Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
06/2006
06/29/2006US20060141805 Method of depositing dielectric films
06/29/2006US20060141783 Sputtering apparatus and method for forming metal silicide layer using the same
06/29/2006US20060141290 Titania coatings by cvd at atmospheric pressure
06/29/2006US20060141271 Cutting tool insert comprising a cemented carbide or cubic boron nitride(CBN) substrate, having caotings comprising refractory layers composed of crystal structured aluminum oxide particles; improved wear resistance and toughness
06/29/2006US20060141268 Nanoparticle coated nanostructured surfaces for detection, catalysis and device applications
06/29/2006US20060141169 Method and apparatus for vacuum deposition
06/29/2006US20060141155 Copper metal films were deposited on heated substrates by the reaction of alternating doses of copper(I) N,N'-diisopropylacetamidinate vapor and hydrogen gas; uniform thickness and excellent step coverage
06/29/2006US20060141154 Method for treating the surface of a part made of a heat-structured composite material and use thereof in brazing parts made of a heat-structured composite material
06/29/2006US20060141153 Method for making carbon nanotubes
06/29/2006US20060141152 CVD apparatus and manufacturing method of semiconductor device using the same
06/29/2006US20060141142 Multilayered optical structures
06/29/2006US20060140596 Nanoparticle generator
06/29/2006US20060138603 Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
06/29/2006US20060138572 Semiconductor device and method for manufacturing the same
06/29/2006US20060138566 Doped nitride film, doped oxide film and other doped films
06/29/2006US20060138446 Algainn based optical device and fabrication method thereof
06/29/2006US20060138099 Method of forming a metal oxide film and microwave power source unit for use in the method
06/29/2006US20060137971 Method for coating cutting implements
06/29/2006US20060137822 Lateral temperature equalizing system for large area surfaces during processing
06/29/2006US20060137709 Film formation apparatus and method of using the same
06/29/2006US20060137614 Metal film and metal film-coated member, metal oxide film and metal oxide film-coated member, thin film forming apparatus and thin film forming method for producing metal film and metal oxide film
06/29/2006US20060137613 Plasma generating apparatus, plasma generating method and remote plasma processing apparatus
06/29/2006US20060137612 Methods and apparatus for downstream dissociation of gases
06/29/2006US20060137611 Plasma apparatus
06/29/2006US20060137610 Plasma processing apparatus with insulated gas inlet pore
06/29/2006US20060137609 Multi-single wafer processing apparatus
06/29/2006US20060137608 Atomic layer deposition apparatus
06/29/2006US20060137607 Combination of showerhead and temperature control means for controlling the temperature of the showerhead, and deposition apparatus having the same
06/29/2006US20060137606 High density plasma chemical vapor deposition apparatus for manufacturing semiconductor
06/29/2006DE102004060377A1 Verfahren und Vorrichtung zum Betrieb einer Plasmaeinrichtung Method and apparatus for operating a plasma device
06/29/2006DE10194628B4 Gassammler für einen Epitaxiereaktor Gas collector for an epitaxial reactor
06/29/2006DE10115492B4 Verfahren zur Aufbereitung einer Reaktionskammer Process for the preparation of a reaction chamber
06/28/2006EP1674890A2 Multilayer material and method of preparing same
06/28/2006EP1674592A2 Thin film processing system with different processing chambers
06/28/2006EP1674591A1 apparatus and method for cooling substrates
06/28/2006EP1673539A2 Evacuation apparatus
06/28/2006EP1673489A2 Production of agglomerates from gas phase
06/28/2006EP1599613B1 Method for coating a substrate
06/28/2006CN1795546A Method of forming fluorinated carbon film
06/28/2006CN1795290A Method and apparatus for generating a precursor for a semiconductor processing system
06/28/2006CN1795289A Chemical vapor deposition film formed by plasma cvd process and method for forming same
06/28/2006CN1795287A Thin film forming device and thin film forming method
06/28/2006CN1795284A Ultra low residual reflection, low stress lens coating
06/28/2006CN1795058A Cleaning a component of a process chamber
06/28/2006CN1794422A Opening/closing mechanism for vacuum processing apparatus and vacuum processing apparatus using the same
06/28/2006CN1794421A Semiconductor processing apparatus and method
06/28/2006CN1794021A Preparation method of silicon nanometer film on polymer used for nanometer photon technology
06/28/2006CN1794014A Multilayer material and method of preparing same
06/28/2006CN1793409A Al18B4O33 nano wire uniform cladded with BN and preparation process thereof
06/28/2006CN1792929A Vapor-deposition material for production of layer of high refractive index
06/28/2006CN1261995C Holding device for treated body
06/28/2006CN1261617C Technique for plating film of uncrystallized diamond
06/28/2006CN1261233C Method and apparatus for forming a coating
