Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
11/2006
11/16/2006US20060258078 Atomic layer deposition of high-k metal oxides
11/16/2006US20060258062 Plasma cvd method
11/16/2006US20060258030 Mask holding structure, film forming method, electro-optic device manufacturing method, and electronic apparatus
11/16/2006US20060257690 Coated cutting tool insert
11/16/2006US20060257689 Tool and method for the chemical vapor deposition of a two-phase layer on a substrate member
11/16/2006US20060257669 Method of producing transparent titanium oxide coatings having a rutile structure
11/16/2006US20060257663 Wear resistant coatings to reduce ice adhesion on air foils
11/16/2006US20060257662 Process for the production of porous inorganic materials or a matrix material containing nanoparticles
11/16/2006US20060257585 Method of vapor-depositing strip-shaped substrates with a transparent barrier layer made of aluminum oxide
11/16/2006US20060257584 Atomic layer deposition method of depositing an oxide on a substrate
11/16/2006US20060257581 Spraying system for progressive spraying of non-rectangular objects
11/16/2006US20060257570 Deposition methods
11/16/2006US20060257569 Method for in-situ polycrystalline thin film growth
11/16/2006US20060257568 Vapor-phase growing unit
11/16/2006US20060257566 Isotope-doped carbon nanotube and method and apparatus for forming the same
11/16/2006US20060257565 Method of preparing catalyst layer for synthesis of carbon nanotubes and method of synthesizing carbon nanotubes using the same
11/16/2006US20060257564 Systems and methods for producing single-walled carbon nanotubes (SWNTs) on a substrate
11/16/2006US20060257563 Fabricating hafnium silicate layer on semiconductor substrate while also precisely controlling thicknesses of the thin films and also controlling the composition ratios of hafnium and silicon in the resultant hafnium silicate layer
11/16/2006US20060257562 wear and heat resistance; vapor deposition, lamination; for application to cutting tools
11/16/2006US20060257558 Plasma polymerization of atomically modified surfaces
11/16/2006US20060257553 Substrate conveyance device and substrate conveyance method, exposure apparatus and exposure method, device manufacturing method
11/16/2006US20060257295 Apparatus and method for generating a chemical precursor
11/16/2006US20060255470 ZrAlxOy DIELECTRIC LAYERS
11/16/2006US20060255466 Carbon containing silicon oxide film having high ashing tolerance and adhesion
11/16/2006US20060255293 Method for decreasing chemical diffusion in parylene and trapping at parylene-to-parylene interfaces
11/16/2006US20060255260 Method and apparatus for process monitoring and control
11/16/2006US20060254716 Processing system and method for chemically treating a tera layer
11/16/2006US20060254614 Deposition tool cleaning process having a moving plasma zone
11/16/2006US20060254521 Electron cyclotron resonance (ecr) plasma source having a linear plasma discharge opening
11/16/2006US20060254520 RF current drive for plasma electric generation system
11/16/2006US20060254519 Locally-efficient inductive plasma coupling for plasma processing system
11/16/2006US20060254518 Plasma source
11/16/2006US20060254517 Plasma booster for plasma treatment installation
11/16/2006US20060254516 Heating element CVD system and heating element CVD metod using the same
11/16/2006US20060254515 Deposition tool cleaning process having a moving plasma zone
11/16/2006US20060254514 Catalyst enhanced chemical vapor deposition apparatus
11/16/2006US20060254513 Catalyst enhanced chemical vapor deposition apparatus and deposition method using the same
11/16/2006US20060254512 Apparatus for attachment of semiconductor hardware
11/16/2006US20060254506 Methods of depositing an elemental silicon-comprising material over a substrate
11/16/2006US20060254461 Method and solution for forming anatase titanium dioxide, and titanium dioxide particles, colloidal dispersion and film
11/16/2006DE19608885B4 Verfahren und Vorrichtung zum Aufheizen von Trägerkörpern Method and apparatus for heating support bodies
11/16/2006DE112005000153T5 Erweiterte Multidruck-Werkstückprozessierung Advanced multi-pressure Werkstückprozessierung
11/16/2006DE112004002173T5 Verfahren zur Herstellung eines epitaktischen Verbindungshalbleitersubstrats A process for producing a compound semiconductor epitaxial substrate
11/15/2006EP1722405A1 Film-forming method
11/15/2006EP1722006A1 Method for the anticorrosion surface treatment of containers for fluids, container provided by means of the method, and apparatus for performing the method
11/15/2006EP1721026A1 Reactive metal sources and deposition method for thioaluminate phosphors
11/15/2006EP1721025A2 Vaporizing temperature sensitive materials for oled
11/15/2006EP1720702A2 Dual layer diffusion bonded chemical vapor coating for medical implants
11/15/2006EP1668682A4 Growth of high-k dielectrics by atomic layer deposition
11/15/2006EP1535320A4 Atomic layer deposition of high k metal silicates
11/15/2006EP1116261B1 Method and apparatus for cooling substrates
