Patents
Sitemap › C23 - Coating metallic material; Coating material with metallic material; Chemical surface treatment; Diffusion treatment of metallic material; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general; Inhibiting corrosion of metallic material or incrustation in general › C23C - Coating metallic material; Coating material with metallic material; Surface treatment of metallic material by diffusion into the surface, by chemical conversion or substitution; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general › C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes
Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
10/2007
10/24/2007CN101061255A Low temperature SiN deposition methods
10/24/2007CN101061254A Alloyed tungsten produced by chemical vapour deposition
10/24/2007CN101061253A Substrate processing apparatus using a batch processing chamber
10/24/2007CN101058872A Gas distribution device for treating reactor by semiconductor technological element and reactor thereof
10/24/2007CN100345260C Method for mitigating chemical vapor deposition phosphorus doping oxide surface induced defects
10/24/2007CN100345255C Vapor phase growth method for Al-containing III-V group compound semiconductor, and method and device for producing Al-containing III-V group compound semiconductor
10/24/2007CN100345254C Formation of high-mobility silicon-germanium structures by low-energy plasma enhanced chemical vapor deposition
10/24/2007CN100345033C Susceptor for deposition process equipment and method of fabricating a heater therein
10/24/2007CN100344890C Sliding member and production process thereof
10/24/2007CN100344790C Method for depositing silicon nitride films and silicon oxynitride films by chemical vapor deposition technology
10/23/2007USRE39893 Cemented carbide insert
10/23/2007US7285500 Thin films and methods of making them
10/23/2007US7285493 Methods of forming a metal layer using transition metal precursors
10/23/2007US7285312 Atomic layer deposition for turbine components
10/23/2007US7285308 CVD of a ruthenium nucleation layer followed by CVD of a highly conductive ruthenium upper layer, both using low deposition rates
10/23/2007US7285196 Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals
10/18/2007WO2007118252A2 System architecture and method for solar panel formation
10/18/2007WO2007118006A2 Method of forming mixed rare earth nitride and aluminum nitride films by atomic layer deposition
10/18/2007WO2007117989A2 Method of forming mixed rare earth oxynitride and aluminum oxynitride films by atomic layer deposition
10/18/2007WO2007117898A1 System for introducing a precursor gas to a vapor deposition system
10/18/2007WO2007117894A1 Thermal processing furnace, gas delivery system therefor, and methods for delivering a process gas thereto
10/18/2007WO2007117838A2 Atomic layer deposition coatings for implantable medical devices
10/18/2007WO2007117797A2 Method of forming a metal carbide or metal carbonitride film having improved adhesion
10/18/2007WO2007117742A2 Batch processing system and method for performing chemical oxide removal
10/18/2007WO2007117583A2 Cluster tool for epitaxial film formation
10/18/2007WO2007117576A2 Gas manifolds for use during epitaxial film formation
10/18/2007WO2007117320A2 A method to improve the ashing/wet etch damage resistance and integration stability of low dielectric constant films
10/18/2007WO2007117305A2 High-throughput deposition system for oxide thin film growth by reactive coevaportation
10/18/2007WO2007117294A2 System and method for continuous deposition of graded coatings
10/18/2007WO2007117143A1 Method and device for reducing formation of particulate matter in gas streams
10/18/2007WO2007116969A1 Processing apparatus and processing method
10/18/2007WO2007116940A1 Processing apparatus
10/18/2007WO2007116768A1 Semiconductor device manufacturing method and substrate processing apparatus
10/18/2007WO2007116644A1 Plasma cvd apparatus, method for forming thin film and semiconductor device
10/18/2007WO2007116600A1 Base substrate for epitaxial diamond film, method for manufacturing the base substrate for epitaxial diamond film, epitaxial diamond film manufactured by the base substrate for epitaxial diamond film, and method for manufacturing the epitaxial diamond film
10/18/2007WO2007116522A1 Method of removing diamond coating
10/18/2007WO2007116033A1 Etching process
10/18/2007WO2007115964A1 Process for the treatment of metal coated particles
10/18/2007WO2007033282A3 Methods of making shape memory films by chemical vapor deposition and shape memory devices made thereby
10/18/2007WO2007032826A3 Precursor gas delivery with carrier gas mixing
10/18/2007WO2006101693A3 Coils utilized in vapor deposition applications and methods of production
10/18/2007WO2006053219A8 Vertical production of photovoltaic devices
10/18/2007WO2006053218A8 Pressure control system in a photovoltaic substrate deposition
10/18/2007US20070243642 Method of Evaluating Characteristics of and Forming of an Insulating Film For a Semiconductor Device
10/18/2007US20070243459 Method and apparatus for thin-film battery having ultra-thin electrolyte
10/18/2007US20070243398 Process for diffusing titanium and nitride into a material having a coating thereon and products produced thereby
10/18/2007US20070243386 Process for preparation of multi-thin layered structure
10/18/2007US20070243338 Plasma deposition apparatus and method for making solar cells
10/18/2007US20070243328 P-type semiconductor zinc oxide films process for preparation thereof, and pulsed laser deposition method using transparent substrates
