Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
03/2008
03/19/2008CN101147248A Plasma enhanced atomic layer deposition system and method
03/19/2008CN101147246A Method for manufacturing a semiconductor device with nitride and oxide layers
03/19/2008CN101147245A Substrate processing method and recording medium
03/19/2008CN101147236A Free-standing substrate, manufacturing method thereof and semiconductor light-emitting device
03/19/2008CN101146928A Coils utilized in vapor deposition applications and methods of production
03/19/2008CN101146927A Method and system for coating internal surfaces using reverse-flow cycling
03/19/2008CN101146398A Plasma processing device and electrode structure thereof
03/19/2008CN101145508A Plasma processing device and method
03/19/2008CN101145507A Plasma processing device
03/19/2008CN101145506A Load lock chamber for large area substrate processing system
03/19/2008CN101145498A Gas injection device
03/19/2008CN101144155A Microwave electron cyclotron resonance plasma chemistry gas phase sedimentation device
03/19/2008CN101144154A Plasma uniformity control by gas diffuser hole design
03/19/2008CN101144153A Substrate supporting device and thin film transistor array panel production method
03/19/2008CN101143873A Metal alkoxides compound, material for forming film and film manufacturing method
03/19/2008CN100376035C Semiconductor device and method for fabricating the same
03/18/2008US7344953 Process for vertically patterning substrates in semiconductor process technology by means of inconformal deposition
03/18/2008US7344927 Method and apparatus for manufacturing active matrix device including top gate type TFT
03/18/2008US7344909 Method for producing semi-conducting devices and devices obtained with this method
03/18/2008US7344755 Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers
03/18/2008US7344754 Introducing a reactive gas into a space near a surface of a substrate to be processed is such a way as to prevent substantial deposition of the metal film, and depositing the metal film on the surface of the substrate from a gaseous phase including a metal carbonyl compound
03/18/2008US7344753 Noncatalytically forming a nanowire on a substrate from an organometallic vapor without any type of reducing agent; use of Copper (ethylacetoacetate)trialkyl phosphite as copper precursor for example; integrated circuits
03/18/2008US7344597 Vapor-phase growth apparatus
03/18/2008US7344589 Solution/suspension of precursors of lead, zirconium and titanium, which do not undergo ligand exchange (2,2,6,6-tetramethyl-3,5-heptanedione complexes); vaporized including Ar, N2, H2, He, or NH3 as a carrier and O2, N2O, or O3 as an oxidizing reactant
03/18/2008US7344579 Pipe trap
03/13/2008WO2008031031A2 Cartesian cluster tool configuration for lithography type processes
03/13/2008WO2008030276A1 Low temperature method of making a zinc oxide coated article
03/13/2008WO2008029736A1 Method for separating surface layer or growth layer of diamond
03/13/2008WO2008029716A1 Film forming condition setting method, photoelectric converter, and manufacturing method, manufacturing apparatus and inspection method for the same
03/13/2008WO2008029622A1 Thin film forming apparatus and thin film forming method
03/13/2008WO2008029589A1 Method and equipment for producing group-iii nitride
03/13/2008WO2008029176A1 Method of pumping gas
03/13/2008WO2008013942A3 Methods and systems for manufacturing polycrystalline silicon and silicon-germanium solar cells
03/13/2008WO2008008319A3 Selective sealing of porous dielectric materials
03/13/2008WO2008008259A3 Apparatus and method for controlling plasma potential
03/13/2008WO2006136584A8 Method of forming a high dielectric constant film and method of forming a semiconductor device
03/13/2008US20080064227 Apparatus For Chemical Vapor Deposition and Method For Cleaning Injector Included in the Apparatus
03/13/2008US20080064225 Low dielectric constant film produced from silicon compounds comprising silicon-carbon bond
03/13/2008US20080064210 Systems and methods of forming refractory metal nitride layers using organic amines
03/13/2008US20080064192 Method for forming semiconductor device
03/13/2008US20080064147 Method for fabricating a metal-insulator-metal (mim) capacitor having capacitor dielectric layer formed by atomic layer deposition (ald)
03/13/2008US20080064136 Supercritical fluid-assisted deposition of materials on semiconductor substrates
03/13/2008US20080063895 Positioning substrate to be surface-treated in vaccum chamber containing electrode, introducing titanium precursor gas, air or oxygen, and volatile catalyst; improved plasma polymerization efficiency
03/13/2008US20080063810 In-situ process state monitoring of chamber
03/13/2008US20080063802 Conformal coatings for micro-optical elements
03/13/2008US20080063798 Precursors and hardware for cvd and ald
03/13/2008US20080063791 Film formation method and apparatus for semiconductor process
03/13/2008US20080063784 Glue dispensing process
