Patents
Sitemap › C23 - Coating metallic material; Coating material with metallic material; Chemical surface treatment; Diffusion treatment of metallic material; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general; Inhibiting corrosion of metallic material or incrustation in general › C23C - Coating metallic material; Coating material with metallic material; Surface treatment of metallic material by diffusion into the surface, by chemical conversion or substitution; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general › C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes
Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
11/2007
11/01/2007US20070251453 Plasma processing apparatus having an evacuating arrangement to evacuate gas from a gas-introducing part of a process chamber
11/01/2007US20070251452 Processing Apparatus Using Source Gas and Reactive Gas
11/01/2007US20070251451 Nanolayer Thick Film Processing System
11/01/2007US20070251445 forming a tantalum containing multilayer film, using a radio frequency power to perform plasma enhanced atomic layer deposition; semiconductor integrated circuit; forming tantalum, tantalum nitride, tantalum carbonitride
11/01/2007CA2649986A1 Process furnace or the like.
10/2007
10/31/2007EP1849889A1 Process furnace or the like
10/31/2007EP1849789A1 Metal complexes of polydentate beta-ketoiminates
10/31/2007EP1849593A1 Gas-barrier film, process for producing gas-barrier film, resin base with the gas-barrier film for organic electroluminescent element, and organic electroluminescent element
10/31/2007EP1729894B1 Coating of a polymer layer using low power pulsed plasma in a plasma chamber of a large volume
10/31/2007EP1676294A4 Thermal processing system with cross flow injection system with rotatable injectors
10/31/2007DE112005003045T5 Verfahren und Vorrichtung zum flussabwärtsdissoziieren von Gasen Method and apparatus for flussabwärtsdissoziieren of gases
10/31/2007DE102006019866A1 Multifunktionelle Hartstoffschichten Multifunctional hard coatings
10/31/2007DE102006019664A1 Kaltplasma-Handgerät zur Plasma-Behandlung von Oberflächen Cold plasma handset for plasma treatment of surfaces
10/31/2007CN200967836Y Silicon carbide soft landing loader
10/31/2007CN101065836A Film forming method, semiconductor device manufacturing method, semiconductor device, program and recording medium
10/31/2007CN101065835A Method to deposit functionally graded dielectric films via chemical vapor deposition using viscous precursors
10/31/2007CN101065824A Vacuum processing chamber for very large area substrates
10/31/2007CN101065616A Method and system for wafer temperature control
10/31/2007CN101065516A Multi-tray film precursor evaporation system and thin film deposition system incorporating same
10/31/2007CN101065515A Multi-tray film precursor evaporation system and thin film deposition system incorporating same
10/31/2007CN101065514A Method and system for measuring a flow rate in a solid precursor delivery system
10/31/2007CN101065513A Gas distribution system for improved transient vapor phase deposition
10/31/2007CN101065512A High resolution substrate holder leveling device and method
10/31/2007CN101065390A Organometallic precursor compounds
10/31/2007CN101065349A Alkoxide compound, thin film-forming material and method for forming thin film
10/31/2007CN101065335A Method for transferring a functional organic molecule onto a transparent substrate
10/31/2007CN101064987A Plasma processing apparatus and apparatus for supplying RF power
10/31/2007CN101063197A Cleaning method of chemical vapor deposition equipment
10/31/2007CN101063196A Method and apparatus for using solution based precursors for atomic layer deposition
10/31/2007CN101063195A Process furnance or the like
10/31/2007CN100346462C Workpiece fixer for machining apparatus and machining apparatus using said fixer
10/31/2007CN100346448C Atomic layer deposition methods and atomic layer deposition device
10/31/2007CN100345999C Process for chemical vapor phase depositing titaniam nitride containing silicon using titanium containing organic metal material
10/30/2007US7289866 Plasma processing method and apparatus
10/30/2007US7288746 Integrated thermal unit having laterally adjacent bake and chill plates on different planes
10/30/2007US7288492 Method for forming interconnects on thin wafers
10/30/2007US7288321 Using metal substrate, catalyst
10/30/2007US7288313 Laminated body
10/30/2007US7288311 Barrier film
10/30/2007US7288292 PECVD of a cyclic siloxane, organic molecules, tetramethylorthosilicate (TMOS), tetraethylorthosilicate (TEOS), vinyltriethoxysilane, allyltrimethoxysilane, vinyltrimethoxysilane, allyltriethoxysilane, phenyltriethoxysilane orphenyltrimethoxysilane; improved elastic modulus and hardness.
