Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
05/2007
05/31/2007DE102005056536A1 Chemical vapor deposition reactor for production of semiconductor devices has encapsulated electrical resistance heater
05/31/2007DE102005056323A1 Device for simultaneously depositing layers on a number of substrates comprises process chambers arranged in a modular manner in a reactor housing
05/31/2007DE102004028369B4 Verfahren und Vorrichtung zum Behandeln von Substraten in einer Rundläuferanlage Method and apparatus for treating substrates in a rotary system
05/30/2007EP1790759A1 NITRIDE SEMICONDUCTOR SINGLE CRYSTAL INCLUDING Ga, METHOD FOR MANUFACTURING THE SAME, AND SUBSTRATE AND DEVICE USING THE CRYSTAL
05/30/2007EP1790758A1 Atomic layer deposition (ald) method for producing a high quality layer
05/30/2007EP1790757A1 Susceptor
05/30/2007EP1790224A1 Antimicrobial layered material
05/30/2007EP1789689A2 Carbon and metal nanomaterial composition and synthesis
05/30/2007EP1789607A2 Cutting tool with oxide coating
05/30/2007EP1789605A2 Plasma uniformity control by gas diffuser curvature
05/30/2007EP1789604A2 Adhesion layer for thin film transistors
05/30/2007EP1789603A1 Metal product, method of manufacturing a metal product and use thereof
05/30/2007EP1660238A4 Metalorganic chemical vapor deposition (mocvd) process and apparatus to produce multi-layer high-temperature superconducting (hts) coated tape
05/30/2007EP1593147B1 Purged heater-susceptor for an ald/cvd reactor
05/30/2007EP1309733B1 Chromium-containing cemented carbide body having a surface zone of binder enrichment
05/30/2007EP1307340A4 Reduced grain boundary crystalline thin films
05/30/2007EP1214732B1 Semiconductor processing equipment having radiant heated ceramic liner
05/30/2007EP1073779A4 Reduced impedance chamber
05/30/2007CN1973356A Use of an active wafer temperature control independent from wafer emissivity
05/30/2007CN1973061A Improvement of water-barrier performance of an encapsulating film
05/30/2007CN1973060A Machine for the treatment of bottles that are equipped with an interchangeable connection cartridge
05/30/2007CN1973059A Vacuum film forming apparatus
05/30/2007CN1972879A Selective doping of a material
05/30/2007CN1971840A Film formation apparatus and method of using the same
05/30/2007CN1970834A Film structure, its removing method, and method for testing semiconductor machine
05/30/2007CN1970833A Method for deposition of CIGS solar battery window layer
05/30/2007CN1970832A Selective aluminide coating process
05/30/2007CN1970831A Chemical vapour deposition device
05/30/2007CN1970564A Precursor, thin layer prepared including the precursor, method of preparing the thin layer and phase-change memory device
05/30/2007CN1319355C Inner noise immunizing data communication scheme
05/30/2007CN1319146C Integration of ald tantalum nitride and alpha-phase tantalum for copper metallization application
05/30/2007CN1319134C Method of selective deposition of a barrier layer on a dielectric material
05/30/2007CN1319126C Nozzle of CVD equipment for mfg of semiconductor device
05/30/2007CN1319125C Deposition method of insulating layers having low dielectric constant of semiconductor device
05/30/2007CN1318780C Chain driving system
05/30/2007CN1318643C Deposited film forming method and apparatus
05/29/2007US7224532 Comprising tetramantane, pentamantane, hexamantane, heptamantane, octamantane, nonamantane, decamantane, undecamantane, and/or heterodiamondoid; nucleated vapor deposited films; solid state dye or semiconductor lasers, light emitting diodes, solar cells, lenses, mirrors, antireflection coatings, windows
05/29/2007US7223702 Method of and apparatus for performing sequential processes requiring different amounts of time in the manufacturing of semiconductor devices
05/29/2007US7223701 In-situ sequential high density plasma deposition and etch processing for gap fill
05/29/2007US7223676 Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
05/29/2007US7223627 Memory element and its method of formation
05/29/2007US7223448 Methods for providing uniformity in plasma-assisted material processes
05/29/2007US7223446 Plasma CVD apparatus and dry cleaning method of the same
05/29/2007US7223442 Method for producing a conducting doped diamond-like nanocomposite film and a conducting doped diamond-like nanocomposite film
05/29/2007US7223441 Method for depositing gallium oxide coatings on flat glass
05/29/2007US7223321 Faraday shield disposed within an inductively coupled plasma etching apparatus
05/29/2007US7223308 Apparatus to improve wafer temperature uniformity for face-up wet processing
05/28/2007CA2568449A1 Duplex gas phase coating
05/24/2007WO2007059140A1 Method of removing surface deposits from reaction chambers using nf3
05/24/2007WO2007058720A1 Method for fabricating controlled stress silicon nitride films
