C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes

Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
12/2004
12/22/2004	EP1226285B1 Single crystal tungsten alloy penetrator and method of making
12/22/2004	CN1556910A System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
12/22/2004	CN1556872A Thin film-forming apparatus
12/22/2004	CN1556245A Hot wire auxiliary microwave electron rotating resonance chamical gas phase settling method and device
12/22/2004	CN1181709C Radio frequency plasma generator
12/22/2004	CN1181550C Method for mfg. capacitor of semiconductor storage element
12/22/2004	CN1181529C Method of manufacturing capacitor for semiconductor device
12/22/2004	CN1181521C Technique for making semiconductor device
12/22/2004	CN1181222C Deposit film forming apparatus
12/22/2004	CN1181221C Method and equipment for raising speed of electronic cyclotron resonance chemical vapor deposition
12/22/2004	CN1181220C Method for producing coated workpieces, uses and installation for the method
12/22/2004	CN1181219C Method for mfg. large hole diamond coating drawing die
12/22/2004	CN1181217C Method for forming PZT thin film using seed layer
12/21/2004	US6833959 Color shifting carbon-containing interference pigments
12/21/2004	US6833577 Semiconductor device
12/21/2004	US6833567 Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof
12/21/2004	US6833558 Parallel and selective growth method of carbon nanotube on the substrates for electronic-spintronic device applications
12/21/2004	US6833322 Apparatuses and methods for depositing an oxide film
12/21/2004	US6833280 Process for fabricating films of uniform properties on semiconductor devices
12/21/2004	US6833203 Thermal barrier coating utilizing a dispersion strengthened metallic bond coat
12/21/2004	US6833161 Alternately adsorbing a tungsten-containing compound and a nitrogen-containing compound on a substrate; reduced resistivity, lower concentration of fluorine
12/21/2004	US6833155 Substrate for a semiconductor device is wound in a roll form together with an interleaf before or after treatment; especially chemical vapor deposition
12/21/2004	US6833120 Gas is supplied and exhausted in the same direction of the flow of a substrate coated by plasma polymerizing
12/21/2004	US6833052 Deposition chamber and method for depositing low dielectric constant films
12/21/2004	US6833049 Apparatus for controlling the temperature of a gas distribution plate in a process reactor
12/21/2004	US6833030 Mass flow controller connected to an injection valve, an auxiliary valve connected between, an auxiliary pump connected to the auxiliary valve and a relay electrically connected to the auxiliary valve
12/21/2004	US6833024 Abatement of effluent from chemical vapor deposition processes using ligand exchange resistant metal-organic precursor solutions
12/16/2004	WO2004109821A2 Reactive deposition for electrochemical cell production
12/16/2004	WO2004109761A2 Gas distribution system
12/16/2004	WO2004109747A2 Method for producing a display dial by treating a silicon substrate
12/16/2004	WO2004108992A1 Fabricated titanium article having improved corrosion resistance
12/16/2004	WO2004108985A2 Methods for forming aluminum containing films utilizing amino aluminum precursors
12/16/2004	WO2004108980A1 Thin film forming device and thin film forming method
12/16/2004	WO2004108979A1 Thin film forming device and thin film forming method
12/16/2004	WO2004108978A2 Ultraviolet (uv) and plasma assisted metalorganic chemical vapor deposition (mocvd) system
12/16/2004	WO2004108646A1 Method for preparation of alpha, beta-unsaturated cyclic ketones by dehydrogenation of secondary allylic cyclic alcohols
12/16/2004	WO2004108589A2 Nanoparticle coated nanostructured surfaces for detection, catalysis and device applications
12/16/2004	WO2004097065A3 Control or modeling of a method for chemical infiltration in a vapor phase for the densification of porous substrates by carbon
12/16/2004	WO2004083479A3 Alcoholates of rare earth mtals a precursors for metaloxide layers or films
12/16/2004	WO2004079031A3 Chemical vapor deposition of silicon on to substrates
12/16/2004	WO2004074538A3 Foodware with multilayer stick resistant ceramic coating and method of making
12/16/2004	WO2004073893A3 Gas gate for isolating regions of differing gaseous pressure
12/16/2004	WO2004008008A3 Control of a gaseous environment in a wafer loading chamber
12/16/2004	US20040254762 Method for process control of semiconductor manufactiring equipment
12/16/2004	US20040253828 Fabrication method of semiconductor integrated circuit device
12/16/2004	US20040253824 Arrangement for monitoring a thickness of a layer depositing on a sidewall of a processing chamber
12/16/2004	US20040253815 Method for forming a conductive layer
12/16/2004	US20040253796 Method for manufacturing gallium nitride (GaN) based single crystalline substrate
12/16/2004	US20040253777 Method and apparatus for forming film
