Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
09/2005
09/15/2005US20050202167 Adding to a reactor a fluorine-containing cleaning agent, a chlorine-containing cleaning agent; reacting the TiO2 with the reactive gas to form a volatile product; and removing it from the reactor
09/15/2005US20050202162 Reactive metal sources and deposition method for thioaluminate phosphors
09/15/2005US20050201921 Coating has high hardness, low friction coefficient, high ductility and simultaneously excellent strength against flaking-off and shows remarkably reduced residual stress, even at high temperatures; cutting, drilling tools; comprises aluminium, additional metal, carbon, other element
09/15/2005US20050201894 Conveying plurality of substrates in holder into reaction container; heating a plurality of zones of thermal process atmosphere in the reaction container by means of a plurality of heating units; forming uniform thin films; oxidation, chemical vapor deposition; semiconductors
09/15/2005US20050200260 Electrically conductive polycrystalline diamond and particulate metal based electrodes
09/15/2005US20050199886 Nitride semiconductor device and method of manufacturing the same
09/15/2005US20050199187 Heat treatment apparatus and substrate processing apparatus
09/15/2005US20050199186 Inductively coupled plasma apparatus using magnetic field
09/15/2005US20050199184 Gas distributor having directed gas flow and cleaning method
09/15/2005US20050199183 Plasma processing apparatus
09/15/2005US20050199182 Apparatus for the preparation of film
09/15/2005DE102004009772A1 CVD-Reaktor mit Prozesskammerhöhenstabilisierung CVD reactor process chamber height stabilization
09/15/2005DE102004009130A1 Einlasssystem für einen MOCVD-Reaktor An intake system for an MOCVD reactor
09/15/2005DE102004008598A1 Verfahren für den Betrieb einer Inline-Beschichtungsanlage A method of operating an in-line coating line
09/15/2005DE102004008442A1 Siliciumverbindungen für die Erzeugung von SIO2-haltigen Isolierschichten auf Chips Silicon compounds for the production of SiO2-containing insulating layers on chips
09/15/2005DE10195251B4 Plasmaverarbeitungssystem und Verfahren Plasma processing system and method
09/15/2005DE10046973B4 Verfahren zur Herstellung eines CVD-Diamantwerkzeugs und Verwendung A method for producing a CVD diamond tool and using
09/15/2005CA2554756A1 Reactive metal sources and deposition method for thioaluminate phosphors
09/14/2005EP1574597A1 Apparatus and process for producing thin films and devices
09/14/2005EP1574594A1 A carbon containing hard coating and a method for depositing a hard coating onto a substrate
09/14/2005EP1573868A2 Optical uses of diamondoid-containing materials
09/14/2005EP1573795A1 A system and method for controlling plasma with an adjustable coupling to ground circuit
09/14/2005EP1573780A2 Bubbler for substrate processing
09/14/2005EP1573091A1 Plating solutions for electrochemical or chemical deposition of copper interconnects and methods therefor
09/14/2005EP1573086A2 Additives to prevent degradation of alkyl-hydrogen siloxanes
09/14/2005EP1572786A2 Process and apparatus for depositing plasma coating onto a container
09/14/2005EP1044458B1 Dual face shower head magnetron, plasma generating apparatus and method of coating a substrate
09/14/2005CN1669127A Heat treatment method and heat treatment apparatus
09/14/2005CN1669126A Surface treating method for substrate
09/14/2005CN1668776A Zirconium complex useful in a CVD method and a thin film preparation method using the complex
09/14/2005CN1668545A Article having nano-scaled structures and a process for making such article
09/14/2005CN1667459A Vacuum pumping system, driving method thereof, apparatus having the same, and method of transferring substrate using the same
09/14/2005CN1666688A Method for making aluminium zipper with colorful galvanized coating
09/14/2005CN1219419C Substrate electrode material processing apparatus and method
09/14/2005CN1219315C Gallium nitride base film epitaxial growth apparatus by metallorganics chemical gas phase deposition
09/14/2005CN1219109C Hard alloy matix complex shape cutter diamond coating preparation method
09/13/2005US6943366 Substrate for semiconductor light-emitting element, semiconductor light-emitting element and semiconductor light-emitting element fabrication method
09/13/2005US6943127 CVD plasma assisted lower dielectric constant SICOH film
09/13/2005US6943109 Method of manufacturing a semiconductor element
09/13/2005US6943089 Semiconductor device manufacturing method and semiconductor manufacturing apparatus
09/13/2005US6943073 Process for low temperature atomic layer deposition of RH
09/13/2005US6943053 System, method and medium for modeling, monitoring and/or controlling plasma based semiconductor manufacturing processes
09/13/2005US6942929 Process chamber having component with yttrium-aluminum coating
09/13/2005US6942893 Part of the flow of reactive gas admitted into the enclosure is guided to the inside of the volume defined by a concave inside face of the hollow shaped substrate at pressure equilibrium
09/13/2005US6942892 Hot element CVD apparatus and a method for removing a deposited film
09/13/2005US6942891 analyzing the gas components of various types exhausted during a semiconductor manufacturing process
09/13/2005US6942753 Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
