Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
11/2006
11/01/2006CN2834019Y High power pulse power supply
11/01/2006CN2832830Y Lasting gasoline-powered chain saws
11/01/2006CN1856870A Method of filling gaps and methods of depositing materials using high density plasma chemical vapor deposition
11/01/2006CN1856593A Apparatus for conveying gases to and from a chamber
11/01/2006CN1856592A Atomic layer deposition methods of forming silicon dioxide comprising layers
11/01/2006CN1855386A Growth of silicon-nitride film
11/01/2006CN1854715A Method for judging maintenance of times of semiconductor production apparatuses
11/01/2006CN1854336A Chemical gas-phase deposition reactor
11/01/2006CN1854335A Coated cutting tool insert
11/01/2006CN1854334A Manufacturing method for insulating film using double organic siloxane precursor
11/01/2006CN1854330A Continuous coating apparatus
11/01/2006CN1853832A Cutting tool coated with hard alloy
11/01/2006CN1282992C Purging method of semiconductor-manufacturing apparatus and manufacturing method of semiconductor device
11/01/2006CN1282880C Method for forming semi-transparent reflection mirror film and optical element with said film
11/01/2006CN1282764C Purifying method and chemical vapour-phase deposition deivce
11/01/2006CN1282692C Dielectric coated pole, plasma discharge processing apparatus and thin-film forming method
11/01/2006CN1282530C Cutting member with dual profile tip
10/2006
10/31/2006US7129551 Electronic component having a praseodymium oxide layer and process for fabricating same
10/31/2006US7129311 Additives to prevent degradation of alkyl-hydrogen siloxanes
10/31/2006US7129175 Method of manufacturing semiconductor device
10/31/2006US7128974 Thick single crystal diamond layer method for making it and gemstones produced from the layer
10/31/2006US7128889 Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries
10/31/2006US7128822 Leveler compounds
10/31/2006US7128805 Multiple elliptical ball plasma apparatus
10/31/2006US7128788 Manufacturing apparatus for buried insulating layer-type semiconductor silicon carbide substrate
10/31/2006US7128787 Atomic layer deposition method
10/31/2006US7128785 Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates
10/31/2006CA2277977C A coating comprising layers of diamond like carbon and diamond like nanocomposite compositions
10/26/2006WO2006113473A1 Method for electrodeposition of bronzes
10/26/2006WO2006112408A1 Method of forming self-organizing monomolecular film and utilization of the same
10/26/2006WO2006112392A1 Shower plate and method for manufacturing the same
10/26/2006WO2006112167A1 METHOD FOR MANUFACTURING p TYPE NITRIDE SEMICONDUCTOR AND SEMICONDUCTOR DEVICE MANUFACTURED BY SUCH METHOD
10/26/2006WO2006111618A1 Source, an arrangement for installing a source, and a method for installing and removing a source
10/26/2006WO2006111617A1 Reactor
10/26/2006WO2006087588A3 Apparatus and methods for growing nanofibres and nanotips
10/26/2006WO2006076130A3 METHODS FOR MAKING HIGH-TEMPERATURE COATINGS HAVING PT METAL MODIFIED Ϝ-Ni + Ϝ’-Ni3 AL ALLOY COMPOSITIONS AND A REACTIVE ELEMENT
10/26/2006WO2006068846A3 Dense coating formation by reactive deposition
10/26/2006WO2006021850A3 Cvd precursor solution used for production of a thin film comprising a lanthanide series metal and a thin film producing method using the same
10/26/2006WO2006007077A3 Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
10/26/2006WO2005103226A3 Plasma-enhanced functionalization of inorganic oxide surfaces
10/26/2006WO2005051842A3 Elongated nano-structures and related devices
10/26/2006US20060240974 Catalyst support substrate, method for growing carbon nanotubes using the same, and the transistor using carbon nanotubes
10/26/2006US20060240652 Very low dielectric constant plasma-enhanced cvd films
10/26/2006US20060240649 Method for depositing silicon
10/26/2006US20060240646 Method of removing residual contaminants from an environment
10/26/2006US20060240542 Substrate support lift mechanism
10/26/2006US20060240287 Dummy wafer and method for manufacturing thereof
10/26/2006US20060240271 A1 composite material being crumbled with water, a1 film and a1 power comprising the material and methods for preparation thereof, constitutional member for film-forming chamber method for recovering film-forming material
10/26/2006US20060240260 Cover, mobile communications apparatus and method for producing a coated cover
10/26/2006US20060240190 Compound of substituted dicyclopentane complexed with Ruthenium for chemical vapor deposition; high purity and high electric conductivity
