Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
02/2008
02/13/2008EP1885909A1 Nanostructure production methods and apparatus
02/13/2008EP1885908A1 Coating comprising layered structures of diamond like nanocomposite layers and diamond like carbon layers
02/13/2008EP1885907A2 Systems and methods for thermal management of electronic components
02/13/2008EP1885658A2 Method of making scratch resistant coated glass article including layer(s) resistant to fluoride-based etchant(s)
02/13/2008EP1252358A4 System and method for depositing inorganic/organic dielectric films
02/13/2008EP1138060B1 Gas driven rotating susceptor for rapid thermal processing (rtp) system
02/13/2008CN201021459Y Plasm processing room with coverage plate and gas allocation plate component
02/13/2008CN101124676A Supercritical fluid-assisted deposition of materials on semiconductor substrates
02/13/2008CN101124656A Shadow mask deposition of materials using reconfigurable shadow masks
02/13/2008CN101124353A Method and apparatus for growing a group (III) metal nitride film and a group (III) metal nitride film
02/13/2008CN101124352A Method for increasing deposition rates of metal layers from metal-carbonyl precursors
02/13/2008CN101124351A Deposition of polymeric materials and precursors therefor
02/13/2008CN101123201A Stage for plasma processing apparatus, and plasma processing apparatus
02/13/2008CN101123200A Stage for plasma processing apparatus, and plasma processing apparatus
02/13/2008CN101123174A Vacuum processing device, diagnostic method for static electricity chuck and storing medium
02/13/2008CN101122056A Silicon nitride coat ring and preparation method thereof
02/13/2008CN101122015A Method for preparing nano silicon-base porous luminescent material by normal pressure plasma gas phase deposition
02/13/2008CN101122014A Method for forming medium film with gradual changed components
02/13/2008CN101122013A Purge gas unit and purge gas supply integrated unit
02/13/2008CN101122012A Large-area pectinate spraying head used for metal organic chemical gas phase deposition device
02/13/2008CN101122011A Methods for low temperature deposition of an amorphous carbon layer
02/13/2008CN101122010A Precursors having open ligands for ruthenium containing films deposition
02/13/2008CN101121734A Organometallic compounds
02/13/2008CN101121733A Organometallic compounds
02/13/2008CN101121576A Method for manufacturing low radiation coated glass and coated solution used for the same
02/13/2008CN101121497A Carbon nano-tube composite material and preparation method thereof
02/13/2008CN101121108A Vacuum processing apparatus
02/13/2008CN100369230C Processing method and processing appts
02/13/2008CN100369217C Method for eliminating graphics effect in furnace tube operation
02/13/2008CN100369213C Plasma processing device and method thereof
02/13/2008CN100369202C Method for preparing nano-silicone base lighting composite film
02/13/2008CN100369201C Chemical meteorological depositer with high-density plasma
02/13/2008CN100369192C Semiconductor processing system reaction chamber
02/13/2008CN100368593C Annealing technique for eliminating titanium nitride film stress and decreasing film resistance
02/13/2008CN100368592C Large power heat gradient chemical gas phase infiltration process system monitoring device and method
02/13/2008CN100368591C Electronic absorbing disk for chemical gas-phase depositor
02/12/2008USRE40046 Processing system
02/12/2008US7329768 Chemical vapor deposition precursors for deposition of tantalum-based materials
02/12/2008US7329615 Atomic layer deposition method of forming an oxide comprising layer on a substrate
02/12/2008US7329612 Semiconductor device and process for producing the same
02/12/2008US7329609 Substrate processing method and substrate processing apparatus
02/12/2008US7329591 Method for forming silicon-containing film and method for decreasing number of particles
02/12/2008US7329590 Method for depositing nanolaminate thin films on sensitive surfaces
02/12/2008US7329436 A flow of a first material (Ti/Al/V alloy) is passed through a molten body of a second material (Zr/Mo alloy) and from the molten body to a substrate as a vapor flow; a non-expending portion of the molten body is an alloy having a melting point below the melting point of the first material
02/12/2008US7329328 Method for etch processing with end point detection thereof
02/12/2008US7329292 Process byproduct trap and system including same
02/12/2008CA2285125C Hard carbon film and surface-acoustic-wave substrate
02/07/2008WO2008016390A2 Catalyst for the growth of carbon single-walled nanotubes
02/07/2008WO2008016023A1 Gas supply device and board treatment apparatus
02/07/2008WO2008015914A1 Cvd film forming method and cvd film forming apparatus
