Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
03/2007
03/06/2007US7185602 Ion implantation ion source, system and method
03/01/2007WO2007024493A1 Nitrogen profile engineering in high-k nitridation of a gate dielectric layer
03/01/2007WO2007024094A1 Method of manufacturing vanadium oxide thin film
03/01/2007WO2007023985A1 Piezoelectric device, liquid ejecting head using same, and liquid ejector
03/01/2007WO2007023951A1 Substrate processing apparatus and substrate processing method
03/01/2007WO2007023911A1 Process for producing semiconductor substrate
03/01/2007WO2007023722A1 METHOD FOR PRODUCTION OF GaxIn1-xN (0≤x≤1) CRYSTAL, GaxIn1-xN (0≤x≤1) CRYSTAL SUBSTRATE, METHOD FOR PRODUCTION OF GaN CRYSTAL, GaN CRYSTAL SUBSTRATE AND PRODUCT
03/01/2007WO2007023639A1 Substrate treating apparatus, and for the substrate treating apparatus, method of substrate delivery, program and program storing recording medium
03/01/2007WO2007023559A1 Film forming process, mask for film formation, and film forming unit
03/01/2007WO2007023535A1 Method of film formation, mask for film formation and film formation apparatus
03/01/2007WO2007023239A1 Organometallic precursors for depositing a tantalum carbonitride or carbide film and method of depositing one such film
03/01/2007WO2007022976A2 Method and device for the plasma treatment of the interior of hollow bodies
03/01/2007WO2007008438A3 Sensor for pulsed deposition monitoring and control
03/01/2007WO2007008438A2 Sensor for pulsed deposition monitoring and control
03/01/2007WO2006096659A3 Method and system for coating sections of internal surfaces
03/01/2007WO2006031452A3 Apparatus for the optimization of atmospheric plasma in a plasma processing system
03/01/2007WO2006023637A3 In situ surface contaminant removal for ion implanting
03/01/2007US20070049034 High aspect ratio gap fill application using high density plasma chemical vapor deposition
03/01/2007US20070048977 Method of depositing Ge-Sb-Te thin film
03/01/2007US20070048536 Tool with wear resistant coating
03/01/2007US20070048456 Plasma enhanced chemical vapor deposition apparatus and method
03/01/2007US20070048455 Thin film forming method
03/01/2007US20070048453 Systems and methods for plasma doping microfeature workpieces
03/01/2007US20070048451 Substrate movement and process chamber scheduling
03/01/2007US20070048447 System and method for forming patterned copper lines through electroless copper plating
03/01/2007US20070048446 Gas delivery system for semiconductor processing
03/01/2007US20070048438 Thermochromic coatings
03/01/2007US20070048434 System and method for distributing multiple materials from an agricultural vehicle
03/01/2007US20070047889 GeBPSG top clad for a planar lightwave circuit
03/01/2007US20070044916 Vacuum processing system
03/01/2007US20070044915 Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same
03/01/2007US20070044720 Gate valve and substrate-treating apparatus including the same
03/01/2007US20070044719 Processing chamber configured for uniform gas flow
03/01/2007US20070044718 Wafer Holder and Semiconductor Manufacturing Apparatus
03/01/2007US20070044717 Segmented resonant antenna for radio frequency inductively coupled plasmas
03/01/2007US20070044716 Plasma processing apparatus
03/01/2007US20070044715 Supplying rf power to a plasma process
03/01/2007US20070044704 Colored coating and formulation
03/01/2007DE20023858U1 Unabhängig von Aktivierungsbehandlungen zur Wasserstoffsorption befähigte Verbundmaterialien Regardless of activation treatments for hydrogen sorption capable of composite materials
03/01/2007DE10328842B4 Suszeptor für eine chemische Gasphasenabscheidung, Verfahren zur Bearbeitung einer Halbleiterscheibe durch chemische Gasphasenabscheidung und nach dem Verfahren bearbeitete Halbleiterscheibe Susceptor for a chemical vapor deposition method for processing a semiconductor wafer by chemical vapor deposition and by the process machined wafer
03/01/2007DE102006038885A1 Plasma deposition of germanium-antimony-tellurium thin layer, especially for use in phase-change random access memories, by supplying three precursors and reaction gas into chamber containing fixed wafer substrate
03/01/2007DE102005040266A1 Verfahren und Vorrichtung zur innenseitigen Plasmabehandlung von Hohlkörpern Method and apparatus for inside plasma treatment of hollow bodies
03/01/2007DE102005040087A1 Depositing method for depositing absorber layers for thin-layer solar cells covers layer-forming elements in a vapor phase while depositing them on a substrate
02/2007
02/28/2007EP1757713A1 Lens-coating gas dispenser and corresponding coating device, lens and method
02/28/2007EP1757612A2 Tantal and Vanadium compounds and their use in Chemical Vapour deposition (CVD)
02/28/2007EP1757389A1 Surface-coated cutting tool
02/28/2007EP1756854A1 Gallium nitride-based semiconductor stacked structure, production method thereof, and compound semiconductor and light-emitting device each using the stacked structure
