Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
01/2005
01/20/2005US20050011455 Plasma process apparatus and its processor
01/20/2005US20050011453 Plasma processing method and apparatus
01/20/2005US20050011451 Impedance matching network with termination of secondary RF frequencies
01/20/2005US20050011450 Plasma treatment apparatus, matching box, impedance matching device, and coupler
01/20/2005US20050011449 Gas delivery system for deposition processes, and methods of using same
01/20/2005US20050011448 Gasification monitor, method for detecting mist, film forming method and film forming apparatus
01/20/2005US20050011447 Method and apparatus for delivering process gas to a process chamber
01/20/2005US20050011446 Method and apparatus for removing external components from a process chamber without compromising process vacuum
01/20/2005US20050011445 Apparatus and method for in-situ cleaning of a throttle valve in a CVD system
01/20/2005US20050011444 Vapor deposition systems having separate portions configured for purging using different materials and methods of operating same
01/20/2005US20050011442 Plasma processing material reclamation and reuse
01/20/2005US20050011441 Processing system, processing method and mounting member
01/20/2005US20050011436 Chemical vapor deposition reactor
01/20/2005US20050011435 Method for depositing in particular crystalline layers
01/20/2005US20050011434 Silicon crystallization using self-assembled monolayers
01/20/2005US20050011351 Pressure control apparatus and method of establishing a desired level or pressure within at least one processing chamber
01/20/2005DE10338290B3 Container residual contents weighing device for container supplying chemical vapor deposition reactor for semiconductor chip or electronic component manufacture uses weighing cells mounted on platform supporting container
01/20/2005DE10328842A1 Beschichtete Halbleiterscheibe und Verfahren und Vorrichtung zur Herstellung der Halbleiterscheibe Coated wafer and method and apparatus for producing the semiconductor wafer
01/20/2005DE10322696B3 Plasma-assisted treatment of given substrate surface area, e.g. for structurizing or coating metal, alloy, semiconductor, insulator or dielectric, uses insulator with opening, to form discharge gap, between electrode and substrate
01/19/2005EP1498910A2 Method for coating and/or partial overmoulding of flexible long products.
01/19/2005EP1498654A1 Device for the treatment of workpieces
01/19/2005EP1497849A1 Silicon parts for plasma reaction chambers
01/19/2005EP1497481A2 Method and device for depositing thin layers on a substrate in a height-adjustable process chamber
01/19/2005EP1497480A1 Thick films of yba sb 2 /sb cu sb 3 /sb o sb 7-y /sb and preparation method thereof
01/19/2005EP1497476A1 Process of masking cooling holes of a gas turbine component
01/19/2005EP1497226A2 Method for producing nitrides
01/19/2005EP1419282B1 Method for producing a fluorescent material layer
01/19/2005EP1153155B1 Planetary system workpiece support and method for surface treatment of workpieces
01/19/2005EP0801606B1 Method for treating a surface
01/19/2005CN2672082Y Heater in hot lamp filament chemical gas phase deposition device
01/19/2005CN1568379A Methods for the production of components and ultra high vacuum cvd reactor
01/19/2005CN1568376A Method of depositing a material layer
01/19/2005CN1566023A Ceramic-metal and ceramic-ceramic light composite material and manufacturing method thereof
01/19/2005CN1565710A Apparatus and method for point-of-use treatment of effluent gas streams
01/19/2005CN1185694C Method and apparatus for forming film on substrate
01/19/2005CN1185693C Method for forming low K value etching barrier and a semiconductor device
01/19/2005CN1185365C Method for producing ceramic and apparatus for producing the same, semiconductor device and piezoelectric element
01/19/2005CN1185241C Organic metal compound for chemical vapor deposition and its prepn and chemical vapor deposition process of ruthenium film or ruthenium compound film
01/19/2005CN1185037C ESRF coolant degassing process
01/18/2005US6844627 Metal film semiconductor device and a method for forming the same
01/18/2005US6844528 Hot wall rapid thermal processor
01/18/2005US6844527 Multi-thermal zone shielding apparatus
01/18/2005US6844273 Precleaning method of precleaning a silicon nitride film forming system
01/18/2005US6844271 Process of CVD of Hf and Zr containing oxynitride films
01/18/2005US6844261 Method of forming ruthenium and ruthenium oxide films on a semiconductor structure
01/18/2005US6844260 Insitu post atomic layer deposition destruction of active species
01/18/2005US6844234 Semiconductor device and method for manufacturing semiconductor device
01/18/2005US6844075 Silicon bonding layer, tantalum or niobium aluminate inter-mediate layer resistant to solid state subsurface reactions and topcoat inert to reactions with silica at high tempera-tures; gas turbine engines, heat exchangers
01/18/2005US6844074 Quartz layer; vibrators, oscillators, high frequency filter surface acoustic wave elements, optical waveguides, semicon-ductors; atmospheric pressure vapor phase epitaxial deposited silicate on gallium nitride or zinc oxide buffered substrate
