Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
12/2007
12/26/2007CN101093786A Uv cure system
12/26/2007CN101093771A Field emission body of Nano carbon tube, and preparation method
12/26/2007CN101092735A Multi-piece ceramic crucible and method for making thereof
12/26/2007CN101092691A Elimination of first wafer effect for pecvd films
12/26/2007CN101092690A Metal-organic vaporizing and feeding apparatus
12/26/2007CN101092689A Low-impurity organosilicon product as precursor for cvd
12/26/2007CN101092688A Ion plating modified method for bipolar plate of stainless steel for fuel cell in type of proton exchange membrane
12/26/2007CN100358132C Thermal interface material producing method
12/26/2007CN100358112C Method for preparing poly crystal germanium silicon film
12/26/2007CN100358105C Method for preparing Poly-SiGe film
12/26/2007CN100358098C Semiconductor arts piece processing device
12/26/2007CN100358097C Semiconductor technology processing system and method
12/26/2007CN100358092C Pull-down mechanism for supporting centre
12/26/2007CN100357489C Low contamination components for semiconductor processing apparatus and methods for making components
12/26/2007CN100357488C Manufacture of cutting tool with coated diamond film
12/26/2007CN100357487C Structure of reaction chamber in multiple laminar flows in chemical vapor deposition equipment for metal organic matter
12/25/2007US7312524 Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made
12/25/2007US7312494 Lanthanide oxide / hafnium oxide dielectric layers
12/25/2007US7312480 Semiconductor device and method of fabricating the same
12/25/2007US7312422 Semiconductor batch heating assembly
12/25/2007US7312415 Plasma method with high input power
12/25/2007US7312165 Codeposition of hafnium-germanium oxides on substrates used in or for semiconductor devices
12/25/2007US7312163 Atomic layer deposition methods, and methods of forming materials over semiconductor substrates
12/25/2007US7312156 Method and apparatus for supporting a semiconductor wafer during processing
12/25/2007US7312091 Methods for forming a ferroelectric layer and capacitor and FRAM using the same
12/25/2007US7311981 Gas turbine part provided with a protective coating
12/25/2007US7311979 Outermost layer consisting of platinum and a ceramic barrier layer; platinum catalyzes the hydrocarbon fuel to form particulates of carbonaceous gum suspended within the fuel; gas turbine engine component
12/25/2007US7311947 Laser assisted material deposition
12/25/2007US7311946 Carbiding, nitriding or metallization; vapor deposition of carbides, carbonitrides, nitrides or metal silicon nitrides or carbides from organometallic compounds in presence of adhesion promoter; forming copper film
12/25/2007US7311942 Using a compound to as scavenger for halogen compound
12/25/2007US7311851 Apparatus and method for reactive atom plasma processing for material deposition
12/25/2007US7311797 Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
12/25/2007US7311796 Plasma processing apparatus
12/25/2007US7311783 Multiple axis tumbler coating apparatus
12/25/2007US7311782 Apparatus for active temperature control of susceptors
12/25/2007US7311779 Heating apparatus to heat wafers using water and plate with turbolators
12/25/2007US7311776 Localized synthesis and self-assembly of nanostructures
12/25/2007US7311109 Method for cleaning a processing chamber and method for manufacturing a semiconductor device
12/21/2007WO2007146803A2 Methods and apparatus for preventing plasma un-confinement events in a plasma processing chamber
12/21/2007WO2007146569A1 A method of depositing an abrasion-resistant layer onto an electroluminescent plastic window
12/21/2007WO2007146537A2 Method of forming a layer of material using an atomic layer deposition process
12/21/2007WO2007145513A1 Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma
12/21/2007WO2007145292A1 Method for forming thin film
12/21/2007WO2007145229A1 Shower plate, method for manufacturing the shower plate, plasma processing apparatus using the shower plate, plasma processing method and electronic device manufacturing method
12/21/2007WO2007145132A1 Placing table structure and heat treatment apparatus
12/21/2007WO2007145075A1 Silicon thin-film and method of forming silicon thin-film
12/21/2007WO2007145070A1 Placing table structure and heat treatment apparatus
12/21/2007WO2007144378A2 Cleaning device and cleaning process for a plasma reactor
12/21/2007WO2007126582A3 Apparatus for atomic layer deposition
12/21/2007WO2007046841A3 Ceramic components, coated structures and methods for making same
