Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
04/2005
04/21/2005WO2004008494A3 Servomotor control system and method in a semiconductor manufacturing environment
04/21/2005US20050085400 System and method for cleaning semiconductor fabrication equipment parts
04/21/2005US20050085145 Textile substrate for fire resistant garments with good repellency and stain resistance; fire resistant fibers treated with a fluorochemical component (e.g. fluoroacrylate or fluoro polyurethane) and crosslinking component; given stain release value to burned motor oil; protective garments
04/21/2005US20050085098 Method for the deposition of silicon nitride films
04/21/2005US20050085097 Method of fabricating multilayer interconnect wiring structure having low dielectric constant insulator film with enhanced adhesivity
04/21/2005US20050085058 Methods of forming conductive metal silicides by reaction of metal with silicon
04/21/2005US20050085054 Deposition of carbon and nitrogen doped poly silicon films, and retarded boron diffusion and improved poly depletion
04/21/2005US20050084987 Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece
04/21/2005US20050084705 Protective layer for a body, and process and arrangement for producing protective layers
04/21/2005US20050084654 Component for vacuum apparatus, production method thereof and apparatus using the same
04/21/2005US20050084611 coating a colloidal dispersion on substrates, then drying to form a layer of colloidal beads, forming films comprising metals and/or metal compounds on the surfaces of the beads and removing the beads to form cavities
04/21/2005US20050084610 Atmospheric pressure molecular layer CVD
04/21/2005US20050084439 Highly pure ultra-fine siox powder and method for production thereof
04/21/2005US20050082615 Epitaxial ferroelectric thin-film device and method of manufacturing the same
04/21/2005US20050082482 Process monitoring using infrared optical diagnostics
04/21/2005US20050082385 Shower head structure and cleaning method thereof
04/21/2005US20050082005 Plasma processing method and apparatus
04/21/2005US20050082003 Plasma treatment apparatus and plasma generation method
04/21/2005US20050082002 Method of cleaning a film-forming apparatus and film-forming apparatus
04/21/2005US20050082001 Cleaning method and cleaning device
04/21/2005US20050081882 Method for preventing and cleaning ruthenium-containing deposits in a CVD apparatus
04/21/2005US20050081790 Film deposition device
04/21/2005US20050081789 Silicon nitride film forming method, silicon nitride film forming system and silicon nitride film forming system precleaning method
04/21/2005US20050081788 Device for depositing thin layers on a substrate
04/21/2005US20050081787 Apparatus and method for supplying a source, and method of depositing an atomic layer using the same
04/21/2005US20050081786 Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers
04/21/2005US20050081752 Efficient evaporizative distillation
04/20/2005EP1524703A2 Method of manufacturing a Silicon-based thin-film-photoelectric conversion device
04/20/2005EP1524682A1 Component for vacuum apparatus, production method thereof and apparatus using the same
04/20/2005EP1524328A1 Method of selective region vapor phase aluminizing
04/20/2005EP1524242A2 Method and apparatus for manufacturing carbon nanotube, and material used therein for decomposing a precursor gas
04/20/2005EP1523765A2 Metal organic chemical vapor deposition and atomic layer deposition of metal oxynitride and metal silicon oxynitride
04/20/2005EP1523763A2 Molecular layer deposition of thin films with mixed components
04/20/2005EP1523761A1 Transfer chamber for vacuum processing system
04/20/2005EP1523585A2 Loading and unloading device for a coating unit
04/20/2005EP1230419A4 COMPOSITION AND METHOD FOR CVD DEPOSITION OF Zr/Hf SILICATE FILMS
04/20/2005EP1183719A4 Scalable lead zirconium titanate (pzt) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material
04/20/2005EP1060501B1 Method and apparatus for predicting plasma-process surface profiles
04/20/2005CN1608313A Boat for heat treatment and vertical heat treatment equipment
04/20/2005CN1608312A Thermal treating apparatus
04/20/2005CN1608305A Suspended gas distribution manifold for plasma chamber
04/20/2005CN1608148A Apparatus and method for diamond production
04/20/2005CN1608146A Apparatus for the generation and supply of fluorine gas
04/20/2005CN1608142A Method and installation for densifying porous substrates by chemical vapour infiltration
04/20/2005CN1607989A Apparatus and method for controlling temperature uniformity of substrates
04/20/2005CN1607889A RF plasma reactor
04/20/2005CN1607868A Mask frame assembly for depositing a thin layer of an electroluminescent device and method for depositing a thin layer
04/20/2005CN1607683A Nitride semiconductors on silicon substrate and method of manufacturing the same
04/20/2005CN1607266A Apparatus for treating workpieces
04/20/2005CN1197992C Device for preventing condensation of plasma evaporating and plating equipment
