Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
12/2005
12/08/2005WO2004114366A3 Hdp-cvd multistep gapfill process
12/08/2005US20050272965 Catalysts having catalytic material applied directly to thermally-grown alumina and catalytic methods using same, improved methods of oxidative dehydrogenation
12/08/2005US20050272273 Method and apparatus for electrostatically maintaining substrate flatness
12/08/2005US20050272271 Semiconductor processing method for processing substrate to be processed and its apparatus
12/08/2005US20050272269 Oxidizing method and oxidizing unit for object to be processed
12/08/2005US20050272261 Plasma chemical vapor deposition method and plasma chemical vapor deposition device
12/08/2005US20050272227 Plasma processing apparatus and method
12/08/2005US20050272200 Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin film
12/08/2005US20050271984 Textured chamber surface
12/08/2005US20050271900 Controlled vapor deposition of multilayered coatings adhered by an oxide layer
12/08/2005US20050271893 Controlled vapor deposition of multilayered coatings adhered by an oxide layer
12/08/2005US20050271831 Surface treating method for substrate
12/08/2005US20050271830 Chemical vapor deposition method
12/08/2005US20050271818 Method for forming thin film, apparatus for forming thin film, and method for monitoring thin film forming process
12/08/2005US20050271817 Method for preparation of aluminum oxide thin film
12/08/2005US20050271814 High speed, concurrent processing of multiple wafers using multi-stations separated by gas curtains where platens support and rotates wafers into specific deposition positions and where reactant gases are supplied through single- or multi-zone gas dispensing nozzles; atomic layer deposition
12/08/2005US20050271813 Apparatuses and methods for atomic layer deposition of hafnium-containing high-k dielectric materials
12/08/2005US20050271812 Apparatuses and methods for atomic layer deposition of hafnium-containing high-k dielectric materials
12/08/2005US20050271811 Method of manufacturing nanostructure arrays
12/08/2005US20050271810 A siloxane substrate surface treated using ozone and UV radiation to render the siloxane surface more hydrophilic; subsequently a functional coating is applied in-situ over the treated siloxane substrate; bonding strength; microfluidics; uniform, functional coating on a nanometer scale; grafts
12/08/2005US20050271809 Controlled deposition of silicon-containing coatings adhered by an oxide layer
12/08/2005US20050271796 Thin-film electrochemical devices on fibrous or ribbon-like substrates and method for their manufacture and design
12/08/2005US20050271563 Protected alloy surfaces in microchannel apparatus and catalysts, alumina supported catalysts, catalyst intermediates, and methods of forming catalysts and microchannel apparatus
12/08/2005US20050271544 Articles of manufacture containing increased stability low concentration gases and methods of making and using the same
12/08/2005US20050271514 Coating and coating process incorporating raised surface features for an air-cooled surface
12/08/2005US20050270895 Chemical processing system and method
12/08/2005US20050269651 Method for forming a dielectric stack
12/08/2005US20050269310 Transparent high temperature resistant and protective coating for domestic appliances and method for its deposition
12/08/2005US20050269021 Forming separation layer on base having single crystal or textured surface, buffer layer, metal oxide layer, and removing separation layer; for multilayer superconductive tapes, ferroelectric multilayer thin films, and optoelectronic devices
12/08/2005US20050268857 Uniformly compressed process chamber gate seal for semiconductor processing chamber
12/08/2005US20050268856 Reactors, systems and methods for depositing thin films onto microfeature workpieces
12/08/2005US20050268853 Vapor phase deposition apparatus, method for depositing thin film and method for manufacturing semiconductor device
12/08/2005US20050268852 Vaccum film-forming apparatus
12/08/2005US20050268851 Method for processing interior of vapor phase deposition apparatus, method for depositing thin film and method for manufacturing semiconductor device
12/08/2005US20050268850 Plasma processing system
12/08/2005US20050268848 Atomic layer deposition apparatus and process
12/08/2005DE20221269U1 Gaszuführvorrichtung zur Abscheidung atomarer Schichten The gas supply apparatus for atomic layer deposition
12/08/2005DE10341020B4 Verfahren zum Innenbeschichten von Hohlkörpern A method for coating the inside of hollow bodies
12/08/2005DE102004030138A1 Atomic layer deposition unit comprises a reactor chamber with a substrate holder, a heater, a pump and a carrier gas source
12/08/2005DE10164603B4 Verfahren zur Erzeugung einer Eisennitriddünnschicht und Eisennitriddünnschicht Method for producing a Eisennitriddünnschicht and Eisennitriddünnschicht
12/07/2005EP1603154A2 Apparatus and method for surface finishing a silicon film
12/07/2005EP1602748A1 Microwave plasma processing device and plasma processing gas supply member
12/07/2005EP1602633A1 Manufacturing process for coatings which increase transmittance and reduce reflectance
12/07/2005EP1601888A2 One piece shim
12/07/2005EP1601887A2 One piece shim
