Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
12/2005
12/29/2005US20050287297 Apparatus and methods of making nanostructures by inductive heating
12/29/2005US20050287296 Method and apparatus for dispersion strengthened bond coats for thermal barrier coatings
12/29/2005US20050287288 Strengthening the ceramic ball of a hip prosthesis by ion beam implantation to induce controlled bilateral compressive stress on the load-bearing surface and not make the ceramic amorphous; coating with a diamond-like-coating of bonding, amorphous, crosslinked carbon network; durability; noncracking
12/29/2005US20050285982 Apparatus for manufacturing liquid crystal display device and liquid crystal display device manufactured using the same
12/29/2005US20050285225 Semiconductor constructions comprising cerium oxide and titanium oxide
12/29/2005US20050285103 Methods of forming semiconductor constructions comprising cerium oxide and titanium oxide
12/29/2005US20050284575 Processing system and operating method of processing system
12/29/2005US20050284550 Method and apparatus for treating substrates in a rotary installation
12/29/2005US20050284375 Method and apparatus for processing a workpiece
12/29/2005US20050284374 Expanded thermal plasma apparatus
12/29/2005US20050284373 Apparatus for manufacturing a luminescent device using a buffer cassette
12/29/2005US20050284372 Chamber component having grooved surface with depressions
12/29/2005US20050284371 Deposition apparatus for providing uniform low-k dielectric
12/29/2005US20050284370 High rate atomic layer deposition apparatus and method of using
12/29/2005US20050284360 Atomic layer deposition using electron bombardment
12/29/2005DE19752637B4 Verfahren zur Herstellung einer Leitungsanordnung einer Halbleitereinrichtung A process for producing a line arrangement of a semiconductor device
12/29/2005DE10393964T5 Diamantbeschichtetes Silizium und Herstellungsverfahren dafür A diamond-coated silicon and production method thereof
12/29/2005DE102004029677A1 Verfahren und Vorrichtung zur Plasmabehandlung von Werkstücken Method and apparatus for plasma treatment of workpieces
12/29/2005DE102004028030A1 Beschichtungsverfahren für strukturierte Substratoberflächen Coating method for structured substrate surfaces
12/29/2005DE102004025083A1 Production of a solid body electrolyte material region made from a chalcogenide material comprises using germanium and/or silicon as precursor compound or carrier compound in the form of an organic compound
12/29/2005DE102004016436B3 Process of manufacturing self-cleaning window glass or glass building facade involves atomised application of silicon agent to titanium oxide surface
12/28/2005EP1610374A1 Silicon wafer heat treatment jig, and silicon wafer heat treatment method
12/28/2005EP1610369A1 Plasma film-forming method and plasma film-forming apparatus
12/28/2005EP1610368A1 Plasma processing apparatus and method
12/28/2005EP1610053A2 Fluid storage and dispensing system
12/28/2005EP1609884A1 Thin film forming apparatus and method for forming thin film
12/28/2005EP1609883A2 Coated metal cutting tool
12/28/2005EP1609878A1 Carbon-coated aluminum and method for producing same
12/28/2005EP1608794A1 Method for depositing compounds on a substrate by means of metalorganic chemical vapor deposition
12/28/2005EP1608793A1 Titania coatings
12/28/2005EP1608792A2 A method and apparatus for forming a high quality low temperature silicon nitride film
12/28/2005EP1456871A4 Susceptor for epitaxial growth and epitaxial growth method
12/28/2005EP1453595B1 Plasma treatment of porous materials
12/28/2005EP1294959B1 Method for producing a multi-functional, multi-ply layer on a transparent plastic substrate and a multi-functional multi-ply layer produced according to said method
12/28/2005EP0938634B1 Gas panel
12/28/2005EP0920435B1 Random access memory device and platinum chemical vapour deposition process used in its preparation
12/28/2005CN1714434A Dielectric film forming method
12/28/2005CN1714430A Plasma processing apparatus and plasma processing method
12/28/2005CN1714169A Support system for a treatment apparatus
12/28/2005CN1714168A Two-layer film for next generation damascene barrier application with good oxidation resistance
12/28/2005CN1713355A Manufacturing method of semiconductor device
12/28/2005CN1712561A Gas mixer
12/28/2005CN1712560A Vertical CVD apparatus and CVD method using the same
12/28/2005CN1234133C Preparation method of high-temp. superconducting layer
12/28/2005CN1233870C Method of coating diamond on gradient hard alloy with cobalt-lean surface layer
12/27/2005US6979657 Method for forming a dielectric layer in a semiconductor device
12/27/2005US6979370 Methods, complexes, and system for forming metal-containing films
12/27/2005US6979369 Fixing structures and supporting structures of ceramic susceptors, and supporting members thereof
12/27/2005US6979368 Apparatus and method for producing a semiconductor device including a byproduct control system
12/27/2005US6979367 Method of improving surface planarity
12/27/2005US6978984 Raw material providing device for chemical vapor deposition process
12/27/2005CA2276000C Vapor deposition apparatus
12/27/2005CA2196894C Apparatus for and method of manufacturing plastic container coated with carbon film
12/22/2005WO2005122229A1 Material for forming capacitor film
