Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
08/2005
08/04/2005US20050170645 Metal plating using seed film
08/04/2005US20050170617 Film formation method and apparatus for semiconductor process
08/04/2005US20050170566 Thin film structure, capacitor, and methods for forming the same
08/04/2005US20050170553 Apparatus for controlled alignment of catalytically grown nanostructures
08/04/2005US20050170539 Substrate for semiconductor light-emitting element, semiconductor light-emitting element and semiconductor light-emitting element fabrication method
08/04/2005US20050170196 Substrate having catalyst layer thereon and method of cleaning reaction chamber using the same
08/04/2005US20050170163 Enhanced alumina layer produced by CVD
08/04/2005US20050170104 Producing thinner films with precisely controlled stress; plasma enhanced chemical vapor deposition employing both high and low radio frequency power input sources
08/04/2005US20050170092 Alkaline earth metal complexes and their use
08/04/2005US20050170090 By setting the ratio between the amount of the barrier gas supplied from first and second barrier gas supply ports and ratio between amounts of barrier gas and raw material gas enables to form a thin film without particles adhesion on the substrate
08/04/2005US20050170089 Systems and methods for synthesis of extended length nanostructures
08/04/2005US20050170088 Hermetically seal surgical implant to make diffusion tight; use chemical vapor deposition chamber at low pressure, high temperature with a halogen or a hydrohalide gas; polish part between multiple exposures to reactant gas in chamber
08/04/2005US20050169440 Method and system for selecting speech or DTMF interfaces or a mixture of both
08/04/2005US20050168152 Termination of secondary frequencies in RF power delivery
08/04/2005US20050167768 Manufacture of semiconductor device having insulation film of high dielectric constant
08/04/2005US20050167715 Substrate for electronic devices, manufacturing method therefor, and electronic device
08/04/2005US20050167686 Nitride semiconductor thin film and method for growing the same
08/04/2005US20050167651 Controlled alignment catalytically grown nanostructures
08/04/2005US20050167398 Vacuum processing apparatus and control method therefor
08/04/2005US20050167393 Cleaning process and apparatus for silicate materials
08/04/2005US20050167052 Plasma processing device and baffle plate thereof
08/04/2005US20050167049 Vacuum processing apparatus and control method therefor
08/04/2005US20050166850 Combinatorial synthesis of material chips
08/04/2005US20050166849 Apparatus and methods for preventing rotational slippage between a vertical shaft and a support structure for a semiconductor wafer holder
08/04/2005US20050166847 Solid source precursor delivery system
08/04/2005US20050166844 High reflectivity atmospheric pressure furnace for preventing contamination of a work piece
08/04/2005US20050166843 Apparatus for fabricating a conformal thin film on a substrate
08/04/2005US20050166842 Vapor deposition mask and organic EL display device manufacturing method
08/04/2005US20050166836 Vapor-phase epitaxial apparatus and vapor phase epitaxial method
08/04/2005US20050166835 Vapor phase growth method for al-containing III-V group compound semiconductor, and method and device for producing al-containing IIl-V group compound semiconductor
08/04/2005DE10392519T5 System zur Abscheidung eines Films auf einem Substrat unter Verwendung eines Gas-Precursors mit niedrigem Dampfdruck A system for depositing a film on a substrate using a gas precursor with a low vapor pressure
08/04/2005DE10323453B4 Verfahren zur Erzeugung von Gradientenschichten im Inneren von polymeren Rohren und Vorrichtung zu dessen Durchführung A method for generating gradient in the interior of polymeric tubes and device for its implementation
08/04/2005DE102005001916A1 Aufdruckprägesystem Print embossing system
08/04/2005DE102004001391A1 Deposition of a layer of organometallic and/or metal-halogen compounds on a complex profile component by chemical gas phase deposition useful for corrosion protection and heat insulation, e.g. of gas turbine blades
08/03/2005EP1560280A1 Thin film multilayer body, electronic device using such thin film multilayer body, actuator, and method for manufacturing actuator
08/03/2005EP1560259A2 Nitride semiconductor thin film and method for growing the same
08/03/2005EP1560252A2 Deposition apparatus
08/03/2005EP1559809A2 Apparatus and method for coating substrate
08/03/2005EP1559128A1 Methods and apparatus for generating high-density plasma
08/03/2005EP1558784A2 Two-layer film for next generation damascene barrier application with good oxidation resistance
08/03/2005EP1558783A2 Two-step atomic layer deposition of copper layers
08/03/2005EP1280617A4 Deposited thin films and their use in separation and sarcrificial layer applications
08/03/2005EP1264004B1 Method and device for coating substrates
08/03/2005CN1650400A Material supply system in semiconductor device manufacturing plant
08/03/2005CN1650045A Film forming apparatus
08/03/2005CN1650044A Vapor deposition of silicon dioxide nanolaminates
08/03/2005CN1650043A Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD
08/03/2005CN1650042A Gas preheater
