Patents
Sitemap › C23 - Coating metallic material; Coating material with metallic material; Chemical surface treatment; Diffusion treatment of metallic material; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general; Inhibiting corrosion of metallic material or incrustation in general › C23C - Coating metallic material; Coating material with metallic material; Surface treatment of metallic material by diffusion into the surface, by chemical conversion or substitution; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general › C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes
Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
04/2005
04/05/2005US6875279 Single reactor, multi-pressure chemical vapor deposition for semiconductor devices
04/05/2005US6875273 Method and system for manufacturing III-V Group compound semiconductor and III-V Group compound semiconductor
04/05/2005US6875272 Method for preparing GaN based compound semiconductor crystal
04/05/2005US6875271 Simultaneous cyclical deposition in different processing regions
04/05/2005US6874770 High flow rate bubbler system and method
03/2005
03/31/2005WO2005029566A1 Process for producing semiconductor device and substrate treating apparatus
03/31/2005WO2005029565A1 Production of insulating film with low dielectric constant
03/31/2005WO2005029542A2 Apparatus and method for point-of-use treatment of effluent gas streams
03/31/2005WO2005029538A2 A plasma generating apparatus and an alignment process for liquid crystal displays using the apparatus
03/31/2005WO2005028704A1 Metallization of substrate (s) by a liquid/vapor deposition process
03/31/2005WO2005028703A1 Film-forming apparatus and film-forming method
03/31/2005WO2005028702A2 Precursor delivery system
03/31/2005WO2005028701A2 Methods and apparatus for controlling formation of deposits in a deposition system and deposition systems and methods including the same
03/31/2005WO2005028390A1 Method for producing substrates comprising temperature-resistant protective coatings
03/31/2005WO2005028125A1 Anticorrosion coating
03/31/2005WO2005017950A3 Organoiridium compound, process for producing the same, and process for producing film
03/31/2005WO2004086844A3 Multilayer substrate implanted with a low dose
03/31/2005WO2004082010A3 Method of improving interlayer adhesion
03/31/2005US20050070128 Post-deposition treatment to enhance properties of Si-O-C low K films
03/31/2005US20050070126 System and method for forming multi-component dielectric films
03/31/2005US20050070123 Method for forming a thin film and method for fabricating a semiconductor device
03/31/2005US20050070121 Variable temperature and dose atomic layer deposition
03/31/2005US20050070100 Low-pressure deposition of metal layers from metal-carbonyl precursors
03/31/2005US20050070079 Method to control the interfacial layer for deposition of high dielectric constant films
03/31/2005US20050070063 High performance MIS capacitor with HfO2 dielectric
03/31/2005US20050069709 Diamond coated article and method of its production
03/31/2005US20050069643 MOCVD selective deposition of C-axis oriented PB5GE3O11 thin films on In2O3 oxides
03/31/2005US20050069642 Method of forming aluminide diffusion coatings
03/31/2005US20050069641 Method for depositing metal layers using sequential flow deposition
03/31/2005US20050069632 Exposing the substrate to a reducing gas while exposing it to pulses of a metal-carbonyl precursor gas until a metal layer with desired thickness is formed
03/31/2005US20050066993 Thin film forming apparatus and method of cleaning the same
03/31/2005US20050066899 Method for depositing a film using a charged particle beam, method for performing selective etching using the same, and charged particle beam equipment therefor
03/31/2005US20050066898 Voltage non-uniformity compensation method for high frequency plasma reactor for the treatment of rectangular large area substrates
03/31/2005US20050066897 System, method and aperture for oblique deposition
03/31/2005US20050066895 CVD of PtRh with good adhesion and morphology
03/31/2005US20050066894 Method and apparatus for preparing vaporized reactants for chemical vapor deposition
03/31/2005US20050066893 Safe liquid source containers
03/31/2005US20050066892 Deposition of silicon-containing films from hexachlorodisilane
03/31/2005US20050066882 Method for forming ultra-high strength elastic diamond like carbon structure
03/31/2005DE10340916A1 Verfahren und Vorrichtung zur Handhabung von Werkstücken Method and apparatus for handling workpieces
03/31/2005DE10340703A1 Device for vacuum coating substrates used in the production of optoelectronic components comprises a falling and ejecting path for the substrates, and a unit for vacuum coating the substrates during falling and ejecting along the path
03/31/2005DE10339988A1 Verfahren zur Herstellung einer TEOS-Deckschicht bei geringer Temperatur und reduzierter Abscheiderate A process for the preparation of a TEOS cap layer at a low temperature and reduced deposition rate
03/30/2005EP1519101A2 Purgeable container
03/30/2005EP1518940A1 Thin film-forming apparatus
03/30/2005EP1518824A1 sp3 BOND BORON NITRIDE EMITTING LIGHT IN ULTRAVIOLET REGION, ITS PRODUCING METHOD, AND FUNCTIONAL MATERIAL USING SAME
03/30/2005EP1518263A1 Hafnium-aluminum oxide dielectric films
03/30/2005EP1518256A1 Device for production of a plasma sheet