02/28/2007EP1756329A1 Plasma enhanced chemical vapor deposition of metal oxide
02/28/2007EP1756328A2 System and method for forming multi-component dielectric films
02/28/2007EP1559133B1 Forced convection assisted rapid thermal furnace
02/28/2007EP1501962B1 A method for modifying a metallic surface
02/28/2007EP1159465B1 Method of atomic layer deposition
02/28/2007EP1040292B1 Gas panel
02/28/2007CN1922927A Vaporizing temperature sensitive materials for OLED
02/28/2007CN1921069A Laser processing apparatus utilizing laser beam to irradiate semiconductor layer
02/28/2007CN1921068A Particle sticking prevention apparatus and plasma processing apparatus
02/28/2007CN1920262A Variable-throat exhaust turbocharger and method for manufacturing constituent members of variable throat mechanism
02/28/2007CN1920093A Boron phosphor silicon oxide technology
02/28/2007CN1920092A Method of depositing Ge-Sb-Te thin film
02/28/2007CN1302512C Electrode member for plasma treating appts., plasma treating appts. and plasma treating method
02/28/2007CN1302488C Resistance material, resistance produced by the same, method for producing resistance and solution for resistance material aggradation
02/28/2007CN1302487C Oxide superconductor and its manufacturing method
02/28/2007CN1302152C Chemical vapor depositing apparatus
02/28/2007CN1302151C Method and device for producing ferroelectric apparatus
02/28/2007CN1302150C Method for forming metal film
02/28/2007CN1301900C Method for the selective production of ordered carbon nanotubes in a fluidised bed
02/27/2007US7184657 Enhanced rapid thermal processing apparatus and method
02/27/2007US7183604 High dielectric constant device
02/27/2007US7183576 Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD
02/27/2007US7183229 Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device
02/27/2007US7183208 Methods for treating pluralities of discrete semiconductor substrates
02/27/2007US7183207 Chemical vapor deposition metallization processes and chemical vapor deposition apparatus used therein
02/27/2007US7183197 Water-barrier performance of an encapsulating film
02/27/2007US7183170 Manufacturing method of semiconductor device
02/27/2007US7182980 Annular substrates are stacked in an enclosure; gas containing at least one precursor of a matrix material to be deposited within the pores of the substrates is channeled inside the enclosure; residual gas is extracted
02/27/2007US7182979 High efficiency method for performing a chemical vapordeposition utilizing a nonvolatile precursor
02/27/2007US7182879 Plasma processing method
02/27/2007US7182842 Device for amplifying the current of an abnormal electrical discharge and system for using an abnormal electrical discharge comprising one such device
02/27/2007US7182819 Methods for cleaning a chamber of semiconductor device manufacturing equipment
02/27/2007US7182817 Apparatus and method for developing latent fingerprints
02/27/2007US7182816 Particulate reduction using temperature-controlled chamber shield
02/27/2007US7182122 Heating and cooling apparatus, and vacuum processing apparatus equipped with this apparatus
02/22/2007WO2007022144A1 Optical emission interferometry for pecvd using a gas injection hole
02/22/2007WO2007021692A2 Method and apparatus to control semiconductor film deposition characteristics
02/22/2007WO2007021520A2 Substrate support for increasing substrate temperature in plasma reactors
02/22/2007WO2007020874A1 Thin film forming method and semiconductor device manufacturing method
02/22/2007WO2007020872A1 Placing table structure, method for manufacturing placing table structure and heat treatment apparatus
02/22/2007WO2007020810A1 Plasma processing apparatus
02/22/2007WO2007002674A3 Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same
02/22/2007WO2007002672A3 Atomic layer deposition using alkaline earth metal beta-diketiminate precursors
02/22/2007WO2006071816A3 Window protector for sputter etching of metal layers
02/22/2007WO2006036215A3 Superconductor fabrication processes
02/22/2007WO2005116291B1 Apparatus for directing plasma flow to coat internal passageways
02/22/2007US20070042610 Method of depositing low k barrier layers
02/22/2007US20070042581 Manufacturing method of semiconductor device and substrate processing apparatus
02/22/2007US20070042508 Pulsed mass flow delivery system and method
02/22/2007US20070042224 Process for producing thin hafnium or zirconium nitride coatings
02/22/2007US20070042223 Light element complex hydride film and method for synthesis thereof
02/22/2007US20070042187 Heat treatable coated article with diamond-like carbon (DLC) and/or zirconium in coating
02/22/2007US20070042186 hydrogenated DLC acts as fuel upon combustion with oxygen produces carbon dioxide and/or water; combustion heats the zirconium nitride to a temperature(s) well above the heat treating temperature, causing zirconium nitride to be transformed into a layer of zirconium oxide; scratch resistant and durable