Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
08/2005
08/30/2005US6936906 atomic layer deposition barrier chamber for depositing a barrier layer comprising tantalum nitride;
08/30/2005US6936863 Boron phosphide-based semiconductor light-emitting device, production method thereof and light-emitting diode
08/30/2005US6936551 Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices
08/30/2005US6936549 Chemical vapor deposition using organometallic precursors
08/30/2005US6936548 Method for depositing silicon nitride films and silicon oxynitride films by chemical vapor deposition
08/30/2005US6936547 Gas delivery system for deposition processes, and methods of using same
08/30/2005US6936538 Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
08/30/2005US6936537 Methods for forming low-k dielectric films
08/30/2005US6936535 Copper interconnect structure having stuffed diffusion barrier
08/30/2005US6936310 Plasma processing method
08/30/2005US6936309 Depositing a low dielectric constant film comprising silicon, carbon, and hydrogen; treating the deposited film with a plasma of helium, hydrogen, or a mixture thereof at conditions sufficient to increase the hardness of film
08/30/2005US6936299 Determined in situ during coating process using a sensor which has an electrical property which, as a result of the coating process, changes in a manner which is representative of the layer thickness
08/30/2005US6936114 providing a steam source that produces steam at a greater pressure than atmospheric pressure, directing steam through the channel, steam removing the reaction products of aluminum and halogen from the channel of the component of the equipment
08/30/2005US6936108 Heat treatment device
08/30/2005US6936102 SiC material, semiconductor processing equipment and method of preparing SiC material therefor
08/30/2005US6936086 High conductivity particle filter
08/30/2005US6935372 Semiconductor processing reactive precursor valve assembly
08/30/2005US6935351 Method of cleaning CVD device and cleaning device therefor
08/25/2005WO2005079117A1 Cylindrical microwave chamber
08/25/2005WO2005078784A1 Method for producing silicon oxide film
08/25/2005WO2005078782A1 Plasma processing apparatus and plasma processing method
08/25/2005WO2005078781A1 Film-forming apparatus
08/25/2005WO2005078155A1 Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen
08/25/2005WO2005078154A1 Process for producing transparent conductive film and process for producing tandem thin-film photoelectric converter
08/25/2005WO2005076918A2 Barrier layer process and arrangement
08/25/2005WO2005044907A3 Flame resistant
08/25/2005US20050187335 Substantially pure bulk pyrocarbon and methods of preparation
08/25/2005US20050186789 Photo-assisted method for semiconductor fabrication
08/25/2005US20050186767 Semiconductor device, apparatus and method for manufacturing the same
08/25/2005US20050186731 Atomic layer deposition method of forming an oxide comprising layer on a substrate
08/25/2005US20050186688 Chemical vapor deposition methods and physical vapor deposition methods
08/25/2005US20050186346 Method for operating an in-line coating installation
08/25/2005US20050186345 Conductive diamond electrode and process for producing the same
08/25/2005US20050186344 Placing a pair of closely spaced electrodes, at least one of which is formed from a composite carbon material, producing a spark between the two electrodes, to cause the carbon to sublime and deposit; carbonization of polymer mixed with carbon powder
08/25/2005US20050186343 Method of making a stick resistant multi-layer ceramic coating
08/25/2005US20050186342 Formation of CIGS absorber layer materials using atomic layer deposition and high throughput surface treatment
08/25/2005US20050186341 CVD of a ruthenium nucleation layer followed by CVD of a highly conductive ruthenium upper layer, both using low deposition rates
08/25/2005US20050186340 Device and method for vaporizing temperature sensitive materials
08/25/2005US20050186339 Methods and apparatuses promoting adhesion of dielectric barrier film to copper
08/25/2005US20050186338 High throughput surface treatment on coiled flexible substrates
08/25/2005US20050184670 Device for confinement of a plasma within a volume
08/25/2005US20050184034 Method for using a microwave source for reactive atom-plasma processing
08/25/2005US20050183961 Complex of silver with hydantoin or a substituted hydantoin; sulfamic, hydrofluoric, nitric, fluoboric, glycolic or lactic acid nonprecipitating electrolyte salts; pyridine, nicotinamide and dipyridyl for a mirror bright to brilliant deposit; surface active material is Hamposyl, Blancol, Rhodacal
08/25/2005US20050183959 Automatic process control; using facility for automatically selecting and refining electrical parameters for processing a microelectronic workpiece
08/25/2005US20050183944 Reducing stress in coatings produced by physical vapour deposition
08/25/2005US20050183829 Low-mass susceptor improvements
08/25/2005US20050183828 Plasma processing apparatus, semiconductor manufacturing apparatus and electrostatic chucking unit used thereof
