Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
02/2007
02/14/2007EP1751329A1 Method of growing sic single crystal and sic single crystal grown by same
02/14/2007EP1751325A2 Controlled vapor deposition of multilayered coatings adhered by an oxide layer
02/14/2007EP1751323A1 Aircraft wheel part having improved corrosion resistance
02/14/2007EP1750859A2 Patterning carbon nanotube coatings by selective chemical modification
02/14/2007EP1750833A1 Method and apparatus to help promote contact of gas with vaporized material
02/14/2007EP1235262B1 Heat treatment device
02/14/2007EP0914496A4 Microwave applicator for an electron cyclotron resonance plasma source
02/14/2007CN2869035Y Polymeric membrane medicinal bottle plug coating equipment
02/14/2007CN1914736A 半导体装置 Semiconductor device
02/14/2007CN1914717A Stress-tuned, single-layer silicon nitride film and deposition method thereof
02/14/2007CN1914352A Cleaning of chamber components
02/14/2007CN1914150A Alkoxide compound, raw material for thin film formation and process for producing thin film
02/14/2007CN1914131A Method for cleaning a substrate
02/14/2007CN1913203A Thin film lithium battery using diselenid nickel thin film as cathode material and its preparation method
02/14/2007CN1913129A Method for repairing thin film transistor line on display panel
02/14/2007CN1913099A Chamber for vacuum processing device and device having the chamber
02/14/2007CN1913098A Loading umloading device of semiconductor processing piece and its loading and unloading method
02/14/2007CN1912179A Apparatus and method for forming a film, patterning method and method for manufacturing an optical device
02/14/2007CN1912178A Chemical vapor deposition chamber with dual frequency bias and method for manufacturing a photomask using the same
02/14/2007CN1912172A Method for controlling large or small of grain of multielement oxide film
02/14/2007CN1911937A Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane
02/14/2007CN1911534A Method of reworking surface coating layer
02/14/2007CN1300374C Cerium oxide containing ceramic components and coatings in semiconductor processing equipment
02/14/2007CN1300358C Metal dusting corrosion resistant alloys
02/14/2007CN1300149C Dicopper(I)oxalate complexes for use as precursor substancesin metallic copper deposition
02/13/2007US7177086 Optical component thickness adjustment method, optical component, and position adjustment method for optical component
02/13/2007US7176469 Negative ion source with external RF antenna
02/13/2007US7176420 Resistive heaters and uses thereof
02/13/2007US7176403 Method and apparatus for the compensation of edge ring wear in a plasma processing chamber
02/13/2007US7176132 Manufacturing method of semiconductor device
02/13/2007US7176111 Method for depositing polycrystalline SiGe suitable for micromachining and devices obtained thereof
02/13/2007US7176054 Method of forming a p-type group II-VI semiconductor crystal layer on a substrate
02/13/2007US7175880 Surface treatment system and method
02/13/2007US7175875 Method and apparatus for plasma processing
02/13/2007US7175735 Method and apparatus for manufacturing coated conductor
02/13/2007US7175714 Electrode-built-in susceptor and a manufacturing method therefor
02/13/2007US7175713 Apparatus for cyclical deposition of thin films
02/13/2007CA2186563C Antenna glazing multicontact
02/08/2007WO2007016701A2 Deposition apparatus for semiconductor processing
02/08/2007WO2007016688A1 A method and a device for depositing a film of material or otherwise processing or inspecting, a substrate as it passes through a vacuum environment guided by a plurality of opposing and balanced air bearing lands and sealed by differentially pumped groves and sealing lands in a non-contact manner
02/08/2007WO2007016631A1 Method of using nf3 for removing surface deposits
02/08/2007WO2007016592A2 Gas manifold valve cluster
02/08/2007WO2007016453A2 Systems and methods for capture substrates
02/08/2007WO2007016315A2 Extended release venlafaxine compositions
02/08/2007WO2007016218A2 Integrated electroless deposition system
02/08/2007WO2007016013A2 Unique passivation technique for a cvd blocker plate to prevent particle formation
02/08/2007WO2007015967A2 Method and apparatus for monitoring a pattern of an applied liquid
02/08/2007WO2007015897A2 Deposition of multilayer structures including layers of germanium and/or germanium alloys
02/08/2007WO2007015504A1 Plasma processing apparatus and gas permeable plate
02/08/2007WO2007015445A1 Plasma generator and film forming method employing same
02/08/2007WO2007015436A1 Metal-containing compound, process for producing the same, metal-containing thin film, and method of forming the same
02/08/2007WO2007015433A1 Method for forming insulating film and insulating film
02/08/2007WO2007015385A1 Atmospheric pressure plasma processing system
02/08/2007WO2006121561A3 High performance alloys with improved metal dusting corrosion resistance
02/08/2007WO2006075998A3 Means and method for a liquid metal evaporation source with integral level sensor and external reservoir
02/08/2007WO2006071671A3 System for and method of forming via holes by multiple deposition events in a continuous inline shadow mask deposition process
