C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes

Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
11/2004
11/17/2004	CN1546201A Method and apparatus for exhaust gas treatment in chemical vapor deposition / chemical gas phase penetration processes
11/17/2004	CN1176245C Method for preparing rthenium or rthenium oxide film
11/17/2004	CN1176014C Process for directly synthesizing ultra-long single-wall continuous nano carbon tube
11/16/2004	US6819969 Chemical vapor deposition process and apparatus for performing the same
11/16/2004	US6818864 LED heat lamp arrays for CVD heating
11/16/2004	US6818783 Volatile precursors for deposition of metals and metal-containing films
11/16/2004	US6818570 Method of forming silicon-containing insulation film having low dielectric constant and high mechanical strength
11/16/2004	US6818566 Thermal activation of fluorine for use in a semiconductor chamber
11/16/2004	US6818557 Method of forming SiC capped copper interconnects with reduced hillock formation and improved electromigration resistance
11/16/2004	US6818517 Methods of depositing two or more layers on a substrate in situ
11/16/2004	US6818457 Semiconductor integrated circuit device and method of manufacturing the same
11/16/2004	US6818310 Silicon oxide on plastic; shutoff valve
11/16/2004	US6818250 Method for forming SIO2 by chemical vapor deposition at room temperature
11/16/2004	US6818249 Reactors, systems with reaction chambers, and methods for depositing materials onto micro-device workpieces
11/16/2004	US6818140 Low ceiling temperature process for a plasma reactor with heated source of a polymer-hardening precursor material
11/16/2004	US6818094 Reciprocating gas valve for pulsing a gas
11/16/2004	US6818068 Conveyor for treating hollow bodies comprising an advanced pressure distribution circuit
11/16/2004	US6818067 Processing chamber for atomic layer deposition processes
11/16/2004	CA2326228C Temperature regulator for a substrate in vapour deposition processes
11/16/2004	CA2303260C Plasma enhanced chemical deposition with low vapor pressure compounds
11/11/2004	WO2004097913A1 Vacuum film-forming apparatus, vacuum film-forming method and solar battery material
11/11/2004	WO2004097912A1 Substrate transfer device of thin-film forming apparatus
11/11/2004	WO2004097897A2 Methods for depositing polycrystalline films with engineered grain structures
11/11/2004	WO2004097068A2 Polymorphous materials, method for preparing same, and device comprising same
11/11/2004	WO2004097067A1 Gas evacuation device
11/11/2004	WO2004097066A1 Method and device for depositing semiconductor layers using two process gases, of which one is preconditioned
11/11/2004	WO2004097065A2 Control or modeling of a method for chemical infiltration in a vapor phase for the densification of porous substrates by carbon
11/11/2004	WO2004066944A3 Products for treating and preventing chronic diseases: eliminating the autoimmune triggers that underly chronic disease
11/11/2004	WO2004065294A8 Systems and methods for producing single-walled carbon nanotubes (swnts) on a substrate
11/11/2004	WO2003075309A3 Light source
11/11/2004	US20040224533 Method for increasing polysilicon granin size
11/11/2004	US20040224527 Atomic layer deposition methods
11/11/2004	US20040224510 Ozone post-deposition treatment to remove carbon in a flowable oxide film
11/11/2004	US20040224505 Nanolayer thick film processing system and method
11/11/2004	US20040224504 Apparatus and method for plasma enhanced monolayer processing
11/11/2004	US20040224502 Method for fabricating semiconductor device by using PECYCLE-CVD process
11/11/2004	US20040224485 Methods of forming capacitors
11/11/2004	US20040224484 Methods of growing nitride-based film using varying pulses
11/11/2004	US20040224475 Methods of manufacturing semiconductor devices having a ruthenium layer via atomic layer deposition and associated apparatus and devices
11/11/2004	US20040224171 Electrochemically roughened aluminum semiconductor chamber surfaces
11/11/2004	US20040224160 Surface-coated carbide alloy cutting tool
11/11/2004	US20040224159 cutters composed of tungsten carbide or titanium carbonitride cermets, having hard undercoating layers including titanium or zirconium carbides, nitrides, carbonitride, oxycarbides or oxycarbonitrides and alumina overcoatings
11/11/2004	US20040224095 reacting active species with oxide surface to form new exposed surface, adding nucleophile of the same general class as active species to displace said species and form densely packed layer; waterproofing
11/11/2004	US20040224091 forming collar which narrows opening and applying heat/pressure, then reflowing sealing layer; chemical/physical vapor deposition; for use in microelectronics, microelectromechanical systems
11/11/2004	US20040224090 HDP-CVD uniformity control
11/11/2004	US20040224089 atomic layer epitaxy/deposition; chemical vapor deposition
11/11/2004	US20040222383 Processing method and system
11/11/2004	US20040222188 Method of cleaning a deposition chamber and apparatus for depositing a metal on a substrate
11/11/2004	US20040221959 Anodized substrate support
11/11/2004	US20040221869 Method of removing PECVD residues of fluorinated plasma using in-situ H2 plasma
11/11/2004	US20040221816 Plasma processing apparatus