08/25/2005US20050183827 Showerhead mounting to accommodate thermal expansion
08/25/2005US20050183825 Modular injector and exhaust assembly
08/25/2005US20050183771 Apparatus and process for refilling a bubbler
08/25/2005US20050183668 Plasma antenna
08/25/2005US20050183667 Magnetically enhanced, inductively coupled plasma source for a focused ion beam system
08/25/2005US20050183666 Shower plate having projections and plasma CVD apparatus using same
08/25/2005US20050183665 Apparatus for manufacturing flat-panel display
08/25/2005US20050183664 Batch-type deposition apparatus having gland portion
08/25/2005US20050183663 Systems and methods for manufacture of carbon nanotubes
08/25/2005DE102004003761A1 Herstellungsverfahren für Siliziumsolarzellen umfassend µc-Siliziumschichten Manufacturing processes for silicon solar cells comprising .mu.c silicon layers
08/25/2005CA2555032A1 Cylindrical microwave chamber
08/24/2005EP1566835A1 Insulating film material containing organic silane or organic siloxane compound, method for producing same, and semiconductor device
08/24/2005EP1566832A1 Method for producing semiconductor substrate and method for fabricating field effect transistor and semiconductor substrate and field effect transistor
08/24/2005EP1566468A2 Method for fabrication of integrated circuits and corresponding device
08/24/2005EP1566464A1 Apparatus and method for replenishing a bubbling device
08/24/2005EP1566081A1 Method and device for microwave plasma deposition of a coating on a thermoplastic container surface
08/24/2005EP1565930A2 Barrier coatings and methods in discharge lamps
08/24/2005EP1565929A2 Method for the production of a substrate and unit for the same
08/24/2005EP1565592A2 Method for cleaning a process chamber
08/24/2005EP1565415A1 Substrate and method for the formation of continuous magnesium diboride and doped magnesium diboride wires
08/24/2005EP1337700B1 Cvd reactor comprising a substrate holder rotatably mounted and driven by a gas flow
08/24/2005EP1235257B1 Semiconductor-manufacturing apparatus
08/24/2005EP1190111B1 Method of coating ceramics using ccvd
08/24/2005CN1659711A Semiconductor device and method for fabricating the same
08/24/2005CN1659685A An ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device
08/24/2005CN1659309A Deposition methods utilizing phased array microwave excitation, and deposition apparatuses
08/24/2005CN1659308A Gas distribution showerhead
08/24/2005CN1659307A Method and device for cleaning raw material gas introduction tube used in CVD film forming apparatus
08/24/2005CN1657650A High-temp. organic metal chemical vapor deposition device with connected multi-reaction chamerbers
08/24/2005CN1657649A Auxiliary device for changing gas-filling pipe in furnace tube
08/24/2005CN1657648A Chemical vapor deposition method for amorphous silicon and resulting thin film
08/24/2005CN1657647A Method for operating an in-line coating installation
08/24/2005CN1216415C Method of depositing metal film and metal deposition cluster including supercritical drying/cleaning module
08/24/2005CN1216404C Manufacturing method of semiconductor device
08/23/2005US6934312 System and method for fabricating efficient semiconductor lasers via use of precursors having a direct bond between a group III atom and a nitrogen atom
08/23/2005US6934142 Device and method for charge removal from dielectric surfaces
08/23/2005US6933568 Deposition method of insulating layers having low dielectric constant of semiconductor device, a thin film transistor substrate using the same and a method of manufacturing the same
08/23/2005US6933538 Plasma encapsulation for electronic and microelectronic components such as organic light emitting diodes
08/23/2005US6933508 Method of surface texturizing
08/23/2005US6933254 Plasma-resistant articles and production method thereof
08/23/2005US6933250 Process for manufacturing a semiconductor device
08/23/2005US6933249 Method of fabricating semiconductor device
08/23/2005US6933245 Method of forming a thin film with a low hydrogen content on a semiconductor device
08/23/2005US6933225 Graded thin films
08/23/2005US6933190 Semiconductor device having a capacitor with rare metal electrode
08/23/2005US6933066 Thermal barrier coating protected by tantalum oxide and method for preparing same
08/23/2005US6933060 Thermal barrier coating resistant to sintering
08/23/2005US6933025 Chamber having components with textured surfaces and method of manufacture
08/23/2005US6933021 Diffusion barrier; protective coatings; reacting titanium nitride with organosilicon compound
08/23/2005US6933019 Method of applying a uniform polymer coating
08/23/2005US6933011 alternatively reacting a surface of the substrate with a non-fluorine containing copper precursor and an oxygen containing gas, reducing the copper oxide layer by contacting the oxide layer with a hydrogen containing gas to form a copper
08/23/2005US6933010 Mixer, and device and method for manufacturing thin-film
08/23/2005US6933009 Thin-film deposition method