03/13/2008US20080063576 stably generates jet at atmospheric pressure with low electric power; surface treatment, cutting, etching, film deposition; High-resolution microanalysis; High-resolution microanalysis with a "micro total analysis" using a VHF-driven inductively-coupled microplasma source
03/13/2008US20080061439 Low dielectric constant film produced from silicon compounds comprising silicon-carbon bond
03/13/2008US20080061438 Method of forming metal line in semiconductor device
03/13/2008US20080061235 Detecting Device Based on a Synthetic Diamond
03/13/2008US20080060933 Evacuating a space between a flat face of a magnetron electrode on a first side and a substrate support on a second, chemical vapor deposition where a magnetic field generated by the magnetron electrode causes darker tunnels, the surface to be treated is situated outside of the darker tunnels
03/13/2008US20080060581 Deposition of carbon-containing layers using vitreous carbon source
03/13/2008US20080060580 Batch-Type Remote Plasma Processing Apparatus
03/13/2008US20080060579 Apparatus of triple-electrode dielectric barrier discharge at atmospheric pressure
03/13/2008US20080060302 Breathable low-emissivity metalized sheets
03/13/2008DE102006040576A1 Verfahren zur Herstellung eines Dünnschicht-Thermogenerators A method for producing a thin-film thermal generator
03/13/2008CA2662594A1 Method and apparatus for producing a group iii nitride
03/12/2008EP1898469A1 Method for continuously depositing high resistance buffer layer/window layer (transparent conductive film) of cis based thin film solar cell and continuous film deposition equipment for carrying out that method
03/12/2008EP1898446A2 Substrate processing method, substrate processing apparatus, and program storage medium
03/12/2008EP1897970A1 Coated cutting tool and method for producing the same
03/12/2008EP1897936A1 Culture substrate with an oxidized silicon surface
03/12/2008EP1896629A1 Method for forming a dielectric film and novel precursors for implementing said method
03/12/2008EP1778890B1 Method for production of reactors for the decomposition of gases
03/12/2008EP1320124B1 Method of determining heat treatment conditions
03/12/2008EP1169490B1 Vacuum processing apparatus
03/12/2008CN101142670A A method for forming a ruthenium metal layer on a patterned substrate
03/12/2008CN101142663A Doped metal oxide films and systems for fabricating the same
03/12/2008CN101142221A Processes for the production of organometallic compounds
03/12/2008CN101140884A Film formation method and apparatus for semiconductor process
03/12/2008CN101140867A GaN thin film upgrowth method based on Al3O2 substrate
03/12/2008CN101139705A Method for making abrasion-resistant anti-corrosion highly-transparent coating film
03/12/2008CN101139704A Plasma chemical vapour deposition furnace
03/12/2008CN101139703A Method for cleaning chemical vapour deposition chamber
03/12/2008CN101139365A Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivatives
03/12/2008CN101139217A C/SiC composite material surface oxidation-resistant coating and method for making same
03/12/2008CN101139092A Method for preparing nanometer carbon tube on the aluminum foil
03/12/2008CN101138900A Coated cutting tool and method for producing the same
03/12/2008CN100375253C Metallorganics chemical vapour deposition (CVD) preparing method for p-type ZnO thin film
03/12/2008CN100375246C Plasma processing apparatus
03/12/2008CN100375227C Fluoration thermal active for semiconductor working chamber
03/12/2008CN100374765C Gas valve assembly and apparatus using the same
03/12/2008CN100374617C Chemical vapour phase deposition coating coating equipment
03/12/2008CN100374616C Plasma treating device with protective tube
03/12/2008CN100374389C Method for coating the quartz burner of an HID lamp
03/12/2008CN100374365C Method and apparatus for the preparation of high purity phosphine or other gas
03/11/2008US7341764 Gas for plasma reaction, process for producing the same, and use
03/11/2008US7341761 Methods for producing low-k CDO films
03/11/2008US7341648 Method for coating piston rings for internal combustion engine
03/11/2008US7341644 Method for predicting consumption of consumable part, method for predicting deposited-film thickness, and plasma processor
03/08/2008CA2559410A1 Method for forming a dielectric film on a substrate
03/06/2008WO2008028082A2 Precursors and hardware for cvd and ald
03/06/2008WO2008027956A2 Continuous dopant addition
03/06/2008WO2008027216A2 Processes and integrated systems for engineering a substrate surface for metal deposition
03/06/2008WO2008027215A2 Apparatus and method for integrated surface treatment and deposition for copper interconnect
03/06/2008WO2008027214A2 Methods and apparatus for barrier interface preparation of copper interconnect
03/06/2008WO2008027205A2 Self assembled monolayer for improving adhesion between copper and barrier layer
03/06/2008WO2008027197A1 Barium strontium titanium oxide films
03/06/2008WO2008027186A2 Integrated process for sputter deposition of a conductive barrier layer, especially an alloy of ruthenium and tantalum, underlying copper or copper alloy seed layer