Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
01/2006
01/10/2006US6984288 Plasma processor in plasma confinement region within a vacuum chamber
01/10/2006US6984267 Manufacture system for semiconductor device with thin gate insulating film
01/10/2006US6983892 Gas distribution showerhead for semiconductor processing
01/10/2006US6983718 Electron beam physical vapor deposition apparatus
01/10/2006US6983620 are located in a process chamber of a chemical vapor deposition (CVD) reactor on substrate holders carried on dynamic gas cushions by a substrate holder carrier
01/05/2006WO2006001840A2 System and method for quality testing of superconductivity tape
01/05/2006WO2006000846A1 System for low-energy plasma-enhanced chemical vapor deposition
01/05/2006WO2006000644A1 Selective doping of a material
01/05/2006WO2006000599A1 Lens-coating gas dispenser and corresponding coating device, lens and method
01/05/2006WO2006000561A2 Container-treatment machine comprising controlled gripping means for seizing containers by the neck
01/05/2006WO2006000539A1 Machine for the treatment of bottles that are equipped with an interchangeable connection cartridge
01/05/2006WO2005108643A8 Method and device for the low-temperature epitaxy on a plurality of semiconductor substrates
01/05/2006WO2005027189A3 Formation of a metal-containing film by sequential gas exposure in a batch type processing system
01/05/2006US20060003603 Method and apparatus for processing
01/05/2006US20060003585 Method of making iron silicide and method of making photoelectric transducer
01/05/2006US20060003565 Method and apparatus for manufacturing semiconductor device
01/05/2006US20060003545 Method of making scratch resistant coated glass article including layer(s) resistant to fluoride-based etchant(s)
01/05/2006US20060003517 Atomic layer deposited Zr-Sn-Ti-O films using TiI4
01/05/2006US20060003484 Using deuterated source gasses to fabricate low loss GeSiON SiON waveguides
01/05/2006US20060003237 Transparent amorphous carbon structure in semiconductor devices
01/05/2006US20060003227 Silicon composite, making method, and non-aqueous electrolyte secondary cell negative electrode material
01/05/2006US20060003178 minimizing the H2O levels within the treater improves the characteristics of the treated surface, such as by increasing the amount of nitrogen that is affixed by the discharge, lessening the sensitivity of the surface properties to exposure to water, and improving the wetting properties
01/05/2006US20060003108 Method for production of transmission-enhancing and/or reflection-reducing optical coatings
01/05/2006US20060003102 Atomic layer deposition method of forming an oxide comprising layer on a substrate
01/05/2006US20060003101 Method of pre-cleaning wafer for gate oxide formation
01/05/2006US20060003100 CVD process to deposit aluminum oxide coatings
01/05/2006US20060003099 Vapor deposition and in-situ purification of organic molecules
01/05/2006US20060003094 Forming a film of water to a plastic lens having an organosilicon compound-containing hard coat film; treating the surface with ozone; and forming the antireflection film on the surface of the hard coat film through vapor deposition.
01/05/2006US20060003087 Process for producing plasma display panel and apparatus therefor
01/05/2006US20060001151 Atomic layer deposited dielectric layers
01/05/2006US20060001066 Semiconductor Constructions
01/05/2006US20060001012 Method for manufacturing nanostructured manganese oxide having dendritic structure, and oxygen reduction electrode comprising nanostructured transition metal oxide having dendritic structure
01/05/2006US20060000800 Process monitoring methods in a plasma processing apparatus, monitoring units, and a sample processing method using the monitoring units
01/05/2006US20060000552 Plasma processing apparatus and cleaning method thereof
01/05/2006US20060000414 Semiconductor processing equipment for forming films of uniform properties on semiconductor substrates
01/05/2006US20060000413 Apparatus for an optimized plasma chamber top piece
01/05/2006US20060000412 Systems and apparatus for atomic-layer deposition
01/05/2006US20060000411 Method of forming a layer on a semiconductor substrate and apparatus for performing the same
01/05/2006DE102004029466A1 Medieninjektor Medieninjektor
01/05/2006DE102004028369A1 Verfahren und Vorrichtung zum Behandeln von Substraten in einer Rundläuferanlage Method and apparatus for treating substrates in a rotary system
01/05/2006DE102004028112A1 Borhaltiges Schichtsystem, bestehend aus einer Borcarbid-, einer BCN und einer kohlenstoffmodifizierten kubischen Bornitridschicht sowie Verfahren zur Herstellung eines solchen Schichtsystems Boron-containing layer system consisting of a boron carbide, a BCN and a carbon-modified cubic boron nitride as well as methods for producing such a layer system
01/05/2006DE102004028031A1 Selective coating method used in the semiconductor industry comprises preparing a substrate, covering predetermined surface regions of a surface with a mask, inserting a coating controlling agent and catalytically depositing a thin layer
01/05/2006DE102004015217A1 Verfahren zur Ausbildung dünner Schichten aus Siliziumnitrid auf Substratoberflächen A method for forming thin layers of silicon nitride on substrate surfaces,
