Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
11/2005
11/16/2005CN1227720C Method for manufacturing semiconductor device
11/16/2005CN1227710C Method and apparatus for producing uniform process rates
11/16/2005CN1227390C Surface treatment devices
11/16/2005CN1227385C Apparatus for surface modification of polymer, metal and ceramic materials using ion bean
11/15/2005US6965198 Pixels overcoating substrate; red, blue, green dopes; shadow masking
11/15/2005US6965115 Airtight processing apparatus, airtight processing method, and electron beam processing apparatus
11/15/2005US6964930 Method of fabricating dielectric layer
11/15/2005US6964914 Method of manufacturing a free-standing substrate made of monocrystalline semi-conductor material
11/15/2005US6964880 Methods for the control of flatness and electron mobility of diamond coated silicon and structures formed thereby
11/15/2005US6964876 Method and device for depositing layers
11/15/2005US6964790 Method for forming metallic tungsten film
11/15/2005CA2292370C Improved coating and method for minimizing consumption of base material during high temperature service
11/10/2005WO2005106977A1 Nitride semiconductor device and process for producing the same
11/10/2005WO2005106928A1 Method and apparatus for temperature control
11/10/2005WO2005106917A1 Method for the production of a disk-shaped workpiece based on a dielectric substrate, and vacuum processing system therefor
11/10/2005WO2005106067A2 Thin-film coating for wheel rims
11/10/2005WO2005106065A1 Dlc hard material coatings on bearing materials containing copper
11/10/2005WO2005071740A3 Limited thermal budget formation of pre-metal dielectric layers
11/10/2005US20050250348 In-situ oxide capping after CVD low k deposition
11/10/2005US20050250347 Method and apparatus for maintaining by-product volatility in deposition process
11/10/2005US20050250341 Method for manufacturing semiconductor device and substrate processing apparatus
11/10/2005US20050250340 HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance
11/10/2005US20050250338 Plasma device
11/10/2005US20050250325 Methods of forming metal-containing structures
11/10/2005US20050250318 CVD tantalum compounds for FET gate electrodes
11/10/2005US20050250302 Thin films and methods of making them
11/10/2005US20050249914 Honeycomb-shaped carbon element
11/10/2005US20050249888 Physical vapor deposition is augmented by chemical vapor deposition from one or more organometallic compounds, preferably refractory metal carbonyls, to deposit coatings and repair material on superalloy turbine engine parts
11/10/2005US20050249887 Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
11/10/2005US20050249876 Film forming apparatus and method
11/10/2005US20050249874 Deposition apparatus and deposition method, and process gas supply method
11/10/2005US20050249873 Apparatuses and methods for producing chemically reactive vapors used in manufacturing microelectronic devices
11/10/2005US20050247699 Resistive heaters and uses thereof
11/10/2005US20050247694 Resistive heaters and uses thereof
11/10/2005US20050247331 Device for deposition with chamber cleaner and method for cleaning the chamber
11/10/2005US20050247267 Molecular beam source for use in accumulation of organic thin-films
11/10/2005US20050247266 Simultaneous control of deposition time and temperature of multi-zone furnaces
11/10/2005US20050247265 Multi-workpiece processing chamber
11/10/2005US20050247260 Non-polar single crystalline a-plane nitride semiconductor wafer and preparation thereof
11/09/2005EP1593760A1 Non-polar single crystalline A-plane nitride semiconductor wafer and preparation thereof
11/09/2005EP1593756A1 CVD process.