02/07/2008WO2008015912A1 Substrate processing apparatus, program, recording medium and conditioning necessity determining method
02/07/2008WO2008015902A1 Method of manufacturing liquid crystal display device, and liquid crystal display device
02/07/2008WO2008015533A2 Porous dielectric layers obtained from pore -forming precursors
02/07/2008WO2008014915A2 Method for the plasma treatment of a surface
02/07/2008WO2007118006A3 Method of forming mixed rare earth nitride and aluminum nitride films by atomic layer deposition
02/07/2008WO2007112394A3 Method for purifying metal carbonyl precursors
02/07/2008WO2006101578A8 Vapor phase treatment of dielectric materials
02/07/2008US20080032880 Process For Manufacturing Wafer Of Silicon Carbide Single Crystal
02/07/2008US20080032514 Method For Manufacturing Semiconductor Device, And Substrate Processing Apparatus
02/07/2008US20080032511 Semiconductor Device Manufacturing Method and Plasma Oxidation Treatment Method
02/07/2008US20080032502 Safety features for semiconductor processing apparatus using pyrophoric precursor
02/07/2008US20080032157 Infrared reflecting layer system for transparent substrate
02/07/2008US20080032064 Selective sealing of porous dielectric materials
02/07/2008US20080032063 Plasma deposition apparatus and deposition method utilizing same
02/07/2008US20080032062 Organometallic compounds having sterically hindered amides
02/07/2008US20080032044 Process For Producing Zno Transparent Conductive Film By Mocvd (Metal-Organic Chemical Vapor Deposition) Method
02/07/2008US20080032043 Method and apparatus for processing the peripheral and edge portions of a wafer after performance of a surface treatment thereon
02/07/2008US20080032040 Wafer Support and Semiconductor Substrate Processing Method
02/07/2008US20080032036 Manufacturing apparatus for semiconductor device and manufacturing method for semiconductor device
02/07/2008US20080031698 Cutting Insert Provided With Structured Surfaces
02/07/2008US20080029484 In-situ process diagnostics of in-film aluminum during plasma deposition
02/07/2008US20080029032 Substrate support with protective layer for plasma resistance
02/07/2008US20080029031 Methods and apparatus for forming thin films for semiconductor devices
02/07/2008US20080029029 Transfer chamber for cluster system
02/07/2008US20080029028 Systems and methods for depositing material onto microfeature workpieces in reaction chambers
02/07/2008US20080029027 Plasma Cvd Device
02/07/2008DE19820147B4 Verfahren zur Bildung einer leitfähigen Schicht mittels eines atomaren Schichtdepositionsprozesses A method for forming a conductive layer by an atomic layer deposition process
02/07/2008DE102006036403A1 Verfahren und Vorrichtung zur Beschichtung eines Substrats mit einer definierten Schichtdickenverteilung Method and apparatus for coating a substrate with a defined layer thickness distribution
02/07/2008CA2658796A1 Method for the plasma treatment of a surface
02/06/2008EP1884987A1 Process for producing silicon compound
02/06/2008EP1884979A2 Self-passivating plasma resistant material for joining chamber components
02/06/2008EP1884576A2 Device for plasma coating of long, cylindrical components
02/06/2008EP1884518A1 Metal-imino complexes suitable for use as vapor deposition precursors
02/06/2008EP1884517A1 Organometallic compounds containing an alkenyl ligand and suitable for use as vapor deposition precursors
02/06/2008EP1884501A1 Method and formulation for depositing a metal-containing coating on a substrate
02/06/2008CN201016122Y Wafer surface illuvium growing device
02/06/2008CN101120124A Process for producing silicon carbide single crystal
02/06/2008CN101120122A Gas distribution showerhead featuring exhaust apertures
02/06/2008CN101120116A Method for the densification of thin porous substrates by means of vapour phase chemical infiltration and device for loading such substrates
02/06/2008CN101119859A System and method for increasing the emissivity of a material
02/06/2008CN101119807A Dense coating formation by reactive deposition
02/06/2008CN101119012A Method for fabrication of semiconductor device
02/06/2008CN101119011A Method for fabrication of semiconductor device
02/06/2008CN101118865A Substrate support with a protective layer for plasma resistance
02/06/2008CN101118841A Heat treatment device for semiconductor
02/06/2008CN101118007A High strength gear, power transmission mechanism using the same, and production method for high strength gear
02/06/2008CN101117707A Method for improving inner evenness of high-temperature deposition oxidation film
02/06/2008CN101117220A Method for the production of metal carbides
02/06/2008CN100367562C Thin film lithium ion cell using silver selenide film as anode material and its preparing method
02/06/2008CN100367472C Material for insulation film containing organic silane compound its producing method and semiconductor device