10/26/2006US20060240189 Method for producing carbon nanotubes at low temperature
10/26/2006US20060240188 Chemical vapor deposition apparatus
10/26/2006US20060240187 Deposition of an intermediate catalytic layer on a barrier layer for copper metallization
10/26/2006US20060240178 Nozzle and method for use in coating a stent
10/26/2006US20060238286 Carrier device for magnetizable substrate
10/26/2006US20060237866 Method and apparatus for preparing nanoparticles
10/26/2006US20060237861 Bubbler for substrate processing
10/26/2006US20060237846 Doped nitride film, doped oxide film and other doped films and deposition rate improvement for rtcvd processes
10/26/2006US20060237764 LANTHANIDE DOPED TiOx DIELECTRIC FILMS
10/26/2006US20060237718 Porous solid of copper, silicon wafers, or silicon dioxide coated with a barrier layer with a complex of a substituted diimine or diamine propyl group
10/26/2006US20060237442 Power-supplying member and heating apparatus using the same
10/26/2006US20060237404 Laser annealer and laser thin-film forming apparatus
10/26/2006US20060237138 Apparatuses and methods for supporting microelectronic devices during plasma-based fabrication processes
10/26/2006US20060237137 Semiconductor apparatus capable of reducing outgassing pollution and method of achieving the same
10/26/2006US20060237054 Apparatus and method for washing quartz parts, particularly for process equipment used in semiconductor industries
10/26/2006US20060236942 Sealing lock for an in vacuo line for deposition on a flat product
10/26/2006US20060236941 Passive wafer support for particle free wafer acceleration
10/26/2006US20060236940 System and method for depositing a material on a substrate
10/26/2006US20060236939 System and method for depositing a material on a substrate
10/26/2006US20060236938 System and method for depositing a material on a substrate
10/26/2006US20060236937 System and method for depositing a material on a substrate
10/26/2006US20060236936 Deposition of carbon-containing layers using vitreous carbon source
10/26/2006US20060236935 Coating installation with coolable diaphragm
10/26/2006US20060236934 Plasma uniformity control by gas diffuser hole design
10/26/2006US20060236933 Roll-vortex plasma chemical vapor deposition system
10/26/2006US20060236932 Plasma processing apparatus
10/26/2006US20060236931 Tilted Plasma Doping
10/26/2006DE102005028643A1 Verfahren zur Bildung einer LP-CVD-Oxidschicht ohne Oxidieren einer darunter liegenden Metallschicht A method of forming a LP-CVD oxide layer without oxidizing a underlying metal layer
10/26/2006DE102005018162A1 Semiconductor treatment device for chemical vapor deposition, comprises reactor chamber with circular holder for a circular disk-shaped substrate formed on substrate holding zone adjacent to ring opening
10/26/2006DE10083318B4 Verfahren zum Erhalten von Monoisotopensilizium Si28 A method of obtaining monoisotopic silicon Si28
10/25/2006EP1715079A1 Deposition of titanium nitride film
10/25/2006EP1714315A2 Nitridation of high-k dielectric films
10/25/2006EP1713959A2 Method for obtaining carbon nanotubes on supports and composites comprising same
10/25/2006EP1713953A2 Method for producing silicon nitride films and silicon oxynitride films by chemical vapor deposition
10/25/2006EP1713952A2 A method and apparatus for forming a high quality low temperature silicon nitride layer
10/25/2006EP1713951A2 Control of carbon nanotube diameter using cvd or pecvd growth
10/25/2006EP1713950A2 Barrier layer process and arrangement
10/25/2006EP1713949A1 Method and apparatus for manufacturing a functional layer consisting of at least two components
10/25/2006EP1363745B1 Atomizer
10/25/2006EP1197581B1 Dlc film, dlc-coated plastic container, and method and apparatus for manufacturing dlc-coated plastic container
10/25/2006CN2830419Y Splitting metallic organic chemical gas-phase deposition reactor
10/25/2006CN1853003A Metallization of substrate(s) by a liquid/vapor deposition process
10/25/2006CN1853002A Precursor delivery system
10/25/2006CN1853001A Annealing single crystal chemical vapor depositon diamonds
10/25/2006CN1852772A Ultaviolet curing processes for advanced low-k materials
10/25/2006CN1851860A Bottom electrode assembly for semiconductor device
10/25/2006CN1851853A Device and method for reducing thin-film type capacitance vacuum gauge zero-point drift
10/25/2006CN1851045A Slender metal pipe inner wall diamond-film-like deposition method using DC glow discharge
10/25/2006CN1850350A Air-intaking device for increasing intake evenness
10/25/2006CN1850349A Air-intake nozzle