10/30/2007US7288286 Providing organic material in a powdered form in container and a second organic material in a second container spaced from the first container; fluidizing organic material in first container, transferring into a manifold, and vaporizing the first organic material in the manifold; fluidizing
10/30/2007US7288285 Providing electrode over substrate;forming aorganic layer over electrode by: roviding first particulate organic material in first feeding path; mechanically transferring material consisting of the first particulate organic material to a first vaporization zone using an auger structure, forming electrde
10/30/2007US7288284 Cleaning chamber using a chlorine containing etchant to remove silicon residues from chamber; providing a seasoning film comprises silicon carbide on interior surfaces chamber by introducing precursor gases comprising trimethylsilane and carbon dioxide
10/30/2007US7288166 Plasma processing apparatus
10/30/2007US7288145 Silicon oxynitride, silicon nitride, silicon oxide, a substituted hydrazinosilane, ammonia, nitrogen, hydrazine; silicon-containing dielectric films grown at low thermal conditions, reduced carbon contamination, low hydrogen contamination
10/25/2007WO2007121270A1 Epitaxial growth of iii-nitride compound semiconductors structures
10/25/2007WO2007121249A2 Process for forming cobalt-containing materials
10/25/2007WO2007121202A1 Apparatus and methods for chemical vapor deposition
10/25/2007WO2007121157A2 Diffusing titanium and nitride into coated materials
10/25/2007WO2007120994A2 Methods and apparatus for selective pre-coating of a plasma processing chamber
10/25/2007WO2007119866A1 Film forming apparatus and film forming method
10/25/2007WO2007119700A1 Catalyst body chemical vapor phase growing apparatus
10/25/2007WO2007119612A1 Substrate treating apparatus and treating gas emitting mechanism
10/25/2007WO2007119077A2 Vacuum pumping system
10/25/2007WO2007118937A1 Method and apparatus for coating glass
10/25/2007WO2007118898A1 Device for introducing, injecting or spraying a mixture of a carrier gas and liquid compounds and method for implementing said device
10/25/2007US20070248794 Formation of high metallic content carbon nanotube structures
10/25/2007US20070248769 Cover film for organic electroluminescence devices, organic electroluminescence device using the cover film and process for producing the device
10/25/2007US20070248768 Coated Substrates and Methods for Their Preparation
10/25/2007US20070248767 Method of self-cleaning of carbon-based film
10/25/2007US20070248756 Opposed functional coatings having comparable single surface reflectances
10/25/2007US20070248755 Method of manufacturing optical fiber base material and apparatus therefor
10/25/2007US20070248754 Metal Complexes of Polydentate Beta-Ketoiminates
10/25/2007US20070248753 Vapor deposition of a layer
10/25/2007US20070248752 Method for making oxygen-reducing catalyst layers
10/25/2007US20070248751 Dynamic film thickness control system/method and its utilization
10/25/2007US20070248744 Method for the determination of process parameters in a thermal spraying process
10/25/2007US20070248515 System and Method for Forming Multi-Component Films
10/25/2007US20070246804 Organic insulating film, manufacturing method thereof, semiconductor device using such organic insulating film and manufacturing method thereof
10/25/2007US20070246355 Batch-Type Remote Plasma Processing Apparatus
10/25/2007US20070246163 Plasma reactor apparatus with independent capacitive and inductive plasma sources
10/25/2007US20070245963 Inductively Coupled Plasma Reactor with Multiple Magnetic Cores
10/25/2007US20070245962 Plasma Processing System and Method of Contolling the Same
10/25/2007US20070245961 Dual plasma source process using a variable frequency capacitively coupled source for controlling plasma ion dissociation
10/25/2007US20070245960 Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion density
10/25/2007US20070245959 Dual plasma source process using a variable frequency capacitively coupled source to control plasma ion density
10/25/2007US20070245958 Dual plasma source process using a variable frequency capacitively coupled source for controlling ion radial distribution
10/25/2007US20070245957 High density plasma oxidation
10/25/2007DE10248962B4 Verfahren zur Herstellung einer Hochtemperatur-Supraleiterschicht A process for producing a high-temperature superconductor layer
10/25/2007DE102006018515A1 CVD-Reaktor mit absenkbarer Prozesskammerdecke CVD reactor with retractable process chamber ceiling
10/25/2007DE102006018514A1 Vorrichtung und Verfahren zur Steuerung der Oberflächentemperatur eines Substrates in einer Prozesskammer Apparatus and method for controlling the surface temperature of a substrate in a process chamber
10/25/2007DE102006018491A1 Flexible plasmapolymere Produkte, entsprechende Artikel, Herstellverfahren und Verwendung Flexible plasma polymer products, corresponding products, manufacturing processes and use
10/25/2007DE102006013505B3 Mit SiBN beschichtete Substrate und Verfahren zu deren Herstellung sowie deren Verwendung SiBN coated substrates and processes for their preparation and their use
10/25/2007CA2649520A1 Plasma deposition apparatus and method for making solar cells
10/24/2007EP1847328A1 Photoresist coating process control with solvent vapor sensor
10/24/2007EP1846596A2 Method of making substitutionally carbon-highly doped crystalline si-layers by cvd
10/24/2007EP1846595A1 Selective deposition of silicon-containing films
10/24/2007EP1846591A1 Cemented carbide insert for wear resistance demanding short hole drilling operations
10/24/2007EP1846589A1 A method for coating an object
10/24/2007EP1846425A1 Processes for the production of organometallic compounds
10/24/2007EP1846322A1 Method of coating a surface with nanoparticles
10/24/2007EP1525137A4 Automatic refill system for ultra pure or contamination sensitive chemicals
10/24/2007EP1481117B1 Method and device for depositing semi-conductor layers
10/24/2007EP1268186A4 Chemical vapor deposition method and coatings produced therefrom
10/24/2007EP1190120A4 Compound gas injection system and methods
10/24/2007CN101061575A Film forming method, film forming apparatus
10/24/2007CN101061572A Processor
10/24/2007CN101061258A Barrier film forming internal electrode and film forming device
10/24/2007CN101061257A Method for vaporization of liquid raw material which enables low-temperature vaporization of liquid raw material, and vaporizer using the method
10/24/2007CN101061256A High-power dielectric seasoning for stable wafer-to-wafer thickness uniformity of dielectric CVD films
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