Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
02/2006
02/23/2006US20060040510 Semiconductor device with silicon dioxide layers formed using atomic layer deposition
02/23/2006US20060040497 Material for contact etch layer to enhance device performance
02/23/2006US20060040475 Multi-chamber MOCVD growth apparatus for high performance/high throughput
02/23/2006US20060040461 Method of forming a capacitor
02/23/2006US20060040414 Methods of forming conductive materials
02/23/2006US20060040168 Nanostructured fuel cell electrode
02/23/2006US20060040104 Heat spreader
02/23/2006US20060040097 Cryogenic bearings
02/23/2006US20060040067 Discharge-enhanced atmospheric pressure chemical vapor deposition
02/23/2006US20060040066 Process of cleaning a semiconductor manufacturing system and method of manufacturing a semiconductor device
02/23/2006US20060040056 Methods of forming material on a substrate, and a method of forming a field effect transistor gate oxide on a substrate
02/23/2006US20060040055 Method and system for sequential processing in a two-compartment chamber
02/23/2006US20060040054 Passivating ALD reactor chamber internal surfaces to prevent residue buildup
02/23/2006US20060040053 Preparation of asymmetric membranes using hot-filament chemical vapor deposition
02/23/2006US20060040052 Methods for depositing tungsten layers employing atomic layer deposition techniques
02/23/2006US20060040044 Sonic cup gun
02/23/2006US20060037857 Workpiece holder for processing apparatus, and processing apparatus using the same
02/23/2006US20060037627 Process for treating solid surface and substrate surface
02/23/2006US20060037540 Delivery system
02/23/2006US20060037539 Vaporizer, various apparatuses including the same and method of vaporization
02/23/2006US20060037538 Holding device for a screen
02/23/2006US20060037537 Vacuum-processing chamber-shield and multi-chamber pumping method
02/23/2006US20060037536 Plasma resistant member, manufacturing method for the same and method of forming a thermal spray coat
02/23/2006US20060037533 High velocity thermal spray apparatus
02/23/2006DE112004000576T5 Herstellungsverfahren für Aluminiumoxidfilm hauptsächlich in α-Kristallstruktur und mehrlagiger Film draus Preparation process for alumina film mainly of it in α-crystal structure, and multi-layer film
02/23/2006DE102005038873A1 Vielkammer-MOCVD-Aufwachsvorrichtung für hohe Geschwindigkeit/ hohen Durchsatz Multi-chamber MOCVD growth apparatus for high speed / high throughput
02/23/2006DE102004002357A9 Verfahren zum Betreiben eines Infrarotstrahlerelements sowie Verwendung A method of operating an infrared radiating element as well as the use
02/23/2006CA2577151A1 Focusing nozzle
02/22/2006EP1627940A1 Method for producing single crystal of multi- element oxide single crystal containing bismuth as constituting element
02/22/2006EP1627934A2 Thin films and a method for producing the same
02/22/2006EP1627097A2 Deposition chamber surface enhancement and resulting deposition chambers
02/22/2006CN1739188A Atomic layer deposition methods
02/22/2006CN1738926A Film-forming apparatus component and method for cleaning same
02/22/2006CN1738923A Method and apparatus for treating a substrate
02/22/2006CN1738922A Film forming method and film forming device using plasma CVD
02/22/2006CN1738921A Component for film forming device and method of washing the component
02/22/2006CN1738826A Chemical vapor deposition precursors for deposition of tantalum-based materials
02/22/2006CN1738515A Surface metal pattern orientation deposition method based on ink-jet print
02/22/2006CN1738006A Method of forming a material film
02/22/2006CN1738001A Metallorganics chemical vapour deposition (CVD) preparing method for p-type ZnO thin film
02/22/2006CN1737999A Method for preparing high electron mobility hydrogenated nano-crystalline silicon thin films using crystal lattice strain
02/22/2006CN1737998A Doping and method for III-v aluminum contained compound composed by direct or indirect band-gap
02/22/2006CN1737997A Method for preparing high electron mobility hydrogenated nano-crystalline silicon thin films
02/22/2006CN1737991A High productivity plasma processing chamber
02/22/2006CN1737195A Metal inserting layer in hydride gas phase epitaxial growth gallium nitride film and process for preparing the same
02/22/2006CN1737194A Cavity device of energy wave reflection apparatus
02/22/2006CN1737193A Method of depositing noble metal electrode using oxidation-reduction reaction
02/22/2006CN1737192A Substrate holder for a vapour deposition system
02/22/2006CN1737191A Substrate holder for a vapour deposition system
02/22/2006CN1736947A Method for preparing carbon/carbon composite material