10/18/2007US20070243327 Film forming method and apparatus
10/18/2007US20070243326 Synthesis of single-walled carbon nanotubes
10/18/2007US20070243325 ALD method and apparatus
10/18/2007US20070243317 Thermal Processing System and Configurable Vertical Chamber
10/18/2007US20070243314 Image processing apparatus and method
10/18/2007US20070243313 Method of manufacturing radiographic image conversion panel
10/18/2007US20070240783 Container-Treatment Machine Comprising Controlled Gripping Means for Seizing Containers by the Neck
10/18/2007US20070240646 Substrate treatment apparatus
10/18/2007US20070240644 Vertical plasma processing apparatus for semiconductor process
10/18/2007US20070240632 Silicon-containing layer deposition with silicon compounds
10/18/2007DE4480113B4 Zähne für ein Webblatt in einer Hochgeschwindigkeitswebmaschine und ein Verfahren zur Herstellung derselben Teeth for a weaving reed in a Hochgeschwindigkeitswebmaschine and a method of manufacturing the same
10/18/2007CA2648570A1 Method and device for reducing formation of particulate matter in gas streams
10/17/2007EP1845553A1 Semiconductor manufacturing apparatus, abnormality detection in such semiconductor manufacturing apparatus, method for specifying abnormality cause or predicting abnormality, and recording medium wherein computer program for executing such method is recorded
10/17/2007EP1845172A2 Method and apparatus for achieving maximum yield in the electrolytic preparation of group IV and V hydrides
10/17/2007EP1845100A1 CYCLIC SILOXANE COMPOUND, Si-CONTAINING FILM-FORMING MATERIAL, AND USE THEREOF
10/17/2007EP1844180A1 Gas distributor with pre-chambers arranged in planes
10/17/2007EP1844179A1 Method for chemical infiltration in the gas phase for the densification of porous substrates with pyrolytic carbon
10/17/2007EP1844178A2 High accuracy vapor generation and delivery for thin film deposition
10/17/2007EP1843859A2 Hydrophilic dlc on substrate with flame pyrolysis treatment
10/17/2007EP1483428B1 Diamond electrode
10/17/2007EP0920542B1 Chemical vapor deposition of fluorocarbon polymer thin films
10/17/2007CN200961147Y Reaction chamber for coating rubber bottle stopper
10/17/2007CN101057319A Thermal control of dielectric components in a plasma discharge device
10/17/2007CN101054661A Method of improving integrated capability for diamond film by high-temperature high-pressure method
10/17/2007CN101054660A Low-k dielectric layers for large substrates
10/17/2007CN101054019A Droplet ejection head, method of producing the same and droplet ejection apparatus
10/17/2007CN100343960C Method for forming silica layer on substrate by adopting atomic layer deposition technique
10/17/2007CN100343950C Lining heating device and multi-chamber lining treatment system
10/17/2007CN100343424C Method for manufacturing a free-standing substrate made of monocrystalline semi-conductor material
10/17/2007CN100343418C Organic zirconium composite material, its synthetic process, stock solution contg same, and method of froming lead zirconate titanate membrane
10/17/2007CN100343417C Method for forming interconnection metal layer, method for selectively forming metal, apparatus for selectively forming metal, and substrate apparatus
10/17/2007CN100343029C Ultrasonic cutting tool coated with diamond CVD
10/16/2007USRE39884 Cemented carbide body of tungsten carbide, cobalt, and cubic arbides of tantalum, titanium, or niobium; and coating of titanium oxycarbonitride; smoothness, wear resistance, noncracking
10/16/2007US7282774 Semiconductor device and method for manufacturing semiconductor device
10/16/2007US7282738 Fabrication of crystalline materials over substrates
10/16/2007US7282458 Low K and ultra low K SiCOH dielectric films and methods to form the same
10/16/2007US7282454 Switched uniformity control
10/16/2007US7282244 Replaceable plate expanded thermal plasma apparatus and method
10/16/2007US7282239 Flowing a first pulse of a gas through a conduit, a valve, and a second gas conduit and into the reaction chamber; the second gas conduit is downstream from the first valve; flowing a second and a third pulse of the gas; first and second valves are configured in a parallel arrangement
10/16/2007US7282158 Method of processing a workpiece
10/16/2007US7282132 Film of zinc oxide electrochemically deposited from an aqueous solution is subjected to heat treatment at a temperature equal to or higher than 150 degrees C. and equal to or lower than 400 degrees C. in a nitrogen or inert gas atmosphere that contains oxygen, thereby obtaining a zinc oxide film
10/16/2007US7282112 Method and apparatus for an improved baffle plate in a plasma processing system
10/16/2007US7282097 Slit valve door seal
10/16/2007US7282096 Arrangement comprising a support body and a substrate holder which is driven in rotation and gas-supported thereon
10/16/2007US7281492 System and method for generating a discharge in gases
10/16/2007US7281491 Dielectric-coated electrode, plasma discharge treatment apparatus and method for forming thin film
10/11/2007WO2007115029A2 Method of forming mixed rare earth oxide and mixed rare earth aluminate films by atomic layer deposition
10/11/2007WO2007114474A1 Liquid material vaporizer
10/11/2007WO2007114427A1 Exhaust structure of film-forming apparatus, film-forming apparatus, and method for processing exhaust gas
10/11/2007WO2007114335A1 Substrate processing apparatus and substrate placing table
10/11/2007WO2007114191A1 Membrane structure element and method for manufacturing same
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