04/20/2005CN1197989C Electrode for plasma polymerization treatment equipment
04/20/2005CN1197702C Aerogel substrate and method for preparing the same
04/19/2005US6882052 Plasma enhanced liner
04/19/2005US6881952 Residual gas analyzer of semiconductor device manufacturing equipment
04/19/2005US6881684 Method of forming silicon nitride deposited film
04/19/2005US6881683 Insulation film on semiconductor substrate and method for forming same
04/19/2005US6881681 Film deposition on a semiconductor wafer
04/19/2005US6881667 Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer
04/19/2005US6881636 Methods of forming deuterated silicon nitride-containing materials
04/19/2005US6881475 Amorphous carbon coated tool and fabrication method thereof
04/19/2005US6881295 Air-tight vessel equipped with gas feeder uniformly supplying gaseous component around plural wafers
04/19/2005US6881277 Method of processing selected surfaces in a semiconductor process chamber based on a temperature differential between surfaces
04/19/2005US6881276 Detecting the endpoint of a chamber cleaning
04/19/2005US6881269 A plasma cloud of hydrocarbon gas is established between electrodes in the chamber positioned between entry and an exit chambers, a lens is moved into entry then coating chambers where pressure is maintained, forming polymeric film
04/19/2005US6881268 Method and apparatus for forming required gas atmosphere
04/19/2005US6881263 Method of growing a thin film onto a substrate
04/19/2005US6880592 Canister guard
04/19/2005US6880561 Molecular fluorine is decomposed in a plasma to produce atomic fluorine; air pollution control; global warming prevention
04/14/2005WO2005034233A1 Electro-static chuck with non-sintered aln and a method of preparing the same
04/14/2005WO2005034224A1 Method of forming a metal layer using an intermittent precursor gas flow process
04/14/2005WO2005034223A1 Method of depositing metal layers from metal-carbonyl precursors
04/14/2005WO2005034222A1 Method for depositing metal layers using sequential flow deposition
04/14/2005WO2005034220A1 Method of vapor phase growth and vapor phase growth apparatus
04/14/2005WO2005034219A1 Production method for silicon epitaxial wafer, and silicon epitaxial wafer
04/14/2005WO2005034196A2 Atomic layer deposition of hafnium-based high-k dielectric
04/14/2005WO2005034195A2 Growth of high-k dielectrics by atomic layer deposition
04/14/2005WO2005033361A1 Gas distribution showerhead
04/14/2005WO2005033360A1 Polysulfide thermal vapour source for thin sulfide film deposition
04/14/2005WO2005033359A2 Atomic layer deposition methods of forming silicon dioxide comprising layers
04/14/2005WO2005033358A2 Method for depositing a conductive material on a substrate, and semiconductor contact device
04/14/2005WO2005033357A2 Low-pressure deposition of metal layers from metal-carbonyl precursors
04/14/2005WO2005033351A2 Protection of metallic surfaces against thermally-induced wrinkling (rumpling) in particular in gas turbines
04/14/2005WO2005033001A2 Methods for preparation of one-dimensional carbon nanostructures
04/14/2005WO2004105079A8 Device for area-based surface treatment of an article by electric dielectric barrier discharge
04/14/2005WO2004097068A3 Polymorphous materials, method for preparing same, and device comprising same
04/14/2005US20050080282 a copper complex which has a low melting point (liquid at room temperature) and is thermally stable, so that it is favorably employable as the copper source in the chemical vapor deposition process for producing thin films
04/14/2005US20050079731 Plasma enhanced chemical vapor deposition methods and semiconductor processing methods of forming layers and shallow trench isolation regions
04/14/2005US20050079729 High density plasma oxide film deposition apparatus having a guide ring and a semiconductor device manufacturing method using the same
04/14/2005US20050079715 Method for high aspect ratio HDP CVD gapfill
04/14/2005US20050079708 Method of depositing metal layers from metal-carbonyl precursors
04/14/2005US20050079697 Plasma enhanced chemical vapor deposition method of forming a titanium silicide comprising layer
04/14/2005US20050079690 Method for producing silicon epitaxial wafer
04/14/2005US20050079370 Nano-multilayered structures, components and associated methods of manufacture
04/14/2005US20050079295 Apparatus and method for depositing large area coatings on planar surfaces
04/14/2005US20050079290 a tantalum complex recursor for a barrier layer selected from tantalum nitride, tantalum oxide or bismuth tantalum oxide
04/14/2005US20050079116 High strength tape; oxide superconductor overcoated with silver layer diffused with copper
04/14/2005US20050078953 Substrate heater assembly
04/14/2005US20050078462 Laser assisted material deposition
04/14/2005US20050077811 Field emission device and method of fabricating same
04/14/2005US20050077519 Lanthanide oxide/zirconium oxide atomic layer deposited nanolaminate gate dielectrics