12/07/2005EP1601815A2 Wear resistant coatings to reduce ice adhesion on air foils
12/07/2005EP1601813A1 Method for depositing silicon
12/07/2005EP1601812A2 Nanolayer deposition process
12/07/2005EP1601471A2 Gas gate for isolating regions of differing gaseous pressure
12/07/2005EP1601463A1 Catalyst structure particularly for the production of field emission flat screens
12/07/2005CN1706031A Substrate processing device
12/07/2005CN1705769A Method for producing semi-conducting devices and devices obtained with this method
12/07/2005CN1705768A Apparatus and method for depositing an oxide film
12/07/2005CN1705767A Silicon-containing layer deposition with silicon compounds
12/07/2005CN1705766A Multilayer film-coated substrate and process for its production
12/07/2005CN1704501A Film formation source, vacuum film formation apparatus, organic EL panel and method of manufacturing the same
12/07/2005CN1231097C Inductance coupling plasma processing apparatus
12/07/2005CN1230871C Heat treatment device and heat treatment method
12/07/2005CN1230868C Semiconductor processing equipment having improved particle pollution performance
12/07/2005CN1230304C Passivation method of ink-jet print heads
12/07/2005CN1230255C Nozzle and its using method
12/06/2005US6972267 Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
12/06/2005US6972239 Low temperature MOCVD processes for fabrication of PrXCa1-xMnO3 thin films
12/06/2005US6972071 High-speed symmetrical plasma treatment system
12/06/2005US6972055 Continuous flow deposition system
12/06/2005US6972050 Method for depositing in particular crystalline layers, and device for carrying out the method
12/06/2005US6971835 Vapor-phase epitaxial growth method
12/06/2005CA2292437C Pulsed-vapor phase aluminide process for high temperature oxidation-resistant coating applications
12/01/2005WO2005113858A1 Method for applying hot-gas anticorrosive coatings
12/01/2005WO2005113857A1 Bubbler for constant vapor delivery of a solid chemical
12/01/2005WO2005113856A1 Plasma enhanced chemical vapor deposition of metal oxide
12/01/2005WO2005113855A1 Apparatuses and methods for atomic layer deposition of hafnium-containing high-k dielectric materials
12/01/2005WO2005113854A2 Apparatus and methods of making nanostructures by inductive heating
12/01/2005WO2005113853A1 Methods and apparatuses for transferring articles through a load lock chamber under vacuum
12/01/2005WO2005113852A2 Apparatuses and methods for atomic layer deposition
12/01/2005WO2005113134A1 Method for oxidizing substance and oxidation apparatus therefor
12/01/2005WO2005075341A3 Method for obtaining carbon nanotubes on supports and composites comprising same
12/01/2005WO2004063422B1 Method for curing low dielectric constant film using direct current bias
12/01/2005US20050267305 Volatile copper(II) complexes for deposition of copper films by atomic layer deposition
12/01/2005US20050267253 vapor-deposited organosiloxane copolymer film; first organosiloxane monomer with cyclosiloxane backbone and the second organosiloxane monomer with straight-chain siloxane backbone as raw materials
12/01/2005US20050267229 Method for producing poly(methyl methacrylate)-metal cluster composite
12/01/2005US20050266700 Codeposition of hafnium-germanium oxides on substrates used in or for semiconductor devices
12/01/2005US20050266685 Method and apparatus for controlling a semiconductor fabrication temperature
12/01/2005US20050266682 Methods and apparatus for forming barrier layers in high aspect ratio vias
12/01/2005US20050266253 Glass sheet with conductive film
12/01/2005US20050266174 Methods and apparatus for reducing arcing during plasma processing
12/01/2005US20050266163 Extremely strain tolerant thermal protection coating and related method and apparatus thereof
12/01/2005US20050265512 Dielectric coating for surfaces exposed to high temperature water
12/01/2005US20050264090 Aircraft wheel part having improved corrosion resistance
12/01/2005US20050263901 Semiconductor device formed by in-situ modification of dielectric layer and related methods
12/01/2005US20050263900 Semiconductor device having silicon carbide and conductive pathway interface
12/01/2005US20050263803 Semiconductor device includes gate insulating film having a high dielectric constant
12/01/2005US20050263719 Ultraviolet ray generator, ultraviolet ray irradiation processing apparatus, and semiconductor manufacturing system
12/01/2005US20050263436 Coal tar and hydrocarbon mixture pitch production using a high efficiency evaporative distillation process
12/01/2005US20050263390 A tantalum nitride/Ta barrier is first sputter deposited with high target power and wafer bias, argon etching is performed with even higher wafer bias. a flash step is applied with reduced target power and wafer bias; different magnetic field distributions
12/01/2005US20050263248 Blocker plate bypass to distribute gases in a chemical vapor deposition system
12/01/2005US20050263078 Drive mechanism for a vacuum treatment apparatus
12/01/2005US20050263076 Atomic layer deposition apparatus having improved reactor and sample holder
12/01/2005US20050263075 Delivery systems for efficient vaporization of precursor source material
12/01/2005US20050263074 Film formation source, vacuum film formation apparatus, organic EL panel and method of manufacturing the same