electrode and a method of manufacturing the same
10/14/2004US20040202877 Chemical vapor deposition of coatings on cutters in hydrogen or argon atmosphere, by adding oxidizers and initiating nucleation of layers on the surfaces by supplying reactive gases and catalysts or texturizers, then heating; wear resistance
10/14/2004US20040202875 Structure with substrate, monomolecular layer of polycyclic aromatic compound having defined axis oriented normal to plane of monolayer and covalently attached at one axial end to substrate, second layer with compound attached to first layer
10/14/2004US20040202786 Method of forming low-resistivity tungsten interconnects
10/14/2004US20040201103 Low dielectric constant film produced from silicon compounds comprising silicon-carbon bonds
10/14/2004US20040201064 Organic thin-film semiconductor element and manufacturing method for the same
10/14/2004US20040200802 Apparatus and method for reactive atom plasma processing for material deposition
10/14/2004US20040200599 Amorphous carbon layer for heat exchangers and processes thereof
10/14/2004US20040200576 Method and apparatus for plasma cleaning of workpieces
10/14/2004US20040200499 Backflush chamber clean
10/14/2004US20040200498 Method and apparatus for cleaning a substrate processing chamber
10/14/2004US20040200417 Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
10/14/2004US20040200415 Substrate processing apparatus
10/14/2004US20040200413 Chemical vapor deposition apparatus
10/14/2004US20040200412 Chemical vapor deposition reactor and process chamber for said reactor
10/14/2004US20040200214 Trap apparatus
10/14/2004DE10355038A1 Application of anti-stick coating, preferably to micromechanical structure, e.g. sensor or actuator for gyroscope or acceleration sensor, uses silanes with reactive and inert groups, preferably in chemical vapor deposition, and hydrolysis
10/14/2004DE10314067A1 Device for vacuum coating substrates, e.g. plastic bottles, comprises a transport unit, coating stations having coating sites, an evacuating unit, and a unit for rotating the coating sites
10/14/2004DE10297368T5 System und Verfahren zum Erwärmen von Halbleiterwafern durch Optimieren der Absorption elektromagnetischer Energie System and method for heating semiconductor wafers by optimizing the absorption of electromagnetic energy
10/13/2004EP1466997A1 Method for forming and arrangement of barrier layers on a polymeric substrate
10/13/2004EP1466996A2 Method of producing a protective coating comprising aluminium and zirconium on a metal
10/13/2004EP1466918A1 Novel bismuth compounds, process of producing the same, and process of producing a film
10/13/2004EP1466353A1 Contamination suppression in chemical fluid deposition
10/13/2004EP1466041A1 Coloured diamond
10/13/2004EP1466035A1 Method for depositing inorganic/organic films
10/13/2004EP1466033A1 Emissivity-change-free pumping plate kit in a single wafer chamber
10/13/2004EP1466032A1 Volatile copper(ii) complexes for deposition of copper films by atomic layer deposition
10/13/2004EP1466031A1 Method and installation for the densification of substrates by means of chemical vapour infiltration
10/13/2004EP1466030A1 Vaporiser/delivery vessel for volatile/thermally sensitive solid and liquid compounds
10/13/2004EP1465833A1 A method for manufacturing a nanostructure in-situ, and in-situ manufactured nanostructure devices
10/13/2004EP1320636B9 Method and device for depositing especially, organic layers by organic vapor phase deposition
10/13/2004EP1286790A4 Combinatorial synthesis of material chips
10/13/2004EP1142004B1 Method for boron doping wafers using a vertical oven system
10/13/2004CN1537322A Semiconductor mfg. device and method for mfg. semiconductor
10/13/2004CN1537178A CVD process for preparing feeri electric films using bi alcoxides
10/13/2004CN1537089A Method of producing tantalum and niobium alkoxides
10/13/2004CN1537034A Method for producing coated synthetic body
10/13/2004CN1536612A Gas supply device
10/13/2004CN1170957C Processing chamber for atomic layer deposition processes
10/12/2004US6804572 Enhanced process and profile simulator algorithms
10/12/2004US6803702 Piezoelectric element and method of manufacturing same
10/12/2004US6803548 Batch-type heat treatment apparatus and control method for the batch-type heat treatment apparatus
10/12/2004US6803325 Apparatus for improving barrier layer adhesion to HDP-FSG thin films
10/12/2004US6803311 Method for forming metal films
