C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes

Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
11/2004
11/25/2004	US20040232467 TiSiN film forming method, diffusion barrier TiSiN film, semiconductor device, method of fabricating the same and TiSiN film forming system
11/25/2004	US20040232415 Vacuum processing method, vacuum processing apparatus, semiconductor device manufacturing method and semiconductor device
11/25/2004	US20040231800 In-situ cleaning of a polymer coated plasma processing chamber
11/25/2004	US20040231799 Plasma enhanced atomic layer deposition (peald) equipment and method of forming a conducting thin film using the same thereof
11/25/2004	US20040231795 Preconditioning a processing chamber used to form a barrier layer on top of a copper layer by depositing a seasoning layer of silicon oxide on exposed surfaces and optionally exposing the chamber to a plasma before introducing a substrate bearing a copper layer
11/25/2004	US20040231706 Cleaning a component of a process chamber
11/25/2004	US20040231695 For removing deposits in equipment for producing semiconductor or liquid crystal, comprising fluorine gas containing 1 vol % or less of oxygen and/or oxygen-containing compound; fluorine may be produced in situ through decomposition of a fluorine compound such as SiF4, HF, CF4, NF3 and WF6
11/25/2004	US20040231600 Wafer carrier locking device
11/25/2004	US20040231599 Process chamber with a base with sectionally different rotational drive and layer deposition method in such a process chamber
11/25/2004	US20040231592 Apparatus for processing substrate
11/25/2004	US20040231590 Deposition apparatus for the formation of polycrystalline materials on mobile substrates
11/25/2004	US20040231588 System and method for preferential chemical vapor deposition
11/25/2004	US20040231587 System for depositing a layered film
11/25/2004	US20040231585 Thin film forming method and thin film forming apparatus
11/25/2004	DE10319540A1 Verfahren zur ALD-Beschichtung von Substraten sowie eine zur Durchführung des Verfahrens geeignete Vorrichtung A method for ALD coating substrates as well as a device suitable for carrying out the method
11/25/2004	CA2525064A1 High purity electrolytic sulfonic acid solutions
11/25/2004	CA2509952A1 Plasma-enhanced film deposition
11/24/2004	EP1480260A1 Crystal manufacturing method
11/24/2004	EP1479946A2 Piston for internal combustion engine
11/24/2004	EP1479791A2 Cutting tool
11/24/2004	EP1479790A1 Cvd deposition of hf and zr containing oxynitride films
11/24/2004	EP1479435A1 Screening of organometallic materials for catalysis
11/24/2004	EP1479056A1 Device for depositing thin layers with a wireless detection of process parameters
11/24/2004	EP1478595A1 Method and apparatus for the production of carbon nanostructures
11/24/2004	CN1550045A Method of depositing an oxide layer on a substrate and a photovoltaic cell using said substrate
11/24/2004	CN1550031A Shielding system for plasma chamber
11/24/2004	CN1549792A Method for the selective production of ordered carbon nanotubes in a fluidised bed
11/24/2004	CN1548577A Cylinder structure of gate valve of continuous surface treater
11/24/2004	CN1548576A Instantaneously switch controlled vacuum unit for gaseous beam source furnace
11/24/2004	CN1177162C Module fluid transportation apparatus
11/23/2004	US6822107 Copper amine lewis base complexes; metallization on semiconductors; microelectronics
11/23/2004	US6821919 Superior toughness and adhesive strength ceramic coating of titanium aluminum carbon nitride-amorphous carbon nanocomposite
11/23/2004	US6821910 Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation
11/23/2004	US6821891 Atomic layer deposition of copper using a reducing gas and non-fluorinated copper precursors
11/23/2004	US6821889 Atomic layer deposition using a boron compound as a reducing agent.
