Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
01/2006
01/26/2006WO2006008882A1 A method of evaluating charcteristics of and forming of an insulating film for a semiconductor device
01/26/2006WO2006008521A1 Gas abatement
01/26/2006WO2006008384A1 Divided solid composition composed of grains provided with continuous metal deposition, method for the production and use thereof in the form of a catalyst
01/26/2006WO2006007607A1 Cutting insert provided with structured surfaces
01/26/2006WO2005090638A9 Remote chamber methods for removing surface deposits
01/26/2006US20060019502 Method of controlling the film properties of a CVD-deposited silicon nitride film
01/26/2006US20060019494 Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
01/26/2006US20060019475 Method of depositing polysilicon
01/26/2006US20060019471 Method for forming silicide nanowire
01/26/2006US20060019442 Method of forming a capacitor
01/26/2006US20060019157 Thin-film battery devices and apparatus for making the same
01/26/2006US20060019117 For turning of stainless steel; cemented carbide substrate and a post-treated coating; high performance tool for high cutting speeds
01/26/2006US20060019104 Coated substrates
01/26/2006US20060019033 Plasma treatment of hafnium-containing materials
01/26/2006US20060019032 Low thermal budget silicon nitride formation for advance transistor fabrication
01/26/2006US20060019031 Deposition repeatability of PECVD films
01/26/2006US20060019030 Using physical and photochemical vapor deposition in conjunction with positioning the substrate a desired distance from a blocking device or at a desired speed, so that reflected light from the modified substrate is trapezoidal; lithography
01/26/2006US20060019029 Atomic layer deposition methods and apparatus
01/26/2006US20060019025 Method for test marking of glass during production
01/26/2006US20060017120 Semiconductor-ferroelectric storage device and its manufacturing method
01/26/2006US20060017073 Semiconductor device and method of fabricating the same
01/26/2006US20060016554 Substrate holder having electrostatic chuck and method of fabricating the same
01/26/2006US20060016459 High rate etching using high pressure F2 plasma with argon dilution
01/26/2006US20060016398 Supporting and lifting device for substrates in vacuum
01/26/2006US20060016397 Method of manufacturing semiconductor light emitting device and oxidation furnace
01/26/2006US20060016396 Apparatus for depositing a thin film on a substrate
01/26/2006US20060016395 Plasma processing apparatus
01/26/2006DE102005030359A1 Apparatus for forming thin film on substrate, has chamber with gas inlet, upper electrode, lower electrode, and selective injection plate including selective injection valve for selectively concentrating gas
01/26/2006DE10038887B4 Verfahren zum Verhindern des Wachstums natürlichen Oxids während der Nitrierung A method for preventing the growth of native oxide during the nitration
01/26/2006CA2570590A1 Divided solid composition composed of grains provided with continuous metal deposition, method for the production and use thereof in the form of a catalyst
01/25/2006EP1619717A1 Device for applying semiconductor treatment to treatment subject substrate
01/25/2006EP1619699A1 Foil for negative electrode of capacitor and process for producing the same
01/25/2006EP1619269A2 Method for enhancing fluorine utilization
01/25/2006EP1619268A2 Process for titanium nitride removal
01/25/2006EP1619267A2 Method for removing carbon-containing residues from a substrate
01/25/2006EP1619266A1 Method and apparatus for chemical plasma processing of plastic container
01/25/2006EP1619265A1 Method and system for coating internal surfaces of prefabricated process piping in the field
01/25/2006EP1618227A1 Method and device for depositing semiconductor layers using two process gases, of which one is preconditioned
01/25/2006EP1618225A2 Porous materials functionalized by vacuum deposition
01/25/2006EP1618080A2 Oxidation inhibition of carbon-carbon composites
01/25/2006EP1617955A2 Products for treating and preventing chronic diseases: eliminating the autoimmune triggers that underly chronic disease
01/25/2006CN2753743Y Apparatus for preparing isotropic pyrolytic carbon material for big-size mechanical sealing
01/25/2006CN1726745A Plasma generation device, plasma control method, and substrate manufacturing method
01/25/2006CN1726584A A device and method for controlling plasma with an adjustable coupling to ground circuit
01/25/2006CN1726310A Plating solutions for electrochemical or chemical deposition of copper interconnects and methods therefor
01/25/2006CN1726303A Atomic layer deposition using metal amidinates
01/25/2006CN1726155A Packaging material
01/25/2006CN1725452A Semiconductor device and manufacturing method thereof
01/25/2006CN1724704A Deposition repeatability of pecvd films