10/12/2004US6803260 Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method
10/12/2004US6803080 Method of forming crystalline silicon film by CVD
10/12/2004US6803074 Dissolving metal compounds in solvent, atomizing metal compound solution, introducing atomized solution into film-forming chamber, forming complex oxide thin film
10/12/2004US6802991 Method for preparing a CsX photostimulable phosphor and phosphor screens therefrom
10/12/2004US6802944 Etching first with physical sputtering and secondly a chemically reactive gas between deposition of two films; silica deposition
10/12/2004US6802942 Storage plate support for receiving disk-shaped storage plates
10/12/2004US6802935 Semiconductor chamber process apparatus and method
10/12/2004US6802926 Method of producing semiconductor thin film and method of producing solar cell using same
10/12/2004US6802906 Emissivity-change-free pumping plate kit in a single wafer chamber
10/12/2004US6802712 Heating system, method for heating a deposition or oxidation reactor, and reactor including the heating system
10/12/2004US6802457 Coatings for use in fuel system components
10/12/2004CA2370337C Device for treating a container with microwave plasma
10/07/2004WO2004086483A1 Plasma film-forming method and plasma film-forming apparatus
10/07/2004WO2004086482A1 Method for cleaning thin-film forming apparatus
10/07/2004WO2004086481A1 Film formation apparatus
10/07/2004WO2004086479A1 Substrate treating apparatus with increased purge efficiency
10/07/2004WO2004086475A1 Substrate treating apparatus and process for producing semiconductor device
10/07/2004WO2004086474A1 Container, container producing method, substrate processing device, and semiconductor device producing method
10/07/2004WO2004086451A2 Plasma generation using multi-step ionization
10/07/2004WO2004085704A1 Processor
10/07/2004WO2004085703A1 Processing apparatus and processing method
10/07/2004WO2004085702A1 Method for depositing compounds on a substrate by means of metalorganic chemical vapor deposition
10/07/2004WO2004085701A1 Titania coatings
10/07/2004WO2004085700A1 Method for the manufacture of a freestanding substrate
10/07/2004WO2004085328A2 Hydrophilic dlc on substrate with oxygen and/or hot water treatment
10/07/2004WO2004075258A3 Method for depositing a low-k material having a controlled thickness range
10/07/2004WO2004044957A3 Method and apparatus for providing and integrating a general metal delivery source (gmds) with atomic layer deposition (ald)
10/07/2004WO2004030013A8 Baffle plate in a plasma processing system
10/07/2004US20040198153 Wafer support system
10/07/2004US20040198071 Method of forming silicon oxide film and forming apparatus thereof
10/07/2004US20040198070 Method of depositing low K barrier layers
10/07/2004US20040198069 Method for hafnium nitride deposition
10/07/2004US20040198045 Method for forming a titanium nitride layer
10/07/2004US20040198042 Preparation of Group IVA and Group VIA compounds
10/07/2004US20040198027 Method of preparing a poly-crystalline silicon film
10/07/2004US20040198025 Methods of forming metal-containing layers
10/07/2004US20040197946 Systems and methods for forming strontium-and/or barium-containing layers
10/07/2004US20040197945 Germanium compounds
10/07/2004US20040197939 Method and apparatus for sub-micron device fabrication
10/07/2004US20040197582 bodies comprising cemented carbides and binders, and multilayer coatings comprising oxycarbonitrides and alumina, used for turning or machining cast iron and steels at high speeds
10/07/2004US20040197527 optical structure having a surface with uneven structures is exposed one or more precursor vapors to create a self-limiting film growth on the surface of the optical structure. The film thickness may be increased and controlled by subsequent exposures; atomic layer deposition
10/07/2004US20040197489 forming a first ceramic barrier layer on a substrate; modifying the surface of the first layer to introduce nucleation sites; and forming a second ceramic barrier layer on the first layer initiated at the nucleation sites; useful for packaging OLEDs
10/07/2004US20040197476 Process for producing aluminum oxide films at low temperatures
10/07/2004US20040197475 chemical vapor deposition of metalloorganic precursors, e.g., Ce 2,2,6,6-tetramethylheptane-3,5-dione, with O2 in a reducing atmosphere containing a nitrogen-hydrogen compound, especially ammonia, hydrazine, diimide and/or hydroxylamine