C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes

Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
12/2004
12/02/2004	WO2004050938A3 Micromachines for delivering precursors and gases for film deposition
12/02/2004	US20040243269 Performance evaluation method for plasma processing apparatus
12/02/2004	US20040242024 Film forming method for semiconductor device
12/02/2004	US20040241992 Silicon monocrystal wafer processing device, and method of manufacturing silicon monocrystal wafer and silicon epitaxial wafer
12/02/2004	US20040241988 Chemical vapor deposition metallization processes and chemical vapor deposition apparatus used therein
12/02/2004	US20040241964 Method and apparatus for forming film having low dielectric constant, and electronic device using the film
12/02/2004	US20040241592 Irradiating light onto a member having a modulation profile smaller than the wavelength of irradiated light and forming a distribution of optical near-field corresponding to surface of said member; introducing material gas to be used for a photochemical reaction; causing photochemical reaction
12/02/2004	US20040241463 Mechanical enhancer additives for low dielectric films
12/02/2004	US20040241342 Silicon dioxide deposition fromsilane and H2O2 or water oxidizer; greater density of ions having a single oxygen atom; improved redeposition properties; simultaneous high density plasma chemical vapor deposition and sputtering
12/02/2004	US20040241341 Method for forming silicon oxide layer
12/02/2004	US20040241322 Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer
12/02/2004	US20040241321 Ruthenium layer formation for copper film deposition
12/02/2004	US20040241176 Method of producing membrane vesicles
12/02/2004	US20040240820 Silicon-oxycarbide high index contrast, low-loss optical waveguides and integrated thermo-optic devices
12/02/2004	US20040238872 Method for manufacturing oxide film having high dielectric constant, capacitor having dielectric film formed using the method, and method for manufacturing the same
12/02/2004	US20040238649 Thermal treatment apparatus and thermal treatment method
12/02/2004	US20040238523 Heater module for semiconductor production system
12/02/2004	US20040238490 Accurate etching without charging damage; controlling charge inflow to sparse and dense pattern portions; suppressing electric potential on gate oxide film
12/02/2004	US20040238126 Plasma processing apparatus with reduced parasitic capacity and loss in RF power
12/02/2004	US20040238124 Plasma treatment apparatus
12/02/2004	US20040238104 Apparatus and method for deposition of protective film for organic electroluminescence
12/02/2004	US20040237898 Method and installation for the densification of substrates by means of chemical bapour infiltration
12/02/2004	US20040237895 Magnetically-actuatable throttle valve
12/02/2004	US20040237894 Apparatus having high gas conductance
12/02/2004	US20040237893 Layer deposition methods
12/02/2004	US20040237892 Micromachines for delivering precursors and gases for film deposition
12/02/2004	US20040237891 Lid liner for chemical vapor deposition chamber
12/02/2004	US20040237889 Chemical gas deposition process and dry etching process and apparatus of same
12/02/2004	US20040237888 Optical monitoring system for plasma enhanced chemical vapor deposition
12/02/2004	DE19917312B4 Einrichtung zur Positionserfassung Means for detecting the position
12/02/2004	DE10320652A1 Tool, especially a cutting tool, comprising a substrate member onto which at least one layer is deposited by means of chemical vapor deposition (CVD) used in machining operations, e.g. metal cutting
12/02/2004	DE10320597A1 Verfahren und Vorrichtung zum Abscheiden von Halbleiterschichten mit zwei Prozessgasen, von denen das eine vorkonditioniert ist Method and apparatus for the separation of semiconductor layers with two process gases, of which one is preconditioned
12/02/2004	CA2526257A1 Device for area-based surface treatment of an article by electric dielectric barrier discharge
12/02/2004	CA2525823A1 A method to encapsulate phosphor via chemical vapor deposition
12/01/2004	EP1482550A2 Low dielectric constant insulating film and method of forming the same
12/01/2004	EP1482071A1 Apparatus for manufacturing semiconductor or liquid crystal
12/01/2004	EP1482070A1 Mechanical enhancer additives for low dielectric films
12/01/2004	EP1482069A1 Method for producing polycrystalline silicon germanium suitable for micromachining
12/01/2004	EP1481726A1 The combinatorial hydrothermal synthesis of novel materials
12/01/2004	EP1481117A1 Method and device for depositing semi-conductor layers
12/01/2004	EP1124729A4 Plastic container having a carbon-treated internal surface
12/01/2004	CN2659541Y Gas nozzle for underlayment processing chamber
12/01/2004	CN1551932A Susceptor with epitaxial growth control devices and epitaxial reactor using the same
12/01/2004	CN1551824A Free-standing (Al, Ga, In)N and parting method for forming same
12/01/2004	CN1551326A Anodized substrate support
12/01/2004	CN1551308A Method for forming insulated membrane with improved insulating property