03/30/2005EP1518255A2 Thermal sprayed yttria-containing coating for plasma reactor
03/30/2005EP1296933B1 Self-reducible copper(ii) source reagents for chemical vapor deposition of copper metal
03/30/2005EP1034319B1 Method for depositing fine-grained alumina coatings on cutting tools
03/30/2005EP1018160A4 Hydrogenated oxidized silicon carbon material
03/30/2005EP0953066B1 Method of filling gaps with INDUCTIVELY COUPLED PLASMA CVD
03/30/2005EP0850323B1 Method and apparatus for cold wall chemical vapor deposition
03/30/2005CN1602543A Plasma processor
03/30/2005CN1602541A Valve unit and heat treatment system
03/30/2005CN1602370A Plasma chamber insert ring
03/30/2005CN1601607A Method for depositing a thin film adhesion layer
03/30/2005CN1600898A Thermal gradient chemical vapor deposition method for preparing carbon/carbon composite material
03/30/2005CN1600897A Reactor for thin film deposition
03/29/2005US6872908 Susceptor with built-in electrode and manufacturing method therefor
03/29/2005US6872637 Opaque low resistivity silicon carbide
03/29/2005US6872636 Method for fabricating a semiconductor device
03/29/2005US6872473 Panel display device and method for forming protective layer within the same
03/29/2005US6872429 Deposition of tungsten nitride using plasma pretreatment in a chemical vapor deposition chamber
03/29/2005US6872428 Apparatus and method for large area chemical vapor deposition using multiple expanding thermal plasma generators
03/29/2005US6872421 Atomic layer deposition method
03/29/2005US6872420 Methods for preparing ruthenium and osmium compounds and films
03/29/2005US6872419 Method or process for producing PZT films at low substrate temperatures by chemical vapor deposition
03/29/2005US6872323 In situ plasma process to remove fluorine residues from the interior surfaces of a CVD reactor
03/29/2005US6872289 Forming plasma in space facing substrate surface; imposing pulse voltage of lower frequency than the oscillation frequency of plasma ions on substrate causing thin film to be produced on substrate
03/29/2005US6872259 Method of and apparatus for tunable gas injection in a plasma processing system
03/29/2005US6872258 Shower head of a wafer treatment apparatus having a gap controller
03/29/2005US6872112 Method of processing substrate, method of forming film, and method and apparatus for manufacturing electron source
03/29/2005US6871700 Thermal flux regulator
03/29/2005US6871528 Method of producing a branched carbon nanotube for use with an atomic force microscope
03/24/2005WO2005027189A2 Formation of a metal-containing film by sequential gas exposure in a batch type processing system
03/24/2005WO2005026409A2 Replaceable plate expanded thermal plasma apparatus and method
03/24/2005WO2005026408A2 Methods of treating components of a deposition apparatus to form particle traps, and such components having particle traps thereon
03/24/2005WO2005026401A2 Method and device for depositing layers using non-continuous injection
03/24/2005WO2005026299A2 Lubricated part having partial hard coating allowing reduced amounts of antiwear additive
03/24/2005WO2004109821A3 Reactive deposition for electrochemical cell production
03/24/2005WO2004102648A3 Reactor surface passivation through chemical deactivation
03/24/2005WO2004084280A3 Processing system and method for treating a substrate
03/24/2005WO2004045248B1 Barrier coatings and methods in discharge lamps
03/24/2005WO2003088326A3 Method of loading a wafer onto a wafer holder to reduce thermal shock
03/24/2005US20050065358 Hafnium-containing material for film formation, method for producing the same, and method for producing hafnium-containing thin film using the same
03/24/2005US20050065028 Catalytic nanoporous membranes
03/24/2005US20050064730 Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill
03/24/2005US20050064729 Methods of filling gaps and methods of depositing materials using high density plasma chemical vapor deposition
03/24/2005US20050064725 Atomic layer deposition methods, and methods of forming materials over semiconductor substrates
03/24/2005US20050064724 Method and apparatus for forming low permittivity film and electronic device using the film
03/24/2005US20050064684 Process for deposition of semiconductor films
03/24/2005US20050064605 Methods for forming a ferroelectric layer and capacitor and FRAM using the same
03/24/2005US20050064298 Multilayer coatings for EUV mask substrates
03/24/2005US20050064248 Cerium oxide containing ceramic components and coatings in semiconductor processing equipment and methods of manufacture thereof
03/24/2005US20050064247 Composite refractory metal carbide coating on a substrate and method for making thereof
03/24/2005US20050064213 a ceramic layer disposed on the substrate surface in a manner that provides the ceramic layer with a microstructure characterized by multiple vertical and horizontal gaps, and sintering resistance material with specific morphology disposed in gaps
03/24/2005US20050064211 Metallization of substrate(s) by a liquid/vapor deposition process
03/24/2005US20050064207 System and method for forming multi-component dielectric films
03/24/2005US20050064197 Graded material and method for synthesis thereof and method for processing thereof
1 ... 407 408 409 410 411 412 413 414 415 416 417 418 419 420 421 422 423 424 425 426 427 ... 719