| Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892) |
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| 04/19/2007 | WO2006065532A3 Wafer heating and temperature control by backside fluid injection |
| 04/19/2007 | WO2006023894A9 Semiconductor processing components and semiconductor processing utilizing same |
| 04/19/2007 | WO2005047369A3 Fine particle hard molded bodies for abrasion-resistant polymer matrices |
| 04/19/2007 | US20070087579 Semiconductor device manufacturing method |
| 04/19/2007 | US20070087577 Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus |
| 04/19/2007 | US20070087576 Substrate susceptor for receiving semiconductor substrates to be deposited upon |
| 04/19/2007 | US20070087539 Method for manufacturing compound semiconductor epitaxial substrate |
| 04/19/2007 | US20070087492 Method for forming semiconductor film, method for manufacturing semiconductor device and electrooptic device, apparatus for performing the same, and semiconductor device and electrooptic device |
| 04/19/2007 | US20070087455 Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor |
| 04/19/2007 | US20070087230 Method and apparatus for integrated-circuit battery devices |
| 04/19/2007 | US20070087185 Erosion Resistant Coatings |
| 04/19/2007 | US20070087130 Deposition device |
| 04/19/2007 | US20070087121 Apparatus and method for synthesizing chiral carbon nanotubes |
| 04/19/2007 | US20070087115 Method for applying a paste-like mass |
| 04/19/2007 | US20070086881 Dual substrate loadlock process equipment |
| 04/19/2007 | US20070085483 Plasma confinement apparatus, and method for confining a plasma |
| 04/19/2007 | US20070085226 Liquid substance supply device for vaporizing system, vaporizer, vaporization performance appraisal method |
| 04/19/2007 | US20070085170 Single crystalline a-plane nitride semiconductor wafer having orientation flat |
| 04/19/2007 | US20070084715 Method for the production of a substrate |
| 04/19/2007 | US20070084409 Linear type deposition source |
| 04/19/2007 | US20070084408 Batch processing chamber with diffuser plate and injector assembly |
| 04/19/2007 | US20070084407 Apparatus and method for manufacturing carbon nanotubes |
| 04/19/2007 | US20070084406 Reaction chamber with opposing pockets for gas injection and exhaust |
| 04/19/2007 | US20070084405 Adaptive plasma source for generating uniform plasma |
| 04/19/2007 | US20070084404 Reactor surface passivation through chemical deactivation |
| 04/19/2007 | US20070084401 Device for carrying out a surface treatment of substrates under vacuum |
| 04/19/2007 | US20070084079 Multi-zone shower head for drying single semiconductor substrate |
| 04/19/2007 | DE10245537B4 Verfahren und Prozessreaktor zur sequentiellen Gasphasenabscheidung mittels einer Prozess- und einer Hilfskammer Method and process for sequential vapor deposition reactor by means of a process and an auxiliary chamber |
| 04/19/2007 | DE102006048609A1 Electron discharge window manufacturing method, involves applying vapor depositing layer by vapor depositing process on substrate, and removing substrate with upper surface that is made up of flexible polymer material |
| 04/19/2007 | DE102005049393A1 Verfahren zur Herstellung eines beschichteten Substratkörpers, Substratkörper mit einer Beschichtung und Verwendung des beschichteten Substratkörpers A process for preparing a coated substrate body, the substrate body having a coating, and use of the coated substrate body |
| 04/19/2007 | DE102005049266A1 Vorrichtung und Verfahren zur Plasmabehandlung von Objekten Apparatus and method for plasma treatment of objects |
| 04/18/2007 | EP1775262A1 Hydrogen-containing carbon film |
| 04/18/2007 | EP1774571A2 In-line heater for use in semiconductor wet chemical processing and method of manufacturing the same |
| 04/18/2007 | EP1774562A1 System for low-energy plasma-enhanced chemical vapor deposition |
| 04/18/2007 | EP1774538A2 Multiple gas injection system for charged particle beam instruments |
| 04/18/2007 | EP1774057A1 Device and method for high-throughput chemical vapor deposition |
| 04/18/2007 | EP1774056A1 Method for the deposition of layers containing silicon and germanium |
| 04/18/2007 | EP1774055A2 Ion implanter operating in pulsed plasma mode |
| 04/18/2007 | EP1774054A1 Variable quadruple electromagnet array, particularly used in a multi-step process for forming a metal barrier in a sputter reactor |
| 04/18/2007 | EP1773734A1 Boron-containing layer system comprising a boron carbide layer, a b-c-n layer, and a carbon-modified hexahedral boron nitride layer, and method for the production of such a layer system |
| 04/18/2007 | EP1430516B1 Tool for handling wafers and epitaxial growth station |
| 04/18/2007 | EP1417701B1 Methods of forming capacitor electrodes and capacitor constructions |
| 04/18/2007 | EP1316108B1 Fabrication process of a semiconductor device comprising an intermediate low-dielectric silicon nitride film |
| 04/18/2007 | EP1171644B1 Method and apparatus for controlling polymerized teos build-up in vacuum pump lines |
| 04/18/2007 | EP1097468B1 Method and apparatus for processing wafers |
| 04/18/2007 | CN1950932A An improved method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made |
| 04/18/2007 | CN1950931A Gas supply integration unit |
| 04/18/2007 | CN1950921A Method for the production of a disk-shaped workpiece based on a dielectric substrate, and vacuum processing system therefor |
| 04/18/2007 | CN1950548A Method of growing SiC single crystal and SiC single crystal grown by same |
