Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
03/2005
03/24/2005US20050064158 Noncatalytically forming a nanowire on a substrate from an organometallic vapor without any type of reducing agent; use of Copper (ethylacetoacetate)trialkyl phosphite as copper precursor for example; integrated circuits
03/24/2005US20050064098 thin metal films by atomic layer deposition: tungsten nucleation layer over a silicon wafer; copper film from CuCl and triethylboron; vapor phase pulses in inert gas
03/24/2005US20050064097 Method of forming a diamond coating on an iron-based substrate and use of such an iron-based substrate for hosting a CVD diamond coating
03/24/2005US20050063448 Apparatus and method for thermal processing of substrate
03/24/2005US20050061780 Wiring repair apparatus
03/24/2005US20050061443 Plasma processing apparatus and system, performance validation system and inspection method therefor
03/24/2005US20050061442 Plasma treatment apparatus and control method thereof
03/24/2005US20050061440 Gas reaction chamber system having gas supply apparatus
03/24/2005US20050061251 Apparatus and method for metal plasma immersion ion implantation and metal plasma immersion ion deposition
03/24/2005US20050061249 Carbon nanotube manufacturing apparatus and method, and gas decomposer for use in the manufacturing apparatus and method
03/24/2005US20050061248 Substrate processing apparatus
03/24/2005US20050061246 Conveyor device and film formation apparatus for a flexible substrate
03/24/2005US20050061245 Chemical vapor deposition apparatus
03/24/2005US20050061243 Systems and methods for depositing material onto microfeature workpieces in reaction chambers
03/24/2005US20050061234 Atomic layer deposition methods of forming silicon dioxide comprising layers
03/24/2005US20050061153 Method and apparatus for cleaning a gas
03/24/2005US20050061150 Process byproduct trap, method of use, and system including same
03/24/2005US20050061036 Burner for a vapour deposition process
03/24/2005US20050061024 Plasma polymerization enhancement of surface of metal for use in refrigerating and air conditioning
03/24/2005DE102004026746A1 Production of a thin film or powder array by liquid source misted chemical deposition comprises producing two or more types of metal precursor liquids; producing droplets; depositing the droplets on a substrate; and thermo-processing
03/24/2005DE10115394B4 Maschinenbauteil und/oder verfahrenstechnische Anlage mit einem Hohlraum und Reinigungsverfahren hierfür Machine component and / or process plant having a cavity and cleaning method therefor
03/23/2005EP1516941A1 Rotary type mass-producing cvd film forming device and metod of forming cvd film on surface in plastic conteiner
03/23/2005EP1516350A2 Plasma processor with electrode simultaneously responsive to plural frequencies
03/23/2005EP1516075A1 Surface treatment system and method
03/23/2005EP1515976A1 Dicopper(i)oxalate complexes for use as precursor substances in metallic copper deposition
03/23/2005EP1515835A1 Honeycomb-shaped carbon element
03/23/2005EP1515700A2 Controlled alignment of catalytically grown nanostructures in a large-scale synthesis process
03/23/2005EP1444380B1 Gas delivery apparatus for atomic layer deposition
03/23/2005EP1410433B1 Support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices
03/23/2005EP1017510B1 Method and apparatus for gas phase coating complex internal surfaces of hollow articles
03/23/2005CN2687138Y Dual-layer medium barrier discharge plasma reactor
03/23/2005CN1599949A Interconnects with improved barrier layer adhesion
03/23/2005CN1599806A Support for microelectronic, microoptoelectronic or micromechanical devices
03/23/2005CN1599638A Gas supplying method and system
03/23/2005CN1599637A Method and installation for treating flue gas containing hydrocarbons
03/23/2005CN1599033A Method for catalytic synthetic growth InN nano point using In metal nano point
03/23/2005CN1598928A Film forming method and system
03/23/2005CN1598061A Method for removing a composite coating containing tantalum deposition and arc sprayed aluminum from ceramic substrates
03/23/2005CN1598050A Process for high concentration plasma chemical vapour phase deposition by multi-step deposition
03/23/2005CN1598049A Process for plasma strengthening type chemical vapour phase deposition treatment
03/23/2005CN1598048A Holder for multiple substrates and chamber with the same
03/23/2005CN1598047A Process for preparing large area high quality anti-crack on diamant film
03/23/2005CN1598046A Preparing onion shape fulven by chemical vapour phase deposition
03/23/2005CN1598045A Technology for preparing nano tube of carbon by direct current glow plasma chemical vapour phase deposition process
03/23/2005CN1597687A Novel organometallic iridium compound, process of producing the same, and process of producing thin film
03/23/2005CN1194398C Film thickness monitoring method
03/23/2005CN1194386C Method for measuring film thick of semiconductor device
03/23/2005CN1194173C Collector