08/03/2005CN1649090A Nitride semiconductor thin film and method for growing the same
08/03/2005CN1648725A Substrate supporting means having wire and apparatus using the same
08/03/2005CN1648286A TiN-TiAIN series hard nano structure multilayer coating layer
08/03/2005CN1648284A Method for preparing functional gradient material using metal organic chemical vapor-phase deposition method
08/03/2005CN1648283A Plasma chemical vapor deposition system and method for coating both sides of substrate
08/03/2005CN1648282A Plasma enhanced semicondutor deposition apparatus
08/03/2005CN1648102A Anti-plasma member, its producing method and method for forming heat spraying coating
08/03/2005CN1213167C Gas blocking preventing device of plasma continuous coating device
08/03/2005CN1213166C Continuous evaporation coating device of plasma with magnet
08/03/2005CN1213165C Process for depositing composite anti-corrosion layer and hydrophilic layer using plasma technology
08/03/2005CN1213164C Waste gas filter of plasma depositing coating system
08/03/2005CN1213161C 包装材料 Packaging Materials
08/02/2005US6924968 Haze-free BST films
08/02/2005US6924462 Pedestal for flat panel display applications
08/02/2005US6924454 mixing tubes using a superhard material, i.e. PCD (polycrystalline diamond) or electrically conductive PCBN (polycrystalline cubic boron nitride), in high pressure abrasive water jet systems and methods for producing same
08/02/2005US6924231 Single wafer processing method and system for processing semiconductor
08/02/2005US6924230 Method for forming a conductive layer
08/02/2005US6924223 Method of forming a metal layer using an intermittent precursor gas flow process
08/02/2005US6924212 Method for forming a semiconductor
08/02/2005US6924195 Methods of forming metal-comprising materials and capacitor electrodes; and capacitor constructions
08/02/2005US6924164 Method of continuous processing of thin-film batteries and like devices
08/02/2005US6924012 Vapor deposition; molecular beam epitaxial
08/02/2005US6924004 generating aerosol cloud of particles, accelerating the particles into the expansion chamber, creating a collimated beam by passing partilcles through the aerodynamic focusing lenses and into a deposition chamber, then impacting with substrate
08/02/2005US6924002 comprises nickel/aluminum based intermetallics; for promoting heat transfer
08/02/2005US6924001 diamond-like carbon (DLC) films
08/02/2005US6923869 Device for deposition with chamber cleaner and method for cleaning the chamber
08/02/2005US6923189 Cleaning of CVD chambers using remote source with cxfyoz based chemistry
07/2005
07/28/2005WO2005069701A1 Plasma processing apparatus
07/28/2005WO2005069360A1 Treatment device
07/28/2005WO2005069359A1 Substrate treating device and method of manufacturing semiconductor device
07/28/2005WO2005069358A1 Film-forming method
07/28/2005WO2005069356A1 Process for producing monocrystal thin film and monocrystal thin film device
07/28/2005WO2005068825A1 Valve needle, and valve
07/28/2005WO2005068682A2 High-performance vaporizer for liquid-precursor and multi-liquid-precursor vaporization in semiconductor thin film deposition
07/28/2005WO2005068681A2 Cleaning tantalum-containing deposits from process chamber components
07/28/2005WO2005067634A2 Advanced multi-pressure worpiece processing
07/28/2005WO2005067578A2 Method and apparatus for the chemical vapor deposition of materials
07/28/2005WO2005067423A2 Disposition source using pellets for making oleds
07/28/2005WO2005046305A3 Method of producing nanostructure tips
07/28/2005WO2005034196A9 Atomic layer deposition of hafnium-based high-k dielectric
07/28/2005WO2005031032A3 Apparatus for conveying gases to and from a chamber
07/28/2005WO2005026408A3 Methods of treating components of a deposition apparatus to form particle traps, and such components having particle traps thereon
07/28/2005WO2004079764A3 Coil constructions configured for utilization in physical vapor deposition chambers, and methods of forming coil constructions
07/28/2005US20050164521 Zr-Sn-Ti-O films
07/28/2005US20050164517 In-situ-etch-assisted HDP deposition using SiF4
07/28/2005US20050164487 Formation of a tantalum-nitride layer
07/28/2005US20050164474 Method for depositing high-quality microcrystalline semiconductor materials
07/28/2005US20050164464 Process for vertically patterning substrates in semiconductor process technology by means of inconformal deposition
07/28/2005US20050164042 During high-speed intermittent cutting of steel, cast iron, wear resistance
07/28/2005US20050163985 Synergetic SP-SP2-SP3 carbon materials and deposition methods thereof
07/28/2005US20050163939 High intensity-discharge lamps; applying amorphous thin layers of TiOx and SiOx by plasma impulse chemical vapor deposition at high power density and increased substrate temperatures using small growth rates to form interference layer less than 1200 nm thick and a minimized UV-active defective spot rate
07/28/2005US20050163929 Washing effluent gas with an oil that absorbs contained tars; the oil is continuously taken from a tank to be injected into the effluent stream and returned loaded with tars to the tank; the level of oil in the tank provides information used to modify temperature, pressure and/or flow rate