01/25/2006CN1724343A Method for large-batch preparing overlength carbon nano pipe array and its apparatus
01/25/2006CN1238881C Gas distribution apparatus for semiconductor processing
01/25/2006CN1238721C Sample analyzing method
01/25/2006CN1238576C Baseless reactor for growing epitaxial layers by chemical vapor deposition
01/25/2006CN1238555C Chemical gas phase deposit method for non-crystalline silicon and formied film
01/24/2006USRE38937 Susceptor for vapor-phase growth apparatus
01/24/2006US6989573 Lanthanide oxide/zirconium oxide atomic layer deposited nanolaminate gate dielectrics
01/24/2006US6989457 Chemical vapor deposition precursors for deposition of tantalum-based materials
01/24/2006US6989335 Composite dielectric forming methods and composite dielectrics
01/24/2006US6989321 Low-pressure deposition of metal layers from metal-carbonyl precursors
01/24/2006US6989304 Method for manufacturing a ruthenium film for a semiconductor device
01/24/2006US6989281 Cleaning method for a semiconductor device manufacturing apparatus
01/24/2006US6989202 comprises sapphire single crystal substrate and contoured/flat underfilm; usable for semiconductor films constituting light-emitting diode or high velocity integrated circuit chip
01/24/2006US6989174 vapor phase aluminizing of aircraft blades or turbines; protective coatings having oxidation and corrosion resistance
01/24/2006US6988886 Thermal treatment system for semiconductors
01/24/2006US6988463 Ion beam source with gas introduced directly into deposition/vacuum chamber
01/19/2006WO2006007336A2 Atmospheric glow discharge with concurrent coating deposition
01/19/2006WO2006007313A2 Improving water-barrier performance of an encapsulating film
01/19/2006WO2006007156A1 Fabrication of crystalline materials over substrates
01/19/2006WO2006006991A1 Method and processing system for controlling a chamber cleaning process
01/19/2006WO2006006584A1 Vapor phase growing equipment
01/19/2006WO2006005907A2 Pump cleaning
01/19/2006WO2006005837A2 Device for microwave plasma deposition of a coating on a surface of a thermoplastic container
01/19/2006WO2006005637A1 Method for the deposition of layers containing silicon and germanium
01/19/2006WO2006005200A1 CONDUCTIVE MATERIAL COMPRISING AN Me-DLC HARD MATERIAL COATING
01/19/2006US20060014367 Nucleation and deposition of platinum group metal films using ultraviolet irradiation
01/19/2006US20060013966 Crucible for evaporation of raw materials
01/19/2006US20060013965 Method of forming a coating on a plastic glazing
01/19/2006US20060013964 Apparatus and method for focused electric field enhanced plasma-based ion implantation
01/19/2006US20060013958 Applying adhesion promoting agent to articles such as certain interior and exterior parts on automobiles; applying a protective and decorative coating system
01/19/2006US20060013955 Deposition of ruthenium and/or ruthenium oxide films
01/19/2006US20060013954 Method for improving atomic layer deposition process and the device thereof
01/19/2006US20060013949 Vapor deposition crucible
01/19/2006US20060013946 Methods of forming a thin film structure, and a gate structure and a capacitor including the thin film structure
01/19/2006US20060013945 Apparatus and method for making a light-emitting display
01/19/2006US20060013943 tethered amine tantalum complexes for forming barrier layer on microelectronic device; useful in depositing tantalum nitride or tantalum oxides
01/19/2006US20060012790 Apparatus and method for inspecting golf balls using spectral analysis
01/19/2006US20060011609 Effusion cell and method for use in molecular beam deposition
01/19/2006US20060011583 Materials and gas chemistries for processing systems
01/19/2006US20060011298 Showerhead with branched gas receiving channel and apparatus including the same for use in manufacturing semiconductor substrates
01/19/2006US20060011297 Semiconductor manufacturing apparatus
01/19/2006US20060011231 Method for forming thin film and apparatus therefor
01/19/2006US20060011140 Single-sided inflatable vertical slit valve
01/19/2006US20060011139 Heated substrate support for chemical vapor deposition
01/19/2006US20060011138 Apparatus for fabricating semiconductor device using plasma
01/19/2006US20060011137 Shadow frame with mask panels
01/19/2006US20060011136 Manufacturing apparatus
01/19/2006US20060011135 HVPE apparatus for simultaneously producing multiple wafers during a single epitaxial growth run
01/19/2006US20060011131 SiC material, semiconductor device fabricating system and SiC material forming method
01/19/2006DE10394037T5 Metallsulfidfilm und Verfahren zu dessen Herstellung Metal sulfide film and process for its preparation
01/19/2006DE10152536B4 Verfahren und Vorrichtung zum Reduzieren einer Emission von Perfluorverbindungen (PFC-Emission) während der Halbleiterherstellung Method and apparatus for reducing the emission of perfluorocompounds (PFC emissions) during semiconductor manufacture