| 04/18/2007 | CN1950542A Yield improvement in silicon-germanium epitaxial growth |
| 04/18/2007 | CN1950538A Variable quadruple electromagnet array, particularly used in a multi-step process for forming a metal barrier in a sputter reactor |
| 04/18/2007 | CN1949564A Ferrous selenide cathode material for lithium cell and preparing process thereof |
| 04/18/2007 | CN1949458A Reaction chamber with opposing pockets for gas injection and exhaust |
| 04/18/2007 | CN1948551A Method of dielectric barrier discharge plasma hot wire chemical gaseous phase deposition and its device |
| 04/18/2007 | CN1948550A Plasma treatment device |
| 04/18/2007 | CN1311533C Method and apparatus for manufacturing semiconductor device |
| 04/18/2007 | CN1311531C Microwave plasma process device |
| 04/18/2007 | CN1311107C Substrate holder |
| 04/18/2007 | CN1311097C Method for preparing low dielectric films, raw material mixture and the film |
| 04/17/2007 | US7205422 Volatile metal β-ketoiminate and metal β-diiminate complexes |
| 04/17/2007 | US7205249 Reacting an oxygen containing compound such as nitrous oxide with 1,3,5-trisilacyclohexane, preferably in a helium carrier gas and at 40 degrees C. |
| 04/17/2007 | US7205248 Method of eliminating residual carbon from flowable oxide fill |
| 04/17/2007 | US7205247 Using ozone and a hafnium precursor that is tetrakis(dimethylamino)hafnium (TDMAHf), tetrakis(diethylamino)hafnium (TDEAHf), tetrakis(1-methoxy-2-methylpropoxy)hafnium (Hf(MMP)4, or tetrakis(ethylmethylamino)hafnium (TEMAHf). |
| 04/17/2007 | US7205246 Forming low k dielectric layers |
| 04/17/2007 | US7205240 HDP-CVD multistep gapfill process |
| 04/17/2007 | US7205224 Very low dielectric constant plasma-enhanced CVD films |
| 04/17/2007 | US7205205 Ramp temperature techniques for improved mean wafer before clean |
| 04/17/2007 | US7205056 First crystal layer having a Bi-based perovskite structure is intermittently formed in a surface direction of the ceramic film, and second crystal layer having a lower melting point composed of ABO-type oxides in which Bi is in an A-site and Si or Ge is in a B-site is between the first crystals |
| 04/17/2007 | US7205055 Metallic carbide containing layer which is formed such that a metal is diffused to a surface of the parent material and metal carbide is formed thereon and having cracks, a vitreous member composed of a vitreous material filled in the cracks and a vitreous material layer formed |
| 04/17/2007 | US7205034 Method and device for generating uniform high-frequency plasma over large surface area used for plasma chemical vapor deposition apparatus |
| 04/17/2007 | US7205033 Method for forming polycrystalline silicon film of polycrystalline silicon TFT |
| 04/17/2007 | US7204971 Shaped microcomponents via reactive conversion of biologically-derived microtemplates |
| 04/17/2007 | US7204950 Dispensing package |
| 04/17/2007 | US7204921 Vacuum apparatus and vacuum processing method |
| 04/17/2007 | US7204915 Patterned medium, method for fabricating same and method for evaluating same |
| 04/17/2007 | US7204913 In-situ pre-coating of plasma etch chamber for improved productivity and chamber condition control |
| 04/17/2007 | US7204912 Method and apparatus for an improved bellows shield in a plasma processing system |
| 04/17/2007 | US7204911 Process and apparatus for forming discrete microcavities in a filament wire using a polymer etching mask |
| 04/17/2007 | US7204888 Lift pin assembly for substrate processing |
| 04/17/2007 | US7204887 Wafer holding, wafer support member, wafer boat and heat treatment furnace |
| 04/17/2007 | US7204886 Apparatus and method for hybrid chemical processing |
| 04/17/2007 | US7204885 Deposition system to provide preheating of chemical vapor deposition precursors |
| 04/17/2007 | US7204155 Method and apparatus for pressure control and flow measurement |
| 04/12/2007 | WO2007041705A1 Effect materials |
| 04/12/2007 | WO2007041381A1 Ultra smooth nanostructured diamond films and compositions and methods for producing same |
| 04/12/2007 | WO2007041041A2 Bonded multi-layer rf window |
| 04/12/2007 | WO2007041012A2 Batch wafer handling system |
| 04/12/2007 | WO2007040916A2 Apparatus temperature control and pattern compensation |
| 04/12/2007 | WO2007040908A2 Film formation apparatus and methods including temperature and emissivity/pattern compensation |
| 04/12/2007 | WO2007040856A2 Plasma-assisted vapor phase treatment of low dielectric constant films using a batch processing system |
| 04/12/2007 | WO2007040798A2 Method to improve transmittance of an encapsulating film |
| 04/12/2007 | WO2007040701A2 Method for controlling the step coverage |
| 04/12/2007 | WO2007040596A1 Method for purifying a metal carbonyl precursor |
| 04/12/2007 | WO2007040183A1 Silicon-based thin film photoelectric converter, and method and apparatus for manufacturing same |
| 04/12/2007 | WO2007040062A1 Substrate processing apparatus and method for manufacturing semiconductor device |
| 04/12/2007 | WO2007039679A1 Corrosion resistant coating based on silicon, carbon, hydrogen and nitrogen |
| 04/12/2007 | WO2007038967A1 Down-stream plasma etching with deflectable plasma beam |
| 04/12/2007 | WO2007019436A3 Atomic layer deposition of tantalum-containing films using surface-activating agents and novel tantalum complexes |
| 04/12/2007 | WO2007002673A3 Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same |
| 04/12/2007 | WO2006127693A3 Method and apparatus for preventing ald reactants from damaging vacuum pumps |