Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
01/2005
01/27/2005US20050019481 Low pressure; in a first step reactive fluid is injected at a pressure higher than that of the second step; especially for preparing a hydrogenated amorphous carbon coating from acetylene
01/27/2005US20050019166 Methods of handling wind turbine blades and mounting said blades on a wind turbine, system and gripping unit for handling a wind turbine blade
01/27/2005US20050019026 Delivery systems for efficient vaporization of precursor source material
01/27/2005US20050017323 Semicoductor device containing an ultra thin dielectric film or dielectric layer
01/27/2005US20050017168 Residual gas analyzer of semiconductor device manufacturing equipment
01/27/2005US20050017100 Nozzle plate member for supplying fluids in dispersed manner and manufacturing method of the same
01/27/2005US20050016984 Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
01/27/2005US20050016958 Cleaning process and apparatus for silicate materials
01/27/2005US20050016956 Methods and apparatus for cycle time improvements for atomic layer deposition
01/27/2005US20050016860 coating dielectric polymers substrates with metallic or electroconductive backing layers and electrochemical polymerization using electroconductive monomers or mixture of monomers and activators, to form terminals used in direct methanol fuel cells
01/27/2005US20050016839 Reactive deposition for electrochemical cell production
01/27/2005US20050016687 Single-substrate-heat-processing apparatus for performing reformation and crystallization
01/27/2005US20050016568 Apparatus and method for cleaning of semiconductor device manufacturing equipment
01/27/2005US20050016471 Substrate temperature control in an ALD reactor
01/27/2005US20050016470 Susceptor and deposition apparatus including the same
01/27/2005US20050016469 Downward mechanism for support pins
01/27/2005US20050016467 System and method for dry chamber temperature control
01/27/2005US20050016466 Susceptor with raised tabs for semiconductor wafer processing
01/27/2005US20050016461 Thermal physical vapor deposition source using pellets of organic material for making oled displays
01/27/2005US20050016459 Method of depositing coating by plasma; device for implementing the method and coating obtained by said method
01/27/2005US20050016458 Apparatus for producing thin-film electrolyte
01/27/2005US20050016457 Plasma film forming system
01/27/2005US20050016455 Surface treatment system and method
01/27/2005US20050016454 Dual substrate loadlock process equipment
01/27/2005US20050016453 Collection of unused precursors in ALD
01/27/2005US20050016452 Gas supply unit and semiconductor device manufacturing apparatus using the same
01/27/2005US20050016445 Method for producing diamond film
01/27/2005US20050016444 Method for diamond coating substrates
01/27/2005US20050016328 Method of manufacturing silver flake
01/27/2005DE10331608A1 Verfahren zum Beschichten und/oder partiellen Umspritzen von flexiblem langgestrecktem Gut A method for coating and / or partial encapsulation of flexible elongate
01/27/2005DE10330394A1 Verfahren zur Herstellung oberflächenbeschichteter nanoskaliger Teilchen durch Polymerbeschichtung in der Gasphase A process for producing surface-coated polymer coating nanoscale particles is carried out in the gas phase
01/27/2005DE10228898B4 Vorrichtung und Verfahren für CVD-Behandlungen Apparatus and method for CVD treatments
01/27/2005CA2527870A1 Ion beam-assisted high-temperature superconductor (hts) deposition for thick film tape
01/26/2005EP1500718A1 Method for producing diamond film
01/26/2005EP1500634A1 Glass substrate and process for producing the same
01/26/2005EP1500600A1 Plastic containers coated on the inner surface and process for production thereof
01/26/2005EP1500450A1 Method for joining a metal foam to a metal part
01/26/2005EP1060287B1 Method of depositing silicon with high step coverage
01/26/2005CN2674647Y Fluid controller and heat treater
01/26/2005CN1572016A Method and apparatus for chemical vapor deposition capable of preventing contamination and enhancing film growth rate
01/26/2005CN1571863A Atomic layer deposition apparatus and process
01/26/2005CN1571790A Improved precursors for chemical vapour deposition
01/26/2005CN1571726A Optical materials and optical devices
01/26/2005CN1571166A Semiconductor device and method of manufacturing the same
01/26/2005CN1571124A Method for forming metal oxide on surface of substrate
01/26/2005CN1570204A Film-forming method, semiconductor device, method of manufacturing semiconductor device, display device and method of manufacturing display device
01/26/2005CN1570203A Oxide coated cutting tool
01/26/2005CN1570202A Layer with controlled grain size and morphology for enhanced wear resistance
01/26/2005CN1569751A Coating with controlled grain size and morphology for enhanced wear resistance and toughness
01/26/2005CN1186213C Substrate treatment method