05/24/2007WO2007058365A1 Composition for chemical vapor deposition film-formation and method for production of low dielectric constant film
05/24/2007WO2007058120A1 Process for producing semiconductor device and substrate treatment apparatus
05/24/2007WO2007057631A2 Improved bubbler for the transportation of substances by a carrier gas
05/24/2007WO2007057519A1 Ald reactor
05/24/2007WO2007057518A1 Arrangement in connection with ald reactor
05/24/2007WO2007057478A1 Part having an outer polymer surface with a metallic finish, production method thereof and use of same
05/24/2007WO2007057443A1 Cvd reactor with slidingly mounted susceptor holder
05/24/2007WO2007056785A1 Metal carbonitride layer and method for the production of a metal carbonitride layer
05/24/2007WO2007056779A1 Coated hard metal member
05/24/2007WO2007037504A9 Method for producing group 3-5 nitride semiconductor and method for manufacturing light-emitting device
05/24/2007WO2007036639A3 Method for preparing an oriented and nanostructured surface of a polymer
05/24/2007WO2007035741A3 Process for plasma assisted coating a nanocomposite object
05/24/2007WO2007018757A3 Glazing system for vehicle tops and windows
05/24/2007WO2007008726A3 Use of surfactants to control unintentional dopant in semiconductors
05/24/2007WO2007005832A9 Reliant thermal barrier coating system and related methods and apparatus of making the same
05/24/2007WO2007000556A3 Composite films based on metal and on oxide for antimicrobial applications and method for protecting or decontaminating a substrate by using films of this type
05/24/2007WO2006060134A8 Restricted radiated heating assembly for high temperature processing
05/24/2007WO2005067423A3 Disposition source using pellets for making oleds
05/24/2007US20070117385 Tantalum amide complexes for depositing tantalum-containing films, and method of making same
05/24/2007US20070117384 Chemical vapor deposition metallization processes and chemical vapor deposition apparatus used therein
05/24/2007US20070117383 Precursor material delivery system with staging volume for atomic layer deposition
05/24/2007US20070117363 Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus
05/24/2007US20070117356 Method of manufacturing single crystalline gallium nitride thick film
05/24/2007US20070117309 Method for fabricating capacitor in semiconductor device
05/24/2007US20070117290 Method of manufacturing a low temperature polysilicon film
05/24/2007US20070116986 Method for depositing zinc oxide at low temperatures and products formed thereby
05/24/2007US20070116893 Low-hydrogen photovoltaic cell
05/24/2007US20070116892 treating a photovoltaic precursor with a vaporous element, for example, selenium or sulfur, to produce thin film CIGS or CIGSS solar cells
05/24/2007US20070116891 Plasma brush apparatus and method
05/24/2007US20070116888 Method and system for performing different deposition processes within a single chamber
05/24/2007US20070116887 Method and system for performing plasma enhanced atomic layer deposition
05/24/2007US20070116877 Using a droplet discharge method; useful for formation of fine wiring patterns, such as those used in semiconductor integrated circuits
05/24/2007US20070116876 Copper (i) compounds useful as deposition precursors of copper thin films
05/24/2007US20070116875 Strip process for superalloys
05/24/2007US20070116874 Flowing an aluminide gas into the interior passages of turbine engine component to coat and exiting openings to external surfaces; flowing a gas selected from argon, hydrogen,and/or inert gases, over the external surfaces to minimize build-up of an aluminide coating on the exterior
05/24/2007US20070116873 Apparatus for thermal and plasma enhanced vapor deposition and method of operating
05/24/2007US20070116872 Apparatus for thermal and plasma enhanced vapor deposition and method of operating
05/24/2007US20070116622 Increased stability low concentration gases, products comprising same, and methods of making same
05/24/2007US20070116443 Led heat lamp arrays for cvd heating
05/24/2007US20070114214 Scanning laser light source
05/24/2007US20070113981 Etch system with integrated inductive coupling
05/24/2007US20070113979 Slotted Electrostatic Shield Modification for Improved Etch and CVD Process Uniformity
05/24/2007US20070113978 Plasma processing apparatus and method
05/24/2007US20070113975 Plasma reaction chamber assemblies
05/24/2007US20070113789 Method and system for depositing material on a substrate using a solid precursor
05/24/2007US20070113788 Plasma processing equipment
05/24/2007US20070113787 Plasma process apparatus
05/24/2007US20070113786 Radio frequency grounding rod
05/24/2007US20070113785 Radio frequency grounding apparatus
05/24/2007US20070113784 Vacuum metallization device with means to create metal-free areas