02/22/2006CN1243367C Batched atom layer depositing device
02/22/2006CN1243136C Deposition method of seed-crystal-free and bias-less diamond quasi-monocrystal film
02/21/2006US7003219 Substrate processing method
02/21/2006US7003215 providing accurate and reproducible flow of the chemical reagent vapor of a volatile liquid for use in the manufacture of semiconductor devices
02/21/2006US7002033 Chemical vapor deposition material and chemical vapor deposition
02/21/2006US7002032 Organic compound for CVD raw material and method of manufacturing metallic or metallic compound thin film using the organic compound
02/21/2006US7001850 Method of depositing dielectric films
02/21/2006US7001844 Material for contact etch layer to enhance device performance
02/21/2006US7001831 Method for depositing a film on a substrate using Cat-PACVD
02/21/2006US7001640 Apparatus and method for forming deposited film
02/21/2006US7001544 Method for manufacturing carbon-carbon composites
02/21/2006US7001482 Method and apparatus for improved focus ring
02/21/2006US7001468 Pressure energized pressure vessel opening and closing device and method of providing therefor
02/21/2006US7000636 Valve assemblies for use with a reactive precursor in semiconductor processing
02/21/2006US7000418 apparatus and method of cooling of substrates in the manufacture of magnetic memory disks for computers
02/16/2006WO2006017596A2 Heated gas box for pecvd applications
02/16/2006WO2006017340A2 Plasma enhanced chemical vapor deposition system for forming carbon nanotubes
02/16/2006WO2006017136A2 Plasma uniformity control by gas diffuser curvature
02/16/2006WO2006016888A1 Drapable diamond thin films and method for the preparation thereof
02/16/2006WO2006016677A1 Film forming apparatus and vaporizer
02/16/2006WO2006016496A1 Method and equipment for forming oxide film
02/16/2006WO2005098085A3 Multi-stage curing of low k nano-porous films
02/16/2006WO2005083154A3 Cleaning of chamber components
02/16/2006WO2005074450A3 Substrate holder having a fluid gap and method of fabricating the substrate holder
02/16/2006WO2005060634A3 Method and system for forming a film of material using plasmon assisted chemical reactions
02/16/2006WO2005048297A3 Nanostructures including a metal
02/16/2006WO2005034195A3 Growth of high-k dielectrics by atomic layer deposition
02/16/2006US20060035788 Superconductivity in boron-doped diamond thin film
02/16/2006US20060035471 Method of depositing a silicon dioxide comprising layer doped with at least one of P, B and Ge
02/16/2006US20060035470 Method for manufaturing semiconductor device and substrate processing system
02/16/2006US20060035390 Seed layer processes for MOCVD of ferroelectric thin films on high-k gate oxides
02/16/2006US20060035103 Method for the inner coating of a component with a cavity and component with an inner coating
02/16/2006US20060035067 Film multilayer body and flexible circuity board
02/16/2006US20060035035 Film forming method and film forming apparatus
02/16/2006US20060035025 Activated species generator for rapid cycle deposition processes
02/16/2006US20060035024 Processing of Sic/Sic ceramic matrix composites by use of colloidal carbon black
02/16/2006US20060035023 Method for making a strain-relieved tunable dielectric thin film
02/16/2006US20060035021 Vertical-offset coater and methods of use
02/16/2006US20060035011 Chilling the surface of a medical device (drug-coated stent) to below the freezing point of the coating solvent; applying the coating composition onto the surface while the surface is chilled; and allowing the coating to freeze on the surface
02/16/2006US20060034739 Method for the post-treatment of titanium dioxide pigments
02/16/2006US20060033678 Integrated electroless deposition system
02/16/2006US20060032848 Process and system for heating semiconductor substrates in a processing chamber containing a susceptor
02/16/2006US20060032586 Reducing electrostatic charge by roughening the susceptor
02/16/2006US20060032447 Processing chamber with wave reflector
02/16/2006US20060032446 Micro-wave tube with mechanical frequency tuning
02/16/2006US20060032445 Substrate processing apparatus and method, and gas nozzle for improving purge efficiency
02/16/2006US20060032444 Film forming apparatus and film forming method
02/16/2006US20060032443 Film formation method and apparatus for semiconductor process
02/16/2006US20060032442 Method and apparatus for forming silicon oxide film
02/16/2006US20060032441 Applying a topcoat onto the primer coating, prepared from an amine curing agent, toughening agents, fire retardant, a glass fiber thixotrope, a pigment, and an abrasive aggregate; non-skid surface for boat decks etc.