| Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892) |
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| 05/08/2007 | CA2104590C Coated glass article |
| 05/03/2007 | WO2007049785A1 Surface-coated member, method for manufacture thereof, and cutting tool |
| 05/03/2007 | WO2007049612A1 Film-forming method and film-forming apparatus |
| 05/03/2007 | WO2007048995A1 Method of treating gas |
| 05/03/2007 | WO2007048994A1 Plasma reactor |
| 05/03/2007 | WO2007048993A2 Plasma abatement device |
| 05/03/2007 | WO2007048937A1 Method for monitoring a plasma, device for carrying out this method, use of this method for depositing a film onto a pet hollow body |
| 05/03/2007 | WO2007048912A1 Cooled device for plasma depositing a barrier layer onto a container |
| 05/03/2007 | WO2007048743A1 Rotating machines for treating containers |
| 05/03/2007 | WO2007027350A3 Method of removing surface deposits and passivating interior surfaces of the interior of a chemical vapour deposition (cvd) chamber |
| 05/03/2007 | WO2007017175A3 Vacuum depositing with condensation removing |
| 05/03/2007 | WO2007007003A3 Method for plasma treatment of gas effluents |
| 05/03/2007 | WO2006116776A3 Chemical vapor deposition system and method |
| 05/03/2007 | WO2005060635A3 Electromagnetic control of chemical catalysis |
| 05/03/2007 | US20070100086 Method of fabricating a three-dimensional nanostructure |
| 05/03/2007 | US20070099415 Integration process of tungsten atomic layer deposition for metallization application |
| 05/03/2007 | US20070099029 Enhanced alumina layer produced by CVD |
| 05/03/2007 | US20070098980 Highly Tetrahedral Amorphous Carbon Coatings and Systems and Methods for Their Production |
| 05/03/2007 | US20070098967 a resin base material (polycabonate, polystyrene); an inorganic undercoating of an inorganic compound (SiO2, TiO2 ) deposited on the resin base, Cr or In metal film by physical vapor deposition over oxide film; sheen and discontinuous structrue; high productivity and low cost |
| 05/03/2007 | US20070098897 reacting an ester compound such as an alkyl isobutyrate with a ketone compound such as 3-methylbutanone in the presence of an alkali metal alkoxide as a catalyst |
| 05/03/2007 | US20070098896 Preparation of membranes using solvent-less vapor deposition followed by in-situ polymerization |
| 05/03/2007 | US20070098895 Method and Apparatus for Producing Uniform, Isotropic Stresses in a Sputtered Film |
| 05/03/2007 | US20070098894 Reactor surface passivation through chemical deactivation |
| 05/03/2007 | US20070098893 Coated substrate created by systems and methods for modulation of power and power related functions of PECVD discharge sources to achieve new film properties |
| 05/03/2007 | US20070098892 Method of forming a layer and method of manufacturing a capacitor using the same |
| 05/03/2007 | US20070098891 Vapor deposition apparatus and method |
| 05/03/2007 | US20070098890 Lowering dielectric constant of insulating film formed by chemical vapor deposition, where process gas containing hydrogen atoms is supplied into reaction vessel, and microwave is introduced into vessel to supply uniform electromagnetic wave, thereby generating plasma containing hydrogen radical |
| 05/03/2007 | US20070098889 Vacuum film deposition method and system, and filter manufactured by using the same |
| 05/03/2007 | US20070098623 Method for manufacturing carbon nanotubes |
| 05/03/2007 | US20070096658 Method and apparatus for an improved upper electrode plate in a plasma processing system |
| 05/03/2007 | US20070096321 Conformal lining layers for damascene metallization |
| 05/03/2007 | US20070095791 Substrate processing apparatus and substrate processing method |
| 05/03/2007 | US20070095477 Plasma processing apparatus |
| 05/03/2007 | US20070095291 Holder for Use in Semiconductor or Liquid-Crystal Manufacturing Device and Semiconductor or Liquid-Crystal Manufacturing Device in Which the Holder Is Installed |
| 05/03/2007 | US20070095290 Molecular beam source for use of thin-film accumulation and a method for controlling volume of molecular beam |
| 05/03/2007 | US20070095289 Heat treatment apparatus |
| 05/03/2007 | US20070095288 Thermal processing method and thermal processing unit |
| 05/03/2007 | US20070095287 Plasma producing method and apparatus as well as plasma processing apparatus |
| 05/03/2007 | US20070095286 Apparatus and method for thin film deposition |
| 05/03/2007 | US20070095285 Apparatus for cyclical depositing of thin films |
| 05/03/2007 | US20070095284 Gas treating device and film forming device |
| 05/03/2007 | US20070095283 Pumping System for Atomic Layer Deposition |
| 05/03/2007 | US20070095282 Apparatus for manufacturing semiconductor device with pump unit and method for cleaning the pump unit |
| 05/03/2007 | US20070095281 System and method for power function ramping of microwave liner discharge sources |
| 05/03/2007 | US20070095278 Substrate processing system and method of controlling the same |
| 05/03/2007 | DE102005045717B3 Träger für ein Substrat Support for a substrate |
| 05/03/2007 | CA2627407A1 Method for monitoring a plasma, device for carrying out this method, use of this method for depositing a film onto a pet hollow body |
| 05/02/2007 | EP1780315A2 Boron doped diamond |
| 05/02/2007 | EP1780304A2 PECVD method with modulation of power |