06/27/2006USRE39145 Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source
06/27/2006US7067917 Gradient barrier layer for copper back-end-of-line technology
06/27/2006US7067847 Semiconductor element
06/27/2006US7067439 ALD metal oxide deposition process using direct oxidation
06/27/2006US7067438 Atomic layer deposition method of forming an oxide comprising layer on a substrate
06/27/2006US7067436 Method of forming silicon oxide film and forming apparatus thereof
06/27/2006US7067420 Methods for forming a metal layer on a semiconductor
06/27/2006US7067407 Method of growing electrical conductors
06/27/2006US7067405 Atmospheric glow discharge with concurrent coating deposition
06/27/2006US7067204 heaters, decompressors and ultrasonic wave sources, which irradiate liquids for plasma enhanced chemical vapor deposition of films on substrates and for degradation toxins such as dioxins or polychlorinated biphenyl; pollution control
06/27/2006US7067178 flame spraying ceramics on substrate to form electrostatic chucks including electrodes, then sealing apertures on the surfaces with polymethyl methacrylate; supports for semiconductor wafers
06/27/2006US7067175 Soda inclusive glass substrate is coated with a highly tetrahedral amorphous carbon inclusive layer that is a form of diamond-like carbon (DLC). In certain embodiments, the amorphous carbon layer includes at least about 35% sp3
06/27/2006US7067104 Obtaining biologically- derived microtemplate having an original chemical composition and an original dimensional feature; subjecting to a chemical reaction, so as to partially or completely convert into shaped microcrocomponent
06/27/2006US7067034 Method and apparatus for plasma forming inner magnetic bucket to control a volume of a plasma
06/27/2006US7067012 CVD coating device
06/27/2006US7066997 Coal tar and hydrocarbon mixture pitch and the preparation and use thereof
06/27/2006US7066977 Flame synthesis and non-vacuum physical evaporation
06/27/2006US7066107 Shielding system for plasma chamber
06/22/2006WO2006065740A2 Self-cooling gas delivery apparatus under high vacuum for high density plasma applications
06/22/2006WO2006065571A2 Fuel cell conditioning layer
06/22/2006WO2006065532A2 Wafer heating and temperature control by backside fluid injection
06/22/2006WO2006065426A2 Pulsed mass flow delivery system and method
06/22/2006WO2006063855A2 Fine-laminar barrier protection layer
06/22/2006WO2006044198A3 Heat transfer system for improved semiconductor processing uniformity
06/22/2006WO2006038407A3 Vacuum film forming apparatus
06/22/2006WO2006036865A3 Deposition of ruthenium metal layers in a thermal chemical vapor deposition process
06/22/2006US20060135803 Substituted cyclopentadienyl tantalum compounds: bis(trimethylsilylcyclopentadienyl)tantalum hydride; heat resistance; for depositing tantalum, TaN, TaSiN to form diffusion barriers in connection with copper metallization of semiconductors
06/22/2006US20060134926 Method for increasing polysilicon grain size
06/22/2006US20060134924 Method of filling gaps and methods of depositing materials using high density plasma chemical vapor deposition
06/22/2006US20060134920 Exposing the metal surface to a passivation gas, and exposing the freshly etched metal structures to a second particle beam in the presence of the passivation gas; stabilizing metal structures on a substrate such as a semiconductor wafer or photomask; prevents overetching
06/22/2006US20060134919 Processing system and method for treating a substrate
06/22/2006US20060134897 Ethyleneoxide-silane and bridged silane precursors for forming low k films
06/22/2006US20060134496 Fuel cell conditioning layer
06/22/2006US20060134433 Multilayer material and method of preparing same
06/22/2006US20060134424 first layer of hydrogenated amorphous silicon carbide designed to be in contact with the mechanical part, a stack of layers and an external layer of hydrogenated amorphous carbon
06/22/2006US20060134345 Systems and methods for depositing material onto microfeature workpieces
06/22/2006US20060134331 Atomic layer deposition of copper using surface-activation agents
06/22/2006US20060134330 Cluster tool architecture for processing a substrate
06/22/2006US20060134329 Method of forming a porous metal catalyst on a substrate for nanotube growth
06/22/2006US20060134315 Methods of printing filter material to fabricate color filter
06/22/2006US20060132032 Diffusion barrier coatings having graded compositions and devices incorporating the same
06/22/2006US20060131881 Pre-expanded connector for expandable downhole tubulars
06/22/2006US20060131880 Pre-expanded connector for expandable downhole tubulars
06/22/2006US20060131879 Pre-expanded connector for expandable downhole tubulars
06/22/2006US20060131561 Organic thin-film transistor and method for manufacturing same
06/22/2006US20060130970 Method and apparatus to determine consumable part condition
06/22/2006US20060130873 Plasma cleaning of deposition chamber residues using duo-step wafer-less auto clean method