11/15/2006EP1068632B1 Contamination controlling method and plasma processing chamber
11/15/2006CN1864255A Electro-static chuck with non-sintered aln and a method of preparing the same
11/15/2006CN1864246A Method of vapor phase growth and vapor phase growth apparatus
11/15/2006CN1864245A Production method for silicon epitaxial wafer, and silicon epitaxial wafer
11/15/2006CN1864241A Apparatus to improve wafer temperature uniformity for face-up wet processing
11/15/2006CN1864235A Transparent base with transparent conductive film, method for producing same, and photoelectric converter comprising such base
11/15/2006CN1863939A Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces
11/15/2006CN1863938A Polysulfide thermal vapour source for thin sulfide film deposition
11/15/2006CN1863937A Metal thin film chip production method and metal thin film chip production device
11/15/2006CN1863427A Plasma processing device and method
11/15/2006CN1862770A Apparatus capable of eliminating slip line and high stress zone in silicon gas phase epitaxial layer
11/15/2006CN1862749A Electron emission source and its manufacturing method
11/15/2006CN1861841A Method for in-situ polycrystalline thin film growth
11/15/2006CN1861840A Catalyst enhanced chemical vapor deposition apparatus
11/15/2006CN1861839A Catalyst enhanced chemical vapor deposition apparatus and deposition method using the same
11/15/2006CN1861838A Chemical gaseous phase depositing process of avoiding reacting room particle pollution
11/15/2006CN1861837A CVD device for deposit spathic silicon
11/15/2006CN1861301A Surface-coated carbide alloy cutting tool
11/15/2006CN1284880C Diamond coatings on reactor wall and method of manufacturing thereof
11/14/2006US7135426 Erosion resistant process chamber components
11/14/2006US7135423 Methods for forming low resistivity, ultrashallow junctions with low damage
11/14/2006US7135422 Methods of forming a multi-layered structure using an atomic layer deposition process and methods of forming a capacitor of an integrated circuit device
11/14/2006US7135421 Atomic layer-deposited hafnium aluminum oxide
11/14/2006US7135391 Polycrystalline SiGe junctions for advanced devices
11/14/2006US7135369 Atomic layer deposited ZrAlxOy dielectric layers including Zr4AlO9
11/14/2006US7135347 Method for manufacturing nitride film including high-resistivity GaN layer and epitaxial substrate manufactured by the method
11/14/2006US7135221 Cemented carbide of tungsten carbide, cobalt and carbides of metals from the groups IVb, Vb and VIb with a binder phase that is highly alloyed with cobalt; and a coating including alumina
11/14/2006US7135207 Introducing reactant containing a metal-organic compound into reaction chamber including a substrate; introducing reactant containing alcohol; generating metal oxide by a chemical reaction between reactants which is deposited as thin film
11/14/2006US7135089 For generating uniform, low-electron-temperature plasma under a low pressure; comprises a gas supply device, an exhaust device, a high-frequency power source, an electrode, a dielectric, a multiple-vortex-type conductor and a second conductor
11/14/2006US7135073 Method and system for semiconductor crystal production with temperature management
11/14/2006US7134868 Injection molding nozzle with wear-resistant tip having diamond-type coating
11/09/2006WO2006118851A2 Method of making scratch resistant coated glass article including layer(s) resistant to fluoride-based etchant(s)
11/09/2006WO2006118774A2 Silicon shelf towers
11/09/2006WO2006118735A2 Method of making diamond-like carbon hydrophilic using barrier discharge pyrolysis
11/09/2006WO2006118511A1 Method op manufacturing articles having sharp edges and devices made by said method
11/09/2006WO2006118161A1 Substrate treating apparatus and electrode
11/09/2006WO2006118042A1 Surface wave excitation plasma generator and surface wave excitation plasma processing system
11/09/2006WO2006116889A1 Plasma amplifier for plasma treatment plant
11/09/2006WO2006057706A3 Method for deposition of metal layers from metal carbonyl precursors
11/09/2006WO2005098930A3 Process for producing semi-conductor coated substrate
11/09/2006WO2005098083A3 Miniature microwave plasma torch application and method of use thereof
11/09/2006WO2005036593A3 Deposition of silicon-containing films from hexachlorodisilane
11/09/2006WO2004066276A3 Method and system for replicating film data to a metal substrate and article of manufacture
11/09/2006US20060252904 2,6-di-tert-butyl-4-methyl phenol a free radical scavenger
11/09/2006US20060252279 Systems and methods for forming metal oxides using metal diketonates and/or ketoimines
11/09/2006US20060252275 Gas delivery device method for improved deposition of dielectric material
11/09/2006US20060252255 Focused ion beam deposition
11/09/2006US20060252244 Systems and methods for forming metal oxide layers
11/09/2006US20060252240 Process for forming a dielectric on a copper-containing metallization and capacitor arrangement