11/09/2005EP1593755A1 Film forming apparatus and method
11/09/2005EP1593753A2 Method for ion implantation
11/09/2005EP1593752A2 Multi-component coating deposition
11/09/2005EP1593751A1 Member of apparatus for plasma treatment, member of treating apparatus, apparatus for plasma treatment, treating apparatus and method of plasma treatment
11/09/2005EP1593149A1 Fluorine-free plasma curing process for porous low-k-materials
11/09/2005EP1593147A1 Purged heater-susceptor for an ald/cvd reactor
11/09/2005EP1592822A2 Disk coating system
11/09/2005EP1466033B1 Emissivity-change-free pumping plate kit in a single wafer chamber
11/09/2005EP1145273B1 Low contamination high density plasma etch chambers and methods for making the same
11/09/2005EP1127366B8 Device for the plasma deposition of a polycrystalline diamond
11/09/2005CN1695257A Diffusion barrier coatings having graded compositions and devices incorporating the same
11/09/2005CN1695235A Plasma curing process for porous low-k materials
11/09/2005CN1695228A Backside heating chamber for emissivity independent thermal processes
11/09/2005CN1694978A Apparatus for the deposition of high dielectric constant films
11/09/2005CN1694977A High velocity method for deposing diamond films from a gaseous phase in shf discharge plasma and device for carrying out said method
11/09/2005CN1694230A Silicon nitride film and manufacturing method thereof
11/09/2005CN1693537A Very low temp. chamical gas-phase deposite technology of variable component independent of conformal, stress and chamical gas-phase deposite layer
11/09/2005CN1693536A Very low temp. chamical gas-phase deposite technology of varible component independent of conformal, stress and chamical gas-phase deposite layer
11/09/2005CN1693535A Method for depositing thin film and thin film deposition system having separate jet orifices for spraying purge gas
11/09/2005CN1693534A Multi-component coating deposition
11/09/2005CN1693533A Lomposite metallic inorganic source of zirconium hafnium and titanium composited anhydrous nitrate and its synthesis method
11/09/2005CN1226777C Plasma device and plasma generating method
11/09/2005CN1226450C Processing method and apparatus for plasma
11/09/2005CN1226449C Machine for coating hollow bodies
11/09/2005CN1226445C Low friction coating
11/08/2005US6963137 Low dielectric constant layers
11/08/2005US6963052 Heater module for semiconductor manufacturing equipment
11/08/2005US6962954 Activated polyethylene glycol compounds
11/08/2005US6962876 Method for forming a low-k dielectric layer for a semiconductor device
11/08/2005US6962859 Thin films and method of making them
11/08/2005US6962824 Method for controlling deposition of dielectric films
11/08/2005US6962732 Substrate temperature is controlled to establish a temperature profile particularly suited to the extreme temperature sensitivities of the deposition rates of organosilicate films
11/08/2005US6962664 modifying plasma density profile in plasma reactor to achieve an improved etch, deposition or other plasma process uniformity without design complexities and shortcomings associated with present-day segmented electrodes
11/08/2005US6962624 Method and device for depositing in particular organic layers using organic vapor phase deposition
11/08/2005US6962613 Low-temperature fabrication of thin-film energy-storage devices
11/08/2005US6962000 Cutting member with dual profile tip
11/08/2005CA2113366C Coated articles and method for the prevention of fuel thermal degradation deposits
11/03/2005WO2005104634A2 Method and system for performing atomic layer deposition
11/03/2005WO2005104207A1 Method for extending time between chamber cleaning processes
11/03/2005WO2005104206A1 Method of controlling the uniformity of pecvd-deposited thin films
11/03/2005WO2005104191A1 Methods for producing ruthenium film and ruthenium oxide film
11/03/2005WO2005104186A2 Method and processing system for plasma-enhanced cleaning of system components
11/03/2005WO2005104140A1 Low dielectric constant porous films
11/03/2005WO2005103328A1 Pulsed mass flow delivery system and method
11/03/2005WO2005103327A1 Method of improving the wafer to wafer uniformity and defectivity of a deposited dielectric film
11/03/2005WO2005103326A1 Carbon film
11/03/2005WO2005103325A1 A method for processing a substrate
11/03/2005WO2005103324A1 Process for coating the inside of a through-channel
11/03/2005WO2005103323A1 Method and apparatus for forming a metal layer
11/03/2005WO2005103318A1 High nucleation density organometallic compounds
11/03/2005WO2005102952A2 Photocatalytic substrate active under a visible light
11/03/2005WO2005102545A2 System and method of removing chamber residues from a plasma processing system in a dry cleaning process
11/03/2005WO2005038255A3 Evacuation apparatus
11/03/2005WO2005031042A3 Method and facility for the production of a band on a substrate band
11/03/2005US20050245099 Film formation apparatus and method of using the same
11/03/2005US20050245096 Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made
11/03/2005US20050245093 Atomic layer deposition methods and atomic layer deposition tools
11/03/2005US20050245081 Material for contact etch layer to enhance device performance
11/03/2005US20050245054 Method for producing a nitride semiconductor crystal layer, nitride semiconductor crystal layer and substrate for producing the same