11/23/2004	US6821862 Methods of manufacturing integrated circuit devices that include a metal oxide layer disposed on another layer to protect the other layer from diffusion of impurities and integrated circuit devices manufactured using same
11/23/2004	US6821845 Semiconductor device and method for manufacturing the same
11/23/2004	US6821838 Method of forming an ultra thin dielectric film and a semiconductor device incorporating the same
11/23/2004	US6821835 Chemical vapor deposition of silicate high dielectric constant materials
11/23/2004	US6821825 Process for deposition of semiconductor films
11/23/2004	US6821795 Infrared thermopile detector system for semiconductor process monitoring and control
11/23/2004	US6821655 For a transparent electrode in a solar battery, display device such as liquid crystal display and the like
11/23/2004	US6821641 Article protected by thermal barrier coating having a sintering inhibitor, and its fabrication
11/23/2004	US6821624 Amorphous carbon covered member
11/23/2004	US6821577 Staggered in-situ deposition and etching of a dielectric layer for HDP CVD
11/23/2004	US6821572 Nitriding with plasma gas hydrogen and nitrogen, removing nitrides film residues with chlorine gas in situ
11/23/2004	US6821571 Post-deposition treating a carbon-containing layer on a substrate, comprising exposing the carbon-containing layer to a treatment plasma
11/23/2004	US6821566 Silicon oxide film is formed on surface of silicon wafer by oxidation, then annealing and nitriding; semiconductors
11/23/2004	US6821563 Gas distribution system for cyclical layer deposition
11/23/2004	US6821560 Surface-treating support member and method using the same
11/23/2004	US6821497 Friction resistance; wear resistance; mixture of hydrocarbon and metal oxide
11/23/2004	US6821489 Non-toxic part of exhaust gas (silicon) is removed by chemical vapor deposition;
11/23/2004	US6821380 Temperature adjustment apparatus
11/23/2004	US6821377 Plasma processing apparatus
11/23/2004	US6821350 Solution of hydrogen fluoride and nitric acid; then inert gas flow
11/23/2004	US6821347 Apparatus and method for depositing materials onto microelectronic workpieces
11/23/2004	US6821341 Precursor for use in preparing layers on substrates
11/23/2004	US6821340 Method of manufacturing silicon carbide, silicon carbide, composite material, and semiconductor element
11/23/2004	US6820570 Atomic layer deposition reactor
11/18/2004	WO2004100249A1 Vaporizer and semiconductor processing apparatus
11/18/2004	WO2004100248A1 Substrate processing apparatus
11/18/2004	WO2004100246A1 Method for cleaning semiconductor processing apparatus
11/18/2004	WO2004099864A2 Electro-optical transducer
11/18/2004	WO2004099463A2 Tool and method for the chemical vapor deposition of a two-phase layer on a substrate member
11/18/2004	WO2004099462A1 Hybrid ball-lock attachment apparatus
11/18/2004	WO2004070074A3 Nanolayer deposition process
11/18/2004	WO2004061897A3 Very low moisture o-ring and method for preparing the same
11/18/2004	WO2004048639A3 Method and apparatus for controlling a deposition process
11/18/2004	US20040229459 Integration of annealing capability into metal deposition or CMP tool
11/18/2004	US20040229458 Method and structure of a thick metal layer using multiple deposition chambers
11/18/2004	US20040229449 Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
11/18/2004	US20040229421 Semiconductor device with novel FLM composition
11/18/2004	US20040229419 Gas processing device and method of fabricating a semiconductor device
11/18/2004	US20040229395 Low resistivity silicon carbide
11/18/2004	US20040228982 Vacuum deposition; non-concurrent gas introduction and exhaustion; oxidation or nitriding of silicon; semiconductors; quality coverage; uniform thickness
11/18/2004	US20040228968 Varying subpressure during the feeding of barium, strontium, titanium and oxygen to vary concentrations and therefore the stoichiometry of the barium strontium titanium oxide deposited; three-dimensional cell capacitors (trench/stack)
11/18/2004	US20040228578 Radiation-transmissive films on glass articles
11/18/2004	US20040227197 Composition of carbon nitride, thin film transistor with the composition of carbon nitride, display device with the thin film transistor, and manufacturing method thereof
11/18/2004	US20040226518 Outer tube made of silicon carbide and thermal treatment system for semiconductors
11/18/2004	US20040226515 Heat transfer assembly
11/18/2004	US20040226513 Chamber for uniform heating of large area substrates
11/18/2004	US20040226508 Apparatus and method for solution plasma spraying
11/18/2004	US20040226507 Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers
11/18/2004	DE19724847B4 Liderungssystem für Artilleriewaffen Liderungssystem for artillery
11/18/2004	DE10304798B3 Chemical vapor deposition (CVD) process for coating transparent organic substrates with a hard layer useful for the deposition of anticrack coatings of improved properties
11/17/2004	EP1478089A1 Surface acoustic wave device
11/17/2004	EP1478030A1 Tandem thin-film photoelectric transducer and its manufacturing method
11/17/2004	EP1477581A1 Enhanced alumina layer produced by CVD
11/17/2004	EP1477580A2 Deposition method using multiple deposition chambers
11/17/2004	EP1476903A2 A method of calibrating and using a semiconductor processing system
11/17/2004	EP1476591A2 A susceptor provided with indentations and an epitaxial reactor which uses the same
11/17/2004	EP1476255A2 Reactive polymer coatings
11/17/2004	CN1547760A Heater module for semiconductor manufacturing device
11/17/2004	CN1547757A System and method of fast ambient switching for rapid thermal processing
11/17/2004	CN1547624A Film formation method for semiconductor processing
11/17/2004	CN1546743A Single slice three chambers type infrared heating superhigh vacuum CVD epitaxial system
11/17/2004	CN1546742A Method of preparing ZnO crystal whisker adopting atmosphere open type MOCVD and apparatus therefor
11/17/2004	CN1546741A Method of preparing one-dimensional array material adopting atmosphere open type MOCVD and apparatus therefor
11/17/2004	CN1546740A Method of depositing big grain polycrystalline silicon thin film on ceramic substrate
11/17/2004	CN1546723A Chemical vapor deposition method of integrating heating and depositing of silicon slices

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