03/23/2005CN1194117C Organocuprous precursors for chemical vapor deposition of copper film
03/23/2005CN1193931C Synthesis of double walled carbon nano-tubes
03/23/2005CN1193930C Process for direct low-temperature synthesis of carbon nanotube on substrate
03/22/2005US6871111 Performance evaluation method for plasma processing apparatus
03/22/2005US6869896 Plasma processes for depositing low dielectric constant films
03/22/2005US6869890 Processing apparatus to be sealed against workpiece
03/22/2005US6869880 In situ application of etch back for improved deposition into high-aspect-ratio features
03/22/2005US6869877 Integrated capacitors fabricated with conductive metal oxides
03/22/2005US6869876 Process for atomic layer deposition of metal films
03/22/2005US6869747 Organic polymeric antireflective coatings deposited by chemical vapor deposition
03/22/2005US6869676 Alternating first and second layers, the first layer including an individual hard-material layer such as carbides or silicides and the second layer including an individual carbon layer or an individual silicon layer,
03/22/2005US6869668 α-alumina coated cutting tool
03/22/2005US6869641 Atomic layer deposition (ALD)/epitaxy
03/22/2005US6869638 Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same
03/22/2005US6869499 Substrate processing method and substrate processing apparatus
03/22/2005US6869485 Compact process chamber for improved process uniformity
03/22/2005US6869484 Continuous feed coater
03/22/2005US6869481 Method and device for regulating the differential pressure in epitaxy reactors
03/22/2005US6868869 Sub-atmospheric pressure delivery of liquids, solids and low vapor pressure gases
03/22/2005US6868856 Local and remote gas dissociators coupled to a semiconductor processing chamber
03/17/2005WO2005024928A1 Gas treatment device and heat readiting method
03/17/2005WO2005024926A1 Substrate treating device and method of manufacturing semiconductor device
03/17/2005WO2005024922A1 A method of forming a teos cap layer at low temperature and reduced deposition rate
03/17/2005WO2005024891A2 Voltage non-uniformity compensation method for high frequency plasma reactor for the treatment of rectangular large area substrates
03/17/2005WO2005024094A2 In-situ-etch-assisted hdp deposition using sif4 and hydrogen
03/17/2005WO2005023518A1 Method and device for handling workpieces
03/17/2005WO2005005686A8 Method for forming metal oxide coating film and vapor deposition apparatus
03/17/2005WO2005003406A3 Apparatus and method for chemical source vapor pressure control
03/17/2005WO2004099864A3 Electro-optical transducer
03/17/2005WO2004079814B1 Modulated/composited cvd low-k films with improved mechanical and electrical properties for nanoelectronic devices
03/17/2005WO2004049358A3 Multifunctional particulate material, fluid, and composition
03/17/2005US20050059264 CVD plasma assisted low dielectric constant films
03/17/2005US20050059261 Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces
03/17/2005US20050059246 Device and method for manufacturing thin films
03/17/2005US20050059243 Film forming material, film forming method, and silicide film
03/17/2005US20050059241 Method and system for controlling the presence of fluorine in refractory metal layers
03/17/2005US20050059203 Cleaning method for a semiconductor device manufacturing apparatus
03/17/2005US20050056844 Glass substrate assembly, semiconductor device and method of heat-treating glass substrate
03/17/2005US20050056622 Method and apparatus for the compensation of edge ring wear in a plasma processing chamber
03/17/2005US20050056369 Plasma apparatus and method capable of adaptive impedance matching
03/17/2005US20050056223 Cold wall chemical vapor deposition apparatus and cleaning method of a chamber for the same
03/17/2005US20050056221 Minimum volume oven for producing uniform pyrolytic oxide coatings on capacitor anodes
03/17/2005US20050056220 Method and apparatus for forming silicon oxide film
03/17/2005US20050056219 Formation of a metal-containing film by sequential gas exposure in a batch type processing system
03/17/2005US20050056218 Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate
03/17/2005US20050056217 Shower head, device and method for manufacturing thin films
03/17/2005US20050056216 Precursor delivery system
03/17/2005US20050056211 Method of growing a thin film onto a substrate
03/17/2005DE10338731B4 Verfahren zur Herstellung einer (RO)(R'O)(R''O)M=O-Verbindung, dünnschichtbildendes Material, Dünnschicht und Halbleiterelement A process for producing a (RO) (R'O) (R''O) M = O compound thin film forming material, and thin-film semiconductor element
03/17/2005DE10337568A1 Gasversorgungsanordnung, insbesondere für einen CVD-Prozessreaktor zum Aufwachsen einer Epitaxieschicht Gas supply arrangement, especially for a CVD reactor process for growing an epitaxial layer
03/17/2005DE10254427B4 Beschichtungsanlage und Verfahren zur Beschichtung Coating system and method for coating
03/17/2005DE10222879A1 Messung niedriger Wafer-Temperaturen Measurement of low wafer temperatures