| 05/02/2007 | EP1780303A2 System and method for power function ramping of microwave linear discharge sources |
| 05/02/2007 | EP1780302A2 CVD reactor comprising a gas ring |
| 05/02/2007 | EP1779419A2 Direct liquid injection system and method for forming multi-component dielectric films |
| 05/02/2007 | EP1779411A1 Deposition technique for producing high quality compound semiconductor materials |
| 05/02/2007 | EP1778891A1 Divided solid composition composed of grains provided with continuous metal deposition, method for the production and use thereof in the form of a catalyst |
| 05/02/2007 | EP1778890A1 Method for production of reactors for the decomposition of gases |
| 05/02/2007 | EP1376667B1 Heat treating device |
| 05/02/2007 | EP1147242A4 Large area plasma source |
| 05/02/2007 | EP1119030B1 Plasma reactor |
| 05/02/2007 | EP1027475A4 Large area microwave plasma apparatus with adaptable applicator |
| 05/02/2007 | CN1957469A Manufacture of porous diamond films |
| 05/02/2007 | CN1957447A III nitride semiconductor crystal and manufacturing method thereof, III nitride semiconductor device and manufacturing method thereof, and light emitting device |
| 05/02/2007 | CN1957446A Fabrication of crystalline materials over substrates |
| 05/02/2007 | CN1957428A High-throughput ex-situ method for rare-earth-barium-copper-oxide film growth |
| 05/02/2007 | CN1957180A Gas supply system for a pumping arrangement |
| 05/02/2007 | CN1957116A Nanocrystal diamond film, process for producing the same and apparatus using nanocrystal diamond film |
| 05/02/2007 | CN1957110A Material for chemical vapor deposition and thin film forming method |
| 05/02/2007 | CN1957109A Plasma enhanced chemical vapor deposition of metal oxide |
| 05/02/2007 | CN1957108A Multi-stage curing method of low k nano-porous films |
| 05/02/2007 | CN1956778A Method of oxidizing substance and oxidizing apparatus thereof |
| 05/02/2007 | CN1956777A Tailored and uniform coatings in microchannel apparatus |
| 05/02/2007 | CN1956776A Micro-channel device, protected alloy surface in catalyst, alumina supported catalyst, catalyst intermediate, and method for forming catalyst and micro-channel device |
| 05/02/2007 | CN1956166A Method of forming metal film and tungsten film |
| 05/02/2007 | CN1956151A Manufacturing method for semiconductor and accessorial device |
| 05/02/2007 | CN1956150A Semiconductor film, semiconductor device and method of their production |
| 05/02/2007 | CN1956145A Semiconductor process chamber |
| 05/02/2007 | CN1955338A Vaporizer and semiconductor processing system |
| 05/02/2007 | CN1955337A Low temp polysilicon film device and its manufacturing method and equipment |
| 05/02/2007 | CN1314075C Shielding system for plasma chamber |
| 05/02/2007 | CN1313894C Partial pressure control system, flow rate control system and shower plate used for partial pressure control system |
| 05/02/2007 | CN1313653C Growth of very uniform silicon carbide external layers |
| 05/02/2007 | CN1313640C Process for plasma strengthening type chemical vapour phase deposition treatment |
| 05/02/2007 | CN1313639C Auxiliary device for changing gas-filling pipe in furnace tube |
| 05/02/2007 | CN1313638C Surface treatment system and method |
| 05/02/2007 | CN1313198C Method for carrying out homogeneous and heterogeneous chemical reactions using plasma |
| 05/01/2007 | US7211708 Exhaust processing method, plasma processing method and plasma processing apparatus |
| 05/01/2007 | US7211524 Method of forming insulating layer in semiconductor device |
| 05/01/2007 | US7211514 Heat-processing method for semiconductor process under a vacuum pressure |
| 05/01/2007 | US7211513 Process for chemical vapor desposition of a nitrogen-doped titanium oxide coating |
| 05/01/2007 | US7211508 Atomic layer deposition of tantalum based barrier materials |
| 05/01/2007 | US7211506 Methods of forming cobalt layers for semiconductor devices |
| 05/01/2007 | US7211497 Method for fabricating semiconductor devices |
| 05/01/2007 | US7211337 Compound crystal and method of manufacturing same |
| 05/01/2007 | US7211333 Electroconductive aluminum film with uneven portions on its front face and an electroformed electroconductive layer (especially Ni) on its back face with a continuously changing compounding ratio of Al to electroconductive metal from front face to back face; used for making light guides for LCDs |
| 05/01/2007 | US7211300 Passing a donor compound suspended in a carrier gas, the donor compound including the one or more elements for deposition over substrate so as to form a film of the donor compound on the substrate; irradiating with optical radiation |
| 05/01/2007 | US7211296 Chalcogenide glass nanostructures |
| 05/01/2007 | US7211295 Heating a reaction chamber to a predetermined temperature, the reaction chamber containing an object to be processed having a surface provided with at least a silicon layer, energizing a gas prior to reaching the reaction chamber to produce water, forming silicon dioxide film |
| 05/01/2007 | US7211170 Twist-N-Lock wafer area pressure ring and assembly |
| 05/01/2007 | US7211154 Electrode-built-in susceptor |
| 05/01/2007 | US7211153 Ceramic joined body, substrate holding structure and substrate processing apparatus |
| 05/01/2007 | US7211152 Heating element CVD system and connection structure between heating element and electric power supply mechanism in the heating element CVD system |