02/08/2007WO2006042109A3 An apparatus for and method of sampling and collecting powders flowing in a gas stream
02/08/2007WO2005081789A3 Formation of CIGS Absorber Layer by Atomic Layer Deposition
02/08/2007US20070032676 Process for depositing low dielectric constant materials
02/08/2007US20070032675 Forming a dielectric layer using a hydrocarbon-containing precursor
02/08/2007US20070032049 Process for manufacturing a semiconductor device
02/08/2007US20070032048 Method for depositing thin film by controlling effective distance between showerhead and susceptor
02/08/2007US20070032047 Thin dielectrical films containing silicon on a wafer target substrate by chemical vapor deposition; selectively supplying a purge gas, a first process gas of a silane, and a second process gas selected from a nitriding gas, an oxynitriding gas, and an oxidizing gas alternately
02/08/2007US20070032045 Method for manufacturing semiconductor device and substrate processing apparatus
02/08/2007US20070031991 Method for depositing compounds on a substrate by means of metalorganic chemical vapor deposition
02/08/2007US20070031981 Method for forming ferroelectric film and semiconductor device
02/08/2007US20070031694 Conductive substrate; a coating layer of niobium and tantalum and an alloy, a conductive diamond layer on a surface of the coating layer; stable, excellent in economical efficiency and specific strength, and lightweight
02/08/2007US20070031609 Chemical vapor deposition chamber with dual frequency bias and method for manufacturing a photomask using the same
02/08/2007US20070031600 Method and a device for depositing a film of material or otherwise processing or inspecting, a substrate as it passes through a vacuum environment guided by a plurality of opposing and balanced air bearing lands and sealed by differentially pumped groves and sealing lands in a non-contact manner
02/08/2007US20070031599 Use of dissolved hafnium alkoxides or zirconium alkoxides as precursors for hafnium oxide and hafnium oxynitride layers or zirconium oxide and zirconium oxynitride layers
02/08/2007US20070031598 Method for depositing silicon-containing films
02/08/2007US20070031597 Organometallic precursors and methods of forming thin films including the use of the same
02/08/2007US20070031596 Method for reducing particle contamination in a low pressure CVD apparatus
02/08/2007US20070031320 forming a catalyst layer on Si substrate heating the substrate to a predetermined temperature; intermittently introducing/providing and then interrupting a reaction gas ethylene, proximate the substrate to grow a patterned carbon nanotube array, each carbon nanotube having at least one line mark
02/08/2007US20070029046 Methods and systems for increasing substrate temperature in plasma reactors
02/08/2007US20070028842 Vacuum chamber bottom
02/08/2007US20070028841 Method and apparatus for depositing material on a substrate
02/08/2007US20070028840 Plasma processing apparatus
02/08/2007US20070028839 Method and apparatus for an improved deposition shield in a plasma processing system
02/08/2007US20070028838 Gas manifold valve cluster
02/08/2007US20070028837 An apparatus for plasma treatment
02/08/2007US20070028803 Opaque coatings
02/08/2007DE4412902B4 Verfahren zur plasmaunterstützten, chemischen Dampfabscheidung und Vakuumplasmakammer A method for plasma-enhanced, chemical vapor deposition and vacuum plasma chamber
02/08/2007DE10203833B4 Verfahren und Vorrichtung zur Differenzdruckregelung an Epitaxiereaktoren Method and apparatus for differential pressure control at epitaxy reactors
02/08/2007DE102006036084A1 Elektrode für die Elektrolyse und Verfahren zu ihrer Herstellung Electrode for electrolysis and a process for their preparation
02/08/2007DE102006035854A1 Elektrode aus leitfähigem Diamant und Verfahren zu deren Herstellung Plate of conductive diamond, and processes for their preparation
02/08/2007DE10136682B4 Selektives Epitaxieverfahren für Halbleiterbauelemente Selective epitaxy for semiconductor devices
02/07/2007EP1749901A2 Chemical vapor deposition chamber with dual frequency bias and method for manufacturing a photomask using the same
02/07/2007EP1749900A1 Susceptor for vapor deposition apparatus
02/07/2007EP1749899A1 Method and apparatus for the application of twin wire arc spray coatings
02/07/2007EP1749898A2 Article having patterned decorative coating
02/07/2007EP1749570A1 Method for oxidizing substance and oxidation apparatus therefor
02/07/2007EP1749117A2 Yield improvement in silicon-germanium epitaxial growth
02/07/2007EP1749116A1 Methods and apparatuses for transferring articles through a load lock chamber under vacuum
02/07/2007EP1749115A2 Apparatus for directing plasma flow to coat internal passageways
02/07/2007EP1273027B1 Reaction chamber with at least one hf feedthrough
02/07/2007EP1230666B1 Plasma processing systems and method therefor
02/07/2007EP1090429B1 Multilayer semiconductor structure with phosphide-passivated germanium substrate
02/07/2007CN1910739A Treatment device
02/07/2007CN1910308A Advanced multi-pressure workpiece processing