12/22/2005WO2005121417A1 Support system for treatment apparatuses
12/22/2005WO2005121401A1 Thin film-forming material and method for producing thin film
12/22/2005WO2005121400A1 Solution raw material for organic metal chemical vapor deposition and complex oxide dielectric thin film formed by using such raw material
12/22/2005WO2005121399A1 Precursors for deposition of silicon nitride, silicon oxynitride and metal silicon oxynitrides
12/22/2005WO2005121398A1 Thin diamond film coating method and cemented carbide member coated with diamond thin film
12/22/2005WO2005121397A2 Controlled vapor deposition of multilayered coatings adhered by an oxide layer
12/22/2005WO2005121396A2 Controlled deposition of silicon-containing coatings adhered by an oxide layer
12/22/2005WO2005121388A1 Al2o3 ceramic tools with diffusion bonding enhanced layer
12/22/2005WO2005121047A1 Boron-containing layer system comprising a boron carbide layer, a b-c-n layer, and a carbon-modified hexahedral boron nitride layer, and method for the production of such a layer system
12/22/2005WO2005120684A1 Non-thermal plasma reactor for low pressure drop and low specific energy density
12/22/2005WO2004063421A3 Deposition chamber surface enhancement and resulting deposition chambers
12/22/2005US20050283012 Copper (I) compounds useful as deposition precursors of copper thin films
12/22/2005US20050282400 Method of forming a dielectric film
12/22/2005US20050282398 Oxygen plasma treatment for enhanced HDP-CVD gapfill
12/22/2005US20050282378 Interconnects forming method and interconnects forming apparatus
12/22/2005US20050282372 Semiconductor device and a method of manufacture therefor
12/22/2005US20050282365 Film formation apparatus and method for semiconductor process
12/22/2005US20050282328 Removal of carbon from an insulative layer using ozone
12/22/2005US20050282034 Ceramic or a metal base covered with a physically vapor deposited film formed from a group 3 compound such as Y2O3, with a value of ratio I400/I222 of peak intensity I400 assignable to (400) plane to peak intensity I222 assignable to (222) plane of X-ray diffraction not higher than 0.5.
12/22/2005US20050281960 Transporting cellulose ester substrate to gap formed between electrodes; subjecting the first surface of substrate to plasma discharge treatment to form the layer at atmospheric pressure while supplying reactive gas
12/22/2005US20050281959 Plasma generating apparatus and method of forming alignment film of liquid crystal display using the same
12/22/2005US20050281952 Copper (i) compounds useful as deposition precursors of copper thin films
12/22/2005US20050281951 Dielectric barrier discharge method for depositing film on substrates
12/22/2005US20050281950 Deposition apparatus and method
12/22/2005US20050281949 Massively parallel atomic layer deposition/chemical vapor deposition system
12/22/2005US20050279642 Common rack for electroplating and PVD coating operations
12/22/2005US20050279456 Plasma reactor with high productivity
12/22/2005US20050279454 Pressure control system
12/22/2005US20050279384 Method and processing system for controlling a chamber cleaning process
12/22/2005US20050279382 Method for cleaning a process chamber
12/22/2005US20050279285 Phosphor sheet manufacturing apparatus
12/22/2005US20050279284 Temperature control system
12/22/2005US20050279282 Method and apparatus for processing a semiconductor substrate
12/22/2005US20050279281 Substrate processing apparatus
12/22/2005US20050279138 Method and device for heat treatment
12/22/2005DE102005023670A1 Metal wiring layer formation, for integrated circuit, involves forming metal nitride layer in contact hole, such that concentration of metal nitride layer at bottom of hole is less than that of metal nitride layer at opening of hole
12/22/2005DE102005020666A1 Filmbildungsquelle, vakuumunterstützte Vorrichtung zur Filmbildung, Verfahren zur Herstellung eines organischen elektrolumineszierenden Bauelements, und organisches elektrolumineszierendes Bauelement Film-forming source, vacuum-assisted apparatus for film formation, method of manufacturing an organic electroluminescent device, and organic electroluminescent device
12/22/2005DE102004026344A1 Verfahren zum Herstellen einer hydrophoben Beschichtung, Vorrichtung zum Durchführen des Verfahrens und Substrat mit einer hydrophoben Beschichtung A method for producing a hydrophobic coating apparatus for performing the method and substrate with a hydrophobic coating
12/22/2005DE102004026121A1 Vapor phase deposition of high melting point substances as layers on substrate, employs beam to heat target, and plasma beam to transport liberated vapor to substrate
12/22/2005DE102004010094B3 Halbleiterbauelement mit mindestens einer organischen Halbleiterschicht und Verfahren zu dessen Herstellung A semiconductor device comprising at least one organic semiconductor layer, and process for its preparation
12/22/2005CA2566173A1 Al2o3 ceramic tools with diffusion bonding enhanced layer
12/21/2005EP1608007A1 Method for forming insulating film in semiconductor device
12/21/2005EP1608006A1 Film formation apparatus
12/21/2005EP1608005A1 Vaporizer, film forming apparatus including the same, method of vaporization and method of forming film
12/21/2005EP1608000A2 RF plasma processor
12/21/2005EP1607498A1 Method for forming oxide coating film, oxide coating film and coating film structure