01/18/2005US6844070 Low-temperature plasma deposited hydrogenated amorphous germanium carbon abrasion-resistant coatings
01/18/2005US6844068 Slidably movable member and method of producing same
01/18/2005US6843882 Gas flow control in a wafer processing system having multiple chambers for performing same process
01/18/2005US6843881 Detecting chemiluminescent radiation in the cleaning of a substrate processing chamber
01/18/2005US6843858 Method of cleaning a semiconductor processing chamber
01/18/2005US6843842 Glass coating agent and method for coating glass material using the same
01/18/2005US6843830 Abatement system targeting a by-pass effluent stream of a semiconductor process tool
01/18/2005US6843809 Vacuum/purge operation of loadlock chamber and method of transferring a wafer using said operation
01/18/2005US6843264 Multi-phase pressure control valve for process chamber
01/18/2005US6843258 Converting a non-cleaning feed gas to a cleaning gas by heat, microwave, plasma or electric energy activation in a remote location and then delivering it to process chamber for cleaning
01/18/2005US6843201 Temperature control for single substrate semiconductor processing reactor
01/13/2005WO2005004221A2 Low-k-dielectric material
01/13/2005WO2005004219A1 Pressure reduction process device, pressure reduction process method, and pressure regulation valve
01/13/2005WO2005004215A1 Substrate processing system
01/13/2005WO2005004214A1 Heat treatment apparatus and method of calibrating the apparatus
01/13/2005WO2005003406A2 Apparatus and method for chemical source vapor pressure control
01/13/2005WO2005003405A2 Method for producing surface-coated nanoscale particles by polymer-coating in the gas phase
01/13/2005WO2005003404A2 Composite refractory metal carbide coating on a substrate and method for making thereof
01/13/2005WO2005003403A1 Film forming method and film forming device using plasma cvd
01/13/2005WO2005003402A2 Hydrogen sulfide injection method for phosphor deposition
01/13/2005WO2005002979A2 Canister guard
01/13/2005WO2004079814A3 Modulated/composited cvd low-k films with improved mechanical and electrical properties for nanoelectronic devices
01/13/2005WO2004070078B1 METHOD OF FORMING A Ta2O5 COMPRISING LAYER
01/13/2005WO2004054047A3 Optical uses of diamondoid-containing materials
01/13/2005WO2004027112A3 An apparatus for the deposition of high dielectric constant films
01/13/2005WO2004008054A9 Variable heater element for low to high temperature ranges
01/13/2005WO2004007800A9 Thermal processing apparatus and method for evacuating a process chamber
01/13/2005US20050009372 Dielectric material forming methods and enhanced dielectric materials
01/13/2005US20050009371 System and method for forming a gate dielectric
01/13/2005US20050009370 Composite dielectric forming methods and composite dielectrics
01/13/2005US20050009369 Methods of forming a multi-layered structure using an atomic layer deposition process and methods of forming a capacitor of an integrated circuit device
01/13/2005US20050009368 Methods of forming a phosphorus doped silicon dioxide comprising layer, and methods of forming trench isolation in the fabrication of integrated circuitry
01/13/2005US20050009367 Novel method to increase fluorine stability to improve gap fill ability and reduce k value of fluorine silicate glass (FSG) film
01/13/2005US20050009364 Semiconductor processing methods of chemical vapor depositing SiO2 on a substrate
01/13/2005US20050009362 Method for forming dielectric thin film and dielectric thin film formed thereby
01/13/2005US20050009361 Methods and apparatus for forming a high dielectric film and the dielectric film formed thereby
01/13/2005US20050009347 Method and apparatus for measuring electron density of plasma and plasma processing apparatus
01/13/2005US20050009336 Metal deposition apparatus used in fabrication of semiconductor devices and methods of forming metal layers using the same
01/13/2005US20050009335 Apparatuses for treating pluralities of discrete semiconductor substrates; and methods for treating pluralities of discrete semiconductor substrates
01/13/2005US20050009325 Atomic layer deposition of barrier materials
01/13/2005US20050009309 Plasma CVD method
01/13/2005US20050009266 Systems and methods for forming refractory metal oxide layers
01/13/2005US20050009221 Method for manufacturing nitride film including high-resistivity GaN layer and epitaxial substrate manufactured by the method
01/13/2005US20050008871 surface treatment with release agents; activation with plasma
01/13/2005US20050008799 Solid organometallic compound-filled container and filling method thereof
01/13/2005US20050008790 Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology
01/13/2005US20050008781 Using organoic metallic compound of titanium, zirconium, hafnium, or lanthanum
01/13/2005US20050008780 Vapor deposition of interior hollow surfaces; using organoaluminum compound; process control, uniformity
01/13/2005US20050008779 Vapor deposition cycles; pulsation; miniaturized integrated circuits
01/13/2005US20050008775 Method of forming dielectric optical thin film
01/13/2005US20050008772 System and method of producing thin-film electrolyte