12/21/2007WO2007016701A3 Deposition apparatus for semiconductor processing
12/21/2007WO2006104841A3 Methods and apparatus for determining the endpoint of a cleaning or conditioning process in a plasma processing system
12/21/2007WO2006083481A3 Chemical vapor deposition of chalcogenide materials
12/20/2007US20070292719 Component comprising a masking layer
12/20/2007US20070292711 For internal combusion engines; diamond-like carbon protective coatings
12/20/2007US20070292710 Method for repairing components using environmental bond coatings and resultant repaired components
12/20/2007US20070292672 Coated inserts
12/20/2007US20070292628 Method of Forming Metal Oxide Using an Atomic Layer Deposition Process
12/20/2007US20070292616 Gas turbine engines; protective coatings
12/20/2007US20070292615 Processes and systems for engineering a silicon-type surface for selective metal deposition to form a metal silicide
12/20/2007US20070292614 Apparatus and method for manufacturing large-area carbon nanotube films
12/20/2007US20070292613 Thin Film Dielectrics With Perovskite Structure and Preparation Thereof
12/20/2007US20070292612 Metal-organic vaporizing and feeding apparatus, metal-organic chemical vapor deposition apparatus, metal-organic chemical vapor deposition method, gas flow rate regulator, semiconductor manufacturing apparatus, and semiconductor manufacturing method
12/20/2007US20070292611 Processing apparatus and processing method
12/20/2007US20070292610 Film formation source, film formation apparatus, film formation method, organic EL panel, and method of manufacturing organic EL panel
12/20/2007US20070292603 Processes and systems for engineering a barrier surface for copper deposition
12/20/2007US20070292599 Method for determining a required paint quantity
12/20/2007US20070292598 Substrate Processing Method and Substrate Processing Apparatus
12/20/2007US20070289610 Method for processing interior of vapor phase deposition apparatus, method for depositing thin film and method for manufacturing semiconductor device
12/20/2007US20070289535 Substrate Surface Treating Apparatus
12/20/2007US20070289534 Process chamber for dielectric gapfill
12/20/2007US20070289533 Plasma processing apparatus and plasma processing method
12/20/2007US20070289532 Apparatus for Effecting Plasma Chemical Vapor Deposition (PCVD)
12/20/2007US20070289531 Batch-type deposition apparatus having a gland portion
12/20/2007DE60127252T2 Epitaktischer siliziumwafer frei von selbstdotierung und rückseitenhalo Epitaxial silicon wafer itself free from doping and, back halo
12/20/2007DE19649508B4 Halter für Halbleiterplatten Holders for semiconductor wafers
12/20/2007DE102006027932A1 Method for the deposition of layers in a process chamber used in the production of electronic components comprises using a first starting material containing two beta-diketones and a diene coordinated with a ruthenium atom
12/19/2007EP1867756A2 Coated cutting tool insert
12/19/2007EP1867755A2 Coated cutting tool insert
12/19/2007EP1867751A1 Plasma CVD method, plasma CVD device and electrode
12/19/2007EP1866947A1 Termination of secondary frequencies in rf power delivery
12/19/2007EP1866465A2 Reaction system for growing a thin film
12/19/2007EP1866458A2 Temperature control unit for bubblers
12/19/2007EP1866076A1 Method of treating a gas stream
12/19/2007EP1292970A4 Thin film forming method
12/19/2007EP1135545B1 Removing oxides or other reducible contaminants from a substrate by plasma treatment
12/19/2007CN101091420A Surface wave excitation plasma generator and surface wave excitation plasma processing system
12/19/2007CN101091006A Seal structure of vacuum apparatus
12/19/2007CN101091005A Method for forming tantalum nitride film
12/19/2007CN101091004A Method for forming tantalum nitride film
12/19/2007CN101091003A Method for forming tantalum nitride film
12/19/2007CN101091002A Method for forming tantalum nitride film
12/19/2007CN101091001A Method for forming tantalum nitride film
12/19/2007CN101091000A Method for forming tantalum nitride film
12/19/2007CN101090999A Diamond covered substrate, filtration filter, and electrode
12/19/2007CN101090998A Multi-gas distribution injector for chemical vapor deposition reactors
12/19/2007CN101090990A Electromagnetic control of chemical catalysis
12/19/2007CN101089223A Apparatus for effecting plasma chemical vapor deposition (pcvd)
12/19/2007CN101089222A 硬碳膜和硬碳膜滑动构件 Hard carbon and hard carbon sliding member
12/19/2007CN101089221A Manufacturing method of diamond coating film and its application