01/25/2005US6847097 Glass substrate assembly, semiconductor device and method of heat-treating glass substrate
01/25/2005US6847015 Heat treatment apparatus and controller for heat treatment apparatus and control method for heat treatment apparatus
01/25/2005US6846757 Dielectric layer for a semiconductor device and method of producing the same
01/25/2005US6846743 Method for vapor deposition of a metal compound film
01/25/2005US6846742 Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
01/25/2005US6846739 MOCVD process using ozone as a reactant to deposit a metal oxide barrier layer
01/25/2005US6846728 Semiconductor thin film, semiconductor device employing the same, methods for manufacturing the same and device for manufacturing a semiconductor thin film
01/25/2005US6846726 Silicon parts having reduced metallic impurity concentration for plasma reaction chambers
01/25/2005US6846521 Apparatus and method for forming deposited film
01/25/2005US6846516 Vapor deposit cycles; pulsation; miniaturized integrated circuit
01/25/2005US6846515 Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants
01/25/2005US6846514 Vapor deposition; positioning fluid flow nozzle; reducing leakage; sealing gas intake ports
01/25/2005US6846513 Method for fabricating a silicon thin-film
01/25/2005US6846424 Plasma-assisted dry etching of noble metal-based materials
01/25/2005US6846391 Process for depositing F-doped silica glass in high aspect ratio structures
01/25/2005US6846364 Heater block having catalyst spray means
01/25/2005US6846149 Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system
01/25/2005US6845734 Deposition apparatuses configured for utilizing phased microwave radiation
01/25/2005US6845732 Gas heating apparatus for chemical vapor deposition process and semiconductor device fabrication method using same
01/25/2005CA2208718C Object coated with carbon film and method of manufacturing the same
01/20/2005WO2005006426A1 High-pressure heat treatment apparatus
01/20/2005WO2005006400A2 Substrate support having dynamic temperature control
01/20/2005WO2005006398A2 Apparatus and method for controlled application of reactive vapors to produce thin films and coatings
01/20/2005WO2005006386A2 System and method for inductive coupling of an expanding thermal plasma
01/20/2005WO2005006362A2 Methods for the control of flatness and electron mobility of diamond coated silicon and structures formed thereby
01/20/2005WO2005006350A2 Apparatus for consecutive deposition of high-temperature superconducting (hts) buffer layers
01/20/2005WO2005005686A1 Method for forming metal oxide coating film and vapor deposition apparatus
01/20/2005WO2005005337A1 Process for chemical vapor deposition of a nitrogen-doped titanium oxide coating
01/20/2005WO2004094689A3 Volatile copper(i) complexes for deposition of copper films by atomic layer deposition
01/20/2005WO2004079043A3 Susceptor apparatus for inverted type mocvd reactor
01/20/2005WO2004045248A3 Barrier coatings and methods in discharge lamps
01/20/2005WO2003103017A3 Method and system of determining chamber seasoning condition by optical emission
01/20/2005US20050014391 Deposition method, method of manufacturing semiconductor device, and semiconductor device
01/20/2005US20050014366 MOCVD apparatus and method
01/20/2005US20050014365 Methods of forming cobalt layers for semiconductor devices
01/20/2005US20050013995 Sr2ReSbO6 dielectric substrate
01/20/2005US20050013937 Thermal gradient enhanced CVD deposition at low pressure
01/20/2005US20050013936 low pressure plasma enhanced chemical vapor deposition (PECVD) of a high strength dielectric film from diethoxymethyloxiranylsilane and/or diethoxyglycidylmethylsilane; more Si-C bonds and fewer Si-H bonds increases strength; peroxidation of the corresponding -vinyl- or -glycidyl silanes; semiconductors
01/20/2005US20050013762 Carbon nanotube manufacturing method
01/20/2005US20050012099 Fabrication of crystalline materials over substrates
01/20/2005US20050012089 Metal organic chemical vapor deposition and atomic layer deposition of metal oxynitride and metal silicon oxynitride
01/20/2005US20050011974 Methods of operating a liquid vaporizer
01/20/2005US20050011861 Method and apparatus of forming alignment film
01/20/2005US20050011767 Tract-type magnetic recording media; convex, concave pattern in resin on support overcoated with metal layer
01/20/2005US20050011752 Spin coating film for photoresist; vacuum, vapor deposition; evaporation; sputtering; edge cleaning; plasma etching; masking
01/20/2005US20050011747 Apparatus for consecutive deposition of high-temperature superconducting (HTS) buffer layers
01/20/2005US20050011459 Chemical vapor deposition reactor
01/20/2005US20050011458 Wafer holder with peripheral lift ring
01/20/2005US20050011457 Controlling the temperature of a substrate in a film deposition apparatus
01/20/2005US20050011456 Processing apparatus and gas discharge suppressing member