01/05/2006DE10136400B4 Verfahren zur Herstellung einer Metallkarbidschicht und Verfahren zur Herstellung eines Grabenkondensators A process for preparing a metal carbide and method for producing a capacitor grave
01/05/2006CA2574771A1 Selective doping of a material
01/04/2006EP1613133A2 Atmospheric plasma method for treating sheet electricity conducting materials and device therefor
01/04/2006EP1612857A1 Cvd apparatus and method for cleaning cvd apparatus
01/04/2006EP1612856A1 Device for cleaning cvd device and method of cleaning cvd device
01/04/2006EP1612854A1 Loading table and heat treating apparatus having the loading table
01/04/2006EP1612853A1 Cooling device for vacuum treatment device
01/04/2006EP1611601A2 Substrate support having temperature controlled surface
01/04/2006EP1611405A2 Amorphous carbon layer for heat exchangers
01/04/2006EP1332650B1 Atmospheric plasma method for treating sheet electricity conducting materials and device therefor
01/04/2006EP0990061B1 Method and device for vacuum-coating a substrate
01/04/2006CN1717961A Method and device for microwave plasma deposition of a coating on a thermoplastic container surface
01/04/2006CN1717791A Method for cleaning substrate processing chamber
01/04/2006CN1717788A Plasma processing method and apparatus
01/04/2006CN1717782A Vaporizer for CVD, solution voporizing CVD device and voporization method for CVD
01/04/2006CN1716548A Doped nitride film, doped oxide film and other doped films
01/04/2006CN1716538A Film formation apparatus and film forming device
01/04/2006CN1716524A Refurbishment of a coated chamber component
01/04/2006CN1716012A Apparatus for manufacturing liquid crystal display device and liquid crystal display device manufactured using the same
01/04/2006CN1715442A Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition
01/04/2006CN1235272C Microwave plasma processing device, plasma processing method, and microwave radiating member
01/04/2006CN1235269C Semiconductor device and making method thereof
01/04/2006CN1234909C Method for forming film by using atomic layer deposition method
01/04/2006CN1234908C Gas supply device for precursors with low vapor pressure to CVD-coating device
01/04/2006CN1234907C Chemical vapor deposition method using alcohol for forming metal oxide thin film
01/03/2006US6982341 Volatile copper aminoalkoxide complex and deposition of copper thin film using same
01/03/2006US6982230 Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
01/03/2006US6982214 Method of forming a controlled and uniform lightly phosphorous doped silicon film
01/03/2006US6982133 Damage-resistant coatings for EUV lithography components
01/03/2006US6982121 Anodization-adapted aluminum alloy and plasma-treating apparatus made thereof
01/03/2006US6982103 Changing the flow rate of oxidizer and/or metal precursors to the reactor to effect a change in stoichiometry in the mixed oxide thin film; high dielectric constants for capacitors
01/03/2006US6981508 For semiconductor and flat panel display manufacturing; converting a hydrogen fluoride feed gas to fluorine cleaning gas; separating HF from F2 by cryogenic condensation; activating F2 then pumping to CVD chamber; minimal pollution
01/03/2006US6981465 Chemical vapor deposition process and apparatus thereof
01/03/2006CA2122505C Process for the preparation of a silicon oxide coating on a moving solid substrate
12/2005
12/29/2005WO2005124849A2 System and method for forming multi-component dielectric films
12/29/2005WO2005124847A1 Semiconductor device and manufacturing method thereof
12/29/2005WO2005124845A1 Substrate processing equipment and semiconductor device manufacturing method
12/29/2005WO2005124829A2 In-line heater for use in semiconductor wet chemical processing and method of manufacturing the same
12/29/2005WO2005124820A1 Device for coating optical glass by means of plasma-supported chemical vapour deposition (cvd)
12/29/2005WO2005123979A2 Method and device for plasma-treating workpieces
12/29/2005WO2005123282A2 Methods for wet cleaning quartz surfaces of components for plasma processing chambers
12/29/2005WO2005038255B1 Evacuation apparatus
12/29/2005WO2005034196A3 Atomic layer deposition of hafnium-based high-k dielectric
12/29/2005US20050287826 Method of sealing low-k dielectrics and devices made thereby
12/29/2005US20050287819 Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides
12/29/2005US20050287818 Material and method for forming low-dielectric-constant film
12/29/2005US20050287807 Formation of composite tungsten films
12/29/2005US20050287806 Vertical CVD apparatus and CVD method using the same
12/29/2005US20050287804 Systems and methods of forming refractory metal nitride layers using organic amines
12/29/2005US20050287790 Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
12/29/2005US20050287775 Film formation apparatus and method for semiconductor process
12/29/2005US20050287771 Liquid precursors for the CVD deposition of amorphous carbon films
12/29/2005US20050287747 Doped nitride film, doped oxide film and other doped films
12/29/2005US20050287735 Semiconductor storage device and method of manufacturing the same
12/29/2005US20050287688 Water-barrier performance of an encapsulating film
12/29/2005US20050287686 Method to improve water-barrier performance by changing film surface morphology
12/29/2005US20050287298 Gas distributor for vapor coating method and container