09/09/2005WO2005083777A1 Methods and apparatuses promoting adhesion of dielectric barrier film to copper
09/09/2005WO2005083766A1 Substrate processing device
09/09/2005WO2005083760A1 Substrate processing equipment and semiconductor device manufacturing method
09/09/2005WO2005083753A1 Semiconductor treating device
09/09/2005WO2005083156A1 Non-cyanide silver plating bath composition
09/09/2005WO2005083154A2 Cleaning of chamber components
09/09/2005WO2005083153A1 Cvd-reactor with stabilized process chamber height
09/09/2005WO2005083152A1 Method for forming copper film
09/09/2005WO2005083151A2 Pressure gradient cvi/cvd apparatus and method
09/09/2005WO2005083146A2 Vaporizing temperature sensitive materials for oled
09/09/2005WO2005081940A2 Magnetically enhanced, inductively coupled plasma source for a focused ion beam system
09/09/2005WO2005081933A2 Chemical vapor deposition of high conductivity, adherent thin films of ruthenium
09/09/2005WO2005081788A2 High throughput surface treatment on coiled flexible substrates
09/09/2005WO2005081658A2 Metalorganic chemical vapor deposition (mocvd) process and apparatus to produce multi-layer high-temperature superconducting (hts) coated tape
09/09/2005WO2005066386A3 A method and apparatus for forming a high quality low temperature silicon nitride layer
09/09/2005CA2529373A1 Metalorganic chemical vapor deposition (mocvd) process and apparatus to produce multi-layer high-temperature superconducting (hts) coated tape
09/08/2005US20050196976 Methods of filling gaps using high density plasma chemical vapor deposition
09/08/2005US20050196972 Semiconductor component having at least one organic semiconductor layer and method for fabricating the same
09/08/2005US20050196971 Hardware development to reduce bevel deposition
09/08/2005US20050196970 Novel deposition of high-k MSiON dielectric films
09/08/2005US20050196920 Semiconductor device with rare metal electrode
09/08/2005US20050196549 Microwave enhanced CVD method and apparatus
09/08/2005US20050196548 Corrosion resistance effect of the surface layer achieved without the structure of the applied layer having to be subsequently densified by mechanical means; plasma-based vapor deposition that forms a dense, fine-grained, largely pore-free structure; coatings of aluminum and its alloys
09/08/2005US20050196534 Chemical vapor deposition (CVD); bad influence by a decomposed gas, e.g., CO which is produced by a decomposition of the metal carbonyl gas is prevented and a metal film having a low electrical resistance is formed on a substrate
09/08/2005US20050196533 Method and apparatus for forming silicon oxide film
09/08/2005US20050196254 transfer unit under atmospheric condition having a robot; process chamber connected to one side of the transfer unit with a slot valve; alternately under vacuum and atmospheric conditions; manufacture substrates for a semiconductor device, liquid crystal display; reduced footprint and decrease costs
09/08/2005US20050194475 Inductively coupled plasma chemical vapor deposition apparatus
09/08/2005US20050194100 Reduced friction lift pin
09/08/2005US20050194097 Plasma processing apparatus and method of designing the same
09/08/2005US20050194094 Window type probe, plasma monitoring device, and plasma processing device
09/08/2005US20050194023 Method of processing selected surfaces in a semiconductor process chamber based on a temperature differential between surfaces
09/08/2005US20050193953 Plasma processing apparatus
09/08/2005US20050193952 Substrate support system for reduced autodoping and backside deposition
09/08/2005US20050193951 Plasma processing apparatus
09/08/2005US20050193950 Supporting module and alignment apparatus for a substrate
09/08/2005US20050193949 Method for manufacturing integrated circuits and corresponding device
09/08/2005US20050193948 Vacuum processing apparatus
09/08/2005US20050193947 Deposition reactors and systems
09/08/2005US20050193946 Apparatus and method for preventing corrosion of a vacuum gauge
09/08/2005DE10015729B4 Verfahren zum Herstellen eines Elementes aus polykristallinem Diamant sowie danach hergestelltes Element A method of manufacturing a polycrystalline diamond element, and thereafter produced element
09/07/2005EP1571234A2 Method for using an in line coating apparatus
09/07/2005EP1570525A1 Method for forming a dielectric stack
09/07/2005EP1570108A1 Susceptor system
09/07/2005EP1570107A1 Susceptor system
09/07/2005EP1570106A2 Method and device for the cvd coating of workpieces
09/07/2005EP1570105A1 Method for chemical vapour deposition (cvd) of zrb sb x /sb c sb y /sb n sb z /sb (or x+y+z=1) layers and a cutting tool coated with said layer
09/07/2005EP1570104A1 MOCVD FORMATION OF CU sb 2 /sb S
09/07/2005EP1570096A1 Composite metal product and method for the manufacturing of such a product
09/07/2005EP1071833B1 Method and apparatus for modifying the profile of high-aspect-ratio gaps using differential plasma power
09/07/2005EP0890185B1 Solid state temperature controlled substrate holder
09/07/2005CN1666319A Group III nitride semiconductor substrate and its manufacturing method
09/07/2005CN1666315A Method and apparatus for non-invasive measurement and analysis of semiconductor process parameters
09/07/2005CN1665969A Porous substrate and its manufacturing method, and GaN semiconductor multilayer substrate and its manufacturing method