11/11/2004	US20040221809 Plasma processing apparatus
11/11/2004	US20040221808 Thin-film deposition apparatus
11/11/2004	US20040221807 Reactor surface passivation through chemical deactivation
11/11/2004	US20040221796 Electrically conductive polycrystalline diamond and particulate metal based electrodes
11/11/2004	US20040221795 Single crystal diamond prepared by CVD
11/11/2004	DE10340511B3 Production batch control method for monitoring production process quality during semiconductor element manufacture uses rotation cycle for obtaining test semiconductor discs from successive production runs
11/11/2004	DE10297447T5 Diffusionsbarriere Diffusion barrier
11/11/2004	DE10248980B4 Verfahren zur Herstellung strukturierter Schichten aus Siliziumdioxid auf senkrecht oder geneigt zu einer Substratoberfläche angeordneten Prozessflächen A process for the production of structured layers of silicon dioxide on vertical or inclined arranged to process a substrate surface areas
11/11/2004	DE102004016162A1 Verfahren zum Bilden eines Metalloxidfilmes A method of forming a metal oxide film
11/11/2004	DE10141142B4 Einrichtung zur reaktiven Plasmabehandlung von Substraten und Verfahren zur Anwendung Means for reactive plasma treatment of substrates and methods of using
11/10/2004	EP1475828A1 Cvd method and device for forming silicon-containing insulation film
11/10/2004	EP1475825A1 Processing device and processing method
11/10/2004	EP1475824A1 Plasma film forming system
11/10/2004	EP1475823A1 Heat treatment device and heat treatment method
11/10/2004	EP1475822A1 Cleaning gas and etching gas
11/10/2004	EP1475460A1 Anodized substrate support
11/10/2004	EP1475459A1 Method for modifying surface of solid material, surface-modified solid material and device for modifying surface of solid material
11/10/2004	EP1475457A2 Metal barrier film production apparatus, metal barrier film production method, metal film production method, and metal film production apparatus
11/10/2004	EP1475456A2 Metal barrier film production apparatus, metal barrier film production method, metal film production method, and metal film production apparatus
11/10/2004	EP1475455A2 Metal barrier film production apparatus, metal barrier film production method, metal film production method, and metal film production apparatus
11/10/2004	EP1475454A2 Metal barrier film production apparatus, metal barrier film production method, metal film production method, and metal film production apparatus
11/10/2004	EP1475453A2 Metal barrier film production apparatus, metal barrier film production method, metal film production method, and metal film production apparatus
11/10/2004	EP1474824A2 Group iii nitride semiconductor crystal, production method thereof and group iii nitride semiconductor epitaxial wafer
11/10/2004	EP1373130A4 Process and apparatus for the production of carbon nanotubes
11/10/2004	EP1144721B1 Material fabrication
11/10/2004	CN1545726A Copper vias in low-K technology
11/10/2004	CN1545724A Method and apparatus for forming film
11/10/2004	CN1545140A Substrate temperature measuring method
11/10/2004	CN1545130A Method for changing inclination angle of hydride gas phase transverse epitaxy GaN film
11/10/2004	CN1544688A Plasma reinforced chemical vapor deposition apparatus for transparent conductive film
11/10/2004	CN1544687A Horizontal reactor arrangement for vapor deposition
11/10/2004	CN1544686A Carbon brake disc negative pressure directional flow outward thermal gradient chemical gas phase penetration process and apparatus
11/10/2004	CN1544320A High yield, high purity and large volume carbon nanometer tube preparation method
11/10/2004	CN1544315A Unidimensional aluminium nitride nanometer structure array and its preparation method
11/10/2004	CN1175477C Plasma treatment device and plasma treatment method
11/10/2004	CN1175474C Apparatus for forming polymer continuously on surface of metal by DC plasma
11/10/2004	CN1175472C Method for producing semiconductor film and the method for producing solar energy cell using said film
11/10/2004	CN1175470C Method and apparatus for supercritical processing of multiple workpieces
11/10/2004	CN1175128C Metal compound solution and method for preparing film using same
11/10/2004	CN1175127C Microwave plasma exciter
11/10/2004	CN1175125C Protective gas shield apparatus
11/10/2004	CN1174916C Forming method for carbon nano-tube
11/09/2004	US6815824 Semiconductor device and method of manufacturing the same
11/09/2004	US6815653 Detecting material accretion and dislodging from a quartz gas distribution plate (gdp) in a plasma process chamber during semiconductor wafer processing.
11/09/2004	US6815375 Methods of forming dielectric materials and methods of processing semiconductor substrates
11/09/2004	US6815374 Method for improving thickness uniformity of deposited ozone-TEOS silicate glass layers
11/09/2004	US6815373 Use of cyclic siloxanes for hardness improvement of low k dielectric films
11/09/2004	US6815370 Plasma enhanced chemical vapor deposition apparatus and method for forming nitride layer using the same
11/09/2004	US6815362 End point determination of process residues in wafer-less auto clean process using optical emission spectroscopy

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