12/16/2004	US20040253746 Semiconductor storage device and method of manufacturing the same
12/16/2004	US20040253451 Has high barrier properties and a good transparency; a laminated material using the film; a packaging container, and an image display medium; water repellent layer made of silicon oxide carbide
12/16/2004	US20040253446 Provide onto a hard tool body a wear resistant coating comprising a layer consisting of alpha -Al2O3 deposited by chemical vapor deposition (CVD) at a temperature (T) below 800 degrees C
12/16/2004	US20040253378 Stress reduction of SIOC low k film by addition of alkylenes to OMCTS based processes
12/16/2004	US20040253377 Batch and continuous CVI densification furnace
12/16/2004	US20040253374 Within reactor containing carrier gas (helium, nitrogen, and/or argon) and oxidative gas (air, oxygen, carbon dioxide, and/or hydrogen peroxide) for uniform surface treatment
12/16/2004	US20040251553 Semiconductor device and manufacturing method thereof
12/16/2004	US20040251550 Semiconductor device and method of manufacturing the same
12/16/2004	US20040251312 Coatings for use in fuel injector components
12/16/2004	US20040250776 Sample-setting moving stage, manufacturing apparatus for circuit pattern, and inspection apparatus for circuit pattern
12/16/2004	US20040250775 Cvd apparatus and method of cleaning the cvd apparatus
12/16/2004	US20040250773 Semiconductor film formation device
12/16/2004	US20040250772 Cylinder for thermal processing chamber
12/16/2004	US20040250770 Performance evaluation method for plasma processing apparatus for continuously maintaining a desired performance level
12/16/2004	US20040250769 Pulsed laser deposition for mass production
12/16/2004	US20040250767 Method and apparatus for coating a substrate using combustion chemical vapor deposition
12/16/2004	US20040250766 Hybrid ball-lock attachment apparatus
12/16/2004	US20040250765 Processing apparatus
12/16/2004	US20040250764 Method and apparatus for production of high purity silicon
12/16/2004	US20040250763 Fountain cathode for large area plasma deposition
12/16/2004	CA2528107A1 Fabricated titanium article having improved corrosion resistance
12/16/2004	CA2527732A1 Ultraviolet (uv) and plasma assisted metalorganic chemical vapor deposition (mocvd) system
12/15/2004	EP1486695A1 High friction sliding member
12/15/2004	EP1486584A2 Method for depositing a barrier coating on a plastic substrate
12/15/2004	EP1485518A1 Device for depositing thin layers on a substrate
12/15/2004	EP1485517A1 System for vacuum metallization of objects treated in batches
12/15/2004	EP1485515A2 Evaluation of chamber components having textured coatings chamber components
12/15/2004	EP1485513A2 Ald method and apparatus
12/15/2004	EP1455918A4 Generation, distribution, and use of molecular fluorine within a fabrication facility
12/15/2004	EP1399384B1 Method for the selective production of ordered carbon nanotubes in a fluidised bed
12/15/2004	EP1330846A4 Electrode and electron emission applications for n-type doped nanocrystalline materials
12/15/2004	EP1144913A4 Burner manifold apparatus for use in a chemical vapor deposition process
12/15/2004	EP1105549A4 High throughput organometallic vapor phase epitaxy (omvpe) apparatus
12/15/2004	EP0988407B9 Method for producing coated workpieces, which are coated with an epitactic layer
12/15/2004	CN1555569A Substrate support and method of fabricating the same
12/15/2004	CN1555497A Optical and optoelectronic articles
12/15/2004	CN1555424A Process for controlling thin film uniformity and products produced thereby
12/15/2004	CN1555073A Method for improving guality of GaMnN ferromagnetic film crystal prepared via hydride vapour phase epitaxy process
12/15/2004	CN1180125C MOCVD equipment and process for growing ZnO film
12/15/2004	CN1179922C Method for producing golden ceramic products
12/14/2004	US6831823 Method and apparatus for chucking a substrate
12/14/2004	US6831785 Color shifting carbon-containing interference pigments
12/14/2004	US6831324 Method of producing rough polysilicon by the use of pulsed plasma chemical vapor deposition and products produced by the same
12/14/2004	US6831315 Conformal thin films over textured capacitor electrodes
12/14/2004	US6831004 Formation of boride barrier layers using chemisorption techniques
12/14/2004	US6830838 High step coverage metal layers; reduced device contact resistance
12/14/2004	US6830820 Chemical vapor deposition of titanium
12/14/2004	US6830786 Silicon oxide film, method of forming the silicon oxide film, and apparatus for depositing the silicon oxide film
12/14/2004	US6830653 Generating plasma in vacuum; controlling distribution
12/14/2004	US6830652 Microwave plasma processing apparatus
12/14/2004	US6830651 Load port capable of coping with different types of cassette containing substrates to be processed

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