12/01/2004	CN1551302A Upper electrode and plasma processing device
12/01/2004	CN1551299A Method for forming semiconductor
12/01/2004	CN1550574A Deposited film forming method and apparatus
12/01/2004	CN1550568A 制造装置和发光装置 Devices and light-emitting device manufacturing
11/2004
11/30/2004	US6825920 Method and system of determining chamber seasoning condition by optical emission
11/30/2004	US6825555 Hot plate
11/30/2004	US6825519 Selectively deposited PGO thin film and method for forming same
11/30/2004	US6825134 Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow
11/30/2004	US6825131 Method for forming dielectric thin film and dielectric thin film formed thereby
11/30/2004	US6825130 CVD of porous dielectric materials
11/30/2004	US6825129 Method for manufacturing memory device
11/30/2004	US6825126 Manufacturing method of semiconductor device and substrate processing apparatus
11/30/2004	US6825051 Plasma etch resistant coating and process
11/30/2004	US6824898 Dielectric thin film, method for making the same and electric components thereof
11/30/2004	US6824825 Method for depositing metallic nitride series thin film
11/30/2004	US6824824 Method for recycling organometallic compound for MOCVD
11/30/2004	US6824823 Overcoating tool with carbide, nitride, carbonitride of iron, cobalt , nickel, tungsten
11/30/2004	US6824816 Process for producing metal thin films by ALD
11/30/2004	US6824813 Substrate monitoring method and apparatus
11/30/2004	US6824748 Air pollution control
11/30/2004	US6823589 Flexibly suspended gas distribution manifold for plasma chamber
11/30/2004	CA2325880C Container with material coating having barrier effect and method and apparatus for making same
11/25/2004	WO2004102651A1 Ozone post-deposition treatment to remove carbon in a flowable oxide film
11/25/2004	WO2004102650A1 Plasma processing device
11/25/2004	WO2004102648A2 Reactor surface passivation through chemical deactivation
11/25/2004	WO2004101845A1 Treating device using raw material gas and reactive gas
11/25/2004	WO2004101844A1 Plasma-enhanced film deposition
11/25/2004	WO2004067800B1 Method and apparatus for cleaning a cvd chamber
11/25/2004	WO2004062341A3 Method and apparatus for layer by layer deposition of thin films
11/25/2004	WO2004044963A3 Atomic layer deposition methods
11/25/2004	WO2004041753A9 Deposition processes using group 8 (viii) metallocene precursors
11/25/2004	WO2004020689A8 Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides
11/25/2004	WO2004010462A3 Infrared thermopile detector system for semiconductor process monitoring and control
11/25/2004	US20040235405 Cast diamond tools and formation thereof by chemical vapor deposition
11/25/2004	US20040235314 Method of manufacturing semiconductor device having nitride film with improved insulating properties
11/25/2004	US20040235312 Process of cvd of hf and zr containing oxynitride films
11/25/2004	US20040235310 Process monitoring methods in a plasma processing apparatus, monitoring units, and a sample processing method using the monitoring units
11/25/2004	US20040235303 Endpoint determination of process residues in wafer-less auto clean process using optical emission spectroscopy
11/25/2004	US20040235302 Method of atomic layer deposition on plural semiconductor substrates simultaneously
11/25/2004	US20040235295 Methods for improving quality of high temperature oxide (HTO) formed from halogen-containing precursor and products thereof and apparatus thereof
11/25/2004	US20040235291 Very low dielectric constant plasma-enhanced CVD films
11/25/2004	US20040235286 Method of depositing an oxide layer on a substrate and a photovoltaic cell using said substrate
11/25/2004	US20040235278 Low-temperature, low-resistivity heavily doped P-type polysilicon deposition
11/25/2004	US20040235263 Method of improving HDP fill process
11/25/2004	US20040235254 Method of manufacturing semiconductor device
11/25/2004	US20040235191 Film forming method
11/25/2004	US20040234824 Ceramic member
11/25/2004	US20040234781 Low temperature, low-resistivity heavily doped p-type polysilicon deposition
11/25/2004	US20040234779 Fluorinated aromatic precursors
11/25/2004	US20040234736 Control of stress in metal films by controlling the temperature during film deposition
11/25/2004	US20040234705 Methods of forming coatings on gas-dispersion fixtures in chemical-vapor-deposition systems
11/25/2004	US20040234704 Carbiding, nitriding, carbonitriding, metallization; atomic- or chemical vapor deposition of nitrides, carbides, carbonitrides, metal silicon nitrides or carbides from organometallic compounds; adhesion promoter comprising compound of nitrogen, silicon, and/or carbon
11/25/2004	US20040234688 Cyclic organosilicon compounds, aliphatic organosilicon compounds, aliphatic hydrocarbon compounds, oxidizing gases, a carrier gas is reacted at conditions sufficient to deposit a low dielectric constant film on a substrate surface
11/25/2004	US20040234445 decomposition of a hydrocarbon gas in presence of catalyst

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